200816279 九、發明說明： 本發明主張2006年7月26日申請之韓國專利申請案第ι〇· 2006-0070373號之權利，其以引用的方式併入本文中。 【發明所屬之技術領域】 本發明係關於一種用於製造半導體設備或平板顯示器之 裝置，且更明確地說，本發明係關於一種使用電漿來處理 例如晶圓或玻璃之基板的基板處理裝置。 【先前技術】 、一般而言，例如液晶顯示器或電漿顯示面板之平板顯示 器或半體e又備係精由基板上之薄膜沈積製程、光微影彭 程以及蝕刻製程來形成預定電路圖案而製造。每一製程均 在已設置最佳條件之基板處理裝置中執行。 近來，使用電漿之基板處理裝置已廣泛用於沈積或蝕刻 薄膜。 圖1為說明根據相關技術之使用電漿來沈積薄膜的電漿 增強化學氣相沈積（plasma enhanced chemical vapor deposition, PECVD)裝置之視圖。 圖1中，PECVD裝置l〇包含腔室11、基板支撐件12以及 電漿電極14。腔室11使腔室内之内力保持低於氣動力 (atmospheric force)。在腔室11之下壁處形成出口 18。 基板支撐件12設置於腔室11中，且基板S裝載於基板支 撐件12上。基板支撐件12充當下電極用以在腔室η中產生 電漿。基板支撐件12可藉由軸12a而上下移動，軸12a與基 板支擇件12之下表面的中心結合。 123120.doc 200816279 電漿電極14設置於基板支撐件12上方。射頻 frequency ’ RF)功率自RF功率源17施加至電漿電極w。電 漿電極！4可由鋁（A1)形成。阻抗匹配系統“連接於電漿^ 極14與RF功率源17之間。 氣體供應管線15連接至電漿電極14之中心，且氣體分配 板13與電漿電極14之下側耦合，使得在氣體分配板η與電 漿電極14之間界定氣體分配區。氣體供應管線^連接至氣 體分配區。氣體分配板13為包含複數個注入孔之銘塊，且 氣體分配板13之周邊固定在電漿電極14的下側。由於氣體 分配板13連接至電漿電極14且由與電漿電極14相同之材料 (例如，鋁）形成，所以氣體分配板13與電漿電極14具有相 同電位。因此，氣體分配板13實質上與電漿電極14一起充 §上電極用以產生電漿。在氣體分配板13與基板支撐件U 之間界定反應區。 電漿電極14之邊緣設置於電極支撐單元19上，電極支撐 單元19可能是自腔室n之側壁向腔室丨丨内部突出，或可能 是腔室11的側壁之上部分。由於腔室n接地，所以腔室n 應與施加有RF功率之電漿電極14及氣體分配板13分離。為 此，可將絕緣體插置於電極支撐單元19與電漿電極14之 、間。 另方面’由於電漿電極14及氣體分配板13的設置結構 而在氣體分配板1 3周圍形成間隙。該間隙被電極支撐單元 19之一側、氣體分配板丨3之一側以及電漿電極丨4所包圍。 该間隙連接至氣體分配板13與基板支撐件12之間的反應 123120.doc 200816279 區0 如上文所述，將RF功率施加至氣體分配板13及電裝電極 14，且電極支撐單元丨9連接至接地之腔室！丨的側壁或為側 壁的上部部分。因此，當將RF功率施加至電漿電極14時， 由於電壓差及/或間隙中的反應氣體而可能產生電弧或電 漿放電。電弧或電漿放電可能引起RF功率之損失及造成氣 體分配板13之損壞。此外，可能在間隙中或周圍沈積薄膜 且可能產生微粒。 、 為防止電弧或電漿放電，可將絕緣體20插入間隙中，如 圖1中所示。絕緣體2〇可由不傳導物質或具有相對較大電 阻率的材料形成，例如鐵氟龍（Tefl〇n)、陶瓷或其它工程 塑膠。絕緣體20越厚，絕緣效果越高。 然而，絕緣體20可能受腔室U中之金屬組件的熱膨脹的 影響。因此，對於絕緣體2〇之材料及設計存在諸多限制。 【發明内容】 因此，本發明針對一種防止不同電位表面之間的電弧或 電漿放電之基板處理裝置。 本發明之另一目的在於提供—種防止在不同電位表面之 間產生微粒之基板處理裝置。 本發明之另一目的在於提供一種防止裝置元件損壞的基 板處理裝置。 、、本發明之其它特徵及優點將在以下描述中闡釋，且自描 述中將部分地顯而易見，或可藉由實踐本發明來瞭解。將 藉由在書面描述及其申請專利範圍以及隨附圖式中特別指 123120.doc 200816279 出之結構來實現及獲得本發明之目的及其它優點。 為實現該等及其它優點且根據本發明之目的 並廣泛描述的，基板處理裝置包含： 體見 ^ , ，、昇有第一電 弟-琶極，其處於該腔室中且具有第二電位 -電極與腔室以間隙間隔開；第二電極，其在腔室； 一電極間隔開’其中反應區界定於第—電極與第極 間且連接至間隙；絕緣體，其設置於 t ^ ^ ^ 序、T其中絕緣體。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to an apparatus for manufacturing a semiconductor device or a flat panel display, and more particularly to a substrate processing apparatus for processing a substrate such as a wafer or glass using plasma. . [Prior Art] In general, a flat panel display or a half body e such as a liquid crystal display or a plasma display panel is formed by a thin film deposition process, a photolithography process, and an etching process on a substrate to form a predetermined circuit pattern. Manufacturing. Each process is performed in a substrate processing apparatus in which optimum conditions have been set. Recently, substrate processing apparatuses using plasma have been widely used for depositing or etching thin films. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a plasma enhanced chemical vapor deposition (PECVD) apparatus for depositing a thin film using plasma according to the related art. In Fig. 1, a PECVD apparatus 10 includes a chamber 11, a substrate support 12, and a plasma electrode 14. The chamber 11 maintains the internal force within the chamber below the atmospheric force. An outlet 18 is formed at the lower wall of the chamber 11. The substrate support 12 is disposed in the chamber 11, and the substrate S is loaded on the substrate support 12. The substrate support 12 serves as a lower electrode for generating plasma in the chamber η. The substrate support 12 is vertically movable by a shaft 12a which is coupled to the center of the lower surface of the substrate support member 12. 