TW200815282A - Carbon nanomaterial, manufacturing method therefor, electronic element and electronic device - Google Patents
Carbon nanomaterial, manufacturing method therefor, electronic element and electronic device Download PDFInfo
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- TW200815282A TW200815282A TW96130125A TW96130125A TW200815282A TW 200815282 A TW200815282 A TW 200815282A TW 96130125 A TW96130125 A TW 96130125A TW 96130125 A TW96130125 A TW 96130125A TW 200815282 A TW200815282 A TW 200815282A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 145
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 82
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 80
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000463 material Substances 0.000 claims abstract description 106
- 238000000034 method Methods 0.000 claims abstract description 35
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- 238000012986 modification Methods 0.000 claims abstract description 22
- 239000000126 substance Substances 0.000 claims description 100
- 239000002071 nanotube Substances 0.000 claims description 61
- 229910002804 graphite Inorganic materials 0.000 claims description 38
- 239000010439 graphite Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 37
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Chemical class 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 150000001721 carbon Chemical class 0.000 claims description 8
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- 239000002207 metabolite Substances 0.000 claims 1
- 239000002041 carbon nanotube Substances 0.000 abstract description 40
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- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 14
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 2
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- WJMXTYZCTXTFJM-UHFFFAOYSA-N 1,1,1,2-tetraethoxydecane Chemical compound C(C)OC(C(OCC)(OCC)OCC)CCCCCCCC WJMXTYZCTXTFJM-UHFFFAOYSA-N 0.000 description 1
- FDIPWBUDOCPIMH-UHFFFAOYSA-N 2-decylphenol Chemical compound CCCCCCCCCCC1=CC=CC=C1O FDIPWBUDOCPIMH-UHFFFAOYSA-N 0.000 description 1
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- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241000255925 Diptera Species 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
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- VCUFZILGIRCDQQ-KRWDZBQOSA-N N-[[(5S)-2-oxo-3-(2-oxo-3H-1,3-benzoxazol-6-yl)-1,3-oxazolidin-5-yl]methyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C1O[C@H](CN1C1=CC2=C(NC(O2)=O)C=C1)CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F VCUFZILGIRCDQQ-KRWDZBQOSA-N 0.000 description 1
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- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
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- 229910052797 bismuth Inorganic materials 0.000 description 1
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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Landscapes
- Carbon And Carbon Compounds (AREA)
Abstract
Description
200815282 九、發明說明:200815282 IX. Description of invention:
L名务明戶斤才支射員支或]I 發明領域 本發明係有關於碳系奈米材料之表面改質技術。 5 【才支冬好】 發明背景 近年來,人們多加檢討於包含有半導體裝置及印刷配 線板等之半導體積體電路裝置中,在具有導電體及熱傳導 體性質之電子零件上,使用所謂碳奈米管(CNT)之技術。 10 特別是’ CNT具有優異的化學穩定性,以及出色的物 理性、電性上的性質等多樣特性,並以半導體裝置的形成 材料而引起矚目,譬如其粗度及長度的控制外,形成位置 的控制及空間螺旋特性(chirality)的控制等,於今人們亦持 績進行各種研究。 15 具體的用途上,受到注目的有電子機器的電磁波遮蔽 用構件、超LSI等之高機能電子元件的冷卻用凸塊材料、及 半導體裝置的配線通孔構造件、半導體元件之零件(譬如電 晶體之閘極電極、源極電極、汲極電極、通道電極等)等。 可考慮下述之應用,譬如利用CNT熱傳導性極高之性 2〇質二讓CNT高密度地在半導體製程基板上長成,並將之作 為導電電路其中-部分,或是由搭載於製程基板上的電子 凡件(半導體裝置)伸出的接著部構造,以及讓由該構造部而 產生的元件發熱加以散熱之排熱路徑(所謂「凸塊構造) 進而,下述場合亦可考慮為其一應用,即,利 5 200815282 其極高的電傳導性,作為具有超微細構造的半導體袭置(半 導體元件)其高密度配線構造中的通孔配線構造體而加以 使用。 第5圖係例示利用如前述之CNT來作為高機能電子元 5 件之冷卻用凸塊材料而加以使用之構造(譬如參照非專利 文獻1)其中一例。如第5圖所示,此種高機能電子元件的冷 " 卻用凸塊構造係可譬如以下述程序加以製造,即,籍由賤 馨 鍍等而於基板(氮化鋁(AIN、鋁等))51上之電極52上面,堆 積觸媒金屬載置膜(譬如TiN膜)與觸媒金屬膜(c〇等)(兩者 10合併以標號53表示)’接著藉由使用碳化氫系氣體(cjj4、 6¾等)之熱CVD法(熱化學氣相沈積法)等,讓CNT54長成 後,藉由鍍敷(濕式處理)等而讓傳導性物質(Cll、A1等之金 屬等)附著於前述具CNT之基板的CNT部上,以製作€1^丁凸 塊構造。之後,可將電子元件熱壓著(宜為25〇。(:〜45〇。(:程 15 度)於該基板上,而製作高熱傳導性電子元件。 φ 又’第1圖係例示利用前述CNT的配線通孔構造(譬如 參照專利文獻1及非專利文獻2)其中一例。如第1圖所示, 此種通孔構造係可以下述程序加以製造,即,於基上設 置基底層2及Cu配線層3 ’再於該Cu配線層3上堆積用以防 v 止Cu擴散的阻隔膜(Ta膜專)4,並於阻隔膜4上設置絕緣膜 5’再於設置通孔後,藉由濺鑛等而堆積觸媒金屬載置膜(譬 如Ti膜)6與Co等之觸媒金屬膜(或觸媒微粒子層)7,接著, 藉由使用碳化氫系氣體(CH4、QH2等)之熱cVD法(熱化學 氣相沈積法)等讓CNT8長成後,再形成上部配線。第!圖中 6 200815282 亦例示有用以固定CNT8之充填樹腸9。 專利文獻i :日本專利公開公報特開雇_32彻號(申 請專利之範圍)。 專利文獻2 ·日本料公報特開謂號(申 5 請專利之範圍)。 • 非專利文獻1:富士通股份有限公司、股份有限公司富 士通研九所、「世界首發!將唆奈米管活用於半導體晶片 • 雜熱基板上」(以上之日文原文為·· f 士通株式会社、株 式会社富士通研究所、「世界初!力一求^十^千二一y 1〇蚤半$体千7 7 0放熱基板匕活用」)、2005年12月5曰、 [2006年8月18曰檢索] '網際網路、 <皿[:卿年利敝嶋如/崎8/2〇〇5/12/5^咖 非專利文獻2 · 一瓿專之著作者、r japanese journai 0f Applied Physics」(以上之日文原文為二瓶&十六二一 15欠· 1个一十;1/ ·才彳· 了7。今4 47夕只」)、 _ 2005年、第44卷、pl626。 t ^^明内】 發明概要 然而,雖然碳奈米管本身具有優異的導電性、半導體 、 2〇性、熱傳導性、化學穩定性等,但卻已知有下述問題,即, 與其他材料接合物和性不足,有時接續部巾的導電性及 熱傳導性會大幅降低,而無法獲得十足的層間接著性、密 著性等問題。又,此問題在下述場合,即,於义基板上, 固定住其中一端,並將由CVD所製得的奈米管用於配線用 7 200815282 途上時,同樣會產生。 此一問題可藉由在製造零件時,將零件與cnt的周邊 層完全密著而獲得解決。但在無法解決CNT與其他材料間 之界面缺乏親和性此情況下,則具有並無法實現如前述的 5密著之問題。此亦係CNT在所有用途上的共通課題。 —般而言,CNT係藉由習知之製法{雷射燒師繼 、 :_)、化學氣相沈積法(CVD)、HiPC〇(高壓一氧化碳 • 裂解法(high_P賴则Carbon職oxide))法等}而加以f 造。藉由前述方法賴得之CNT其表蚊㈣,係盘石黑 1〇錄的表面分子構造,即,與苯環鍵結的電子超共輛構^ 之性為有關,且與其他材料間的霜濕性亦顯示出如石墨的 I質。即,經製造過㈣持原態(譬如粉狀)的分子表面,通 f無論在何觀_,分舰料良,就算_定條件加 以處理(譬如與乙醇共同經超音波處理時等),最多不過是可 15獲得數週程度的分散狀態即為限度。 籲 ^㈤述’此性質成為CNT在各種工學應用上的極大限 制。即,經製造後的CNT與其他材料的混成材料,譬如將 CNT與樹脂的機能性混合構造材料生產線時,於現狀 中縱或藉由CNT與其他材料之混練(kneeing)等的操作, '2G纟無界面活性劑等添加物之情況下,並不易製造出超微細 的相谷I4生優異之複合材料,而力口入添力口物時,又難逃該材 料之性質會對複合材料造成不良影響(譬如電性之性質降 =、機械性強度降低、化學性質劣化等)。此處,電性之性 質降低係譬如電阻率增加、中長期的電性性質之維持可靠 8 200815282 度降低、每一重量的電阻率增加及電磁波遮蔽性能劣化、 以及同等可罪度降低等。又,機械性強度降低係指剛性率、 破壞強度降低、以及前述二者長期性能劣化等。再者,化 學性質降低係表示抗環境的材料物性(譬如吸濕性、抗溶劑 5性、因空氣中的氧而產生的氧化)劣化。 舉其一例,為可將CNT應用作為超LSI等之高密度高機 成電子裝置的通孔配線用材料,需藉由Cmp(化學機械研磨 法(Chemical Mechanical Polishing))來截切長成於通孔内的 CNT上端。此時,為固定住CMT束叢,或進行CMP時,不 1〇讓研磨材、研磨液流入CNT束叢内而污染CNT内部(或流入 之後仍可輕易將之加以去除),需以絕緣材料等而藉由其他 物質來固定CNT束叢周圍,惟,若CNT與該絕緣材料等之 親和性不佳時,縱或使用藉由旋轉塗佈法等來塗佈業已溶 解於/谷劑之樹脂的方法,或是採用於真空環境下製造樹脂 1S狀物質之覆膜此方法,仍舊無法將該絕緣材充分地填覆於 CNT束叢之間,因此,CNT束叢周圍會有細微的體積空間, 而無法讓其他物質順利地混入CNT束叢。 針對前述問題,雖提出有數個解決對策(參照專利文獻 2),但並不充分。 2〇 又,以上僅針對碳奈米管作說明,但有關如前述之碳 奈米管的特性及限度,當其應用於使用石墨片之電子元件 零件時,亦同樣適用,而前述石墨;^具有於長度方向切 開碳奈米管之筒體所得之構造者。即,石墨片表面不易為 其他物質所濡濕,利用此性質來製作電子零件時,若欲形 9 200815282 、/、郝之構4,於该狀態下直接形成空洞等之可能性 南揚。 “口此本發明之目的在於提供一種可解決前述問題, 且當CNT與其他材料接合時,親和性獲得提高之碳奈米管 系材料及包含石墨片系材料之碳系奈米材料。本發明之進 一步其他目的及優點,可由下述說明加以明瞭。 用以解決課題之手段The invention relates to a surface modification technique for a carbon-based nanomaterial. The invention relates to a surface modification technique for a carbon-based nanomaterial. In the semiconductor integrated circuit device including a semiconductor device and a printed wiring board, in the electronic component having the properties of a conductor and a heat conductor, the so-called carbon nanoeed is used. Rice tube (CNT) technology. 10 In particular, 'CNTs have excellent chemical stability, excellent physical properties, electrical properties, and other characteristics, and are attracted by the formation of semiconductor devices, such as the control of their thickness and length. The control and the control of the spatial spiral characteristics, etc., have been carried out in various studies. In the specific application, the electromagnetic wave shielding member for electronic equipment, the cooling bump material for high-performance electronic components such as super LSI, and the wiring via structure of the semiconductor device and the components of the semiconductor device (such as electricity) Gate electrode of the crystal, source electrode, drain electrode, channel electrode, etc.). The following applications can be considered, for example, using CNTs having extremely high thermal conductivity of CNTs, the CNTs are grown on a semiconductor process substrate at a high density, and are used as a part of the conductive circuit or mounted on the process substrate. The heat transfer path of the upper electronic component (semiconductor device) and the heat dissipation path for dissipating heat generated by the heat generated by the structure (the so-called "bump structure") may be considered as follows. In one application, the high electrical conductivity is used as a through-hole wiring structure in a high-density wiring structure of a semiconductor device (semiconductor element) having an ultrafine structure. An example in which the CNT is used as a cooling bump material for a high-performance electron element (for example, see Non-Patent Document 1). As shown in Fig. 5, the cold of such a high-performance electronic component is used. " However, the bump structure can be manufactured by, for example, a coating on a substrate (aluminum nitride (AIN, aluminum, etc.)) 51 on the substrate 52 by a enamel plating or the like. Is a mounting film (such as a TiN film) and a catalytic metal film (c〇, etc.) (both 10 are combined by reference numeral 53)' followed by thermal CVD using a hydrocarbon-based gas (cjj4, 63⁄4, etc.) After the CNT 54 is grown, the conductive material (such as a metal such as C11 or A1) is adhered to the CNT portion of the CNT substrate by plating (wet treatment) or the like. In order to fabricate a €1^ bump structure, the electronic component can be heat-pressed (preferably 25 Å. (: 15 deg. 15 degrees) on the substrate to produce a highly thermally conductive electronic component. In the first aspect, an example of a wiring via structure using the CNT (see, for example, Patent Document 1 and Non-Patent Document 2) is shown in Fig. 1. As shown in Fig. 1, the through-hole structure can be manufactured by the following procedure. That is, a base layer 2 and a Cu wiring layer 3' are provided on the base, and a barrier film (Ta film) 4 for preventing the diffusion of Cu is deposited on the Cu wiring layer 3, and insulation is provided on the barrier film 4. After the film 5' is further provided with a through hole, a catalyst metal mounting film (such as a Ti film) 6 and a catalyst gold such as Co are deposited by sputtering or the like. The film (or the catalyst fine particle layer) 7 is formed by heating the CNT 8 by a thermal cVD method (thermal