TW200815629A - Silica glass crucible with barium-doped inner wall - Google Patents
Silica glass crucible with barium-doped inner wall Download PDFInfo
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- TW200815629A TW200815629A TW096130132A TW96130132A TW200815629A TW 200815629 A TW200815629 A TW 200815629A TW 096130132 A TW096130132 A TW 096130132A TW 96130132 A TW96130132 A TW 96130132A TW 200815629 A TW200815629 A TW 200815629A
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- layer
- doped
- grain
- mold
- cerium
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 239000013078 crystal Substances 0.000 claims description 49
- 238000002844 melting Methods 0.000 claims description 26
- 230000008018 melting Effects 0.000 claims description 24
- 239000000155 melt Substances 0.000 claims description 23
- 239000011521 glass Substances 0.000 claims description 22
- 229910052732 germanium Inorganic materials 0.000 claims description 17
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 17
- 229910052684 Cerium Inorganic materials 0.000 claims description 14
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 14
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 12
- 229910052707 ruthenium Inorganic materials 0.000 claims description 12
- 239000004575 stone Substances 0.000 claims description 9
- 238000005245 sintering Methods 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- 238000012360 testing method Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- 239000008187 granular material Substances 0.000 claims description 5
- 229910052691 Erbium Inorganic materials 0.000 claims description 4
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 4
- 238000003723 Smelting Methods 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 238000005086 pumping Methods 0.000 claims 2
- 229910021647 smectite Inorganic materials 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 8
- 229910052787 antimony Inorganic materials 0.000 abstract description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 238000002231 Czochralski process Methods 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000005350 fused silica glass Substances 0.000 abstract 1
- 230000004927 fusion Effects 0.000 abstract 1
- 238000007499 fusion processing Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 31
- 230000008859 change Effects 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000004031 devitrification Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000007670 refining Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000013022 venting Methods 0.000 description 2
- 241001674044 Blattodea Species 0.000 description 1
- 244000025254 Cannabis sativa Species 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003258 bubble free glass Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 206010020718 hyperplasia Diseases 0.000 description 1
- 230000002390 hyperplastic effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 230000004660 morphological change Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000004901 spalling Methods 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- -1 sulphur compound Chemical class 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000010455 vermiculite Substances 0.000 description 1
- 229910052902 vermiculite Inorganic materials 0.000 description 1
- 235000019354 vermiculite Nutrition 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B21/00—Unidirectional solidification of eutectic materials
- C30B21/06—Unidirectional solidification of eutectic materials by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Melting And Manufacturing (AREA)
Abstract
Description
200815629 九、發明說明: 【明所肩】 本申請案係2〇〇5年9月8日所提申之”具有無氣泡及較 ^ 少氣泡生長壁的矽玻璃坩堝”之美國專利申請案第 5 11/223,158號的一個部分延續案,茲將其在此列入通盤參 、 考。 1.發明領域 φ 本發明係有關矽坩堝之領域,尤其是有關具有含鋇摻 雜内層之多層壁的一個矽坩堝。 10 【先前技術】 2.發明背景200815629 IX. Inventor's Note: [Ming's shoulder] This application is based on the US Patent Application No. which was filed on September 8, 2, 5, and has a bubble-free and less bubble growth wall. 5 Part of the continuation of 11/223, 158, which is hereby included in the overall reference. 1. Field of the Invention φ This invention relates to the field of ruthenium, and more particularly to a ruthenium having a multi-walled wall containing a ruthenium-doped inner layer. 10 [Prior Art] 2. Background of the Invention
CzochralskKCZ)法於單晶矽之晶棒生產技術中廣為所 知,矽晶圓即由晶棒製成,而用於半導體業中。The Czochralsk KCZ) method is well known in the art of crystal rod production of single crystal crucibles, which are made of ingots and used in the semiconductor industry.
於CZ法中,乃將金屬石夕裝入位於容器内部的一個石夕 玻璃坩堝中,接著利用-個環繞此容器之加熱器將此填充 物加熱贿化賴填之扣,由⑽或接妙贿化溫度 時所熔化之石夕石拉出一個單晶石夕。 、&法、例如大量摻雜且用以製作晶棒供太陽能電 池使用者’贿化物與_之間具有非常高的 高的反應性,當拉出—奸曰& 飞非甲 出根曰曰棒以切割出太陽能電池晶圓 時,需要相當高的效率,μ _ 爲要極南熱量才能在初始階段 快速熔化錢長作業時間 高时禍之❹壽命。 -狐之了必須提 5 20 200815629 於作業溫度下,矽坩堝的内表面常會和矽熔化物起反 應。在許多案例中,坩堝内表面歷經形態改變,可看出坩 堝内表面於延長之cz作業期間變粗糙。 此粗糙結果可能導致失去拉出晶棒的結晶構造,内表 面k粗糙會使坩堝無法用於矽晶棒製作。當坩堝内表面的 主要部分被一粗糙表面覆蓋時,位於結晶_熔融界面處的妗 晶構造會破裂,這種變粗糙的坩堝不適用於晶棒製作,: 必須停止使用變粗糙的坩堝進行矽晶拉製,以免製出未達 標準之晶棒。 10 15 20 另外在CZ法期間,石夕玻璃掛禍的内表面可能部分地溶 解於石夕炼化物中,料_主要成分秒及氧對卿化物並 無害’然而,㈣内層中的雜質可能在製程中轉移至石夕炼 化物中,所拉出的單晶品質可能被破壞,端視污染範圍及 污染物性質而定。 -個致力於控制内表面形態之成果在於内表面上塗覆 了含鋇化學製品的一個坩堝,其可增進坩堝内表面上之失 透效果。此係從非晶矽轉變成晶矽之相變化,失透作用可 防止在矽-熔化物界面處產生微粒,於一 02程序中所形成的 失透層包含了 -層結晶碎層,且報告指出可均句地溶解, 並維持平滑的一個坩堝内表面。 若所形成之結晶層太厚,則相變化所造成的體積改變 會導致此層破裂,而使熔化物穿過結晶與非晶層之間,最 終可能導致破裂層剝落。 9 9 此外,位於摻雜層下方之未摻雜㈣壁中的氣泡雜 6 200815629 會釋出氣體,可能導致掺雜層於其内表面上形成凹孔,即 使内表面並未因失軸間膨脹而破裂。 【發明内容】 5 依據In the CZ method, the metal stone is placed in a stone enamel glass jar inside the container, and then the filler is heated and bristled by a heater surrounding the container, and the (10) or the wonderful The stone stone that melted when the temperature was bribed pulled out a single crystal stone. , & method, for example, a large amount of doping and used to make ingots for solar cell users to have a very high degree of reactivity between the bribes and _, when pulled out - 曰 曰 & 飞 非 非 飞 曰When the pry bar is used to cut out the solar cell wafer, it requires a relatively high efficiency, and μ _ is required to be extremely south heat in order to quickly melt the money in the initial stage and the operation time is high. - The fox must mention 5 20 200815629 At the working temperature, the inner surface of the crucible often reacts with the crucible melt. In many cases, the inner surface of the crucible has undergone a morphological change, and it can be seen that the inner surface of the crucible becomes rough during extended cz operations. This rough result may result in the loss of the crystal structure of the pull-out ingot, and the roughness of the inner surface k may make the crucible unusable for the production of the twin rod. When the main part of the inner surface of the crucible is covered by a rough surface, the twin structure at the crystallization-melting interface is