200814520 九、發明說明： 【發明所屬之技術領域】 本發明提供一種微型化集總式帶通濾波器（Miniature200814520 IX. Description of the invention: [Technical field to which the invention pertains] The present invention provides a miniaturized lumped bandpass filter (Miniature)
Lumped-Type Bandpass Filter)，特別是針對埋入有機ic封裝 基板（Organic Integrated Circuit Package Substrate)之集總式帶通 濾波器。 【先前技術】 參 目前微型化集總式帶通濾波器主要採用低溫共燒陶瓷 (Low Temperature Cofired Ceramic，LTCC)基板。主因在於低溫 共燒陶瓷基板具有多層高介電係數之薄層介質，所以能產 生電容值涵蓋範圍大且Q值高的電容器，形成設計微型化集 總式帶通濾波器之關鍵有利因素。使用低溫共燒陶瓷基板 技術製造微型化集總式帶通濾波器，在設計架構上大多採 用Η型電容或電感耦合並聯諧振電路（請參閱第八A圖與第 八B圖），而於第八A圖與第八B圖之電路架構下，在常見的無 線通訊頻段必須使用較大電容值之電容器，因此需要如低溫共燒 • 陶瓷基板製程提供多層高介電係數之薄層介質，方能完成帶通濾 波器之製造，詳細做法請參考以下文獻(S· Kobayashi and K. Saito，‘‘A miniaturerized ceramic bandpass filter for cordless phone systems/5 in IEEE MTT-S Int. Microwave Symp. Dig., 1995，pp· 391-394. H.S· Song，and Y.S、Lee, “A miniaturized 2.4 GHz band multi-layer bandpass filter using capacitively loaded quarter-wavelength slow-wave resonator/5 200814520 in IEEE MTT-S Int. Microwave Symp. Dig., 2003, pp. 515-518·)。 使用低溫共燒陶瓷基板技術製造微型化集總式帶通濾 波裔，雖然具有效能高且微形化效果佳等優點，但是在與IC 整合成單封裝系統模組的應用上，低溫共燒陶瓷基板技術 具有兩項難以克服的缺點，其一為製造及開發成本仍然遠 大於有機基板技術，其二則由於製程上的限制而在線路密 度上無法滿足單封裝系統模組之高密度佈線要求。目前市 場上之主流1C封裝基板技術為有機基板，除製程技術成熟 度高，成本低以外，其高密度的佈線能力也能滿足微型化 單封裝系統模組的設計需求。常見的有機1(:封裝基板，如 壓合板（laminate )及增層(build-up)等基板。 目前有機基板在製程上要實現高介電係數之薄層介質 及多層金屬佈局仍然有很大的限制，因此若要埋入大電容 值的電容器，勢必佔據過大基板面積，不符合微形化的要 求。因此先前在有機基板内埋帶通濾波器的設計實例中， 請參考以下文獻（L· Li, P· Bowles，L.T. Hwang，and S. Plager，S·，“Embedded passives in organic substrate for bluetooth transceiver module/5 in Proc. 53rd Electron. Comp. TechnoL Conf., 2003, pp. 464-469. L· Li， “Embedded passives in organic substrate for RF module and assembly characterization，’’ in Pn?c· 2004, pp· 74-82·)，均因 為電容器的因素而使得元件尺寸過大，導致元件效能不佳 並缺乏實用價值。 200814520 雖然目前已有研究單位開始發展内埋高介電係數薄層 介質於有機基板中，請參考以下文獻（I.R.Abothu，P.M· Raj，D· Balaraman，V· Govind，S· Bhattacharya，M.D· Sacks， M· Swaminathan， M J. Lance， and R.R. Tummala， “Development of high-k embedded capacitors on printed wiring board using sol-gel and foil-transfer processes，” in Proc. 54th Electron. Comp. Technol. Conf., 2004, pp. 514-520. D· Balaraman, P.M. Raj，R. Abothu, S.Lumped-Type Bandpass Filter), especially for the lumped bandpass filter embedded in the Organic Integrated Circuit Package Substrate. [Prior Art] The current miniaturized lumped bandpass filter mainly uses a Low Temperature Cofired Ceramic (LTCC) substrate. The main reason is that the low-temperature co-fired ceramic substrate has a plurality of thin dielectric layers with a high dielectric constant, so that a capacitor having a large capacitance range and a high Q value can be produced, and a key advantageous factor for designing a miniaturized lumped bandpass filter is formed. Miniaturized lumped bandpass filters are fabricated using low temperature co-fired ceramic substrate technology. Most of the design architectures use Η-type capacitors or inductively coupled parallel resonant circuits (see Figures 8A and 8B). In the circuit architectures of Figure 8A and Figure 8B, capacitors with large capacitance values must be used in common wireless communication bands. Therefore, it is necessary to provide multiple layers of high dielectric constant thin layer media, such as low temperature co-firing • ceramic substrate process. The bandpass filter can be manufactured. For details, please refer to the following documents (S·Kobayashi and K. Saito, ''A miniaturerized ceramic bandpass filter for cordless phone systems/5 in IEEE MTT-S Int. Microwave Symp. Dig., 1995, pp·391-394. HS· Song, and YS, Lee, “A miniaturized 2.4 GHz band multi-layer bandpass filter using capacitively loaded quarter-wavelength slow-wave resonator/5 200814520 in IEEE MTT-S Int. Microwave Symp Dig., 