123120.doc 200816279 The plasma electrode 14 is disposed above the substrate support 12. The RF frequency 'RF' power is applied from the RF power source 17 to the plasma electrode w. Plasma electrode! 4 can be formed of aluminum (A1). The impedance matching system is "connected between the plasma electrode 14 and the RF power source 17. The gas supply line 15 is connected to the center of the plasma electrode 14, and the gas distribution plate 13 is coupled to the lower side of the plasma electrode 14, so that the gas is A gas distribution zone is defined between the distribution plate η and the plasma electrode 14. The gas supply line is connected to the gas distribution zone. The gas distribution plate 13 is an ingot containing a plurality of injection holes, and the periphery of the gas distribution plate 13 is fixed to the plasma electrode 14. The lower side of the gas distribution plate 13 is connected to the plasma electrode 14 and is formed of the same material (for example, aluminum) as the plasma electrode 14, so that the gas distribution plate 13 has the same potential as the plasma electrode 14. Therefore, gas distribution The plate 13 substantially fills the upper electrode together with the plasma electrode 14 for generating plasma. A reaction zone is defined between the gas distribution plate 13 and the substrate support U. The edge of the plasma electrode 14 is disposed on the electrode support unit 19, The electrode supporting unit 19 may protrude from the side wall of the chamber n toward the inside of the chamber, or may be a portion above the side wall of the chamber 11. Since the chamber n is grounded, the chamber n should be applied with RF power. The slurry electrode 14 and the gas distribution plate 13 are separated. For this purpose, the insulator can be interposed between the electrode supporting unit 19 and the plasma electrode 14. The other aspect is due to the arrangement of the plasma electrode 14 and the gas distribution plate 13. A gap is formed around the gas distribution plate 13. The gap is surrounded by one side of the electrode supporting unit 19, one side of the gas distribution plate 3, and the plasma electrode 4. The gap is connected to the gas distribution plate 13 and the substrate support 12 The reaction between 123120.doc 200816279 Zone 0 applies RF power to the gas distribution plate 13 and the electrical electrode 14 as described above, and the electrode support unit 丨9 is connected to the chamber of the ground! Upper portion. Therefore, when RF power is applied to the plasma electrode 14, an arc or plasma discharge may occur due to a voltage difference and/or a reactive gas in the gap. Arc or plasma discharge may cause loss of RF power and cause Damage to the gas distribution plate 13. In addition, a film may be deposited in or around the gap and particles may be generated. To prevent arcing or plasma discharge, the insulator 20 may be inserted into the gap, as shown in FIG. As shown, the insulator 2 can be formed of a non-conducting material or a material having a relatively large electrical resistivity, such as a Teflon, ceramic or other engineering plastic. The thicker the insulator 20, the higher the insulation effect. 