broken. This roughened crucible is not suitable for the production of the ingot, and the crucible must be stopped. Crystallized to avoid the production of under-standard rods. 10 15 20 In addition, during the CZ method, the inner surface of the Shixi glass smash may be partially dissolved in the shixi refining compound. The material _ main component seconds and oxygen are not harmful to the sulphur compound. However, (4) the impurities in the inner layer may be During the process, it is transferred to the Shixi refining compound, and the quality of the single crystal pulled out may be destroyed, depending on the pollution range and the nature of the contaminant. The result of an effort to control the shape of the inner surface consists in the coating of a crucible containing an antimony chemical on the inner surface which enhances the devitrification effect on the inner surface of the crucible. This is a phase change from amorphous yttrium to crystal yttrium, which prevents the generation of particles at the yttrium-melt interface. The devitrified layer formed in the 02 process contains a layer of crystalline lamella, and reports It is indicated that it can be dissolved uniformly and maintain a smooth inner surface of the crucible. If the crystal layer formed is too thick, the volume change caused by the phase change causes the layer to rupture, and the melt passes between the crystallized layer and the amorphous layer, which may eventually cause the rupture layer to peel off. 9 9 Furthermore, the bubble 6 6 in the undoped (four) wall below the doped layer will release gas, which may cause the doped layer to form a recess on its inner surface even if the inner surface is not expanded due to loss of axis. And ruptured. [Summary of the Invention] 5 basis
10 1510 15
一 實施例,係特地提出一種用於製作一 、=S夕坩堝之方法,其包括有··將塊狀矽晶粒沿著一旋轉 拉的個内表面饋人’以將塊狀石夕晶粒配置成徑向内表面 朝向轉模内部空間、而徑向外表面緊鄰著鑄模内部的一個 ^瑪形狀,從該鑄模内部空間加熱該塊財晶粒;將氣體 :已加=之晶粒中排出;於該徑向内表面處開始形成一個 ^化物w部’並朝該徑向外表面行進;維持贿化物前部 ^鑄模㈣之間的—個壓力差,而以高於將其饋入之 =度將氣體抽離該溶化物前部,直到該以粒形成一層 I 、 A屋之透明玻璃層;其後將該熔化物前部與該 :模内壁之間的壓力差降至該氣體以低於其被注入之速 ς抽離該炼化物前部的—個速度;將鋇摻_晶粒饋入 =透明_層上面;以及將該鋇摻雜⑪晶㈣合於該透 明破璃層上面。 依據本發明之一實施例,係特地提出-種用於製作一 2二融錢瑪之方法,其包括有:於-旋轉㈣莫的内表面 古形,一層塊狀晶粒㉟,該塊狀晶粒層具有一個底部、一 部:以及—個塊狀晶粒層内表面;於該鑄模内部形成 、“、、區,至少部分地熔化該塊狀晶粒層以形成一厚層; =及將-層平均深度小於⑽麵之含鋇内層沈積於該塊狀 日日粒層内表面上。 7 200815629 依據本發明之-實施例,係特地提出一種石英掛禍, 其包括有·-層内層,其厚度大於2〇匪且於橫截面區域 中含有少於大約1%之氣泡,其中當以接近“刈度匚之溫 度、於接近0·1 Pa的壓力下將坩堝加熱大約三小時之真空燒 -5結試驗後,該内層中的氣泡直徑小於大約〇·3 mm •,一層外 : 層,其視密度經過真空燒結試驗之後乃大於或等於大約 2.05 g/cm3·,一個坩堝壁,其至少包括内層及外層,該壁經 過真空燒結試驗之後所增加的厚度小於或等於大約3% ;以 鲁 及一層在内層上面所形成的鋇摻雜層。 10 圖式簡單說明 第1圖乃其内形成了一個坩堝之鑄模橫截面概略圖解 侧視圖。 弟1A圖為弟1圖之掛竭核的一條氣道之放大橫截面 侧視圖。 15 第2圖為第1圖之坩堝壁的一個放大圖。 第3及4圖為用於以第1圖之鱗模製作矽玻璃坩堝的方 ® 法之圖解說明。 v 第5圖為第一種習知技藝坩堝於C Z法中使用之後的一 個截面透視圖。 20 第6圖為第5圖之坩堝的部分放大圖。 第7圖為沿第6圖之線段7-7所取的一個橫截面圖。 第8圖第二種習知技藝坩堝於CZ法中使用之後的一個 截面透視圖 第9圖為根據本發明而完成之坩堝於CZ法中使用之後 8 200815629 的一個截面透視圖。 【實施方式】 較佳實施例之詳細說明 本發明一方面提供了一種矽玻璃坩渦,其包含一層有 5助於失透效果之最内鋇摻雜層,以及一層厚度足以延長作 業時間且無氣泡及氣泡生長的中間層,該坩堝更包含一層 於重複拉晶棒期間幾乎不會膨脹的穩定外層。In one embodiment, a method for fabricating a singular slab is specifically proposed, which comprises: feeding a lumpy ruthenium grain along a rotating inner surface to form a block slab The grain is configured such that the radially inner surface faces the inner space of the mold, and the radially outer surface is adjacent to a shape of the inside of the mold, and the grain is heated from the inner space of the mold; Discharging; forming a chemical portion w at the radially inner surface and proceeding toward the radially outer surface; maintaining a pressure difference between the front part of the bribe (the mold) and feeding it higher than The degree of gas is drawn away from the front of the melt until the granules form a layer of transparent glass of the I, A house; thereafter the pressure difference between the front of the melt and the inner wall of the mold is reduced to the gas Feeding at a speed lower than the speed at which it is injected, the ruthenium-doped grain is fed onto the transparent layer; and the yttrium-doped 11-crystal (four) is bonded to the transparent glass Above the layer. According to an embodiment of the present invention, there is specifically proposed a method for fabricating a 1-2 merging horse, comprising: an inner surface of an inner-rotating (four) mo, a layer of crystal grains 35, the block The seed layer has a bottom portion, a portion: and an inner surface of the bulk crystal grain layer; and a "," region is formed inside the mold to at least partially melt the bulk crystal grain layer to form a thick layer; An inner layer containing an inner layer having an average depth of less than (10) is deposited on the inner surface of the bulk day layer. 7 200815629 In accordance with an embodiment of the present invention, a quartz hazard is specifically proposed, which includes an inner layer , having a thickness greater than 2 〇匪 and containing less than about 1% of the bubbles in the cross-sectional area, wherein the crucible is heated for about three hours at a pressure close to "the temperature of the crucible" at a pressure close to 0.1 Pa. After the burn-knot junction test, the diameter of the bubbles in the inner layer is less than about 〇·3 mm •, one layer outside: the layer, the apparent density after the vacuum sintering test is greater than or equal to about 2.05 g/cm 3 ·, a wall, At least including an inner layer and an outer layer, the wall is vacuum-fired The thickness increased after the junction test is less than or equal to about 3%; and the ruthenium doped layer formed on the inner layer is ruthenium. 10 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic side view showing a cross section of a mold in which a crucible is formed. Brother 1A is an enlarged cross-sectional side view of an airway of the exhausted core of the brother 1 diagram. 15 Figure 2 is an enlarged view of the wall of Figure 1. Figures 3 and 4 are graphical illustrations of the method for making a glass crucible using the scale of Figure 1. v Figure 5 is a cross-sectional perspective view of the first conventional technique after use in the C Z method. 20 Figure 6 is a partial enlarged view of Figure 5. Figure 7 is a cross-sectional view taken along line 7-7 of Figure 6. Fig. 8 is a cross-sectional perspective view of the second conventional technique after use in the CZ method. Fig. 9 is a cross-sectional perspective view of the present invention in accordance with the present invention after use in the CZ method 8 200815629. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One aspect of the present invention provides a bismuth glass vortex comprising a layer of the innermost erbium doped layer having a devitrification effect and a thickness sufficient to extend the working time and without An intermediate layer of bubbles and bubbles that further comprises a stable outer layer that hardly expands during repeated pulling of the rod.