2003, pp. 515-518·). Using a low-temperature co-fired ceramic substrate technology to create a miniature lumped bandpass filter, albeit with high performance and simplification Good advantages, but in the application of IC integrated single-package system modules, low-temperature co-fired ceramic substrate technology has two insurmountable shortcomings, one of which is still much more expensive to manufacture and develop than organic substrate technology, and the other two Due to limitations in the process, the line density cannot meet the high-density wiring requirements of single-package system modules. Currently, the mainstream 1C package substrate technology on the market is an organic substrate, which has high maturity except for high process maturity and low cost. The wiring capability can also meet the design requirements of miniaturized single-package system modules. Common organic 1 (: package substrates, such as laminates and build-up substrates. Currently, organic substrates are required in the process.) Thin-layer dielectrics and multilayer metal layouts that achieve high dielectric constants still have significant limitations. Therefore, if a capacitor with a large capacitance value is buried, it will occupy an excessively large substrate area and does not meet the requirements for micro-morphization. For the design example of the buried bandpass filter, please refer to the following documents (L·Li, P· Bowles, LT Hwang, and S. Plager, S·, “Em Bedded passives in organic substrate for bluetooth transceiver module/5 in Proc. 53rd Electron. Comp. TechnoL Conf., 2003, pp. 464-469. L·Li, “Embedded passives in organic substrate for RF module and assembly characterization,'' In Pn?c· 2004, pp· 74-82·), due to the factor of the capacitor, the component size is too large, resulting in poor component performance and lack of practical value. 200814520 Although research units have begun to develop embedded high dielectric constant thin layer dielectrics in organic substrates, please refer to the following documents (IRAbothu, PM· Raj, D. Balaraman, V. Govind, S. Bhattacharya, MD·Sacks). , M. Swaminathan, M J. Lance, and RR Tummala, "Development of high-k embedded capacitors on printed wiring board using sol-gel and foil-transfer processes," in Proc. 54th Electron. Comp. Technol. Conf., 2004, pp. 514-520. D. Balaraman, PM Raj, R. Abothu, S.
Bhattacharya，M· Sacks，M. Lance，H· Meyer，M· Swaminathan，and R. Tumrnala，“Exploring the limits of low cost，organics-compatible high-k ceramic thin films for embedded decoupling applications/5 in Proc. 55th Electron. COmp. TVc/mW· C⑽/·，2005, pp. 1215-1221.8.)，可提供足夠 大，容值f電容器應用於電路設計，且目前已有商品化之 產j一疋在有機基板内埋咼介電係數材料製程仍受限 於開發成本及㈣雜，至今仍缝法歧被制在微型 化集總式帶通濾波器及單封裝系統模組的製造上。 L發明内容】 虫 在於提{、一種採用T型電残或電容|禹a 串聯諧振電路架構所今辞的饵 包这$电夺竊口 俨兮％剂儿 ° °十勺从尘化木總式帶通淚波哭，使 平板與第二平才反 板之微型化集總式帶通濾波器 第二電容，具有第-平板與i二: 一 >也杜— 。亡· 乐一電容，具有第 200814520 板，且該第一電容的第一平板電連接於該第二電容的第一 平板；一第一電感，串聯於該第一電容的第二平板；一第 二電感，串聯於該第二電容的第二平板；以及一第三電感， 電連接於該第二電容的第一平板與一接地端之間。其中該 微型化集總式帶通濾波器的佈局，利用該有機ic封裝基板 之導體側壁間所產生的電容耦合效應形成傳輸零點。 依據本發明之特徵，所提供之另一種埋入有機1C封裝 基板之微型化集總式帶通濾波器，包含：一第一電容，具 有第一平板與第二平板；一第二電容，具有第一平板與第 二平板，且該第一電容的第一平板電連接於該第二電容的 第一平板；一第三電容，電連接於該第二電容的第一平板 與一接地端之間；一第一電感，串聯於該第一電容的第二 平板；以及一第二電感，串聯於該第二電容的第二平板。 其中該微型化集總式帶通濾波器的佈局，利用該有機1C封 裝基板之導體側壁間所產生的電容耦合效應形成傳輸零 點。 本發明所提出的埋入有機1C封裝基板之微型化集總式 帶通濾波器，具有低成本、高效能、微形化效果佳以及容易 與1C整合成為單封裝系統模組等諸多優點，可大幅增加產 品的附加價值。 本發明之前述目的或特徵，將依據後附圖式加以詳細說 明，惟需明瞭的是，後附圖式及所舉之例，祇是做為說明 而非在限制或縮限本發明。 【實施方式】 200814520 雖然本發明將參閱含有本發明較佳實施例之所附 示予以充分描述’但在此描述之前應瞭解熟悉本行技蓺i 人士可修改本文中所描述之創作，同時獲致本創作: 效。因此，需暸解以下之描述對熟悉本行技蓺之人士而_ 為一廣泛之揭示，且其内容不在於限制本創作。 口 有鑒於先前技術之缺點，本發明採用如第一圖顯示之T =電感耦合串聯譜振電路架構設計微型化集總式帶通毅 裔，取代PI型電容或電感耦合並聯諧振電路架構。包人 :埠110、第二埠120、第一串聯譜振電路130、第二= 谐振電路140、接地電感4ωι50及接地端16〇。