20 may be affected by the thermal expansion of the metal components in the chamber U. Therefore, there are many limitations on the material and design of the insulator 2. Accordingly, the present invention is directed to preventing arcing or plasma between different potential surfaces. Discharge substrate processing apparatus Another object of the present invention is to provide a substrate processing apparatus for preventing generation of particles between different potential surfaces. Another object of the present invention is to provide a substrate processing apparatus for preventing damage of device elements. The other features and advantages of the invention will be set forth in part in the description in the description in the description. The objectives and other advantages of the invention will be realized and attained by the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; To achieve these and other advantages and in accordance with the purpose of the present invention and broadly described, a substrate processing apparatus includes: a body, a first electret-drain, which is in the chamber and has a second potential - the electrode and the chamber are spaced apart by a gap; the second electrode is in the chamber; an electrode is spaced apart 'where the reaction zone is defined between the first electrode and the first pole and is connected to the gap; and the insulator is disposed at t ^ ^ ^ Order, T where insulator
W口弟一方向彼此間隔開之第一部件及第二 緩衝絕緣體，其處於第一部件與第二部件之間。 在另一態樣中，基板處理裝置包含：腔室；兩個電 面，其處於腔室中，該等電位表面具有不同的電位且彼此 之間以間隙間隔開；絕緣體，其設置於間隙中 體包含彼此間隔開之第一部件及第— 、' 干汉弟一邛件，以及緩衝絕绫 體，其處於第一部件與第二部件之間。 應理解’前述—般描述及以下詳細描述均為例示性及解 釋性的且用以提供所主張之本發明的進一步解釋。 【實施方式】 現將詳細參照較佳例示性實施例，其實例在隨 說明。 本發明係為了使基板處理裝置中之不同電位的表面完全 絕緣，且並不限制氣體分配板及電漿電極之結構。更確切 地況’本發明係、為了使在基板處理裝置或腔室中的兩個具 有不同電位的構件或兩個電位表面絕緣。本發明並不限於 下文將要解釋之設置於氣體分配板與電極之間之絕緣構 123120.doc 200816279 件。 本發明之基板處理裝置可呈右盘 罝』具有與圖1的結構相類似之結 構。與相關技術相同的部件可具有相同參考符號，且可省 略對相同部件之解釋。 為了解決由於基板處理裝置中之金屬組件的熱膨服而引 •㈣題’可將絕緣體20分成若干個部件，且可在部件之 • Μ設置緩衝空間。尤其當絕緣體2G由鐵氣龍形成時，可能 '更加需要緩衝㈣，因為對於腔室^而言鐵氟龍之熱變形 大於鋁。 圖2A至圖2C為示意性說明根據本發明第一實施例之電 位表面的分離結構之視圖。 圖2A中，絕緣體20包含第一部件及第二部件，第一部件 及第二部件分別具有彼此平行之平坦表面。第一部件及第 二部件設置於氣體分配板13與電極支撐單元19之間，使得 平坦表面彼此之間以距離"d”間隔開並面向彼此。緩衝= 間3 0存在於絕緣體之第一部件與第二部件之間。 '此處，氣體分配板13經由緩衝空間3〇而面向電極支撐單 疋19。因此，在緩衝空間3〇中仍可能產生電弧或電漿放 電，從而引起絕緣體20劣化、氣體分配板13或其它元件損 壞、由於薄膜沈積而產生微粒等。 、 圖2Β中，絕緣體20包含第一部件及第二部件，第一部件 及第二部件在面向彼此之第一表面及第二表面處分別具有 突出部分20a及凹陷部分20b。突出部分2〇a及凹陷部分'2〇b 中之每一者可大體上形成於第一部件及第二部件的第一表 123120.doc 200816279 面及第二表面中之一者的中心處。將第一部件及第二部件 設置於氣體分配板13與電極支撐單元19之間，《中 熱知脹’第一表面與第二表面之間的距離為”。另外， 突出部分20a部分地插入凹陷部分鳥中，且突出部分、 之頂部與凹陷部分2〇b的底部間隔開。因Λ，緩衝空間3〇 不僅存在於第—部件及第二部件的第—表面與第二表面之 間’而且存在於突出部分2〇a與凹陷部分細之間。氣體分 配板13不可直接面向電極支撐單元19。 圖2C中，絕緣體2〇包含第一部件及第二部件，第—部件 及第二部件在面向彼此之第一表面與第二表面中的一側分 別具有突出部分21。第-部件及第二部件設置於氣體分配 與電極支樓單元19之間，其中第一部件及第二部件之 第一表面及第二表面中之一者與第一部件及第二部件中之 另一者的突出部分21之間的距離為”d，，，以使得突出部分 彼此乂替。