chemical vapor deposition method) using a hydrocarbon-based gas (CH4, QH2, etc.) or the like, and then forming an upper wiring. Fig. 6 200815282 also exemplifies a filling of the intestines 9 for fixing the CNTs 8. Patent Document i: Japanese Patent Laid-Open Publication No. _32 (No. of the patent application) Patent Document 2 (Required Patent 5) Non-Patent Document 1: Fujitsu Co., Ltd., Fujitsu Research Co., Ltd., "World Premiere! Use of Nanotubes for Semiconductor Wafers/Hybrid Substrates" (above) The original Japanese text is ·· f Shitong Co., Ltd., Fujitsu Research Institute, "The beginning of the world! Force one seeks ^10^Twenty-one y 1 〇蚤 half $ 千7 7 0 exothermic substrate 匕"", December 5, 2005, [August 18, 2006 search] 'Internet, <皿[:卿年利敝嶋如/崎8/2〇〇5/12/5^咖非非文文2 · 一瓿专卖者,r japanese journai 0f Applied Physics》 (The above Japanese text is two bottles & 16:21, 15, 1 and 10; 1/·彳·7. Today, 4th and 47th, only"), _ 2005, 44th, pl626. t ^^明内] Summary of the Invention However, although the carbon nanotube itself has excellent conductivity, semiconductor, bismuth, thermal conductivity, chemical stability, etc., the following problems are known, namely, with other materials. When the bonding property is insufficient, the electrical conductivity and thermal conductivity of the continuous smear may be greatly lowered, and problems such as interlayer adhesion and adhesion may not be obtained. Further, this problem occurs in the case where one end of the substrate is fixed and the nanotubes obtained by CVD are used for wiring 7 200815282. This problem can be solved by completely adhering the part to the peripheral layer of the cnt when manufacturing the part. However, in the case where the incompatibility of the interface between the CNT and other materials cannot be solved, there is a problem that the above-mentioned 5 closeness cannot be achieved. This is also a common problem for CNTs in all uses. In general, CNTs are produced by conventional methods (Laser Burner, :_), Chemical Vapor Deposition (CVD), HiPC (High-Voltage Carbon Monoxide • Pyrolysis (High_P Lai Carbon)) And so on. The surface molecular structure of the CNTs of the CNTs, which are obtained by the aforementioned method, is related to the nature of the electronic super-common structure of the benzene ring, and the frost between the other materials. Wetness also shows the quality of graphite, such as graphite. That is, the surface of the molecule that has been produced (4) in its original state (such as powder), regardless of the view of the _, the good material of the ship, even if it is treated under conditions (such as when supersonic processing with ethanol), most However, it is a limit that can be obtained by obtaining a degree of dispersion for several weeks. This is a great limitation of CNTs in various engineering applications. In other words, when the CNT and the other material are mixed with each other, for example, when the CNT and the resin are functionally mixed with the structural material production line, the operation is performed in the vertical direction or by kneading with other materials, '2G. In the case of no additives such as surfactants, it is not easy to produce ultra-fine composite materials with excellent phase I4, and when the force is added to the mouth, it is difficult to escape the properties of the material. Adverse effects (such as the decline in electrical properties = mechanical strength, chemical degradation, etc.). Here, the decrease in electrical properties is such as an increase in electrical resistivity and a reliable maintenance of electrical properties in the medium and long term. 8 200815282 degree reduction, increase in resistivity per weight, deterioration in electromagnetic shielding performance, and reduction in equivalent sin. Further, the decrease in mechanical strength means a decrease in rigidity rate, a breaking strength, and a deterioration in long-term performance of the above two. Further, a decrease in chemical properties indicates deterioration of material properties (e.g., hygroscopicity, solvent resistance, oxidation due to oxygen in the air) which are resistant to the environment. For example, the CNT can be used as a material for via wiring of a high-density, high-machine-made electronic device such as a super LSI, and it is necessary to cut and grow it by Cmp (Chemical Mechanical Polishing). The upper end of the CNT in the hole. At this time, in order to fix the CMT bundle, or to perform CMP, the abrasive material and the polishing liquid flow into the CNT bundle to contaminate the inside of the CNT (or can be easily removed after the inflow), and the insulating material is required. When the CNT bundle is fixed by other substances, if the affinity of the CNT to the insulating material or the like is not good, the resin which has been dissolved in the /sol can be applied by spin coating or the like. The method, or the method of manufacturing a resin 1S-like substance in a vacuum environment, is still unable to sufficiently fill the insulating material between the CNT bundles, so that there is a slight volume of space around the CNT bundle. And it is impossible to allow other substances to smoothly mix into the CNT bundle. In view of the above problems, several countermeasures have been proposed (see Patent Document 2), but they are not sufficient. 2. In addition, the above is only for the description of the carbon nanotubes, but the characteristics and limits of the carbon nanotubes as described above are also applicable when applied to electronic component parts using graphite sheets, and the aforementioned graphite; A structure obtained by cutting a cylinder of a carbon nanotube in the longitudinal direction. That is, the surface of the graphite sheet is not easily wetted by other substances, and when the electronic component is produced by this property, if it is desired to form a shape, the possibility of forming a void directly in this state is increased. The present invention aims to provide a carbon nanotube-based material which can improve the affinity when the CNT is bonded to other materials, and a carbon-based nanomaterial including a graphite sheet-based material. Further objects and advantages will be apparent from the following description.
制生依本發明一態樣,提供一種表面改質碳系奈米材料之 衣I方去,其係表面經改質且由碳系奈米管系材料及石墨 y系材料之至少—者組成之碳系奈米材料之製造方法,該 製造方法係對於由碳系奈米管系材料及石墨片系材料之至 J 一者所組成的碳系奈米材料,進行包含下述之程序,即: 照射真空紫外線;及 提供可藉由與該真空紫外線之組合,將前述.奈米 材料之表面改質的物質。 ▲依本發明態樣,可獲致與其他材料接合時,親和把 焉之新穎的碳系奈米材料。 20 依本發明另一態樣,可提供一種表面改質石炭系奈另 枓,该表面改質碳“料料储由對⑽、奈米材料^ 墨片系材料之至少—者所組成的碳系奈米材料,進如 以下程序之方法而製成者,即: 照射真空紫外線;及 提供可藉由無真线祕之組合,將前述礙系; 材料的表面改質之物質。 10 200815282 2發„樣,與其㈣料接合· 的反糸奈米材料,可適合用於電子 之新穎 件等的所有f子零件上。 〜轉等、電子零 5 質的=!!上述"個態樣,可將前述碳系奈米材料之^ 貝的物質,宜為可藉由真空料線加=之表面改 團等的化學活性物種者,又,前述参面:14化而產生原子 奈米材料宜為藉由CVD法而製得者:又可加以改質之碳系 改質之碳系奈米材料宜為長成於基板上者 10 於由導電性物質、絕緣性物f、親水性物質、親自 及具有特定基團的物質所組成的群中之H 物貝 日守’相較於前述表面經改質前,表面 ^相接觸 親和性係提高,又,前述原子團等的化風=米材料的 15 f給電子性基團之原子團等的化學活性物種,以及7 子性基團之原刊等的化學活性物種之至少 ^及電 可將财述碳系奈米材料的表面改質之物質,宜包人右:, 於由氧、胺類、鹵烷類、醇類、醚類及 二選自 成之群中的至少-個物質者,又,可將;:述/二物所1 且 的表面改質之物質係經麵質力:,:=, 20 :;r述真空紫~奈 大依本發明其他態樣,可提供包含有前述表面改質 不未材料㈣成之電子零件,特別是提供通孔、散熱二、 ::;或導電性片材、電磁波遮蔽材用片材、用以製: 專片材之紐材料,⑽包含麵絲面改質碳系奈;; 11 200815282 材料而構成之電子裝置。 依前述二個本發明態樣,可實現活用碳系奈米材料之 優越特性的電子機器及電子零件等。 發明之功效 5According to one aspect of the present invention, a surface-modified carbon-based nanomaterial is provided, and the surface thereof is modified and composed of at least a carbon-based nano tube material and a graphite y-based material. The method for producing a carbon-based nanomaterial, wherein the carbon-based nanomaterial composed of a carbon-based nanotube material and a graphite sheet-based material comprises the following program, that is, : irradiating a vacuum ultraviolet ray; and providing a substance capable of modifying the surface of the aforementioned nanomaterial by a combination with the vacuum ultraviolet ray. ▲ According to the aspect of the invention, it is possible to obtain a novel carbon-based nanomaterial which is affinity-friendly when it is joined to other materials. According to another aspect of the present invention, there is provided a surface-modified carboniferous carbonaceous carbon which is composed of carbon composed of at least (10), a nanomaterial, and an ink sheet material. A nanomaterial is prepared by the method of the following procedure, namely: irradiating a vacuum ultraviolet ray; and providing a substance capable of modifying the surface of the material by a combination of non-true lines. 10 200815282 2 The anti-twist nanomaterial that is bonded to the (four) material can be suitably used for all f sub-components of electronic novels and the like. 〜转等, 电子零五质=!! The above-mentioned "the same kind, the material of the carbon-based nanomaterial can be the chemical that can be changed by the surface of the vacuum line plus = For active species, the above-mentioned reference surface: 14 atomization and atomic nano-materials should be prepared by CVD method: carbon-based modified nano-materials which can be modified and modified are suitable for growth. On the substrate, the surface of the substrate is composed of a conductive material, an insulating material f, a hydrophilic substance, a substance consisting of a substance having a specific group, and the surface of the surface is modified before the surface is modified. The chemical affinity species such as the chemically active species such as the atomic group of the 15 f electron-donating group of the rice material, and the chemically active species such as the original publication of the 7-substance group, etc. At least ^ and electricity can be used to modify the surface of the carbon-based nanomaterials, it should be included in the right:, by oxygen, amines, halogens, alcohols, ethers and two selected from the group At least one substance, again, can be;; the material of the surface modification of the two parts is the surface quality:,:= , 20 :; r described vacuum purple ~ Naida according to other aspects of the invention, can provide electronic components including the aforementioned surface modification materials (four) into, in particular, provide through holes, heat dissipation II, ::; or conductivity Sheet, electromagnetic wave shielding material sheet, used to make: special sheet material, (10) including surface silk surface modified carbon system;; 11 200815282 material composed of electronic devices. According to the above two aspects of the present invention, an electronic device, an electronic component, and the like which utilize the superior characteristics of the carbon-based nanomaterial can be realized. Effect of invention 5