其中 串聯諧振電路130由:第-串聯電感£如與—第一’串聯電容 Q電串聯所組成，第二串聯譜振電路⑽係由一第 電感與一第二串聯電容Csed電串聯组成 = 諧振電路13G與第二串_振電路 I- «蝥-虫雜帝六广 ^ 經由弟一串聯電容 ^130 MM - ^ ¾ 5 路130與弟一串郭M皆振電路14〇曾 W50與接地端⑽電連接。1;^處再經由接地電感 頻率為 /、中串馬P諧振電路之諧振角 sed (1) 這些集總元件特徵有助於實現内的工容：， 的有機1C封裝基板中。 足此▼通濾波益於低成本 200814520 由先前針對埋入有機ic封裝基板之螺旋電感器的研究 中發現，請參考以下文獻0^辰〇&¥丨8，八.5拊〇11〇,1^1^111,1· Laskar, V. Sundaram, J. Hobbs, G.E. White, and R. Tummala, “RF-microwave multi-layer integrated passives using fully organic System on Package (SOP) technology/9 in IEEE MTT-S Int. Microwave Symp. Dig., 2001, pp. 1731-1734. S.H. Lee, S· Min，D· Kim，S· Dalmia，W· Kim，V· Sundaram，S· Bhattacharya，G· White，F· Ayazi，J.S. Kenney, M. Swaminathan，and R.R· Tummala，“High performance spiral inductors embedded on organic substrates for SOP applications,9 in IEEE MTT-S Int. Microwave Symp. Dig., 2002, pp. 2229-2232·)，可於很小的面積内實現高電感值之 夕圈螺疑笔感裔’在常用的無線通訊頻率範圍内，電感值 可以達到20 nH且Q值可大於30，已具備實現一高效能τ型架 構之微型化集總式帶通濾波器的條件。 本發明亦採用如第二圖顯示之T型電容耦合串聯諧振 ，路架構設計微型化集總式帶通濾波器，取代ρι型電容或 電感耦合並聯諧振電路架構，與第一圖之差別在於以接地 電容取代接地電感，故在此不再贅述。 凊翏閱第三圖，係顯示本發明埋入有機IC封裝基板之微型化 木、、A式f通濾波為之第一實施例佈局圖，其中有機j。封裝基板係 採用四層氮樹脂壓合板（Bismaleimide顶也此Laminate)之基板。 1佈局係按照第-圖所示之電路架構所完成。其中該第一串 ，，感430係形成於該有機1C封裝基板之第二層上，且該 第串聯電感430之一端經由第一金屬連通柱481電連接 200814520 第-埠410 ’該第一串聯電容460包含形成於該 裝基板之第-層與第二層上之二平板，其中該第—串聯電 容460之第二層平板與該第一串聯電感430之另— 聯，該第二串聯電容47〇包含形成於該有機Ic封裝 第-層與第二層上之二平板’其中該第二串聯電容土7〇盘 該第-串聯電容460之第-層平板電串聯，該第 =Bhattacharya, M. Sacks, M. Lance, H. Meyer, M. Swaminathan, and R. Tumrnala, "Exploring the limits of low cost,organics-compatible high-k ceramic thin films for embedded decoupling applications/5 in Proc. 55th Electron. COmp. TVc/mW· C(10)/·, 2005, pp. 1215-1221.8.), can provide a large enough, value-value f-capacitor for circuit design, and has been commercially available in the organic substrate. The process of embedding the dielectric constant material is still limited by the development cost and (4) miscellaneous. So far, the seam method has been fabricated in the miniaturized lumped bandpass filter and the single package system module. {, a kind of T-type electric residual or capacitor | 禹a series resonant circuit architecture, the word bait package this $ electric stealing mouth 剂% agent ° ° 10 spoons from the dustwood wood type with tears crying a second capacitor of the miniaturized lumped bandpass filter of the flat panel and the second flat panel, having a first-plate and an i-two: one> also a Du---------------------------------------------------------------------- And the first plate of the first capacitor is electrically connected to the second battery a first plate; a first inductor connected in series to the second plate of the first capacitor; a second inductor connected in series to the second plate of the second capacitor; and a third inductor electrically connected to the second capacitor Between the first plate and a ground, wherein the miniaturized lumped bandpass filter is configured to form a transmission zero by utilizing a capacitive coupling effect generated between the conductor sidewalls of the organic ic package substrate. Another miniaturized lumped bandpass filter embedded in an organic 1C package substrate, comprising: a first capacitor having a first plate and a second plate; and a second capacitor having a first plate and a first a first plate, the first plate of the first capacitor is electrically connected to the first plate of the second capacitor; a third capacitor is electrically connected between the first plate of the second capacitor and a ground; An inductor, connected in series with the second plate of the first capacitor; and a second inductor connected in series to the second plate of the second capacitor. The layout of the miniaturized lumped bandpass filter utilizes the organic 1C package substrate It The capacitive