中間層具有無氣泡(,,BF,,)特性,其呈現出無氣泡生長 (”NBG”)且為2 mm或更厚。鋇摻雜内層厚度則小於大約0.4 10 mm,但最好小於大約(X2mm厚。外層之穩定度乃利用真空 燒結試驗C’VBT”)進行測定,其係以接近1650度C之溫度、 於接近0.1 Pa的壓力下燒結坩堝大約三小時之後測量厚度 變化,並將其標定為視密度。更具體地說,本坩堝於VBT 之後所觀測到的厚度增加小於1%,而視密度於VBT之後大 於2·05 g/cm3。 本發明這項觀點中的一個矽破璃坩堝乃藉將大量矽晶 粒(本質上由石英晶粒組成)饋入一個旋轉中的坩塥鑄模 中,此形成了一塊厚壁,接著將所形成之晶粒加熱以熔解 坩堝,同時有一個與鑄模相通的泵對整個所形成之晶粒抽 20氣,氣體從鍛燒過的晶粒中排出,且氣體會隨著晶粒熔化 而排出。全部氣體與一條連接内模面和泵之流動通道的傳 導率及泵之排氣功率保持動態平衡,此動態平衡受到控制 而使位於形成之晶粒熔化物前部處的大量氣相物質能維持 在小於製作一層BF或NBG矽玻璃層所要求的一個閾值。 9 200815629 2形成之晶㈣最内轉化後1 入’麵著移向㈣化之最内面而被料,因而形成了一 層融a在已成形晶粒之最内面處的鋇摻雜層。 製作坩堝之裝置具有一條連接内根:二 „甘免> * * 、面與泵的流動通 運,其内μ餘力甚低,岐㈣率μ朗要求之動 態平衡。流動通道可包含諸如管線1、流量計、以及透 氣模本身等結構’透氣模之流動阻力可㈣石墨模中的若 干通道以及朝向鑄模内侧上面之石墨的—個多孔材料加以The intermediate layer has a bubble free (, BF,,) property which exhibits bubble free growth ("NBG") and is 2 mm or thicker. The thickness of the ruthenium doped inner layer is less than about 0.4 10 mm, but preferably less than about (X2 mm thick. The stability of the outer layer is measured by vacuum sintering test C'VBT), which is close to the temperature of 1650 ° C, close to The thickness change was measured after sintering for about three hours at a pressure of 0.1 Pa and was calibrated to apparent density. More specifically, the thickness increase observed after the VBT was less than 1%, and the apparent density was greater than after VBT. 2·05 g/cm3. One of the viewpoints of the present invention is to feed a large amount of tantalum grains (essentially composed of quartz crystal grains) into a rotating tantalum mold, which forms a piece. Thick wall, then the formed crystal grains are heated to melt the crucible, and a pump connected to the mold pumpes 20 gas for the entire formed crystal grains, and the gas is discharged from the calcined crystal grains, and the gas will follow The grains are melted and discharged. The entire gas is dynamically balanced with the conductivity of a flow channel connecting the inner die face and the pump and the exhaust power of the pump. This dynamic balance is controlled to be located at the front of the formed crystal melt. A large amount of gas phase material can be maintained at a threshold lower than that required to make a layer of BF or NBG bismuth. 9 200815629 2 The crystal formed (4) After the innermost transformation, the surface is moved to the innermost surface of the (four), and thus A layer of germanium doped layer is formed at the innermost surface of the formed grain. The device for making the crucible has a connecting inner root: two „甘免> * *, the surface and the pump flow, and the remaining force Very low, 岐 (four) rate μ Lang required dynamic balance. The flow passage may include a flow resistance such as a line 1, a flow meter, and a venting mold itself. The flow resistance of the gas permeable mold may be (a) a plurality of holes in the graphite mold and a porous material facing the graphite on the inner side of the mold.
控制。 10 用以熔化已成形晶粒的熱必須夠強才能燒結熔融矽, 而使氣體不會在CZ法期間排出,此氣體釋放會導致坩堝壁 中形成氣泡或增生氣泡,此氣體釋放造成了坩堝壁膨脹, 依序導致熔融程度不一。 更詳細地說,本發明一方面提供了適用於CZ法中的一 15 個矽玻璃坩堝,該坩堝具有一層厚度為2 mm以上之無氣泡 中間層、——層不透明外層、以及一層厚度範圍高達大約0.4 mm的鋇摻雜層。於VBT(其係CZ法的/個加速模擬)之後的 壁厚變化乃小於或等於3%,最好是小於,換言之,坩堝 壁之視密度於VBT之後大於或等於2·〇5 g/cm3。此些微之厚 20 度變化起因於不透明層中的極微氣泡生長與内層中的極微 氣泡增生及生長兩者。 經過VBT之後,無氣泡内層在橫截面區域中含有少於 1%的氣泡量,而個別氣泡不會長成直徑大於〇.3mm。氣泡 含量乃氣泡影像面積總和除以穿透式光學顯微鏡在橫截面 200815629 影像中的總面積所得到之比值,氣泡尺寸亦可利用一部穿 透式光學顯微鏡测量。 整個壁的厚度變化係利用一個測微計測量,不透明層 最好估坩堝壁的50%到70%,至少25%,以符合極佳的散熱 5 特性。不透明層之視密度於VBT之後最好大於2.05 g/em3。 現在將注意力轉到第1及1A圖,10通常表示用於溶化本 發明之矽坩堝的一個系統,系統10包括一個具有内模面之 禱模12,模面14則包括一個大體上為圓柱形的垂直壁16。 於第1圖之鑄模中,壁16界定了 一個直徑大約18英吋的圓柱 1〇形空腔,但本發明對於具有較小或較大直徑之鑄模同樣相 當適用。 有多條氣道與内模面14相通,例如氣道18、20(從第1 及1 A圖中均可看出),每條氣道包括有一個圓柱孔,而在模 面14上形成一個圓形開口、例如開口 22、24。每條氣道、 15 例如第1A圖中的氣道2〇,含有一個多孔石墨栓塞、例如栓 基26,其防止矽石被從模穴抽入氣道中。氣道與歧管相通, 例如歧官28、30、32,歧管則依次與一個膛孔34相通。有 一個泵(由圖中無法看出)接至膛孔34,泵乃裝配為經由氣道 且最後透過膛孔34將空氣從模穴抽出系統1〇外。雖然可看 2〇出泵的容量通常介於大約每小時80和350立方米之間,但是 本發明可利用此範圍之外的泵完成,端視通道、膛孔、歧 官、閥、以及配置在模面14與泵之間的其他結構之傳導率 而定。所有配置在模面14與泵之間的結構在此稱為一條流 動通道。 11 200815629 鑄模12可透過-具馬達(未示出)⑽—根垂直轴_ 轉’有-組傳統式電極38 ' 40可垂直地進出禱模内部,電 極乃接至-個傳統DC電源供應器42上,其可選擇將範圍介 於大約300㈣到觀KVA之間的功率施於電極上,當足 5夠之功率作用於電極38、40上面時,電極周圍會有一:極 熱的電漿氣體球44形成。 禱模12含有-個已大致成形之㈣45,掛禍則由一層 46(放大圖示於第2圖中)溶融石夕構成,兹將其打破且部糾 顯示,以露出模面14。層46包含一層内層46a,其係一層平 10均厚度範圍可高達大約〇·4 mm的鋇摻雜熔融矽層;一層清 晰玻璃中間層46b,其厚度通常大於大約2〇咖;以及= 以不透明玻璃構成之厚外層46c。這三層46a、46b、46c: 起構成了坩堝45壁,正好於鑄模内成形,而留下一薄層未 熔融晶粒46d,原因在於内模面無法達到形成晶粒之炫點。 15 大體上說明系統10之運作,隨著鑄模12繞軸36轉動 時,將天然石英晶粒置入模内,坩堝外層、亦即模内最先 接收到的晶粒可利用於2001年7月16日所提申之美國專利 申請案第09/906,879號中敘述的方式摻雜紹,該申請案乃讓 渡予本申請案之受讓人,並將其在此列入通盤參考。一旦 20所有晶粒均裝入模内,則將電極38、40通電而啟動泵(圖中 無法看出)。一旦電極將晶粒加熱至最内表面上之晶粒開始 熔化的點時,會有一個熔化物前部形成,並隨著時間而從 坩堝最内表面逐漸接近模面14,熔化物前部於該處達到飽 和。將要說明的是,當從已加熱及正在熔化之晶粒釋出的 12 200815629 5 氣體、加上從尚祕化之晶粒所抽出的氣體(㈣經由已成 形晶粒之内表面及上表面)料功率及流動通道之傳 具有某—預定_時,則已成形之㈣的品質可精確地控 制。當最絲面上之晶粒熔化後,透過電漿加人鎖換雜曰 粒,以形成—層含有薄層㈣_融錢滑面的最内獅 對於重要參數的平衡有多項要求,首先,假設以時剛 為函數之熔融矽的量為G(t)。control. 