10 1510 15
20 依本發明,可獲致與其他材料接合時親和性提高之新 穎的碳系奈米材料。此種材料可適用於電子機器及電仏 件等。 圖式簡單說明 第1圖係利用CNT之配線通孔構造的概略橫戴面圖。 第2圖係顯示用以照射本發明之vuv,且供給特定物柄 之裝置其主要部分的概略圖。 貝 第3圖係顯示用以照射本發明之vuv,且供給特定物柄 之裝置其主要部分的其他概略圖。 1 第4圖係概略地顯示將本發明之碳系奈米管系材津 用於通孔上之半導體積體電路裝置的截面圖。 珥#- 第5圖係顯示包含有高熱傳導性凸塊之電子元件其 造概要例的概略圖,該電子元件係將碳系奈米管系材料痛 用在高難電子元件的冷卻用凸塊材料±者。 、肩 第6圖係-概略圖’顯示將本發明之後系奈米 應用在電磁波遮蔽材時,該製法例之概要。 ’、水 第7圖係未處理之石墨片的概略截面圖。 第8圖係本發明之經處理後的石墨片之概略戴面圖 C實施方式】 間。 較佳實施例之詳細說明 12 200815282 5 10 15 20 以下’依圖式說明本發明之實施態樣。惟,本發明之 技術性範圍並不限於下述之實施態樣,可擴展至申請專利 範圍所載之翻及其鱗物。又,如前述,本發日^碳奈 米管系材料’可知亦義具洲奈⑽造,且有相同的濡 濕性等問題之石墨片系材料。因此,將碳奈米管系材料: 石墨片系材料併稱為「碳系奈米材料」。 本赉明之表面改質碳糸奈米材料,可藉由包含下述矛。 序之方法而製得,即,對碳系奈米材料照射真空紫外^ (方VUV · Vacmim Ultra vi〇let rays),且藉由該碳系奈米材料 ^νυν之組合,提供可將該碳系奈米材料之表面改質的物 貝(以下亦將「藉由該石炭系奈米材料與νυν之組合,而可將 碳系奈米材料之表面改質的物質」稱為「特定物質」)。、According to the present invention, a novel carbon-based nanomaterial which has an improved affinity when joined to other materials can be obtained. This material can be applied to electronic equipment and electric parts. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a through-hole structure of a CNT. Fig. 2 is a schematic view showing a main portion of a device for irradiating a vuv of the present invention and supplying a specific object handle. Fig. 3 is a schematic view showing the main part of a device for illuminating the vuv of the present invention and supplying a specific object handle. 1 is a cross-sectional view schematically showing a semiconductor integrated circuit device in which a carbon-based nanotube structure of the present invention is applied to a via hole.珥#- Fig. 5 is a schematic view showing a schematic example of an electronic component including a high thermal conductivity bump which is used for cooling a bump of a high-hard electronic component. Material ±. , shoulder Fig. 6 is a schematic view showing an outline of the manufacturing method when the present invention is applied to an electromagnetic wave shielding material. 'Water' Figure 7 is a schematic cross-sectional view of an untreated graphite sheet. Figure 8 is a schematic representation of a processed graphite sheet of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT 12 200815282 5 10 15 20 The following is a description of the embodiments of the present invention. However, the technical scope of the present invention is not limited to the embodiments described below, and can be extended to the scales and scales contained in the patent application. Further, as described above, the present invention is a graphite sheet material which is made of the same type of moisture and has the same problem of moisture resistance. Therefore, the carbon nanotube-based material: the graphite sheet-based material is referred to as a "carbon-based nanomaterial". The surface modified carbon nanomaterial of the present invention can be obtained by including the following spear. By the method of sequencing, that is, the carbon-based nano material is irradiated with a vacuum ultraviolet (VUV · Vacmim Ultra vi〇let rays), and by the combination of the carbon-based nano material ^νυν, the carbon can be provided A material modified by the surface of a nanomaterial (hereinafter, a substance that can modify the surface of a carbon-based nanomaterial by the combination of the carbonaceous nanomaterial and νυν) is called a "specific substance". ). ,
一之所以可藉由對碳系奈米材料照射V U V並供給前 定物貝,而將該碳系奈米材料之表面改复 ;L 在於該物質可藉由權而加以活化,產生原;原團= 活性物種,且該化學性物種會對碳系奈米材料表面起作用二 其機制可推測譬如下述⑵而婦論之對錯 之本質並無關)。即,接受vuv照射,且為懸浮在奈乎= 子及石罢U IT 、木管为 W片附近狀態的特定物質其鍵結斷裂, =性氧、胺基根原子團、垸基原子團、c 2化學性物種。由於前述原子團不安定:子: 匕會迅速地舆附近的奈米管及石墨片上反應性:因 部分(五提 门的缺陷 讀分,通常稱為懸鍵的不安定鍵結㈣部 /疋石墨片端部上的化學活性部分鍵結,形成共俨 13 200815282 鍵。抑或,未直接地化學鍵結於奈米管及石墨片上,而是 與原子團等的化學活性物種群進行反應並再次加以鍵結 ^成桃點更高(低揮發性)的生成物,域生成物吸附於 示米管分子及石墨片的表面上。 5 除前述,可能尚存有其他機制,譬如該物質或其 中-部分吸附於碳系奈米材料的表面上,並藉由爾之作. 用,而不經由原子圈等的|風 ^ 、 寺的化予^舌性物種就對碳系奈米材料 表面起作用等。進而,前述作 3 7 + 乍用了此疋以化學鍵結為主體, 但亦可能存有物理性吸卩望 、寺。惟,前述機制及作用形態與 10 本發明之本質並無關。 :否為本叙明中之特定物質,可藉 以 =意義而編奈米材料的表面改 認。又, 將特定物質與碳系奈米材料接觸時,當 15 =米材料的表面亦產生改質時,可知該表面改質之程 具體而言’此種表面改質可藉由因表面張力的變化、 對於特定溶媒的濡溼性纟參彳 系奈米材㈣面上、蚊基(譬如極性基)導入破 物質之吸附量的變化等=材料間之接著性的變化、特定 表面改質,或該改質相較=某種意義將碳系奈米材料的 式而加以確認。此種改質t使用vuv時係有加以改善方 提高。 、之結果,與其他物質間的親和性 抑或,如前述,由於可藉由vuv而產生原子團等的化 學活性物種之物質多相卷 Μ 、 句於特定物質,故亦可不依從前述 14 200815282 具體的變化,而將可藉由νυν產生原子圈等的化學活性物 種之物質考慮為特定物質。其原因應係若產生原子團等的 化學活性物種’理論上來說,碳“米_的表面上也該 產生有某些變化。 . 5 此種原子團等的化學活性物種,宜包含有給電子性基 團其原子團等的化學活性物種,以及吸電子性基團其原子 - 團等的化學活性物種之至少一者。如前述之原子團等的化 • 學活性物種參與時,極性基將導入碳系奈米材料上,可提 高與具有極性的物質間的親和性。 10 再者,本發明中,「表面」係指所謂表面改質中之表面, 不僅石反系奈米材料的最外面,亦相當於凹陷之表面及内部 表面,惟,與本發明之關係上,具體來說,碳系奈米材料 的何處經改質並不重要。 有關本發明中之特定物質並無特別限制,可由任意物 5貝中廷取。具體而言,宜依欲進行何種表面改質而加以選 • f。譬如提高對於極性溶媒之親和性時,宜為可將極性基 導入石反系奈米材料表面之物質。提高對於具特定結構之溶 料2和性時,爲可將㈣定的化學構造、或接近該者 ,20 2化予構造,導入碳系奈米材料表面之物質。亦可藉由調 ”火〖生之基團與親油性之基團的種類以及導入量,而調 即石反系奈米材料的親水性及親油性的程度。 更之,宜包含有選自於由氧、胺類、鹵烧類、 =類、鱗類及由該等之混合物所組成之群中的至少一個物 、“言,使用前述物質,係可提高碳系奈米材料表 15 200815282 面的才系^生。 舲疋物質的供給,係為了讓特定物質與碳系奈米材料 俯1而進行4供給係以氣相進行。以蒸氣來供給特定 5 =貝了於系壓且室溫下時,因亦有蒸氣壓較低或不易蒸 I之h形,故,宜如後述,有時可採用減壓方式,或藉由 /述之N J*生物貝加以稀釋而伴載於該惰性物質方式,加熱 特定物質方式等。 准备疋物質本身並不一定非得為蒸氣。因此,亦可 猎由嘴霧而以特杨質懸浮在其他氣體中之狀態加以供 、口 /此日t ’有可能懸浮的特定物質係直接以餘而有助於 石反糸奈米材料的改質。 碳系奈米材料之改質的特性及程度,係受到所供給的 特定物質種類之影響。譬如,讓經基較多地導入碳系奈米 材料的表面時,可改善對於乙醇、乙二醇(二元醇系)丙三醇 15 (三元醇系)等的醇系溶媒之親和性。又,導入胺基,或吸附 胺基或是含有胺基之化合物時,具有可提高對於具有二甲 基甲驗胺(DME)等的胺基系官能基之溶媒的親和性此一傾 向。經實驗,獲致如下結果,即,充滿三乙胺或氨與乂之 混合氣的Si基板上的奈米管,係藉由VUV照射而導入胺基 20 等。 同樣地,導入硫醇(-SH)基或包含該硫醇基之多數官能 基或者是化合物,抑或加以吸附時,對於各個溶媒之親和 性係加以提高。進而,譬如同時導入胺基及羥基時,與 TMAH(氫氧化四甲胺(tetramethyl ammonmm hydroxido ;抗 16 200815282 飿劑等的顯像劑))間的親和性大幅提高。 紫外線可分類為波長超過315nm且在400nm以下範圍 的UV-A、波長超過280nm且在315nm以下範圍的υν-β、波 長超過200nm且在280nm以下範圍的UV-C、及波長在丨如㈤ 5至200nm範圍的νυν,本發明中之碳系奈米材料相對於一 般表面之安定性(化學安定性等)高,且在Uv_A〜uv_c的紫 外線照射下並無法充分地表面改質,抑或修飾反應速度極 k,可發現在VUV與前述特定物質相組合時,獲致前述功 效0 10 ㈣義vuv的手段並無制㈣。可贿宜為窄寬 幅且中心波長為17211111的又6準分子^^^燈。一般通例上,以 表現出160nm〜200nm程度的波長分布者,即封〈Xe之準分 子UV燈為佳,但並不限於此例。χ,有機化合物的鍵解離 能係與VUV的波長有直接_,因此欲排除特定的鍵解離 15時’亦可依目的而將VUV的使用波長範圍限制在一狹窄範 圍内。 有關νυν的輸出亦無限制,可使用市面販售的數十 mW/cm私度的輸出者。又,只要可產生的裝置(準分 子VUV燈等)之冷卻及配置上無問題,使収高輸出的農 2〇置,或是將VUV燈相靠近而並排多數_,增加實際上每一 面的照射量,亦可能與生產性提高有相關連。 又νυν係如其名稱所示,一般係在真空中或減壓下 加以使用,惟,本發明並不限於此,亦可於常壓下使用。 Ρ本毛月中之VUV照射,係對減壓或常壓環境中的碳系 17 200815282 5 • 10 奈米材料進行。 由控制VUV與特定物質間的組合作用之層面,以及擴 大VUV與碳系奈米材料間之距離此實用性上的意義論之, 大多時候控制包圍碳系奈米材料之環境中的特定物質濃度 係可發揮功效。此係由於譬如含有氧20%體積的空氣中, 為了讓VUV在1cm以内時幾乎全都加以吸收,特定物質多 為消光係數較大,因而多數時候宜藉由某些手段來降低特 定物質的濃度(或蒸氣壓、分壓等亦可)之故。前述動作雖可 藉由調整環境的減壓程度加以進行,但使用縱或經照射 VUV,仍不會將碳系奈米材料的表面改質之物質,即惰性 物質來加以稀釋的特定物質亦為較理想的場合也多有。具 體言之,在常壓狀態下,宜將特定物質稀釋在0.001〜50體 積%之間,而以0.01〜10體積%之間更佳。又,有關該惰性 物質並無特別限制,由於本發明之環境係氣相,一般言之, 15 氣體物質或揮發性之物質係為適切。氖、氬等的惰性氣體 • 及氮氣可為較佳者而加以例示。 有關照射對象,即碳系奈米材料與νυν照射源間的距 離,由於νυν易加以吸收,因此以較小範圍者較為理想。 雖然存在於碳系奈米材料及νυν照射源間的物質之種類及 . 20 濃度(或蒸氣壓抑或常壓)也有些關係,但一般而言,此距離 以譬如O.lnm〜100nm為佳。進而言之,更多時候係以0.2nm 至數cm程度為佳。 VUV照射的方式並無特別限制。特定物質的供給亦可 非為同時進行。可例舉下述方法,即,連續地將特定物質 18 200815282 供給至碳系奈米材料,並連續地進行νυν照射之方法,或 間斷地將特定物質供給至碳系奈米材料,並配合該供給時 間而間斷地進行νυν照射之方法,抑或間斷地將特定物質 供給至碳系奈米材料,並配合該供給時間且在之後某段時 5 .間再間斷地進行供給,而間斷地照射νυν之方法。 目前尚不明瞭碳系奈米材料的表面改質是否僅有直接 照射到νυν之處才會產生。譬如所產生的原子團等的化學 活性物種之壽命長時,也可推測未直接照射到VUV處也有 產生表面改質。因此,對石炭系奈米材料整體照射νυν,其 10 結果,若表面加以改質,則與本發明之意旨一致,一般上, 宜盡量讓各個碳系奈米材料可直接照射到VUV。由此意味 上,將碳系奈米材料豎起於基板上,且以叢聚在排列方向 之狀悲,或疋分散於基板上之狀態,抑或平行地配置於基 板上之狀態為佳,但並不限於此。 15 再者,應用習知之平版印刷技術,並在覆蓋住碳系奈 米管料表面中之-部分的狀態下,藉由進行前述處理而限 定表面上的改質處,進而,亦可反覆進行前述操作數次, 依場所而進行不同的改質。此方式適用於製作凸塊時,對 基板上不同的位置進行不同的處理之場合等。 20 本毛月中之「碳系奈米材料」,係由碳系奈米管系材料 與石墨片系材料中至少任一者所組成。即,包含僅由任〆 者組成之悲樣,亦包含有二者組成之態樣。 此石土片系材料」,係指石墨片或石墨片經某種意思 加以修飾過後之材料。石墨片係單稱為Graphene (石墨薄片) 19 200815282 5The reason why the surface of the carbon-based nanomaterial can be modified by irradiating the carbon-based nanomaterial with VUV and supplying the precursor, and L is that the substance can be activated by the weight to generate the original; Group = active species, and the chemical species will act on the surface of carbon-based nanomaterials. The mechanism can be presumed to be as follows (2) and the nature of the right and wrong of women is irrelevant). That is, the vuv irradiation is received, and the bond is broken in a specific substance suspended in the vicinity of the W and the U tube, and the wood tube is in the vicinity of the W piece, = oxygen, amine radical, sulfonium atom, c 2 chemistry Sexual species. Because the aforementioned atomic group is not stable: Sub: 匕 will quickly 舆 near the nanotubes and graphite sheet on the reactivity: due to the part of the five-door defect reading, usually called the dangling bond unstable (four) / 疋 graphite The chemically active moiety on the end of the sheet is bonded to form a conjugate 13 200815282. Alternatively, it is not directly chemically bonded to the nanotube and the graphite sheet, but is reacted with a chemical active species such as an atomic group and bonded again. A higher (low volatility) product of peach formation, the domain product is adsorbed on the surface of the meter tube molecule and the graphite sheet. 5 In addition to the above, there may be other mechanisms, such as the substance or part-adsorption On the surface of carbon-based nanomaterials, and by using it, without the use of atomic rings, etc., the formation of the tongue-like species acts on the surface of the carbon-based nanomaterial. The above-mentioned 3 7 + 乍 uses this 疋 to use chemical bonding as the main body, but there may be physical absorption and observation, and the above-mentioned mechanism and mode of action are not related to the essence of the present invention. Specific substances in the narrative, The surface of the nanomaterial can be modified by the meaning of =. Moreover, when the specific substance is in contact with the carbon-based nano-material, when the surface of the 15 = meter material is also modified, it is known that the surface modification is specific. 