coupling effect generated between the sidewalls of the body forms a transmission zero point. The miniaturized lumped bandpass filter embedded in the organic 1C package substrate of the present invention has low cost, high efficiency, good micro-formation effect and easy 1C integration into a single package system module and many other advantages, can greatly increase the added value of the product. The above objects or features of the present invention will be described in detail based on the following figures, but it is necessary to understand the following figures and The illustrations are given by way of illustration only and not as a limitation or limitation of the invention. [Embodiment] 200814520 The present invention will be fully described with reference to the accompanying drawings in which the preferred embodiments of the present invention are described, but it should be understood that those skilled in the art can modify the invention described herein while obtaining This creation: Effective. Therefore, it is to be understood that the following description is a broad disclosure of those skilled in the art and is not intended to limit the present invention. In view of the shortcomings of the prior art, the present invention adopts the T = inductively coupled series spectral circuit architecture as shown in the first figure to design a miniaturized lumped bandpass, replacing the PI type capacitive or inductively coupled parallel resonant circuit architecture. Package: 埠110, second 埠120, first series resonant circuit 130, second=resonant circuit 140, grounding inductance 4ωι50, and ground terminal 16〇. The series resonant circuit 130 is composed of: a series-series inductor, such as a series connection with a first 'series capacitor Q, and a second series-series circuit (10) consisting of a first inductor and a second series capacitor Csed electrically connected in series = resonance Circuit 13G and the second string_vibration circuit I- «蝥-虫杂帝六广^ Via the brother a series capacitor ^130 MM - ^ 3⁄4 5 channel 130 and the brother a string Guo M vibration circuit 14 〇 W50 and ground (10) Electrical connection. 1; ^ at the ground through the inductor frequency of /, the resonance angle of the middle string P resonant circuit sed (1) These lumped component features help to achieve the internal working capacity:, in the organic 1C package substrate. This is a good result of the low-cost 200814520. From the previous research on the spiral inductor embedded in the organic ic package substrate, please refer to the following documents 0^辰〇&¥丨8, 八.5拊〇11〇, 1^1^111,1· Laskar, V. Sundaram, J. Hobbs, GE White, and R. Tummala, “RF-microwave multi-layer integrated passives using fully organic System on Package (SOP) technology/9 in IEEE MTT -S Int. Microwave Symp. Dig., 2001, pp. 1731-1734. SH Lee, S· Min, D· Kim, S· Dalmia, W· Kim, V· Sundaram, S·Bhattacharya, G·White, F · Ayazi, JS Kenney, M. Swaminathan, and RR·Tummala, “High performance spiral inductors embedded on organic substrates for SOP applications, 9 in IEEE MTT-S Int. Microwave Symp. Dig., 2002, pp. 2229-2232· ), it can realize high inductance value in a small area. The snail is suspected. In the common wireless communication frequency range, the inductance value can reach 20 nH and the Q value can be greater than 30. The condition of the miniaturized lumped bandpass filter of the τ-type architecture. The present invention also adopts a T-type capacitive coupling series resonance as shown in the second figure, and the road architecture design miniaturized lumped band pass filter replaces the ρι type capacitor or the inductively coupled parallel resonant circuit structure, and the difference from the first figure is that The grounding capacitor replaces the grounding inductance, so it will not be described here. Referring to the third figure, the layout of the first embodiment of the miniaturized wood embedded in the organic IC package substrate of the present invention and the A-type f-pass filter is shown, wherein the organic j is used. The package substrate is a substrate of four layers of nitrogen resin plywood (Bismaleimide top also Laminate). 