10 The heat used to melt the formed grains must be strong enough to sinter the melting enthalpy, so that the gas will not be discharged during the CZ process. This gas release will cause bubbles or hyperplastic bubbles to form in the wall, which releases the walls. The expansion causes the degree of melting to be different. In more detail, one aspect of the present invention provides a 15 glass crucible suitable for use in the CZ process, the crucible having a bubble-free intermediate layer having a thickness of 2 mm or more, an opaque outer layer, and a thickness range up to A germanium doped layer of approximately 0.4 mm. The change in wall thickness after VBT (which is an acceleration simulation of the CZ method) is less than or equal to 3%, preferably less than, in other words, the apparent density of the crucible wall is greater than or equal to 2·〇5 g/cm3 after VBT. . These slight thickness variations of 20 degrees result from both the growth of very small bubbles in the opaque layer and the growth and growth of very small bubbles in the inner layer. After VBT, the bubble-free inner layer contains less than 1% of the amount of bubbles in the cross-sectional area, while the individual bubbles do not grow to a diameter greater than 〇.3 mm. The bubble content is the sum of the area of the bubble image divided by the total area of the transmissive optical microscope in the cross-section of the image of 200815629. The bubble size can also be measured using a penetrating optical microscope. The thickness variation of the entire wall is measured using a micrometer, and the opaque layer is preferably estimated to be 50% to 70%, at least 25%, of the wall to meet the excellent heat dissipation characteristics. The apparent density of the opaque layer is preferably greater than 2.05 g/em3 after VBT. Attention is now directed to Figures 1 and 1A, which generally represents a system for melting the crucible of the present invention, the system 10 includes a prayer mold 12 having an inner mold face, and the mold face 14 includes a substantially cylindrical shape. Shaped vertical wall 16. In the mold of Fig. 1, the wall 16 defines a cylindrical 1-inch cavity having a diameter of about 18 inches, but the present invention is equally applicable to a mold having a smaller or larger diameter. There are a plurality of air passages communicating with the inner mold face 14, such as the air passages 18, 20 (as can be seen from Figures 1 and 1A), each air passage including a cylindrical bore and a circular shape on the die face 14. Openings, such as openings 22, 24. Each airway, 15 such as airway 2A in Figure 1A, contains a porous graphite plug, such as a plug base 26, which prevents the vermiculite from being drawn into the airway from the cavity. The air passage communicates with the manifold, such as the manifolds 28, 30, 32, and the manifolds are in turn in communication with a bore 34. A pump (not visible in the figure) is connected to the bore 34, and the pump is assembled through the air passage and finally through the bore 34 to evacuate air from the cavity out of the system. Although it can be seen that the capacity of the pump is typically between approximately 80 and 350 cubic meters per hour, the present invention can be accomplished using pumps outside this range, end view channels, bores, manifolds, valves, and configurations. Depending on the conductivity of the other structures between the die face 14 and the pump. All of the structures disposed between the die face 14 and the pump are referred to herein as a flow channel. 11 200815629 Mold 12 permeable motor (not shown) (10) - vertical axis _ turn 'with-group conventional electrode 38 ' 40 can enter the interior of the prayer mode vertically, the electrode is connected to a traditional DC power supply At 42, it is optional to apply a power ranging from about 300 (four) to a viewing KVA to the electrode. When sufficient power of the foot 5 acts on the electrodes 38, 40, there is a very hot plasma gas around the electrode. Ball 44 is formed. The prayer mold 12 contains a substantially formed (four) 45, and the accident is composed of a layer 46 (enlarged in Fig. 2), which is broken and partially corrected to expose the mold surface 14. The layer 46 comprises an inner layer 46a which is a layer of germanium doped molten germanium having a thickness of up to about 4 mm in thickness; a clear glass intermediate layer 46b having a thickness of usually greater than about 2 Å; and = opaque The glass is made of a thick outer layer 46c. The three layers 46a, 46b, 46c: constitute the wall of the crucible 45, which is formed just in the mold, leaving a thin layer of unmelted crystal grains 46d because the inner mold surface cannot reach the dazzling point of forming crystal grains. 15 generally illustrates the operation of the system 10, as the mold 12 is rotated about the axis 36, the natural quartz crystal grains are placed in the mold, and the outer layer, that is, the first crystal grain received in the mold, can be utilized in July 2001. The method described in the U. Once all of the dies have been loaded into the mold, the electrodes 38, 40 are energized to activate the pump (not visible in the figure). Once the electrode heats the grain to the point where the grain on the innermost surface begins to melt, a melt front is formed and gradually approaches the die face 14 from the innermost surface of the crucible over time, the front of the melt being It is saturated. It will be explained that the 12 200815629 5 gas released from the heated and melting grains, plus the gas extracted from the still crystallized grains ((4) via the inner and upper surfaces of the formed grains) When the material power and the flow channel are transmitted with a certain - predetermined _, the quality of the formed (four) can be precisely controlled. When the crystal grains on the most silk surface are melted, the glutinous grains are replaced by the plasma to form a layer. The innermost lion with a thin layer (4) _ money sliding surface has many requirements for the balance of important parameters. First, It is assumed that the amount of melting enthalpy that is just a function of time is G(t).