緩衝空間3 〇存在於第一部件及第二部件中之 一者的相向表面與第一部件及第二部件中之另一者的突出 P刀1之間，且氣體分配板13不直接面向電極支撑單元 19 〇 與圖2A之結構相比，圖2B及圖2C的結構減少了放電之 產生。然而，由於緩衝空間30而仍然存在放電之可能性。 更確切而言，在氣體分配板13與電極支撐單元19之間存在 電位差，且緩衝空間3〇中之一者暴露於腔室丨丨之反應區。 因此，流入緩衝空間30内的反應氣體由於電位差而放電， 且祐#產生不合需要之電漿。如上文所提及，緩衝空間3 〇 123120.doc 200816279 中士的電漿引起絕緣體2G劣化、氣體分配板i3或其它元件損 壞、由於薄膜沈積而產生微粒等。 ，發明之例示性實施例具有以下特徵，在絕緣體㈣兩 個部件之間的間隙或处鬥由 次二間中插入可收縮的緩衝絕緣體40， 如圖3中所說明。 圖3為示意性說明根據本發明第二實施例之電位表面的 分離結構之視圖，且圖4 & Μ卩Η h Μ ^ θ 4為次明根據本發明第二實施例的 ( 緩衝絕緣體之視圖。 在圖3及圖4中，絕緣體2〇包含第—部件及第二部件，且 緩衝絕緣體4G設置於絕緣體2Q之第—部件與第二部件之 間。 =心言，絕緣體2G之第—部件及第二部件在面向彼 一 面及第二表面的—側分別具有突出部分21。第 ^及ί —部件設置於氣體分配板13與電極支撐板19之 二 '中第一部件及第二部件之第-表面及第二表面中之 ^ 一部件及第二部件中之另一者的突出部分21之間 ，疋距離’以使得突出部分川皮此交替。緩衝空間存 =弟—部件及第二部件之第—表面及第二表面中的-者 件及第二部件中之另一者的突出部扣之間。緩 衝、、、巴緣體40設置於緩衝空間中。 ^體20及緩衝絕緣體4〇使得與腔室】！具有相同電位之 /立表面跟與氣體分配板13及電漿電極14具有相同 位之弟二電位表面分離。 緩衝絕緣體4〇可具有由於外力而能收縮之各種形狀。舉 I23120.doc 200816279 例而言，如圖4中所示，緩衝絕緣體4〇可包含水平部分42 及垂直部分44，水平部分42及垂直部分44具有不同方向且 交替地連接至彼此。緩衝絕緣體40之形狀並不限於此形 狀。 緩衝絕緣體40可由彈性絕緣材料形成，且可有利地由與 絕緣體20相同的材料形成。舉例而言，緩衝絕緣體可由 工程塑膠形成，例如鐵氟龍，即聚四氟乙烯 (polytetrafluoroethylene，PTFE)。 絕緣體20之第一部件與第二部件之間的緩衝空間内反應 氣體之注入可藉由將緩衝絕緣體4〇插入緩衝空間中而減 少，且在緩衝空間中可減少電漿放電。此外，在緩衝空間 中可防止沈積不合需要之薄膜。因此，無法產生微粒，且 可防止例如腔室11之絕緣體2〇或其它元件劣化或損壞的問 題。 如上文所述，緩衝絕緣體40可由於外力而收縮。圖5為 〇 不意性說明當存在外力時根據本發明第二實施例之電位表 面的分離結構之視圖。 如圖5中所不，當處理基板（未圖示）時，絕緣體可由 於熱而膨脹，且絕緣體20之第一部件與第二部件之間的緩 衝空間可逐漸變窄。此時’緩衝絕緣體40可由於來自膨脹 之絕緣體20的力而收縮，且可吸收膨脹力。 此外，電位表面之分離結構可不同於圖3之分離結構。 圖6及圖7為說明根據本發明第二實施例之電位表面的其它 分離結構之視圖。 123120.doc 12· 200816279 圖6中’絕緣體20包含第一部件及 ^二部件在面向彼此之第―表面及第^ 部件 突出部分20a及凹陷部分2〇b。突 、处分別具有 中之每一者可大體上形成 刀2〇a及凹陷部分20b 面及第二表面中的-者=!二部件之第-表 第-部件及第-部件-1於〃 乂使传其彼此對應。將 牛及弟-秦置於氣體分配板13與電極 :…考慮到熱膨脹’第-表面與第二表面之：有 '預疋距離。因此，三個緩衝空間存在於第 部件之第一表面與第二表面之間及突出部分心陷; 刀2〇b之間。緩衝絕緣體4〇分別設置於緩衝空間中。 突出部分20a可部分地插入於凹陷部分_中，且突出部 分20a的頂部可與凹陷部分2〇b之底部間隔開。 。 圖7中，絕緣體20包含第一部件及第二部件，第—部件 及第二部件分別具有彼此平行之平坦表面。第―部件及第 一部件設置於氣體分配板13與電極支撐單元19之間，以使 得平坦表面彼此之間以預定距離間隔開且面向彼此。緩衝 空間存在於絕緣體20之第一部件與第二部件之間。緩衝絕 緣體40設置於緩衝空間中。 根據本發明，由於緩衝絕緣體設置於絕緣體的部件之間 的緩衝空間中，而該絕緣體安置於具有不同電位之電極支 撐單凡與氣體分配板之間，所以防止了反應氣體進入緩衝 空間内，且在緩衝空間中可防止電漿放電。另外，在緩衝 空間中沒有薄膜沈積，且因此不產生微粒。此外，可防止 腔室之絕緣體或元件損壞及劣化。 123120.doc •13- 200816279 ，習此項技術者將顯而μ，可在殘離本發明之精神 或範嘴之情況下，在裝置中進行各種修改及變化。因此， 希望本發明涵蓋在隨附中請專利範圍及其等效物範嘴内之 本發明的修改及變化。 【圖式簡單說明】 圖1為說明根據相關技術之使用電漿來沈積薄膜的電漿 增強化學氣相沈積裝置之視圖； 圖2Α至圖2C為示意性說明根據本發明第一實施例之電 位表面的分離結構之視圖； 圖3為示意性說明根據本發明第二實施例之電位表面的 分離結構之視圖； 圖4為說明根據本發明第二實施例之緩衝絕緣體之視 圖； 圖5為不意性說明當存在外力時根據本發明第二實施例 之電位表面的分離結構之視圖； 圖6為說明根據本發明第二實施例之電位表面的另一分 離結構之視圖；及 圖7為說明根據本發明第二實施例之電位表面的另一分 離結構之視圖。 【主要元件符號說明】 10 PECVD裝置 11 腔室 12 基板支撑件 12a 軸 123120.doc •14- 200816279 13 氣體分配板 14 電漿電極 15 氣體供應管線 16 阻抗匹配系統 17 RF功率源 18 出口 19 電極支撐單元 20 絕緣體 20a 突出部分 20b 凹陷部分 21 突出部分 30 緩衝空間 40 緩衝絕緣體 42 水平部分 44 垂直部分 d 距離 S 基板 123120.doc -15-The first member and the second buffer insulator, which are spaced apart from each other, are in a direction between the first member and the second member. In another aspect, a substrate processing apparatus includes: a chamber; two electrical faces in the chamber, the equipotential surfaces having different potentials and spaced apart from each other by an gap; and an insulator disposed in the gap The body includes a first component spaced apart from each other and a first, a 'dry' piece, and a buffered insulator, between the first component and the second component. It is to be understood that the foregoing descriptions [Embodiment] Reference will now be made in detail to the preferred exemplary embodiments, The present invention is intended to completely insulate the surfaces of different potentials in the substrate processing apparatus, and does not limit the structure of the gas distribution plate and the plasma electrode. More specifically, the present invention is for insulating two members having two different potentials or two potential surfaces in a substrate processing apparatus or chamber. The invention is not limited to the insulating structure 123120.doc 200816279 disposed between the gas distribution plate and the electrode as will be explained hereinafter. The substrate processing apparatus of the present invention can be in the form of a right disk having a structure similar to that of Fig. 1. The same components as those of the related art may have the same reference symbols, and the explanation of the same components may be omitted. In order to solve the problem of thermal expansion of the metal component in the substrate processing apparatus, the insulator 20 can be divided into a plurality of components, and a buffer space can be provided in the component. Especially when the insulator 2G is formed of an iron gas dragon, it may be more necessary to buffer (4) because the thermal deformation of the Teflon is larger than that of the aluminum for the chamber. 2A to 2C are views schematically illustrating a separation structure of a potential surface according to a first embodiment of the present invention. In Fig. 2A, the insulator 20 includes a first member and a second member, the first member and the second member each having a flat surface parallel to each other. The first member and the second member are disposed between the gas distribution plate 13 and the electrode supporting unit 19 such that the flat surfaces are spaced apart from each other by a distance "d" and face each other. Buffer = between 30 and 10 in the insulator Between the component and the second component. Here, the gas distribution plate 13 faces the electrode support unit 19 via the buffer space 3〇. Therefore, arcing or plasma discharge may still occur in the buffer space 3〇, thereby causing the insulator 20 Deterioration, damage to the gas distribution plate 13 or other components, generation of particles due to film deposition, etc. In Fig. 2, the insulator 20 includes a first member and a second member, the first member and the second member being on the first surface facing each other and The second surface has a protruding portion 20a and a recessed portion 20b, respectively. Each of the protruding portion 2〇a and the recessed portion '2〇b may be formed substantially in the first table of the first component and the second component 123120.doc 200816279 The center of one of the face and the second surface. The first component and the second component are disposed between the gas distribution plate 13 and the electrode support unit 19, and the first surface and the second surface are The distance between the surfaces is ". In addition, the protruding portion 20a is partially inserted into the concave portion bird, and the top portion of the protruding portion is