1 Layout is done according to the circuit architecture shown in Figure 。. The first string, the sense 430 is formed on the second layer of the organic 1C package substrate, and one end of the series inductor 430 is electrically connected via the first metal via 481 to the 200814520 - 埠 410 'the first series The capacitor 460 includes two plates formed on the first layer and the second layer of the substrate, wherein the second layer of the first series capacitor 460 is further connected to the first series inductor 430, and the second series capacitor 47〇 includes two plates formed on the first layer and the second layer of the organic Ic package, wherein the second series capacitor 7 is electrically connected in series with the first layer of the series capacitor 460, the first =
感440係形成於該有機1C封裝基板之第二層上，其 二串聯電感440之一端經由第二金屬連通柱4们 二埠420,且該第三串聯電感440之另一端與該第: 容470之第二層平板電串聯’以及該接地電感物係形^ 於該有機1C封1基板之第二層上，其中該接地電感45〇之 第二端經由第三金屬連通柱485電連接該第二串聯電容47〇 與該第一串聯電容460之第一層平板，且該接地電%感45〇 之第一端經由第四金屬連通柱487電連接於接地端广，該接 地端係形成於該有機IC封裝基板之第四層上。本佈局的特 徵在於使得導體侧壁間產生微小電容耦合效應，並利用^ 電容耦合效應形成可控制之傳輸零點，用以加強本發明所 設計之帶通慮波益的禁帶哀減能力，且不需使用額外之譜 振器或傳輸線寺元件，可減少f通慮波器所使用的元件數目， 以實現微型化，進一步降低成本。 繼續參考第三圖，其中該第一串聯電感430、第二串 聯電感440及接地電感450之形狀係為矩形螺旋，且本發 明將該集總式帶通濾波器操作於2.5〜2.9 GHz之無線都會 區域網路（Worldwide Interoperability for Microwave Access，The sensing 440 is formed on the second layer of the organic 1C package substrate, and one end of the two series inductors 440 is connected to the second metal via column 420, and the other end of the third series inductor 440 is connected to the first: The second layer of the 470 is electrically connected in series and the grounding inductor is formed on the second layer of the organic 1C 1 substrate, wherein the second end of the grounding conductor 45 is electrically connected via the third metal connecting post 485 The second series capacitor 47 is connected to the first layer of the first series capacitor 460, and the first end of the grounding voltage sense 45 is electrically connected to the ground through the fourth metal via 487, and the ground is formed. On the fourth layer of the organic IC package substrate. The present invention is characterized in that a small capacitive coupling effect is generated between the sidewalls of the conductor, and a controllable transmission zero is formed by using a capacitive coupling effect, which is used to enhance the forbidden band mitigation capability of the present invention. Eliminating the need for additional spectrometers or transmission line temple components can reduce the number of components used in the f-pass filter to achieve miniaturization and further reduce costs. With continued reference to the third figure, the shape of the first series inductor 430, the second series inductor 440, and the grounding inductor 450 are rectangular spirals, and the present invention operates the lumped bandpass filter to operate in a wireless range of 2.5 to 2.9 GHz. Worldwide Interoperability for Microwave Access,