』 'This kind of surface modification can be changed by the change of surface tension, the hygroscopicity of the specific solvent, the change of the amount of adsorption of the mosquito-based (such as polar group) into the broken substance, etc. The change in the adhesion between the materials, the specific surface modification, or the modification is confirmed by the formula of the carbon-based nanomaterial in a certain sense. Such a modification t is improved by using vuv. As a result, the affinity with other substances, as described above, may be due to the fact that a substance of a chemically active species such as an atomic group which can be generated by a vuv is a multi-phased or a specific substance, and may not comply with the above-mentioned 14 200815282. a change, and a substance which can generate a chemically active species such as an atomic ring by νυν is considered as a specific substance. The reason is that if a chemically active species such as an atomic group is generated, theoretically, the surface of the carbon "m" There are some variations in the production. 5 Chemically active species such as such an atomic group, preferably containing a chemically active species such as an electron-donating group such as an atomic group thereof, and at least an electron-active group such as an atom-group thereof When a chemically active species such as an atomic group is involved, a polar group is introduced into a carbon-based nanomaterial, and affinity with a substance having polarity can be improved. Further, in the present invention, "surface "refers to the surface in the so-called surface modification, not only the outermost surface of the stone inverse nanomaterial, but also the surface and inner surface of the depression, but, in connection with the present invention, specifically, the carbon-based nanomaterial It is not important where the modification is carried out. The specific substance in the present invention is not particularly limited and may be taken from any of the materials. Specifically, it is preferable to choose which type of surface modification to perform. For example, when the affinity for a polar solvent is increased, it is preferably a substance which can introduce a polar group to the surface of the stone reaction material. When the solubility of the solvent 2 having a specific structure is improved, it is a chemical structure which can be defined by (4), or a material which is adjacent to the structure and which is introduced into the surface of the carbon-based nanomaterial. It is also possible to adjust the degree of hydrophilicity and lipophilicity of the stone-reversing nano-material by adjusting the type of the group of the raw group and the lipophilic group and the amount of introduction. At least one of a group consisting of oxygen, an amine, a halogenated type, a class, a scale, and a mixture of the foregoing, "said, using the foregoing substance, the carbon-based nanomaterial can be improved. Table 15 200815282 The talent of the face is born. The supply of the ruthenium material is carried out in the vapor phase in order to allow the specific substance to collide with the carbon-based nanomaterial. When the steam is supplied to the specific 5 = at room temperature and at room temperature, since there is also a h shape in which the vapor pressure is low or it is difficult to evaporate I, it is preferable to use a decompression method as described later or by / The NJ* biological shell is diluted with the inert substance method, the specific substance method is heated, and the like. The preparation of the cockroach material itself does not necessarily have to be steam. Therefore, it is also possible to hunt by the mist of the mouth and suspend it in other gases in the state of the mouth, and the specific substance that may be suspended in the mouth/this day is directly used to contribute to the stone-reversing nanomaterial. Upgraded. The nature and extent of the modification of carbon-based nanomaterials are influenced by the type of specific substance supplied. For example, when the surface of the carbon-based nanomaterial is introduced into the surface of the carbon-based nanomaterial, the affinity for an alcohol-based solvent such as ethanol or ethylene glycol (diol) glycerol 15 (triol) can be improved. . Further, when an amine group is introduced or an amine group or an amine group-containing compound is adsorbed, the affinity for the solvent having an amine group functional group such as dimethylamine (DME) or the like can be improved. According to the experiment, the nanotubes on the Si substrate filled with triethylamine or a mixture of ammonia and hydrazine were introduced into the amine group 20 by VUV irradiation. Similarly, when a thiol (-SH) group or a plurality of functional groups containing the thiol group or a compound is introduced or adsorbed, the affinity for each solvent is improved. Further, when an amine group and a hydroxyl group are simultaneously introduced, for example, affinity with TMAH (tetramethylammonamine hydroxido (an imaging agent such as tetramethylammonamine hydroxido) is greatly improved). The ultraviolet rays can be classified into UV-A having a wavelength exceeding 315 nm and in a range of 400 nm or less, υν-β having a wavelength exceeding 280 nm and in a range of 315 nm or less, UV-C having a wavelength exceeding 200 nm and in a range of 280 nm or less, and a wavelength such as (5) 5 Νυν in the range of 200 nm, the carbon-based nanomaterial of the present invention has high stability (chemical stability, etc.) with respect to a general surface, and cannot be sufficiently surface-modified or modified by UV irradiation of Uv_A to uv_c. At a speed of k, it can be found that when VUV is combined with the above-mentioned specific substances, the means for obtaining the aforementioned effect of 0 10 (four) sense vuv is not produced (4). It is recommended that the bribe should be a narrow and wide-width 6-molecular ^^^ lamp with a central wavelength of 17211111. In general, it is preferable to display a wavelength distribution of about 160 nm to 200 nm, that is, a quasi-molecular UV lamp of <Xe, but it is not limited to this example. χ, the bond dissociation energy of the organic compound is directly related to the wavelength of the VUV, so that the specific wavelength dissociation 15 is excluded. The VUV wavelength range can also be limited to a narrow range depending on the purpose. There is no limit to the output of νυν, and you can use the tens of mW/cm private exporters sold in the market. In addition, as long as there is no problem in the cooling and arrangement of the devices (excimer VUV lamps, etc.) that can be generated, the output of the output is increased, or the VUV lamps are placed close to each other and the majority is _, increasing the actual side of each side. The amount of exposure may also be related to increased productivity. Further, νυν is used as a name, and is generally used in a vacuum or under reduced pressure. However, the present invention is not limited thereto and can be used under normal pressure. The VUV exposure in the 毛本毛月 is carried out on carbonaceous materials in a decompressed or atmospheric environment 17 200815282 5 • 10 nanometer material. By controlling the combination of VUV and specific substances, and expanding the distance between VUV and carbon-based nanomaterials, this practical significance is to control the concentration of specific substances in the environment surrounding carbon-based nanomaterials. The system can work. This is because, for example, in air containing 20% by volume of oxygen, in order to allow VUV to absorb almost all within 1 cm, the specific substance is mostly a large extinction coefficient, so most of the time it is preferable to reduce the concentration of a specific substance by some means ( Or vapor pressure, partial pressure, etc.). Although the above operation can be carried out by adjusting the degree of decompression of the environment, a specific substance which is diluted with a vertical or irradiated VUV and which does not modify the surface of the carbon-based nanomaterial, that is, an inert substance, is also used. There are many more ideal occasions. Specifically, in a normal pressure state, it is preferred to dilute a specific substance between 0.001 and 50% by volume, more preferably between 0.01 and 10% by volume. Further, the inert substance is not particularly limited, and since the environment of the present invention is a gas phase, in general, 15 gas substances or volatile substances are suitable. An inert gas such as helium, argon or the like and nitrogen may be exemplified as preferred. Regarding the object to be irradiated, that is, the distance between the carbon-based nanomaterial and the νυν irradiation source is preferable because it is easily absorbed by νυν. Although there are some differences between the type of the carbon-based nanomaterial and the νυν source, and the concentration (or vapor pressure or atmospheric pressure), in general, the distance is preferably from 0.1 nm to 100 nm. In other words, more often it is 0.2 nm to several cm. The manner of VUV irradiation is not particularly limited. The supply of specific substances may not be carried out simultaneously. The method of continuously supplying the specific substance 18 200815282 to the carbon-based nanomaterial and continuously performing νυν irradiation, or intermittently supplying the specific substance to the carbon-based nanomaterial, may be exemplified. The supply time is intermittently performed by νυν irradiation, or the specific substance is intermittently supplied to the carbon-based nanomaterial, and the supply time is matched, and the supply is intermittently performed at a later time, and the νυν is intermittently irradiated. The method. It is not known whether the surface modification of carbon-based nanomaterials will only occur when directly irradiated to νυν. For example, when the chemically active species such as the generated atomic group have a long life, it is presumed that surface modification is not caused by direct irradiation to the VUV. Therefore, the entire carboniferous nanomaterial is irradiated with νυν, and as a result of 10, if the surface is modified, it is in accordance with the gist of the present invention. In general, it is preferable to directly irradiate each of the carbon-based nanomaterials to VUV. Therefore, it is preferable that the carbon-based nanomaterial is erected on the substrate, and is in a state of being clustered in the alignment direction, or being dispersed on the substrate, or being disposed in parallel on the substrate. Not limited to this. 15 Furthermore, the lithographic technique of the prior art is applied, and in the state of covering the portion of the surface of the carbon-based nanotube material, the modification on the surface is defined by performing the aforementioned treatment, and further, it may be repeated. The foregoing operations are performed several times, depending on the location. This method is suitable for occasions where different positions on the substrate are handled differently when bumps are formed. 