起初,由於將石夕石預熱至所需的溶化溫度相當耗時, 10因想融㈣比率緩慢增加,㈣發·晶粒界面接著迅速地 行進直到其接近鑄模内表面,於某—特定點處,溶化物前 部達到飽和’未熔化之晶粒則餘留在鑄模纽融堆禍之 間,吾人已經發現G⑴大致上可利用_個誤差方程式表示。 當熔化物打進時,會有大量的氣體與溶化速度成比例 i5地釋出,氣體釋出的速度Vl75定義為每單位時間由炼化每 單位重量之熔融晶粒所釋出的氣體體積: VI = A · aG(t)/at ·_·⑴ 此處A係一比例常數。 已成形晶粒之密度不足以維持熔化物前部和周圍環境 20隔離,即使坩堝内表面被高密度玻璃相物質所覆蓋,空氣 仍可能穿過熔融壁與掛堝頂端處鱗模之間的未溶融晶粒, 因此除了已釋出的氣體之外,排氣系統應該處理此洩漏中 的氣體。吾人發現漏氣量與未熔融晶粒的量成比例,更精 確地說,吾人發現其和(l_erf(t))的三次方成比例,其中erf⑴ 13 200815629 為誤差函數,而B為比例常數。 V2=B · (l-erf⑴)3 (2) 此一参數VI及V2乃必須透過排氣裝置移除之主要氣 體來源,釋出氣體的量由方程式⑺表示,其中P為泵功率, 5而c為流動通道之正規化電導、亦即。 V3=P · C ...(3) 於晶粒-溶融石夕界面的溶化物前部處,氣流在V3和 (V1+V2)之間取得平衡。若整個平衡νι+ν2_ν3變成正值, 則溶融玻璃會含有更多溶解氣體;若其超過某一間值qi, 10則炼融石夕中會產生氣泡;若平衡為負值,則㈣石夕含有較 少溶解氣體。可使用第二閾值吸製作無氣泡玻璃,另—個 閾值Q3則用於無氣泡生長特性,此處^丨未必等於q]。 Q3及Q2 —如預期為負值,經過測定Q3係比Q2更大的 -個負值、亦即Q3<Q2。於VBt(其係Cz法的一個加速模擬) 15之後,可於傳統式坩堝中觀察到氣泡釋出或生長-即使所製 造之該坩堝為無氣泡坩堝。這些氣泡之釋出或生長起因於 内層中的溶解氣體之釋放,而溶解氣體係與平衡 (V1+V2-V3)之負值高低有關。 吾人亦發現,氣泡生長特性強烈受熔化溫度所影響, 2〇由於炼化速度隨著熔化溫度而增加,高熔化速度可增加氣 體釋出’故誕兩溶化溫度以滿足NBG要求相當重要。jD ^ 際上若所有增加的氣體未於形成時即釋出,則會形成氣 泡,而不利於内層。 坩堝之製造目標在於設計出能使(V1+V2_V3)維持適當 14 200815629 負值之裝置,以滿足内層之BF+NBG要求與外層之NBG要 求而同時符合層厚要求。更具體地說,當使用大於3〇〇 KVA DC的電弧供應源(且最好大於950 KVA)、並使用容量大於 每小時200立方米(且最好大於350立方米/小時)的氣泵(自 5由排氣式)製作大坩堝(亦即標稱尺寸大於24英对)時,可控 制(V1+V2-V3)而形成一層BF+NBG内層和一層NBG外層。 設計這種坩堝最明顯的限制點在於流動通道,例如管 線、接頭和閥’其必須具有大於10 cm2的最小橫截面積, 且最好大於或等於約50 mm的圓形直徑(亦即大約eg cm2 10的面積)。此尺寸乃和習知技藝呈強烈對比,其中這種管線 通常具有大約12 111111的直徑(亦即大約113(:1112的面積)。 最窄橫截面位於與成形晶粒之交界處,這些通道必須 維持夠小以防晶粒被降低的壓力吸進排氣系統中。 流動通道於晶粒界面處之各開口最好至少有〇 2平方 15公分(cm2),且至少0.6cm2更佳。界面配備了多孔材質,例 如多孔石墨栓塞26,其橫截面積如上所述,而最大長度大 約25 111111。由於機械上理由,吾人發現12111111最理想。 接著敘述利用上述裝置製作本發明之㈣的方'去。吾 人已經發現,從♦晶粒轉變成溶融碎期間主要係測定B f及 20 NBG特性’ Μ預熱處理(例如晶粒之锻燒)、亦非後献處理 (亦即掛祕化之後強烈燒結)能明顯地改變BF或NBG特 性。 本發明另-項觀點在於單靠真空程度並無法完全地控 制BF或娜,已經證實注入和移除的氣體之間必須平衡。 15 200815629 對於NBG特性而言,於CZ法中使用掛術獨亦必須釋出1 體,吾人已經測定,釋出的氣體和溶化溫度息息相關,: 言之,強烈燒結乃NBG之關鍵。 當於極薄之掛塥最内層配置鋇摻雜炫融石夕晶粒以防其 在失透作用期間隨著體積膨脹而破裂時,可提供具有鋇掺 雜效果之相關優點,這種輯對於大量摻雜了/、、砰^ 之矽熔化物特別有用。At first, it is quite time consuming to preheat the Shi Xishi to the required melting temperature, 10 because the ratio of melting (4) is slowly increasing, and (4) the grain interface then proceeds rapidly until it approaches the inner surface of the mold, at a certain point. At the front, the front part of the melt reaches saturation. The unmelted crystal remains between the mold and the reactor. We have found that G(1) can be roughly expressed by the error equation. When the melt is driven in, a large amount of gas is released in proportion to the melting rate i5, and the velocity Vl75 of the gas evolution is defined as the volume of gas released per unit weight of molten crystals per unit time: VI = A · aG(t)/at ·_·(1) where A is a proportional constant. The density of the formed grains is insufficient to maintain the front of the melt from the surrounding environment 20, even though the inner surface of the crucible is covered by the high-density glass phase material, air may still pass between the molten wall and the scale mold at the top of the hanging crucible. The grains are melted, so the exhaust system should treat the gas in the leak in addition to the released gas. We have found that the amount of air leakage is proportional to the amount of unmelted grains. More precisely, we find that it is proportional to the cube of (l_erf(t)), where erf(1) 13 200815629 is the error function and B is the proportionality constant. V2=B · (l-erf(1))3 (2) This parameter VI and V2 is the main source of gas that must be removed through the exhaust. The amount of gas released is expressed by equation (7), where P is the pump power, 5 c is the normalized conductance of the flow channel, ie. V3 = P · C (3) At the front of the melt at the grain-melting stone interface, the gas flow is balanced between V3 and (V1 + V2). If the whole equilibrium νι+ν2_ν3 becomes positive, the molten glass will contain more dissolved gas; if it exceeds a certain value qi, 10 will produce bubbles in the smelting stone; if the equilibrium is negative, then (4) Shi Xi Contains less dissolved gases. The bubble-free glass can be made using the second threshold, and the other threshold Q3 is used for the bubble-free growth characteristic, where ^丨 is not necessarily equal to q]. Q3 and Q2 - If the expected value is negative, it is determined that Q3 is larger than Q2 - a negative value, that is, Q3 < Q2. After VBt (which is an accelerated simulation of the Cz method) 15, bubble release or growth can be observed in conventional crucibles - even if the crucible is made to be bubble free. The release or growth of these bubbles is caused by the release of dissolved gases in the inner layer, which is related to the negative value of the equilibrium (V1 + V2 - V3). We have also found that the bubble growth characteristics are strongly affected by the melting temperature. 2〇 Since the refining speed increases with the melting temperature, it is important that the high melting rate increases the gas release rate to meet the NBG requirements. If all the added gas is released when it is not formed, it will form bubbles, which is not conducive to the inner layer.制造's manufacturing goal is to design a device that can maintain (V1+V2_V3) the appropriate 14 200815629 negative value to meet the BF+NBG requirements of the inner layer and the NBG requirements of the outer layer while meeting the layer thickness requirements. More specifically, when an arc supply source (and preferably greater than 950 KVA) greater than 3 〇〇 KVA DC is used, and a gas pump having a capacity greater than 200 cubic meters per hour (and preferably greater than 350 cubic meters per hour) is used (from 5 When the sputum is made of venting (that is, the nominal size is greater than 24 inches), it can control (V1+V2-V3) to form a layer of BF+NBG inner layer and a layer of NBG outer layer. The most obvious limitation in designing such a flaw is that the flow passages, such as lines, joints and valves, must have a minimum cross-sectional area of more than 10 cm2, and preferably a diameter of more than or equal to about 50 mm (i.e., about eg The area of cm2 10). This dimension is in sharp contrast to the prior art in which such a line typically has a diameter of about 12 111111 (i.e., an area of about 113 (: 1112). The narrowest cross section is at the junction with the shaped grains, which must The pressure is maintained small enough to prevent the die from being lowered into the exhaust system. Preferably, each opening of the flow channel at the grain boundary is at least 2 square centimeters (cm2) and more preferably at least 0.6 cm2. A porous material, such as a porous graphite plug 26, has a cross-sectional area as described above and a maximum length of about 25 111111. For mechanical reasons, we have found that 12111111 is most desirable. Next, the square of the invention (4) using the above apparatus will be described. We have found that the main characteristics of B f and 20 NBG are measured during the transition from ♦ grain to smelting. Μ Pre-heat treatment (such as grain calcination), and not post-treatment (ie, after secluding) Sintering) can significantly change the BF or NBG characteristics. Another aspect of the present invention is that BF or Na cannot be completely controlled by the degree of vacuum alone, and it has been confirmed that the injected and removed gases must be balanced. 15 200815629 For the NBG characteristics, the use of Hanging alone in the CZ method must also release 1 body. We have determined that the released gas is closely related to the melting temperature. In other words, strong sintering is the key to NBG. The innermost layer of the extremely thin hanging 钡 钡 炫 炫 炫 炫 晶粒 晶粒 晶粒 晶粒 以 以 以 以 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒Miscellaneous /, 砰 ^ 矽 melting is particularly useful.