Max)應用頻段。經由推導，可知帶通濾波器在諧振角 11 200814520 頻率β及％位置具有反射零點，且在4%間可代表平坦的 通帶範圍，考慮實際有機1(:封裝基板製程的誤差情 造ΐ中t頻率飄移的現象，故將帶通濾波器的諧振 角乂員十4和^^刀別設定於2兀x2 〇5G rad/s及MW.hG rad/s ’比系統所要求之4〇〇 MHz頻寬大約三倍 «(roll-off -e),^ J^； 率越快，系統阻抗二:數由代表滚落速 數，可以利用下列公式計算出第由===參 振電路架構所需之元件值： 1感耦β串如諧 ^sed = [ΜΞΖΖΓΧΙΧ ωιω2 ω]Max) Application band. Through derivation, it can be seen that the band pass filter has a reflection zero point at the frequency β and % positions of the resonance angle 11 200814520, and can represent a flat pass band range between 4%, considering the actual organic 1 (the error of the package substrate process) t frequency drift phenomenon, so the resonance angle of the bandpass filter is set at 2兀x2 〇5G rad/s and MW.hG rad/s '4 要求 required by the system The MHz bandwidth is about three times «(roll-off -e), ^ J^; The faster the rate, the system impedance is two: the number is represented by the roll-off speed, and the following formula can be used to calculate the first === vibration-inducing circuit architecture Required component values: 1 inductively coupled beta string as ^sed = [ΜΞΖΖΓΧΙΧ ωιω2 ω]
L sedL sed
c〇：C sed u S：}- 'shd lcsed^i〇y2 其中，吟為串聯諧振電路之諧振角頻率 0)r :λ/§2 % (2) (3) (4) ’可以下式科表示為 (5) 下列公式 上述帶通濾波器的特性參數，可以利用 電路架構所需之元件 :算出第二圖τ型電容耦合串聯4振 值· 200814520C〇:C sed u S:}- 'shd lcsed^i〇y2 where 吟 is the resonant angular frequency of the series resonant circuit 0)r :λ/§2 % (2) (3) (4) 'can be of the following formula The equation is expressed as (5) the following parameters of the above-mentioned band-pass filter, you can use the components required by the circuit architecture: calculate the second figure τ type capacitive coupling series 4 vibration value · 200814520
C (δ) /、中％為串耳即谐振電路之諧振角頻率，可以下式另表示為 Ά 崎 (9) 型電容_人串以接地電容取代，意即以第二圖T 器。其中構設賴型化錢絲通渡波 層與第二層上之二半士含形成於該有機1C封装基板之第一 二串聯電容47gI^，而該接地電容之第—層平板與第 接，而該接地電容串聯電容之第—層平板電連 電連接於接地沪。年二層平板經由第四金屬連通柱487 局圖只差別在二2第二實.施例佈局圖與第-實施例佈 贅述。 妾也皂容取代接地電感450,故在此不再 型化;’係評估採用第―圖之電略架構設計微 =係圖，其中該集總式續波器操作於'路= ㈣時，所需要的電容量範圍均 iiHr/值範圍不大於20 nH，相當適合埋入有機 GHZ 外’為使插人損耗小於2犯’並提供i 於〇748H乾圍有3〇dB以上之衰減量’故選擇〜約等 0.755之間，其所需之4“、c與 6紐、〇.35奸及6纽。 刀別、、勺為 13 200814520 明麥閱第五A圖，係顯示基於第四圖之佈局結構並採 用四層氮樹脂壓合板基板加以製作之帶通濾波器成品。該 帶通濾波II成品所佔面積僅有3麵⑵醜，且經由檢視 該成品縱切面，如第五B圖所示，顯示各金屬層與介質層 厚度頗為均勻’且總厚度亦相當微薄’約只有0.45 故可達到微型化之效果。C (δ) /, % is the resonant angle of the resonant circuit, which can be expressed as the following: Ά ( (9) type capacitor _ people string replaced by grounding capacitor, which means the second figure T. The first two series capacitors 47gI^ formed on the organic 1C package substrate are disposed on the second half of the second layer, and the first layer of the grounding capacitor is connected to the first layer. The first layer of the grounding capacitor series capacitor is electrically connected to the grounding Shanghai. The second-layer flat plate is only partially differentiated in the second and second embodiments by the fourth metal connecting column 487. The layout of the embodiment and the first embodiment are described.妾 皂 皂 取代 取代 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地 接地The required capacitance range is iiHr/value range is not more than 20 nH, which is quite suitable for embedding the organic GHZ outside the 'in order to make the insertion loss less than 2' and provide i with a attenuation of more than 3〇dB in the 〇748H dry circumference' Therefore, choose ~ about 0.755, the required 4", c and 6 New Zealand, 〇.35 traits and 6 New Zealand. Knife, spoon for 13 200814520 Ming Mai read the fifth A map, the system is based on the fourth The layout structure of the figure is a finished product of a band pass filter made of a four-layer nitrogen resin plywood substrate. The area of the band-pass filter II product is only three sides (2) ugly, and the finished longitudinal section is examined, such as the fifth B. As shown in the figure, it is shown that the thickness of each metal layer and dielectric layer is quite uniform 'and the total thickness is also relatively thin', which is only about 0.45, so that the miniaturization effect can be achieved.