spaced apart from the bottom portion of the concave portion 2〇b. Because of this, the buffer space 3〇 exists not only between the first surface and the second surface of the first member and the second member but also between the protruding portion 2〇a and the depressed portion. The gas distribution plate 13 is not directly facing the electrode supporting unit 19. In Fig. 2C, the insulator 2 includes a first member and a second member, and the first member and the second member have protruding portions 21 on one of the first surface and the second surface facing each other, respectively. The first component and the second component are disposed between the gas distribution and the electrode branch unit 19, wherein one of the first surface and the second surface of the first component and the second component is combined with the first component and the second component The distance between the protruding portions 21 of the other is "d," such that the protruding portions are replaced with each other. The buffer space 3 is present in the opposing surface of the first member and the second member and the first member and The other of the second members protrudes between the P-knife 1 and the gas distribution plate 13 does not directly face the electrode support unit 19. The structure of FIGS. 2B and 2C reduces the generation of discharge as compared with the structure of FIG. 2A. However, there is still a possibility of discharge due to the buffer space 30. More specifically, there is a potential difference between the gas distribution plate 13 and the electrode supporting unit 19, and one of the buffer spaces 3〇 is exposed to the chamber Therefore, the reaction gas flowing into the buffer space 30 is discharged due to the potential difference, and the undesirable plasma is generated. As mentioned above, the buffer space 3 〇123120.doc 200816279 Sergeant's plasma causes the insulator 2G inferior The gas distribution plate i3 or other components are damaged, particles are generated due to film deposition, etc. The exemplary embodiment of the invention has the following features: a gap or a bucket between two components of the insulator (4) can be inserted from the second chamber Shrinking buffer insulator 40, as illustrated in Fig. 3. Fig. 3 is a view schematically showing a separation structure of a potential surface according to a second embodiment of the present invention, and Fig. 4 & Μ卩Η h Μ ^ θ 4 A view of a buffer insulator according to a second embodiment of the present invention. In FIGS. 3 and 4, the insulator 2 includes a first member and a second member, and the buffer insulator 4G is disposed on the first member and the second member of the insulator 2Q. Between the components, the first component of the insulator 2G has a protruding portion 21 on the side facing the other side and the second surface. The components are disposed on the gas distribution plate 13 and the electrode support. Between the first surface of the first member and the second member and the protruding portion 21 of the other of the second member and the second member, the distance ' is such that the protruding portion is Peel this The buffer space is between