第3及4圖中例示之方法描述了如何利用第^的系统 製作第1圖中所示之㈣45。欲形成一層塊狀晶粒⑽,使 1〇用了大容量晶粒料斗50、節流閥52以及供料管54。於第3圖 中,將塊狀石夕晶粒56倒入鑄模12中以形成塊狀晶粒層48, 塊狀石夕晶粒56最好為純石英晶粒。通常利用一片形狀和禱 模内表面匹配之到刀60將注入的塊狀石夕晶粒予以塑形,以 此方式,塊狀晶粒層48可形成所選定之厚度。 15 成形矽晶粒之熔化物繪示於第4圖中,電極38、4〇部分 地配置在旋轉中鑄模12的内模穴内部,如上所述,有一個 电弧於电極38、40之間產生,因而在模穴内部形成一個熱 66區域’此熱66係用以熔化鑄模内所形成之塊狀晶粒層48。 熔化物由近而遠(相對於電極38、4〇)穿過已成形之晶 20粒,熟悉技藝者應瞭解此技術中熔化物穿過矽晶粒層之進 仃機制,例如Uchikawa等人之美國專利第4,935,046及 4,956,208號中所述。 當已形成之塊狀晶粒層48的表面熔化後,内側的矽晶 粒68從内側矽晶粒料斗70經由供料管72倒出,可利用内側 16 200815629 晶粒節流閥74控制内侧晶粒68注入熱66區域的速度。電極 之間所產生的電5瓜形成了一個強烈電漿場,將已部分地溶 化之内侧矽晶粒68往外推,使其能夠沈積於坩堝内表面的 側面和底部。内側晶粒68穿過加熱區66,至少部分地被其 5中的電孤火焰所溶化,並沈積於溶融塊狀晶粒層48的表面 上。 此内側晶粒68與塊狀晶粒層融合成内層46a,溶化的内 側晶粒因此不斷地沈積和融合一段時間而形成内層46a。熔 融内層46a之厚度係利用内侧矽晶粒之注入速度和熔化期 10間内侧晶粒的供應時間加以控制。 内侧石夕晶粒68本質上由摻雜了鋇之純矽晶粒組成,例 如經洗淨除去污物之天然矽晶粒。另外,亦可使用摻雜了 鋇之合成矽晶粒。 於第一個範例中,利用直徑18英吋之鑄模形成一個外 15徑18英吋的坩堝,例如第1圖中的坩堝45。如第3圖中所示, 當基底晶粒56置於鑄模12中並形成塊狀晶粒層佔之後,經 由膛孔34施以大約3〇〇 m3/hl•的一個自由排氣速度卯秒鐘, 同時電極38、40產生第4圖中的熱區66。此形成了一個熔化 物前部,從鑄模中的塊狀晶粒内表面朝鑄模壁行進,經過 20大約90秒,熔化物前部觸及層46b的最外壁,此形成了清晰 玻璃層46b。 之後’將真空壓力降至大約700托,而溶化物前部則接 近模壁’層偏代表較窄層的未溶融妙,其由於相當接近模 壁而無法加熱溶化。 17 200815629 ㈣二:之最内層形成一段時間後、亦即炼化物前部開 移動,從料斗7G將鋇摻雜晶粒饋人熱祕,此晶 5 10 15 20 ΓΓ料在熱區⑽化推向已熔化之厚 ^因而形成鋇摻雜層46a。在此範例中,晶粒68係由推雜 wt ppm鋇之晶粒組成,此晶粒尺寸範圍從励到_ t 於晶㈣能僅由加熱區部分崎化,其未必能均 勾地分佈,且最内層在摻雜程度及深度上可能不同’其某 1區域可能㈣·lmnmT,但平均大·2mm。在此範 例中,對於18英奴單-㈣而言,總共有9G公克之刚wt ppm鋇摻雜晶粒從料斗7〇供應。 在此例中,90公克之摻雜晶粒係於開始加熱之後供應 ^約6分鐘到大約7分鐘10秒,於是,在開始形成層46 a之 刖,中間層46b和大部分的厚層松即形成。於開始加熱時, 即啟動大_3/㈣最大限度排氣流速,並於開始加献後 切換成彻托之真U觸秒,纽化物大體上完成時,再 維持700托之真空大約8分鐘,。 在另-個範例中,除了供應⑽公克之摻雜晶粒外,所 有參數均維持不變。隨著晶粒在㈣内加熱至裂化並使炼 化物穿過層46b’約有公克以上之晶粒會膨脹成相當厚 的層46a,此對CZ法有不利影響。· 應該庄w的疋,不需利用高壓真空形成層你^即可獲得 #乂/專鋇摻a層之優點,換言之,可制如上所述之薄型鎖 内層(平均厚度小⑨大約〇·2 mm)提高失透效果,同時維持夠 薄以免該層在cz法期間膨脹時破裂。 18 200815629 翻閱第5圖,第一種習知技藝坩堝8〇包含一層熔融矽外 壁82,顯不並無上述之無氣泡及無氣泡生長特質,並有一 層鋇摻雜内層84,其在習知技藝中乃大於〇.2腿。由第帽 之放大圖中可以看出,於一cz熔融期間,坩堝80出現若干 5凹孔、例如凹孔85、86(亦可於第7圖中看出),並於底部和 例土之間的接面出現裂缝,其乃cz法期間最熱之區域。這 二凹孔及裂縫起因於坩堝製作期間落入層82中的氣泡。於The method illustrated in Figures 3 and 4 describes how to use the system of the second method to produce (4) 45 shown in Figure 1. To form a layer of massive grains (10), a large-capacity crystal hopper 50, a throttle valve 52, and a supply pipe 54 are used. In Fig. 3, the massive quartz crystal grains 56 are poured into the mold 12 to form a bulk crystal grain layer 48, which is preferably a pure quartz crystal grain. The inlaid block-shaped granules are typically shaped using a shape and a matching internal surface of the blade to the knives 60, in such a manner that the slab layer 48 can be formed to a selected thickness. 15 The melt of the formed crucible grains is shown in Fig. 4, and the electrodes 38, 4 are partially disposed inside the inner cavity of the rotating mold 12, as described above, there is an arc between the electrodes 38, 40. This produces a hot 66 region inside the cavity which is used to melt the bulk seed layer 48 formed in the mold. The melt passes through the formed crystals 20 from near to far (relative to the electrodes 38, 4 〇), and those skilled in the art should understand the mechanism by which the melt passes through the ruthenium grain layer, such as Uchikawa et al. U.S. Patent Nos. 4,935,046 and 4,956,208. After the surface of the formed bulk crystal grain layer 48 is melted, the inner tantalum crystal grains 68 are poured out from the inner tantalum crystal hopper 70 via the supply tube 72, and the inner crystal can be controlled by the inner 16 200815629 grain throttle valve 74. The velocity at which the pellet 68 is injected into the hot 66 region. The electricity generated between the electrodes forms a strong plasma field that pushes the partially melted inner crucible grains 68 outwardly so that they can be deposited on the sides and bottom of the inner surface of the crucible. The inner die 68 passes through the heating zone 66, is at least partially melted by the electric arcing flame in its 5, and is deposited on the surface of the molten bulk seed layer 48. The inner crystal grains 68 are fused with the bulk crystal grain layer to form the inner layer 46a, and the melted inner crystal grains are thus continuously deposited and fused for a period of time to form the inner layer 46a. The thickness of the melted inner layer 46a is controlled by the injection speed of the inner tantalum grains and the supply time of the inner crystal grains of the melt period. The inner diagenetic grain 68 is essentially composed of pure cerium grains doped with cerium, such as natural cerium grains that have been washed to remove contaminants. Alternatively, a synthetic germanium grain doped with germanium may also be used. In the first example, a 15 inch diameter cast is used to form an outer 15 inch 18 inch crucible, such as the crucible 45 in Fig. 1. As shown in Fig. 3, after the base crystal grains 56 are placed in the mold 12 and formed into a bulk crystal grain layer, a free exhaust velocity of about 3 〇〇 m3 / hl is applied via the bore 34. At the same time, the electrodes 38, 40 produce the hot zone 66 in Fig. 4. This forms a front portion of the melt which travels from the inner surface of the massive grains in the mold toward the wall of the mold. After about 20 seconds, the front portion of the melt touches the outermost wall of layer 46b, which forms a clear glass layer 46b. Thereafter, the vacuum pressure is reduced to about 700 Torr, and the front portion of the melt is adjacent to the wall. The layer deflection represents the unmeltedness of the narrower layer, which cannot be heated to dissolve due to the proximity of the mold wall. 17 200815629 (4) 2: After the innermost layer is formed for a period of time, that is, the front part of the refinery is moved, the 钡-doped grains are fed from the hopper 7G to the heat, and the crystal 5 10 15 20 is pushed in the hot zone (10). To the already melted thickness, a tantalum doped layer 46a is thus formed. In this example, the grains 68 are composed of grains of a wt ppm ,, which range from excitation to _ t. The crystals (4) can only be partially ablated by the heating zone, which may not be uniformly distributed. And the innermost layer may be different in doping degree and depth. 