請參閱第六圖，係顯示第三圖之實際等效電路圖。包含第 一埠610、、第二埠62〇、第一串聯電感之等效電路63〇、第 二串聯電感之等效電路650、第一串聯電容與第二串聯電容 電串聯之專效電路640及接地電感之等效電路660。因為集 總元件間的相互耦合效應，使得帶通濾波器實際等效電路 比原始設計電路（第一圖）更加複雜。於實際等效電路可發 現’由兩片電容器之金屬板側壁所形成之耦合電容c,64l產 生一傳輸零點％，該傳輸零點可以下式計算： \ed V Csed + 因此，控制此耦合電容的大小即可用來選擇傳輸零點之頻 率位置。以此帶通濾波器為例，有機1C封裝基板之銅導體 厚度約10〜20 um，經由量測與推導可得知耦合電容Cw641 約為0.025pF，使得傳輸零點預測落在1GHz附近。 請參閱第七A圖與第七B圖，係分別顯示本發明帶 通濾波器之反射係數（Reflection Coefficient)與插入係數 (Insertion Coefficient)等重要性能參數。由圖中發現經 過等效電路及電磁模擬軟體(H F S S)計算所得之結果與經 過向量網路分析儀測量之結果頗為相符，其中該帶通濾波 14 200814520 器係埋入四層氮樹脂壓合板基板。通帶範圍符合原先預期 落於2.05〜3·35 GHz之間，在所重視的WiMax頻段2.5〜2.9 GHz之間其插入係數大於-1.2 dB，反射係數小於-15 dB。 另外，在第七B圖中可發現於1 GHz附近，具有一利用耦 合電容所產生之傳輸零點，使得在小於1.2 GHz頻率範圍 内具有大於40dB以上之衰減能力，結果顯示本發明濾波 器性能相當優異。 在詳細說明本發明的較佳實施例之後，熟悉該項技術 人士可清楚的瞭解，在不脫離下述申請專利範圍與精神下 進行各種變化與改變，且本發明亦不受限於說明書中所舉 實施例的實施方式。 15 200814520 【圖式簡單說明】 第一圖為本發明製造微型化集總式帶通濾波器所採用的τ 型電感耦合串聯諧振電路架構。 第二圖為本發明製造微型化集總式帶通濾波器所採用的τ 型電容耦合串聯諧振電路架構。 第三圖為本發明埋入有機1C封裝基板之微型化集總式帶 通濾波器之第一實施例佈局圖。 弟四圖為評估採用第一圖之電路架構設計微型化集總式帶 通濾、波的Ayd、Cw與等電路元件值與之關 係圖。 第五A圖為本發明帶通濾波器成品。 第五B圖為本發明帶通濾波器成品之縱切面。 第六圖為顯示第三圖之實際等效電路圖.。 第七A圖為顯示本發明帶通濾波器之反射係數。 第七B圖為顯示本發明帶通濾波器之插入係數。 第八A圖為習知製造微型化集總式帶通濾波器所採用的PI 型電容耦合並聯諧振電路架構。 第八B圖為習知製造微型化集總式帶通濾波器所採用的？1 型電感耦合並聯諧振電路架構。 【主要元件符號說明】 110…第一埠 120…第二埠 13〇-一第一串聯諧振電路 140…第二串聯諧振電路 36 200814520 150—接地電感 160—接地端 41〇…第一埠 420…第二埠 430…第一串聯電感 440—第二串聯電感 450—接地電感 460…第一串聯電容 H 470…第二串聯電容 481…第一金屬連通柱 483—弟二金屬連通柱 485…第三金屬連通柱 487…第四金屬連通柱 610…第一埠 620…第二埠 630…第一串聯電感之等效電路 640…第一串聯電容與第二串’聯電容電串聯之等效 _ 電路 641…由兩片電容器之金屬板側壁所形成之耦合電 容 650…第二串聯電感之等效電路 660…接地電感之等效電路 17 户。Please refer to the sixth figure, which shows the actual equivalent circuit diagram of the third figure. The first circuit 610, the second 埠62〇, the first series inductor equivalent circuit 63〇, the second series inductor equivalent circuit 650, and the first series capacitor and the second series capacitor are electrically connected in series. And the equivalent circuit 660 of the grounding inductance. The actual equivalent circuit of the bandpass filter is more complicated than the original design circuit (first figure) because of the mutual coupling effect between the lumped elements. In the actual equivalent circuit, it can be found that 'the coupling capacitance c formed by the side wall of the metal plate of the two capacitors, 64l produces a transmission zero point, and the transmission zero point can be calculated as follows: \ed V Csed + Therefore, the coupling capacitor is controlled. The size can be used to select the frequency position at which the zero point is transmitted. Taking the band pass filter as an example, the thickness of the copper conductor of the organic 1C package substrate is about 10 to 20 um. It can be known from the measurement and derivation that the coupling capacitance Cw641 is about 0.025 pF, so that the transmission zero point prediction falls near 1 GHz. Referring to Figures 7A and 7B, important performance parameters such as reflection coefficient and insertion coefficient of the bandpass filter of the present invention are respectively shown. It is found that the results obtained by the equivalent circuit and electromagnetic simulation software (HFSS) are in good agreement with the results measured by the vector network analyzer. The bandpass filter 14 200814520 is embedded in four layers of nitrogen resin plywood. Substrate. The