the first surface of the component and the second component and the protrusion of the other of the second component and the second component. The buffer, and the body 40 are disposed. In the buffer space, the body 20 and the buffer insulator 4 are separated from the chamber by the same potential/standing surface as the gas distribution plate 13 and the plasma electrode 14. The buffer insulator 4 is separated. The crucible may have various shapes that can be shrunk due to an external force. As shown in FIG. 4, as shown in FIG. 4, the buffer insulator 4 may include a horizontal portion 42 and a vertical portion 44, and the horizontal portion 42 and the vertical portion 44 have Connected to each other in different directions and alternately. The shape of the buffer insulator 40 is not limited to this shape. The buffer insulator 40 may be formed of an elastic insulating material and may be advantageously formed of the same material as the insulator 20. For example, the buffer insulator can be formed from an engineering plastic such as Teflon, or polytetrafluoroethylene (PTFE). The injection of the reactive gas in the buffer space between the first member and the second member of the insulator 20 can be reduced by inserting the buffer insulator 4 into the buffer space, and the plasma discharge can be reduced in the buffer space. In addition, the deposition of undesirable films can be prevented in the buffer space. Therefore, particles cannot be generated, and problems such as deterioration or damage of the insulator 2 or other elements of the chamber 11 can be prevented. As described above, the buffer insulator 40 can be contracted due to an external force. Fig. 5 is a view showing a separation structure of a potential surface according to a second embodiment of the present invention when an external force is present. As shown in Fig. 5, when a substrate (not shown) is processed, the insulator can be expanded by heat, and the buffer space between the first member and the second member of the insulator 20 can be gradually narrowed. At this time, the buffer insulator 40 can be contracted due to the force from the expanded insulator 20, and can absorb the expansion force. Further, the separation structure of the potential surface may be different from the separation structure of FIG. 6 and 7 are views for explaining other separation structures of the potential surface according to the second embodiment of the present invention. 123120.doc 12· 200816279 In Fig. 6, the 'insulator 20' includes a first member and a second member facing the first surface and the second member protruding portion 20a and the recessed portion 2b. Each of the protrusions and the respective portions may substantially form a surface of the blade 2〇a and the recessed portion 20b and a second surface of the second surface of the second component and the first component Let them pass each other. Place the cow and brother-Qin on the gas distribution plate 13 and the electrode: ... Considering the thermal expansion 'the first surface and the second surface: there is a 'pre-twist distance. Therefore, three buffer spaces exist between the first surface and the second surface of the