20 The carbon-based nanomaterial in the month of the month is composed of at least one of a carbon-based nanotube material and a graphite sheet material. That is to say, it includes a sadness composed of only the incumbent, and also includes the composition of the two. This stone-soil material refers to a material in which a graphite sheet or a graphite sheet is modified by a certain meaning. Graphite sheet is called Graphene (graphite sheet) 19 200815282 5
10 1510 15
20 或稱為Graphene Nano-Ribbon之物質,典型上係具有奈米級 尺度的厚度(譬如〇·3ηηι〜數百nm) ’但依工業上的利用領 域’亦有利用更大尺度者。石墨片為片狀,碳位在蜂巢形 狀的各六角形之頂點,由單層或多數層構成,亦可捲起為 筒狀。若捲起且接和捲曲端,即為奈米管之構造。石墨片 可以任何一種方法製得。最簡單的方法,是將石墨片劈開 之方法’但依CVD等與碳系奈米管相同的手法,亦可生成。. 石墨片系材料,特別是石墨片,在每單位量較高的表 面牙貝、導電性、導電性中的各向異性等點上,具獨特之性 貝石墨片系材料若層數過大,則接近石墨構造,石墨片 上特徵性的各向異性減小。一般而言,厚度方向之層數為1 〜10層程度者,多稱為石墨片。相對於厚度之長度及寬度 的大小並無特別限制,可依用途而適當地選擇,一般上, 分別為0.3nm〜數百nm之範圍。 ,妷糸奈米管系材料」係指CNT或CNT經某些意 加以修飾過後之材料。典型上係具有奈米級尺度的截面( 如戴面直徑為〇.3nm〜2Gnm)之^奈米管之CNT。有關 長度可例不較佳者為數數十疆,但並無特別限专 、CNT有採取可滿足用以顯示金屬性質的條件之公塊 k以及絲可滿足用㈣科導體的(半金屬的)性質條 之凸塊構&作為本發明之Cnt,可使用顯示出金屬性 者及顯示出半導體性質者之任—者。又,有關石墨片 經修飾者係指顯示出金屬喊半金屬的性質。 本务明中之「石炭系奈米管系材料」亦包含有下塊所 20 200815282 豌豆莢(peapod)構造的奈米管,即,整體性地顯示出譬如内 包含有金屬之富勒烯(fullerene)等的金屬性質,且與奈米管 不同的其他奈米構造體堆聚於CNT内。即,前述中的「修 飾」亦包含此種態樣。 5 藉由使用包含有如前述之其他奈米構造體之豌豆莢構 造的奈米管,可增強譬如通孔的電性傳導特性或機械性強 度。譬如,含有内包含金屬之富勒烯的cNT,所内包的金 屬其電荷出現在富勒烯外侧,進而出現在奈米管外侧,此 係由第一原理計算得知,可藉此提高通孔的電性傳導特性。 10 譬如内包含金屬之富勒烯,此種整體性地顯示出金屬 特性,且與奈米管為不同的其他構造體或分子或是原子, 亦可不存於奈米管内,而存於構成一個通孔的鄰接之奈米 管間。又,在内部含有金屬富勒烯的相鄰接之奈米管間, 亦可配置與前述奈米管為不同的其他構造體或分子或是原 子。如此,CNT經修飾之態樣,亦屬本發明中之「破系奈 米管糸材料」。 ” CNT等碳系奈米管純料之形成,以㈣使用電弧放 電及雷射燒料’目前則常制電社Vd(·化學氣相沈 積法㈣CVD。由於CVD之軸方法係可直接於基板上形 如成奈米管’故期待可將之應用在積體電路的製造上。當然, 本發明所使用的CNTi製造方法並無限制。 田、 本發明之碳系奈米管系材料,多數場合宜如前述,終 、材料長成於基板二 石厌糸奈米管系材料長成於基板上此事本身非為本發明之必 21 200815282 要條件,惟,當碳系奈米官系材料長成於基板上時,如前 述,易於直接受到VUV的照射,且與基板間的密著性良好, 故多為較佳態樣。 藉由CVD製造本發明之碳系奈米管系材料時,用以形 成該基板的材料並無特別限制,可適宜地選用習知之材 料,欲獲致導電性時,宜選擇使用導電性者,而欲獲致熱 傳導性時,宜選擇使用熱傳導性良好者。 10 15 20 本發明中,對於用以對碳系奈米管系材料照射vuv, 並供給特定物質之裝置並無特別限制。可例舉譬如具有第2 圖、第3圖所示之構造的裝置。第2圖中,於vuv源、21下部, 設有特定物質經惰性物質稀釋後之氣體22的供給管路^、 特定物質的吹出口 24。卿源21係藉由冷卻用媒體25而加 以冷卻。X ’於吹出口24的下部,具有縱向排列之CNT束 26的基板27,係由圖面的左方朝右方移動。第3圖中,^卻 媒體取代為水冷管31,讀基板27係在則辕物質稀釋特 定物質後之氣體22其供給管路23中加以移動之點外,其餘 皆與第2圖相同。再者’縱向排列之咖束^,可利用譬如 長成於通孔中的CNT束而加以實現。第2、3圖巾以實線表 示的箭頭’係表示以惰性物質稀釋特定㈣後之氣:徽 冷卻用媒體25的流動,虛線的箭頭係表示vuv的昭射。 依本發明,可獲致與其他的材料接合時親和提1之 新顆的碳系奈米材料。此種材料適合使用於電子交件2 本發明之「親和性提高」,係表 =。 具他物質接觸時的 表面張力k局、職性提高、接著性提高、吸附量增大、 22 200815282 渗^與其他物質之層間的異物(水分等)、空洞(微小空間)減 ^等意思。此時之「其他物質」,宜為選自於由導電性物質、 絕緣性物質、親水性物質、親油性物質及具有特定基團的 物質所組成的群中之至少一個物質。使用碳系奈米材料作 5 4電子裝4等的料時,可期彳後高對料肢用的直他 構件之電性連接' 熱連接、機械性連接、溶媒及接著劑之 >需濕性等,可避免長期使用所產生的剝離、斷線等不良情 • 形。又,經由本發明及說明書之記載,「特定之基團」、「特 定之物質」、「特定之構造」、「特定之溶媒」、「特定之鍵結」 10及「特定之材料」中的「特定之」,並非表示是固定的決定 之某物,而係表示可依實用上之需求而任意決定者。 此種導電性物質,-般可例舉以使用於電子配線部上 的銅、鋁、與其他以金屬為首的電性傳導性物質,又,作 為絕緣性物質,一般可例舉s〇G、TE〇s(四乙氧基矽烷)、 15聚醯亞胺樹脂等之任意的半導體密封用絕緣用樹脂,或最 • 近多加使用之包含有微孔或未包含微孔,即所謂「Low-K 樹脂」類(NCS、SiLK、MSQ等)(多含有si元素),或是PFA、 FEP、鐵氟龍(註冊商標)等的氟系樹脂等,即,適合用於固 定CNT束之電性絕緣性材料,又,親水性物質一般可例舉 20如水、乙醇、曱醇、苯酚、二噚烧類、乙二醇、二甘醇、 三甘醇、丙三醇等的醇系溶媒等,再者,親油性物質可例 舉如石油醚、正己烷、環己烷等的石蠟系溶媒,或苯、曱 苯、一曱苯、曱酚等的芳族系溶媒,或是THF(四氫呋喃)、 DMF(—曱基甲醯胺)、DMs〇(二曱亞石風)、二甲基乙醯胺、 23 200815282 或二乙基酮、MIBK(甲基異丁酮)等的酮,以及包含有正甲 基砒喀烷酮、二氯乙烷、二氯乙烷、嘧啶等的異質元素(C、 0、Η以外的元素)之極性溶媒。又,具特定基團之物質,基 本上,只要是較多地含有前述絕緣性物質、親水性物質、 5 親油性物質之官能基的物質(宜為低黏度之氣體或液體),則 可為任何一者,典型例可例舉如具有-OH、-COOH、 COOR、-NH2、-NR2 (R為月旨族、芳族烷基或其衍生物)、 -CO-、-C=0、亞胺基鍵結及醚鍵結中至少一者以上之物 質,即,醇及苯酚、羧酸、胺類、酮類及苯酮類。 10 本發明之碳系奈米材料,可依需求而使用在電氣製 品、電子製品、機械品等,可使用碳系奈米材料或可加以 使用的何種用途上,而有鑒於碳系奈米材料的優越電性特 性及熱特性,特別適合應用在會產生電磁波之醫療用、航 太用或攜帶式的電子機器(包含行動式電話、電腦等的攜帶 15 ’式電子機器終端機)、抑或電子構件及電子裝置(譬如半導體 裝置及包含印刷配線基板等的半導體積體電路裝置)。再 者,亦可作為長期使用時需高性能、輕量且劣化少的電子 機器上所使用的導電性構件(片材等)、電磁波遮蔽用構件 (片材等)、抑或實現剝離、斷線等不良情況少的電子零件及 20 電子裝置。又,此種電子零件,可例舉如電子零件安裝用 的散熱用凸塊、電子零件用等的配線通孔、電晶體用的閘 極電極、源極電極、汲極電極、通道電極等。 進而,本發明並不限於前述之電子零件及電子元件 等,亦可例舉如需要對重量比較高之導電性及傳熱性(平面 24 200815282 狀或曲面狀)之航太用的電子機器、醫療機器,或是包含行 動式電話及電腦等會產生電磁波之電子機器、導電性片 材、電子終端機用的高頻電磁波遮蔽材,及前述構件製作 上所用前驅體(包含所謂預浸材料)。 第4圖係一截面圖,概略地顯示將本發明之碳系奈米管 系材料應用於LSI用配線通孔上之半導體積體電路裝置。第 4圖中,於矽基板41上嵌入性地製作多數電晶體42等元件, 並形成有覆蓋該等元件的多數絕緣層(層間絕緣膜〜 43卜配線層位在挾絕緣層處,且預定的配線層之配線衫, 係藉由貫通絕緣層所形成的通孔4 6而與別層的配線4 5相 連。47係表示與連接元件群的配線45相連的接觸構件。最 上面的配線層係以保護層48而加以覆蓋。如該圖所示之产 =裝置中,藉由將本發明之破系奈米管系材料應用: U 岐善錢料對於肢溶媒的驗性,可提古 =特定溶媒内的s〇G等的絕緣性樹脂 :20 or a substance called Graphene Nano-Ribbon, which typically has a nanometer-scale thickness (e.g., 〇·3ηηι~ hundreds of nm) ‘but in the industrial use field ‘there is also a larger scale. The graphite sheet is in the form of a sheet, and the carbon is located at the apex of each hexagon of the honeycomb shape, and is composed of a single layer or a plurality of layers, and may be rolled up into a cylindrical shape. If it is rolled up and connected to the crimped end, it is the structure of the nanotube. Graphite sheets can be produced by any method. The simplest method is to open the graphite sheet, but it can be produced by the same method as the carbon nanotubes by CVD or the like. Graphite sheet material, especially graphite sheet, has a unique layer of graphite shell sheet material if the number of layers is too large, such as the surface of the high-quality surface of the tooth, the conductivity and the anisotropy of conductivity. It is close to the graphite structure, and the characteristic anisotropy on the graphite sheet is reduced. In general, the number of layers in the thickness direction is from 1 to 10 layers, and is often referred to as a graphite sheet. The length and the width of the thickness are not particularly limited, and may be appropriately selected depending on the application, and are generally in the range of 0.3 nm to several hundreds nm. "妷糸奈管系材料" means a material in which CNT or CNT has been modified by some intention. Typically, the CNTs of the nanotubes having a nanometer-scale cross section (e.g., a face diameter of 〇.3 nm to 2 Gnm). The length may be an example of a few tens of Xinjiang, but there is no special limitation. The CNT has a block k which can satisfy the conditions for displaying the properties of the metal, and the wire can satisfy the (four) branch conductor (semi-metal). The bump structure of the nature strip & As the Cnt of the present invention, any one which exhibits metallic properties and exhibits semiconductor properties can be used. Further, the case where the graphite sheet is modified means that the metal is semi-metallic. The "Carboniferous Nanotube System Material" in the Ming Dynasty also contains the peapod structure of the 200820282 peapod structure, that is, the whole body contains metal fullerene ( Metal properties such as fullerene), and other nanostructures different from the nanotubes are accumulated in the CNTs. That is, the "modification" in the foregoing also includes such a form. 5 The electrical conductivity or mechanical strength of, for example, a via hole can be enhanced by using a nanotube tube comprising a pea pod having other nanostructures as described above. For example, a cNT containing a fullerene containing a metal has a charge which appears on the outer side of the fullerene and appears on the outer side of the nanotube. This is calculated by the first principle, thereby improving the through hole. Electrical conductivity characteristics. 10 For example, fullerene containing metal, which exhibits metallic properties in its entirety, and other structures or molecules or atoms different from the nanotubes, may not exist in the nanotubes but exist in a composition Between adjacent nanotubes of the through hole. Further, between adjacent nanotubes containing metal fullerenes, other structures, molecules or atoms different from the above-mentioned nanotubes may be disposed. Thus, the modified aspect of the CNT is also the "breaking nanotube material" in the present invention. The formation of pure carbon nanotubes such as CNTs, and (4) the use of arc discharge and laser-burning materials. At present, the company also produces Vd (chemical vapor deposition (IV) CVD. Since the CVD axis method can be directly on the substrate The upper shape is such as a nano tube. Therefore, it is expected to be applied to the manufacture of an integrated circuit. Of course, the CNTi manufacturing method used in the present invention is not limited. The carbon-based nano tube material of the present invention is mostly The occasion should be as described above, the end of the material, the material grows on the substrate, the smear, the nano tube system material grows on the substrate. The matter itself is not a must for the invention. 200815282 The condition is, however, when the carbon system is used as the official material. When growing on a substrate, as described above, it is easy to directly receive VUV irradiation, and the adhesion to the substrate is good, so that it is preferable. When the carbon-based nanotube material of the present invention is produced by CVD. The material for forming the substrate is not particularly limited, and a conventional material can be suitably selected. When it is desired to obtain conductivity, it is preferable to use a conductive material, and when heat conductivity is desired, it is preferable to use a heat conductivity. 