passband range is expected to fall between 2.05 and 3.35 GHz, and the insertion factor is greater than -1.2 dB and the reflection coefficient is less than -15 dB between 2.5 and 2.9 GHz in the WiMax band of importance. In addition, in Figure 7B, it can be found in the vicinity of 1 GHz, with a transmission zero generated by the coupling capacitor, so that the attenuation capability is greater than 40 dB in the frequency range of less than 1.2 GHz, and the result shows that the filter performance of the present invention is equivalent. Excellent. Various changes and modifications can be made without departing from the scope and spirit of the invention, and the invention is not limited by the description. Embodiments of the embodiments are given. 15 200814520 [Simple description of the diagram] The first figure is the τ-type inductively coupled series resonant circuit architecture used in the manufacture of the miniaturized lumped bandpass filter of the present invention. The second figure is a τ-type capacitive coupled series resonant circuit architecture used in the manufacture of the miniaturized lumped bandpass filter of the present invention. The third figure is a layout view of a first embodiment of a miniaturized lumped bandpass filter embedding an organic 1C package substrate according to the present invention. The fourth figure is used to evaluate the circuit diagram design of the first diagram to miniaturize the lumped bandpass filter, the Ayd, Cw and other circuit component values of the wave. The fifth A is a finished product of the band pass filter of the present invention. The fifth B is a longitudinal section of the finished product of the band pass filter of the present invention. The sixth figure shows the actual equivalent circuit diagram of the third figure. Figure 7A is a graph showing the reflection coefficient of the bandpass filter of the present invention. Figure 7B is a diagram showing the interpolation coefficients of the band pass filter of the present invention. Figure 8A shows the PI-type capacitive coupling parallel resonant circuit architecture used in the conventional fabrication of miniaturized lumped bandpass filters. Figure 8B is used in the conventional manufacturing of miniaturized lumped bandpass filters? Type 1 inductively coupled parallel resonant circuit architecture. [Main component symbol description] 110...first 埠120...second 埠13〇-a first series resonant circuit 140...second series resonant circuit 36 200814520 150—grounding inductance 160—grounding terminal 41〇...first 埠420... The second series 430...the first series inductor 440—the second series inductor 450—the grounding inductor 460...the first series capacitor H 470...the second series capacitor 481...the first metal connecting column 483—the second metal connecting column 485...the third Metal connection column 487...fourth metal communication column 610...first 埠620...second 埠630...first series inductance equivalent circuit 640...first series capacitance and second series 'coupling capacitor series equivalent _ circuit 641... The coupling capacitor 650 formed by the side wall of the metal plate of the two capacitors... the equivalent circuit 660 of the second series inductance... the equivalent circuit of the grounding inductance 17 households.