first member and the protruding portion is indented; between the blades 2〇b. The buffer insulators 4 are respectively disposed in the buffer space. The protruding portion 20a may be partially inserted into the recessed portion_, and the top of the protruding portion 20a may be spaced apart from the bottom of the recessed portion 2'b. . In Fig. 7, the insulator 20 includes a first member and a second member, and the first member and the second member respectively have flat surfaces parallel to each other. The first member and the first member are disposed between the gas distribution plate 13 and the electrode supporting unit 19 such that the flat surfaces are spaced apart from each other by a predetermined distance and face each other. The buffer space is present between the first component and the second component of the insulator 20. The buffer insulator 40 is disposed in the buffer space. According to the present invention, since the buffer insulator is disposed in the buffer space between the members of the insulator, and the insulator is disposed between the electrode support having a different potential and the gas distribution plate, the reaction gas is prevented from entering the buffer space, and Plasma discharge is prevented in the buffer space. In addition, there is no film deposition in the buffer space, and thus no particles are generated. In addition, damage or deterioration of the insulation or components of the chamber can be prevented. A person skilled in the art will be able to make various modifications and changes in the device without departing from the spirit or scope of the invention. Therefore, it is intended that the present invention cover the modifications and variations of the invention BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view illustrating a plasma enhanced chemical vapor deposition apparatus for depositing a thin film using plasma according to the related art; FIGS. 2A to 2C are diagrams schematically illustrating a potential according to a first embodiment of the present invention. 3 is a view schematically showing a separation structure of a potential surface according to a second embodiment of the present invention; FIG. 4 is a view illustrating a buffer insulator according to a second embodiment of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 6 is a view illustrating another separation structure of a potential surface according to a second embodiment of the present invention; and FIG. 7 is a view illustrating a separation structure of a potential surface according to a second embodiment of the present invention; A view of another separate structure of the potential surface of the second embodiment of the present invention. [Main component symbol description] 10 PECVD device 11 chamber 12 substrate support 12a shaft 123120.doc • 14- 200816279 13 gas distribution plate 14 plasma electrode 15 gas supply line 16 impedance matching system 17 RF power source 18 outlet 19 electrode support Unit 20 Insulator 20a Projection Portion 20b Recessed Portion 21 Projection Portion 30 Buffer Space 40 Buffer Insulator 42 Horizontal Section 44 Vertical Section d Distance S Substrate 123120.doc -15-