15 20 In the present invention, The apparatus for irradiating the carbon-based nanotube material with a vuv and supplying a specific substance is not particularly limited, and may be, for example, a device having the structure shown in Fig. 2 and Fig. 3. In Fig. 2, in the vuv The source and the lower portion of the 21 are provided with a supply line for the gas 22 diluted with the inert substance, and a blowout port 24 for the specific substance. The source 21 is cooled by the cooling medium 25. X' is at the outlet 24 In the lower portion, the substrate 27 having the longitudinally aligned CNT bundles 26 is moved to the right from the left side of the drawing. In Fig. 3, the medium is replaced by a water-cooled tube 31, and the reading substrate 27 is smeared by a material dilution. The gas 22 after the substance is moved in the supply line 23, and the rest is the same as in Fig. 2. Further, the 'longitudinal arrangement of the coffee beans ^ can be realized by using, for example, a CNT bundle grown in the through hole. The arrow "indicated by the solid line in the 2nd and 3rd drawings" indicates that the gas after the specific (4) is diluted with the inert substance: the flow of the medium 25 for cooling, and the arrow of the dotted line indicates the projection of the vuv. According to the present invention, When bonding with other materials, the new carbon-based nano-materials are introduced. The material is suitable for use in the electronic delivery member 2, and the "affinity improvement" of the present invention is as follows: the surface tension k with the material contact, the improvement of the job, the improvement of the adhesion, the increase of the adsorption amount, 22 200815282 The meaning of foreign matter (water, etc.) and void (small space) between the layers of other substances is reduced. The "other substances" at this time should be selected from conductive substances, insulating substances, and hydrophilic substances. At least one of a group consisting of a lipophilic substance and a substance having a specific group. When a carbon-based nanomaterial is used as a material for the 4th electronic device 4, the material for the material can be used for a long time. The electrical connection of the components 'thermal connection, mechanical connection, solvent and adhesive>, moisture resistance, etc., can avoid defects such as peeling and wire breakage caused by long-term use. Further, in the description of the present invention and the description, "specific group", "specific substance", "specific structure", "specific solvent", "specific bond" 10, and "specific material" "Specific" does not mean something that is a fixed decision, but means that it can be arbitrarily determined according to practical needs. Such a conductive material may, for example, be copper, aluminum or another electrically conductive substance such as a metal used in the electronic wiring portion, and as an insulating material, generally, s〇G, Any of the semiconductor sealing insulating resins such as TE〇s (tetraethoxydecane) and 15 polyimide resin, or the most recently used micropores or micropores, which is called "Low- K resin (NCS, SiLK, MSQ, etc.) (many Si element), or fluorine resin such as PFA, FEP, Teflon (registered trademark), etc., that is, suitable for fixing the electrical properties of CNT bundles The insulating material, in addition, the hydrophilic substance may, for example, be an alcohol-based solvent such as water, ethanol, decyl alcohol, phenol, diterpenoid, ethylene glycol, diethylene glycol, triethylene glycol or glycerin. Further, the lipophilic substance may, for example, be a paraffin-based solvent such as petroleum ether, n-hexane or cyclohexane, or an aromatic solvent such as benzene, toluene, monophenyl or decylphenol, or THF (tetrahydrofuran). , DMF (-mercaptocarboxamide), DMs〇 (diterpenoid), dimethylacetamide, 23 200815282 or 2 a ketone such as a ketone or MIBK (methyl isobutyl ketone), and a heterogeneous element (such as C, 0 or oxime) containing n-methyl quinone, dichloroethane, dichloroethane or pyrimidine. Polar solvent. Further, the substance having a specific group is basically a substance containing a functional group of the insulating substance, the hydrophilic substance, or the 5-lipophilic substance (preferably a low-viscosity gas or liquid). Any one of the typical examples may, for example, have -OH, -COOH, COOR, -NH2, -NR2 (R is a month group, an aromatic alkyl group or a derivative thereof), -CO-, -C=0, At least one of an imide linkage and an ether linkage, that is, an alcohol and a phenol, a carboxylic acid, an amine, a ketone, and a benzophenone. 10 The carbon-based nanomaterial of the present invention can be used for electrical products, electronic products, mechanical products, etc., and can be used for carbon-based nano materials or for any use, and in view of carbon-based nanoparticles. The superior electrical and thermal properties of the material are particularly suitable for medical, aerospace or portable electronic devices that generate electromagnetic waves (including mobile phones, computers, etc. carrying 15' electronic machine terminals), or Electronic components and electronic devices (such as semiconductor devices and semiconductor integrated circuit devices including printed wiring boards). In addition, it can be used as an electroconductive member (sheet or the like), an electromagnetic wave shielding member (sheet, etc.) used in an electronic device that requires high performance, light weight, and little deterioration during long-term use, or can be peeled or broken. Electronic components and 20 electronic devices with few undesirable conditions. Further, such an electronic component may be, for example, a heat dissipation bump for mounting an electronic component, a wiring through hole for an electronic component, a gate electrode for a transistor, a source electrode, a drain electrode, a channel electrode, or the like. Further, the present invention is not limited to the above-described electronic components, electronic components, and the like, and may be an electronic device that requires a relatively high weight conductivity and heat transfer property (plane 24 200815282 or curved surface). Medical equipment, or high-frequency electromagnetic shielding materials for electronic devices, conductive sheets, and electronic terminals that generate electromagnetic waves, such as mobile phones and computers, and precursors used in the manufacture of the above-mentioned components (including so-called prepregs) . Fig. 4 is a cross-sectional view schematically showing a semiconductor integrated circuit device in which a carbon-based nanotube material of the present invention is applied to a wiring via of an LSI. In Fig. 4, a plurality of elements such as a plurality of transistors 42 are embedded in the germanium substrate 41, and a plurality of insulating layers covering the elements are formed (interlayer insulating film 〜43) is disposed at the germanium insulating layer, and is predetermined The wiring layer of the wiring layer is connected to the wiring 45 of the other layer by the through hole 46 formed through the insulating layer. 47 indicates the contact member connected to the wiring 45 of the connection element group. The upper wiring layer Covered by a protective layer 48. As shown in the figure, the device is applied by using the broken nanotube material of the present invention: U 岐 钱 钱 对于 对于 对于 对于 对于 对于= Insulating resin such as s〇G in a specific solvent:
^透性,由該料;可堵塞住咖故 束固定化,如此,ώ 〜丨】且將CNT 的碳系奈米管系材料之上端,地切取長成於通孔内 連接。 又致共配線部分的良好電性 20 造概=:=?:料性•㈣件之搆 用在高機能電子元件的:卻米管嶋應 本發明之碳系奈米持料應用在枓上者’此時’可將 塊材料上。m如, 门幾月匕電子元件的冷卻用凸 了在以氮稀釋氧後之氣體、或以氮稀釋 25 200815282 氧及微量水後之氣體存在下,對第5圖中帶有CNT之基板進 行VUV處理,接著,藉由對已結束該處理之帶有CNT之基 板上的CNT部進行鍍敷(濕式處理),而可在cnt束之間的空 間内,製作欲充分浸透熱及電性傳導性物質(Cu、A1等之金 5屬專),即所谓CNT混成凸塊構造。之後,可將電子元件熱 壓著(宜為250 °C〜4501程度)於已結束前述處理之基板 上’製作使用業已浸透金屬等之CNT凸塊的高熱傳導性電 子元件。 第6圖係顯示本發明之電磁波遮蔽用片材或預浸材料 10的概略圖。即,可將CNT散佈於樹脂片材上,並將該片材 與其他樹脂片材貼合,以製得電磁波遮蔽用片材或預浸片。 實施例1 作為基板,係使用於Si晶圓{p型(1〇〇)面丨上,藉由濺鍍 而形成有25nm之Ni者,且以燈絲CVD法,將乙炔作為原 15料’以650°C將多層碳系奈米管長成至長度約1.5 μ m。測量 奈米管的面密度,約5χ10π根/cm2。 事先於潔淨的空氣中,以40〇。(:焙燒該試料15分鐘,並 去除奈米管的表面中除奈米管以外的可燃性雜質後,將之 迅速地移至本發明之處理裝置,並使用藉由其蒸氣壓為1氣 2〇 壓5體積%程度之純氮來,稀釋作為本發明之特定物質,即 三乙胺{N(CH2CH3)3}後的氣體。氣體流量為每分鐘1L。 此狀態下,使用可產生Xe準分子UV燈(產生中心波長 A=172nm)之輸出30mW/cm2、發光長度為4〇〇nm的準分子 UV燈,並照射VUV10分鐘。裝置的構造係使用第2圖中者。 26 200815282 藉由XPS(X射線光電子光譜法)及IR(紅外吸收)光譜術 分析本處理莉後之試料’確S忍處理别的奈米管内未存有的 碳氮鍵結,經處理後便加以形成。 又,除未進行VUV照射之點外,進行與前述相同之處 5 理,惟,經處理後並未產生碳氮鍵結。 實施例2 - 使用與貫施例1相同的特定物質’試料則使用於Si晶圓 φ {p型(100)面}上,以電弧放電法長成有單層碳系奈米管者。 進行與實施例1相同的處理。惟,處理時間係實施例i 10 的 ιοο/0〇^ permeability, from the material; can be blocked and fixed, so ώ ~ 丨 且 且 且 CNT CNT carbon nanotubes material upper end, ground cut into the through hole connection. Good electrical properties of the common wiring part 20:==: Material properties • (4) The structure of the high-performance electronic components: the meter tube is applied to the carbon-based nano-materials of the invention. 'At this time' can be placed on the block material. m, for several months, the cooling of the electronic components is carried out in the presence of a gas diluted with nitrogen by nitrogen or a gas diluted with nitrogen and nitrogen in the presence of nitrogen, and the substrate with CNTs in Fig. 5 is subjected to VUV treatment, and then, by plating (wet processing) the CNT portion on the CNT-containing substrate that has finished the treatment, it is possible to sufficiently penetrate the heat and electricity in the space between the cnt bundles. Conductive substances (gold, 5, etc. of Cu, A1, etc.), the so-called CNT hybrid bump structure. Thereafter, the electronic component can be heat-pressed (preferably from about 250 ° C to about 4501) on the substrate on which the above treatment has been completed. A highly thermally conductive electronic component using a CNT bump which has been impregnated with metal or the like can be produced. Fig. 6 is a schematic view showing a sheet for electromagnetic wave shielding or a prepreg 10 of the present invention. That is, the CNTs can be spread on the resin sheet, and the sheet can be bonded to other resin sheets to obtain an electromagnetic wave shielding sheet or a prepreg sheet. Example 1 As a substrate, it was used on a p-type (1 Å) surface of a Si wafer, and 25 nm of Ni was formed by sputtering, and acetylene was used as the original 15 by the filament CVD method. The multilayer carbon nanotubes were grown to a length of about 1.5 μm at 650 °C. The surface density of the nanotube was measured to be about 5 χ 10 π/cm 2 . 