'One of the regions may be (4)·lmnmT, but the average is 2 mm. In this example, for a total of 18 gram single-(four), a total of 9 Gg of wt ppm 钡 doped granules are supplied from the hopper 7 。. In this case, the 90 gram doped granules are supplied for about 6 minutes to about 7 minutes and 10 seconds after the start of heating, so that after the formation of the layer 46a, the intermediate layer 46b and most of the thick layer of pine are formed. That is formed. At the beginning of heating, the maximum _3/(4) maximum exhaust flow rate is started, and after the start of the addition, the true U-touch seconds are switched to the full, and when the new compound is substantially completed, the vacuum of 700 Torr is maintained for about 8 minutes. ,. In another example, all parameters were maintained except for the doped grains of (10) grams. This tends to adversely affect the CZ process as the grains are heated in (4) to crack and the refinery passes through the layer 46b' and the grains above about gram expand to a relatively thick layer 46a. · You should use Zhuang's 疋, you don't need to use high-pressure vacuum to form a layer. You can get the advantage of #乂/专钡一层, in other words, you can make the thin inner layer as described above (the average thickness is about 9 〇·2 Mm) Improves the devitrification effect while maintaining a thin enough to prevent the layer from rupturing during expansion during the cz method. 18 200815629 Referring to Figure 5, the first conventional technique 8b includes a layer of molten crucible outer wall 82, which is substantially free of the above-described bubble-free and bubble-free growth characteristics, and has a layer of antimony doped inner layer 84, which is conventionally known. The skill is greater than 〇.2 legs. As can be seen from the enlarged view of the cap, during the melting of a cz, a number of 5 recessed holes, such as recessed holes 85, 86 (as seen in Fig. 7), appear at the bottom and the soil. There is a crack in the joint, which is the hottest area during the cz method. These two recesses and cracks are caused by bubbles that fall into the layer 82 during the fabrication of the crucible. to
=法期間’這些氣泡會生長並釋出氣體,因而產纟第6圖中 曰丁之破衣及凹陷表面,這在cz法期間可能會釋出微粒至 熔化物中,當夠嚴重時,Cz法中的溶化物可能穿入層82内, 此並非吾人所欲。 #由第7圖中可以看出,形成凹孔85、86之氣泡亦形成了 右干條和摻雜層84與層82之間的界面約相通之通道π、 88於疋,坩堝8〇中的矽熔化物會穿入界面89中。 於第8圖中,另一種坩堝90乃做成類似第5圖中的坩堝 /、亦包含一層外侧熔融壁92和一内側鋇摻雜層94。於 15 cz溶融期間,層94會脫層(通常標示於 9與8 =間留下-個空隙。層94之另—個部分(通常標示於 會脫層並㈣’因而使層92的表面於cz_間暴露於 、化物中。廷些情況起因於層94在CZ熔融期間隨著其失去 透明性且體積軸,兩種情況㈣cz法有不利影響。 最後,第9圖緣示了掛螞45(fl圖中)用於一 cz法之後 2形輯上面有一條明顯的溶化線1〇〇,此溶化線乃a 〜月間’於_、職物無圍空氣之交界處形成的 19 200815629 一條淺溝。可以看出,由於暴露在矽熔化物中,位於熔化 線以下的表面具有最低限度之均勻結構,然而並無習知技 藝中的鋇摻雜層破裂、凹陷、脫層或剝落現象,上述兩個 fe例通常正如第9圖所敘述和可看出的情況。 5 熟悉技術者將能完全依照本文所述實現本發明,為了 更徹底瞭解本發明,已經陳述了眾多細節,於其他實例中, 尚未洋細說明眾所周知的特色,以免不必要地模糊了本發 明。 雖然已經就其較佳型式說明了本發明,然而此處所揭 10示及例示之特定實施例並不希望造成限制,毫無疑問地, 熟悉技術者依照本發明應該报容易瞭解,本發明可以眾多 方式進行變更,發明者認為本發明之内容必須包括此處敘 述之各種不同元件、特色、功能及(或)性質的所有組合和次 組合。 15 【圖式簡單說明】 第1圖乃其内形成了一個坩堝之鑄模橫截面概略圖解 側視圖。 第1A圖為第1圖之掛瑪鱗模的一條氣道之放大橫截面 侧視圖。 20 第2圖為第1圖之坩堝壁的_個放大圖。 第3及4圖為祕以第1圖之鑄模製作石夕玻璃掛禍的方 法之圖解說明。 第5圖為第-種習知技藝叫法中使用之後的一 個截面透視圖。 20 200815629 第6圖為第5圖之坩堝的部分放大圖。 第7圖為沿第6圖之線段7-7所取的一個橫截面圖。 第8圖第二種習知技藝坩堝於CZ法中使用之後的一個 截面透視圖 5 第9圖為根據本發明而完成之坩堝於CZ法中使用之後 的一個截面透視圖。During the period of the law, these bubbles will grow and release gas, thus producing the cloaked and sunken surface of the cockroach in Figure 6, which may release particles into the melt during the cz method. When it is severe enough, Cz The melt in the process may penetrate into the layer 82, which is not what I want. # It can be seen from Fig. 7 that the bubbles forming the recesses 85, 86 also form the channels π, 88, 疋8〇, which are connected to the right stem and the interface between the doped layer 84 and the layer 82. The crucible melt will penetrate into the interface 89. In Fig. 8, another crucible 90 is formed similar to 坩埚 in Fig. 5, and also includes a layer of outer molten wall 92 and an inner side doped layer 94. During the 15 cz melt, layer 94 will delaminate (usually marked between 9 and 8 = leaving a gap. Another portion of layer 94 (usually labeled as delaminating and (d)) thus causing the surface of layer 92 to The cz_ is exposed to the compound. The situation is caused by the fact that the layer 94 loses its transparency and volume axis during the CZ melting, and the two cases (4) cz method have an adverse effect. Finally, the figure 9 shows the hanging grass 45. (in the figure of fl), after a cz method, there is an obvious melting line 1〇〇 on the 2 shape series. This melting line is formed by a month between the month of the month and the end of the air. It can be seen that the surface below the melting line has a minimal uniform structure due to exposure to the bismuth melt, however there is no rupture, dent, delamination or spalling of the erbium doped layer in the prior art, The two examples are generally as described and illustrated in Figure 9. 5 Those skilled in the art will be able to implement the present invention in full accordance with the teachings herein. For a more complete understanding of the present invention, numerous details have been set forth, in other examples. , not yet detailed description The present invention is not intended to be unnecessarily obscured. The present invention has been described in terms of its preferred embodiments, and the specific embodiments shown and described herein are not intended to be limiting, and no doubt It is to be understood that the present invention may be susceptible to various modifications and modifications of the invention. The invention is intended to include all combinations and sub-combinations of various elements, features, functions and/or properties described herein. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic side view showing a cross section of a mold in which a crucible is formed. Fig. 1A is an enlarged cross-sectional side view of an air passage of the hanging scale mold of Fig. 1. 20 Fig. 2 Fig. 1 is a magnified view of the wall of the wall. Figures 3 and 4 are diagrams illustrating the method of making a stone sac in the mold of Fig. 1. Fig. 5 is the first known technique. A cross-sectional perspective view after use. 20 200815629 Figure 6 is a partial enlarged view of Figure 5, and Figure 7 is a cross-sectional view taken along line 7-7 of Figure 6. Figure 8 Kind of knowledge A sectional perspective view of a crucible in the CZ method Yi used after the first 5 9 The picture shows the completed crucible of the present invention in a sectional perspective view after the CZ method used.