40 〇 in the clean air beforehand. (: The sample was fired for 15 minutes, and the flammable impurities other than the nanotubes in the surface of the nanotube were removed, and then quickly transferred to the treatment apparatus of the present invention, and the vapor pressure was 1 gas 2 The pure gas of about 5 vol% is diluted to dilute the gas which is a specific substance of the present invention, that is, triethylamine {N(CH2CH3)3}. The gas flow rate is 1 L per minute. In this state, Xe quasi can be produced by using An output of a molecular UV lamp (having a central wavelength of A = 172 nm) of 30 mW/cm 2 and an emission length of 4 〇〇 nm was irradiated with VUV for 10 minutes. The structure of the apparatus was as shown in Fig. 2. 26 200815282 by XPS (X-ray photoelectron spectroscopy) and IR (infrared absorption) spectroscopy analysis of the sample after the treatment of the sample, 'Surely tolerate the carbon and nitrogen bonds that are not present in other nanotubes, and then formed after treatment. Except for the point where VUV irradiation was not performed, the same points as described above were carried out except that carbon-nitrogen bonding did not occur after the treatment. Example 2 - Using the same specific substance as in Example 1 On the φ {p-type (100) plane of the Si wafer, it is grown by arc discharge method. Layers of carbon nanotubes are based. The same treatment as in Example 1. However, the processing time-based embodiment of the i ιοο 10 / 0〇
It由XPS(X射線光電子光譜法)及IR(紅外吸收)光譜術 分析該試料,確認處理前的奈米管内未存有的碳氮鍵結, 經處理後便加以形成。 實施例3 15 ,使用與實施例1相同的特定物質,並嘗試讓模擬地形成 Φ 電晶體之通孔構造的多層碳系奈米管胺化。 在Si基板上形成直徑i〇〇nm、深度i〇00nm的圓筒狀孔 洞圖案,並藉由濺鍍在包含底面之整個晶圓上形成1〇11111之 • Tl薄膜’且以DMA(微粒子產生器)將平均粒徑10腿之Co微 、 20粒子,散佈於包含底面的整個晶圓面上,再藉由熱cVD& 將長度1500nm之多層碳系奈米管長成至孔洞的上方。測定 奈米管之面密度,約3xi〇u根/crn2。 對該試料使用與實施例丨相同的裝置,並供給與實施例 1相同的特定物質,且與實施例〗相同地照射νυν。 27 200815282 對處理後之試料低下1%之氨水,稍待片刻後藉由熱板 充分乾燥,並以掃描式電子顯微鏡(SEM)進行觀察,確認奈 米管群在孔洞内係部分地成束狀。此可考慮為係氨水浸透 之痕跡。即’可考量為由於對於氨水之濡濕性良好,故氨 5水在奈米管表面濡濕,奈米管群因氨水而束狀的叢聚後, 氨水蒸發之痕跡。 相較於此,對無處理的孔洞圖案内之奈米管試料施行 相同處理後,確認處理前後並無太大變化,奈米管幾乎未 成束狀而各自孤立狀地分開豎立。即,處理前的奈米管對 10於氣水的、’需濕性不佳,氨水被奈米管反彈回去,其結果, 奈米管群並未猎由氨水而成束狀叢聚。 之後’由處理前後的試料切取各自之試料,並藉由 XPS(X射線光電子光譜法)及IR(紅外吸收)光譜術分析該試 料,確認處理前的奈米管内未存有的碳氮鍵結於處理後便 15 加以形成。 由前述結果,此奈米管係親水性提高,對於具有親水 性之溶媒、接著劑等物質可展現出良好的親和性。 進而,本實施例中,藉由氨水而成束狀的CNT上方面 與下方(基板)面間的電阻,係2Ω(歐姆)此一極低之值。 20 實施例4 使用與實施例1相同之處理系統,對模擬地形成有電晶 體之配線通孔構造(測S奈米管的面密度,約為5xl〇ll根 /cm2之)的多層碳系奈米管進行羰基化、羥基化。惟,亦可 替代三乙胺,使用以N2稀釋之氧及h2〇作為反應性物質。 28 200815282 在Si基板上形成直徑2〇0ηΠι、深度1000nm的圓筒狀孔 洞圖案,並藉由濺鍍在包含底面之整個晶圓上形成1〇11111之 Τι薄膜,且以DMA(微粒子產生器)在包含底面的整個晶圓 面上散佈平均粒徑7nm之Co微粒子,再藉由CVD法將長度 5 i500nm之多層碳系奈米管長成至孔洞之上方後,藉由與實 施例1之方法相同的手法,對該試料進行羰基化、羥基化。 以純氧為0.2%體積、其餘為氮之氣體作為含有特定物 質之氣體使用,且該氣體流量為每分鐘3L地進行處理。 裝置係使用與實施例1相同者,vuv亦以同於實施例1 10之方式進行照射。反應時間為實施例1的15%。 對處理後之多個試料滴下乙醇、MIBK(曱基異丁酮)及 前述二者的一比一(體積比)混合液,十分鐘後,以熱板充分 乾燥’並藉由掃描式電子顯微鏡(SEM)進行觀察,確認任一 試料中,奈米管群在孔洞内大部分都成束狀。束狀化的cNT 15比率,係乙醇〉一比一混合液>MIBK(曱基異丁酮)之順序 佔多數。此與前述氨水之情況相同地,可考慮為由於各個 液體混合物浸透後之痕跡。即,展現出對於前述媒體之濡 濕性係良好。另一方面,對未經處理的孔洞内之奈米管試 料施行相同處理,但不過是只有極少部分的奈米管可看出 20 成束化。 之後,切取各奈米管,並藉由xps(x射線光電子光譜 法)及IR(紅外吸收)光缙術進行分析,確認處理前的奈米管 内僅存有極少量的00鍵結及_〇H鍵結,惟經處理後,確認 各自形成約10倍之量(相當於鍵結莫爾數)。 29 200815282 由前述結果,此奈米管對極性物質的親水性提高’ 、> # 對於具有C=0鍵結及-OH鍵結之溶媒、接著劑等的物質’ * 現出良好的親和性。 實施例5 5 藉由與實施例4相同的VUV處理法,對於將〇=〇鍵妹及 -0H鍵結導入奈米管表面之模擬地形成通孔構造之構造’ 行銅鍍敷時,係在鍍敷晶種層形成用水溶液中進行浸濟處 理而預先種上Cii晶種層,以作為前處理。 具體言之,以與實施例4完全相同之方法,對藉由與貫 1〇施例4相同之方法製作的多層碳系奈米管(測定奈米管之面 密度,係約5χ10η根/cm2),以實施例1的3〇%時間來進行 VUV處理,之後,浸潰kCu鍍敷晶種水溶液中1〇分鐘。以 光學顯微鏡、SEM(掃描型電子顯微鏡)、TEM(穿透式電子 顯微鏡)及EDX進行觀察,幾乎所有的CNT都成束地束狀 15 化,且其表面上附著有多量的Cu微粒子。 再者,將Cu膜以厚膜而成膜時,形成CNT表面上吸附 有Cu的CNT-Cu複合體。 另一方面,作為比較例,係未進行vuv處理就浸潰於 Cu鍍敷晶種水>谷液内1〇分鐘,並以光學顯微鏡加以觀察, 20 CNT僅部分有束狀化,且晶種液之浸透未均等地進行。進 而,以SEM(掃描型電子顯微鏡)、TEM(穿透式電子顯微鏡) 及EDX進行觀察,Cu晶種層僅吸附於束狀化的部分上,由 該試料並無法形成均等的Cu鑛敷層。 實施例6 30 200815282 製作將CNT長成於樹脂面其中一面上之預浸片時,係 於施予VUV處理後將CNT層接著於内側,形成平面狀或其 他形狀的構件。 具體言之,依第6圖的S1,<系進行預長成,且在潔淨空 5氣中以400。〇焙燒b分鐘,去除掉奈米管表面中除奈米管以 外的可燃性雜質後,將之置入甲醇中進行二個小時的超音 波處理,而準備均勻分散之液體。將該液體以lmg/cm2的密 度,分散散佈於平面狀的ABS樹脂板(厚度〇 5mm)l,以6〇 。(:加以靜置乾燥並除去甲醇。依第6圖之S2,使用實施例i 1〇所用的VUV裝置,於以n2稀釋之氧氣(〇·5體積%)下進行處 理。氣體流量為10L/分鐘。 依第6圖之S3,將之與平面狀的ABS樹脂板(厚度〇5mm) 加以靜置重疊,並以較該樹脂板之融點更低忉它的溫度, 進行5分鐘程度的壓著而予以一體化。 15 如此,可製得導電性片材或電磁波遮蔽片材之預浸片。 又,此處,例示將CNT融著於ABS樹脂上之例,但亦 可應用改變樹脂及接著法者。譬如,亦可在形狀保持性較 小且為一般之預浸片狀態的片材上,散佈CNT並進行 處理。亦可適用於樹脂係包含熱硬化性樹脂之所有樹脂。 20又,只要在CNT固化過程中不會流散,成形法亦適用各種 方法。 實施例7 取代si晶圓上的奈米管,使用單層且縱向為2〇〇#斑、 橫向為800/zm之石墨片,將該片材置於潔淨的空氣中,以 31 200815282 400°C焙燒該15分鐘,並去除石墨片表面中除石墨片以外的 可燃性雜質後,將之迅速地移至本發明之處理裝置,並使 用藉由其蒸氣壓為1氣壓5體積%程度之純氮,來稀釋作為 本發明之特定物質,即三乙胺{N(CH2CH3)3}後的氣體。氣 5 體流量為每分鐘1L。 - 此狀態下,使用可產生Xe準分子UV燈(產生中心波長 λ =172nm)之輸出30mW/cm2、發光長度為4〇〇nm的準分子 UV燈,並照射VUV10秒鐘。裝置的構造係使用第2圖中者。 藉由XPS(X射線光電子光譜法)及IR(紅外吸收)光譜術 10分析本處理前後之試料,確認處理前的奈米管内未存有的 石炭氮鍵結,經處理後便加以形成。 又,除未進行VUV照射之點外,進行與前述相同之處 理,惟,經處理後並未產生碳氮鍵結。 實施例8 使用與實施例7相同方式所準備之石墨片(惟層數為5 層)。藉由與貫施例7相同之方法,進行石墨片之羥基化。 惟,取代二乙胺,藉由在乾燥氮氣環境下,以vuv光照射 體積分率0.5%之氧與10ppm之水蒸氣而進行。 相較於該等試料, 2〇 一比一混合液,無論右 滴下乙醇、MIBK(甲基異丁酮)及其 無論有否照射UV,濡濕性全無差異且照射It was analyzed by XPS (X-ray photoelectron spectroscopy) and IR (infrared absorption) spectroscopy to confirm the carbon-nitrogen bond which was not present in the nanotube before the treatment, and was formed after being treated. Example 3 15 The same specific substance as in Example 1 was used, and an attempt was made to amination of a multilayer carbon nanotube having a through-hole structure in which a Φ transistor was formed. A cylindrical hole pattern having a diameter i〇〇nm and a depth of i〇00 nm is formed on the Si substrate, and a T11 film of 1〇11111 is formed by sputtering on the entire wafer including the bottom surface, and DMA (microparticle generation) is formed. The Co micro and 20 particles having an average particle diameter of 10 legs were spread over the entire wafer surface including the bottom surface, and a multilayer carbon nanotube having a length of 1500 nm was grown to a position above the hole by heat cVD & The surface density of the nanotubes was determined to be about 3 xi〇u/crn2. The same apparatus as in Example 1 was used for the sample, and the same specific substance as in Example 1 was supplied, and νυν was irradiated in the same manner as in the Example. 27 200815282 A 1% ammonia water was dehydrated from the treated sample. After a while, it was sufficiently dried by a hot plate and observed by a scanning electron microscope (SEM) to confirm that the nanotube group was partially bundled in the hole. . This can be considered as a trace of ammonia soaking. That is, it can be considered that since the wettability with respect to the ammonia water is good, the ammonia water is wet on the surface of the nanotube, and the nanotubes are bundled by the ammonia water, and the ammonia water evaporates. On the other hand, after the same treatment was carried out on the nanotube specimen in the untreated pore pattern, it was confirmed that there was not much change before and after the treatment, and the nanotubes were almost not bundled and erected separately in isolation. That is, the nanotubes before treatment have a poor wettability, and the ammonia water is bounced back by the nanotubes. As a result, the nanotubes are not hunted by ammonia to form bundles. Then, the samples were cut out from the samples before and after the treatment, and the samples were analyzed by XPS (X-ray photoelectron spectroscopy) and IR (infrared absorption) spectroscopy to confirm the presence of carbon-nitrogen bonds in the nanotubes before the treatment. After processing, it is formed. From the foregoing results, the nanotube system is improved in hydrophilicity, and exhibits good affinity for a hydrophilic solvent, an adhesive, and the like. Further, in the present embodiment, the electric resistance between the upper side of the CNT and the lower side (substrate) surface formed by the ammonia water is an extremely low value of 2 Ω (ohm). 20 Example 4 Using the same processing system as in Example 1, a multilayer carbon system having a wiring via hole structure (measured in an areal density of about 5 x 1 根 根 / cm 2 ) of a transistor was formed in an analog manner. The nanotubes are carbonylated and hydroxylated. However, instead of triethylamine, oxygen diluted with N2 and h2 hydrazine may be used as a reactive substance. 28 200815282 A cylindrical hole pattern having a diameter of 2〇0ηΠ1 and a depth of 1000 nm is formed on a Si substrate, and a film of 1〇11111 is formed on the entire wafer including the bottom surface by sputtering, and DMA (Microparticle Generator) is used. Co particles having an average particle diameter of 7 nm were dispersed on the entire wafer surface including the bottom surface, and a multilayer carbon nanotube having a length of 5 500 nm was grown to a hole above the hole by a CVD method, and the same method as in Example 1 was carried out. In the method, the sample is subjected to carbonylation and hydroxylation. A gas containing 0.2% by volume of pure oxygen and remaining nitrogen was used as a gas containing a specific substance, and the gas flow rate was 3 L per minute. The apparatus was the same as that of Example 1, and the vuv was also irradiated in the same manner as in Example 1 10. The reaction time was 15% of Example 1. To the treated samples, ethanol, MIBK (mercaptoisobutyl ketone) and a one-to-one (volume ratio) mixture of the above were dropped, and after ten minutes, the plate was sufficiently dried 'by scanning electron microscope (SEM) Observation was carried out to confirm that in any of the samples, the nanotube group was mostly bundled in the pores. The ratio of bundled cNT 15 is the ratio of ethanol > one to one mixture > MIBK (mercaptoisobutyl ketone). This is considered to be a trace after permeation of each liquid mixture, as in the case of the aforementioned ammonia water. That is, it exhibits good wettability to the aforementioned medium. On the other hand, the same treatment was applied to the nanotube specimens in the untreated pores, but only a very small number of nanotubes could be seen as 20 bundles. After that, each tube was cut and analyzed by xps (x-ray photoelectron spectroscopy) and IR (infrared absorption) spectroscopy to confirm that there was only a very small amount of 00 bond and _〇 in the nanotube before treatment. H-bonding, but after treatment, it was confirmed that each formed about 10 times (corresponding to the number of bonding moiré). 