【主要元件符號說明】 10…系統 46b…中間層 12…鑄模 46c…厚外層 14…内模面 46d· · ·未容融晶粒 16…垂直壁 48···晶粒層 18、、20…氣道 50、70…料斗 22、、24…開口 52、74…節流閥 26…检塞 54、72···供料管 28、30、32…歧管 56、68···秒晶粒 34···膛孔 58…基底晶粒 36…垂直轴 60"·刮刀 38、40···電極 66…熱區 42…電源供應器 82…外壁 45、80、90···甜塌 84…銀摻雜内層 46…層 85、86···凹孔 46a···内層 87、88···通道 21 96 … 200815629 98…剝落層 100···熔化線 89···界面 92…熔融壁 94···鋇摻雜層[Description of main components] 10...System 46b...Intermediate layer 12...Mold 46c...Thick outer layer 14...Inner mold surface 46d···Unfused grain 16...Vertical wall 48···Grade layer 18, 20... Air passages 50, 70... hoppers 22, 24... openings 52, 74... throttle valves 26... plugs 54, 72 · · supply tubes 28, 30, 32... manifolds 56, 68 · · · seconds die 34 ···膛孔58...substrate die 36...vertical axis 60"·scraper 38,40···electrode 66...hot zone 42...power supply 82...outer wall 45,80,90···sweet 84...silver Doped inner layer 46...layer 85,86···recessed hole 46a···inner layer 87,88···channel 21 96 ... 200815629 98... peeling layer 100···melting line 89···interface 92...melting wall 94 ···钡Doped layer
22twenty two
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| US11/536,517 US7427327B2 (en) | 2005-09-08 | 2006-09-28 | Silica glass crucible with barium-doped inner wall |
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| TWI454425B (en) * | 2009-10-14 | 2014-10-01 | Shinetsu Quartz Prod | Silica, silica containers and the manufacture of such powders or containers |
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| MY147189A (en) | 2006-12-22 | 2012-11-14 | Denki Kagaku Kogyo Kk | Amorphous silica powder, method for production thereof, and semiconductor sealing material |
| JP5167073B2 (en) * | 2008-11-05 | 2013-03-21 | 信越石英株式会社 | Silica container and method for producing the same |
| US9003832B2 (en) | 2009-11-20 | 2015-04-14 | Heraeus Shin-Etsu America, Inc. | Method of making a silica crucible in a controlled atmosphere |
| JP4951057B2 (en) | 2009-12-10 | 2012-06-13 | 信越石英株式会社 | Silica container and method for producing the same |
| JP5692996B2 (en) * | 2009-12-15 | 2015-04-01 | 株式会社Sumco | Quartz crucible mold |
| JP4854814B1 (en) * | 2011-04-28 | 2012-01-18 | Ftb研究所株式会社 | Method for coating quartz crucible for silicon crystal growth and quartz crucible for silicon crystal growth |
| JP5509189B2 (en) | 2011-12-26 | 2014-06-04 | ジルトロニック アクチエンゲゼルシャフト | Method for producing single crystal silicon |
| JP5509188B2 (en) | 2011-12-26 | 2014-06-04 | ジルトロニック アクチエンゲゼルシャフト | Method for producing single crystal silicon |
| JP5487259B2 (en) * | 2012-08-07 | 2014-05-07 | 信越石英株式会社 | Silica container |
| US10829869B2 (en) | 2016-06-29 | 2020-11-10 | Crystal Systems Corporation | Single-crystal production equipment and single-crystal production method |
| JP6562525B2 (en) * | 2016-07-28 | 2019-08-21 | 株式会社クリスタルシステム | Single crystal manufacturing equipment |
| CN110546315B (en) | 2018-03-29 | 2021-09-03 | 株式会社水晶系统 | Single crystal manufacturing apparatus |
| CN109267148A (en) * | 2018-11-29 | 2019-01-25 | 内蒙古中环光伏材料有限公司 | A kind of process of silica crucible and its multiple coating of silica crucible |
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| JP2830987B2 (en) * | 1994-07-19 | 1998-12-02 | 信越石英株式会社 | Quartz glass crucible and manufacturing method thereof |
| JP4285788B2 (en) * | 1996-03-14 | 2009-06-24 | 信越石英株式会社 | Manufacturing method of large diameter quartz crucible for single crystal pulling |
| JP4398527B2 (en) * | 1998-05-25 | 2010-01-13 | 信越石英株式会社 | Silica glass crucible for pulling silicon single crystals |
| JP3765368B2 (en) * | 1999-06-01 | 2006-04-12 | 東芝セラミックス株式会社 | Quartz glass crucible and method for producing the same |
| JP2003095678A (en) * | 2001-07-16 | 2003-04-03 | Heraeus Shin-Etsu America | Doped quartz glass crucible for producing silicon single crystal and method for manufacturing the same |
| US6641663B2 (en) * | 2001-12-12 | 2003-11-04 | Heracus Shin-Estu America | Silica crucible with inner layer crystallizer and method |
| DE10217946A1 (en) * | 2002-04-22 | 2003-11-13 | Heraeus Quarzglas | Quartz glass crucible and method of manufacturing the same |
| JP2005145731A (en) * | 2003-11-12 | 2005-06-09 | Kuramoto Seisakusho Co Ltd | Crystallized quartz crucible |
| US20050120945A1 (en) * | 2003-12-03 | 2005-06-09 | General Electric Company | Quartz crucibles having reduced bubble content and method of making thereof |
| JP2005306708A (en) * | 2004-03-26 | 2005-11-04 | Kuramoto Seisakusho Co Ltd | Quartz crucible |
| JP2006021985A (en) * | 2004-06-10 | 2006-01-26 | Kuramoto Seisakusho Co Ltd | Quartz crucible |
| JP4761355B2 (en) * | 2005-08-26 | 2011-08-31 | 信越石英株式会社 | Method for producing metal element-doped large quartz glass member and metal element-doped large quartz glass member obtained by the production method |
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| KR101375622B1 (en) | 2014-03-18 |
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| KR20130023316A (en) | 2013-03-07 |
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