29 200815282 From the above results, the hydrophilicity of the nanotubes to the polar substance is improved, and the material having a C=0 bond and an -OH bond, an adhesive, etc., exhibits good affinity. [Example 5] By the same VUV treatment method as in Example 4, when the structure of the through-hole structure was formed by introducing the 〇=〇 bond sister and the -OH bond to the surface of the nanotube tube, the copper plating was performed. The Cii seed layer was previously seeded in an aqueous solution for plating a seed layer formation to be pretreated. Specifically, in the same manner as in Example 4, a multilayer carbon nanotube prepared by the same method as in Example 4 (measuring the areal density of the nanotube, about 5 χ 10 η/cm 2 ) The VUV treatment was carried out for 3 〇% of the time of Example 1, and then, the kCu plating seed crystal aqueous solution was immersed for 1 Torr. Observed by optical microscopy, SEM (scanning electron microscope), TEM (transmissive electron microscope), and EDX, almost all of the CNTs were bundled in a bundle, and a large amount of Cu fine particles were attached to the surface. Further, when a Cu film is formed into a thick film, a CNT-Cu composite in which Cu is adsorbed on the surface of the CNT is formed. On the other hand, as a comparative example, it was immersed in Cu plating seed water > gluten solution for 1 未 minutes without performing a vuv treatment, and was observed by an optical microscope, and 20 CNTs were only partially bundled, and crystal The soaking of the seed liquid is not performed uniformly. Further, observation by SEM (scanning electron microscope), TEM (transmission electron microscope), and EDX, the Cu seed layer was adsorbed only on the bundled portion, and the sample was not able to form an equal Cu deposit layer. . Example 6 30 200815282 When a prepreg having CNTs grown on one side of a resin surface was produced, the CNT layer was applied to the inside after the VUV treatment, and a planar or other shape was formed. Specifically, according to S1 of Fig. 6, < is pre-grown, and 400 in clean air. After roasting for b minutes, the flammable impurities other than the nanotubes on the surface of the nanotubes were removed, and then placed in methanol for ultrasonic treatment for two hours to prepare a uniformly dispersed liquid. This liquid was dispersed and dispersed in a flat ABS resin sheet (thickness 〇 5 mm) at a density of 1 mg/cm 2 to 6 Torr. (: It was allowed to stand to dry and remove methanol. According to S2 of Fig. 6, the VUV apparatus used in Example i 1〇 was used for treatment under oxygen diluted at n 2 (〇·5 vol%). The gas flow rate was 10 L/ In accordance with S3 in Fig. 6, it is placed on a flat ABS resin sheet (thickness 〇 5 mm) and placed at a temperature lower than the melting point of the resin sheet, and pressed for 5 minutes. In this way, a prepreg sheet of a conductive sheet or an electromagnetic wave shielding sheet can be obtained. Here, an example in which CNT is fused to an ABS resin is exemplified, but a resin and a modified resin may be applied. Then, for example, it is also possible to disperse and process CNTs on a sheet having a small shape retention and a general prepreg state. It is also applicable to all resins containing a thermosetting resin in a resin. As long as it does not scatter during CNT curing, the forming method is also applicable to various methods. Example 7 Substituting the nanotube on the Si wafer, using a single layer of graphite with a longitudinal direction of 2 〇〇# spot and 800/zm in the transverse direction Sheet, the sheet is placed in clean air and fired at 31 200815282 400 ° C After 15 minutes, and removing the flammable impurities other than the graphite sheet in the surface of the graphite sheet, it was quickly transferred to the treatment apparatus of the present invention, and pure nitrogen having a vapor pressure of 1 vol. To dilute the gas which is a specific substance of the present invention, that is, triethylamine {N(CH2CH3)3}. The flow rate of the gas 5 is 1 L per minute. - In this state, a Xe excimer UV lamp can be produced (to generate a central wavelength) λ = 172 nm) output 30 mW/cm2, excimer UV lamp with an emission length of 4 〇〇 nm, and irradiated with VUV for 10 seconds. The structure of the device was as shown in Fig. 2. By XPS (X-ray photoelectron spectroscopy) And IR (infrared absorption) spectroscopy 10 analysis of the sample before and after the treatment, confirming that there is no carbon-carbon bond in the nanotube before the treatment, and after treatment, it is formed. In addition, except for the point where VUV is not irradiated, The same treatment as described above was carried out except that carbon-nitrogen bonding was not produced after the treatment. Example 8 A graphite sheet (only 5 layers) prepared in the same manner as in Example 7 was used. 7 The same method, the hydroxylation of the graphite sheet. Diethylamine was carried out by irradiating vuv light with a volume fraction of 0.5% oxygen and 10 ppm of water vapor under a dry nitrogen atmosphere. Compared to the samples, a mixture of 2〇1 and 1 was dispensed with ethanol right. , MIBK (methyl isobutyl ketone) and its UV-free, no difference in wetness
32 200815282 存有的& 键、、、。及-OH鍵結,於反應後形成相當之數量。 實施例9 里。 吏用各種物質,仿效實施例8之方法進行處理時, 想第8圖中概畋才可推 伐略地顯示之各種官能基,係導入於第7圖 略地顯示之餘中概 臀陷部。又,使用氧作為該等物質其中一 如第8圖所# 牙日守, y、,將產生新的缺陷,且該處亦可導入各 產業上之可利用性 10 15 20 (譬如應用在可使用礙系奈米管系材料之, 材料接合時,:員域),又」丽述碳系奈米管系材料係輿其他 親和性提面的新穎的碳系奈米管系材 【圖欢* 。 、靖單說明】 :回係利用CNT之配線通孔構造的概略橫截面 第2圖係顯示用以照射本發明之vuv ^ 繼其主要部分的概略圖。 W物質 弟3圖係顯示用以照射本發明之vuv,且供給 之裝置其主要部分的其他概略圖。、物處 第4圖係概略地顯示將本發明之碳系奈米管> 用於通孔上之半導體積體電路裝置的截面W。 料利 第5圖係顯示包含有高熱傳導性凸塊之電子元 造概要例的概略圖,該電子元件係將碳系奈:管=件,構 用在高機能電子元件的冷卻用凸塊材料上者。/、材料應 第6圖係-概略圖,顯示將本發明之碳系奈米管系;:、 應用在電磁波遮蔽材時,該製法例之概要。 g糸材料 33 200815282 第7圖係未處理之石墨片的概略截面圖。 第8圖係本發明之經處理後的石墨片之概略截面圖。 【主要元件符號說明】32 200815282 The & key, ,, and . And -OH bonding, forming a considerable amount after the reaction. In the embodiment 9, it is. When using various materials and carrying out the treatment in the same manner as in Example 8, it is necessary to push down the various functional groups which are slightly displayed in Fig. 8 and introduce them into the remainder of the outline of the figure. . Moreover, the use of oxygen as one of these substances, as shown in Fig. 8, will produce new defects, and the place can also be introduced into various industries for availability 10 15 20 (for example, When using materials that are incompatible with the system, when the materials are joined, the "member domain", and "the carbon-based nano-tube system materials" are other novel carbon-based nanotubes. * . [Jing Shan]: A schematic cross-section of a wiring through-hole structure using CNTs. Fig. 2 is a schematic view showing the main part of the vuv ^ for irradiating the present invention. The W material 3 diagram shows other schematic views of the main part of the device for illuminating the vuv of the present invention. Fig. 4 is a view schematically showing a cross section W of a semiconductor integrated circuit device in which a carbon nanotube of the present invention is used for a via hole. Fig. 5 is a schematic view showing an outline of an electron element including a high thermal conductivity bump which is used for a cooling bump material of a high functional electronic component. The above. /, Material: Fig. 6 is a schematic view showing a carbon-based nanotube system of the present invention; and an outline of the production method when applied to an electromagnetic wave shielding material. g糸Materials 33 200815282 Figure 7 is a schematic cross-sectional view of an untreated graphite sheet. Figure 8 is a schematic cross-sectional view of the treated graphite sheet of the present invention. [Main component symbol description]
1.. .基板 2.. .基底層 3.. .Cu配線層 4.. .Ta 膜 5.. .絕緣層 6…Ti膜1.. Substrate 2.. . Base layer 3.. .Cu wiring layer 4.. .Ta film 5.. Insulation layer 6...Ti film
7.. .觸媒金屬膜 8 …CNT 9.. .充填樹脂 21 •••VUV 源 22…以惰性物質稀釋特定物質 後的氣體 23.. .供給管路 24.. .吹出口 25.. .冷卻用媒體 26· "CNT 束 27.. .基板 31.. .水冷管 41.. .矽基板 42.. .電晶體 43a〜43f...層間絕緣膜 45·.·配線 46.. .通孔 47.. .接觸構件 48.. .保護層 51.. .基板 52.. .電極 53.. .觸媒金屬載置膜、觸媒金屬膜7.. Catalyst metal film 8 ... CNT 9.. Filling resin 21 •••VUV source 22...gas after diluting a specific substance with an inert substance 23. Supply line 24:. Cooling medium 26· "CNT bundle 27.. Substrate 31.. Water-cooled tube 41.. 矽 Substrate 42.. Transistor 43a to 43f... Interlayer insulating film 45·.·Wiring 46.. Through hole 47.. Contact member 48.. Protective layer 51.. Substrate 52.. Electrode 53.. Catalyst metal mounting film, catalytic metal film
54.. .CNT 3454.. .CNT 34
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102796991A (en) * | 2011-05-27 | 2012-11-28 | 清华大学 | Preparation method of graphene carbon nanotube composite film structure |
| TWI630397B (en) * | 2016-05-20 | 2018-07-21 | 鴻海精密工業股份有限公司 | Method for measuring charge distribution on a surface of a nanostructure |
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2007
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102796991A (en) * | 2011-05-27 | 2012-11-28 | 清华大学 | Preparation method of graphene carbon nanotube composite film structure |
| CN102796991B (en) * | 2011-05-27 | 2014-08-20 | 清华大学 | Method for preparing graphene carbon nanotube composite membrane structure |
| TWI630397B (en) * | 2016-05-20 | 2018-07-21 | 鴻海精密工業股份有限公司 | Method for measuring charge distribution on a surface of a nanostructure |
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