200814381 ’ 九、發明說明： ： 【發明所屬之技術領域】 本發明是有關於一種高反射率發光二極體晶片之製造 方法’尤指一種可得到良好反射率之發光二極體晶片。 【先前技術】 按，習知的發光二極體晶片，請參閱第四圖所示，其 包括有一基板（51)，該基板（51)堆疊有n型氮化嫁半導 • 體層（52)與P型氮化鎵半導體層（53)，該N型氮化錄半 導體層（52)與P型氮化鎵半導體層（53)間堆疊有_發 光層（54 )，且該N型氮化鎵半導體層（52 )與P型氮化嫁 半導體層（53)分別與第一電極（55)及第二電極（56) 連結。 因習知的發光二極體晶片發光效率有限，因此便有人 創作出一種覆晶發光二極體晶片，其製造方法，請參閱第 第五圖所示，其步驟包括製作一發光二極體晶片，再將發 _光二極體晶片覆晶於覆晶基板（40 )上；其中該發光二極 體包括有一基板（31 )，該基板（3 1 )堆疊有N型氮化鎵半 導體層（32 )與P型氮化鎵半導體層（33 )，該N型氮化鎵 半導體層（32 )與P型氮化鎵半導體層（33 )間堆疊有一 發光層（37)，且該N型氮化鎵半導體層（32)與p型氮化 鎵半導體層（33 )分別與第一電極（34 )及第二電極（35 )連結，該第二電極（35 )連結與P型氮化鎵半導體層（ 3 3 )間堆疊有反射金屬導電層（3 6 )，該反射金屬導電層（ 36)由鎳（Ni)(361)、銀（Ag)(362)及金（Au)(3 63 5 200814381 )所堆疊而成，而鎳（Ni)(361)主要功能為黏著之用， 銀（362 )為反射之用，金（363 )為接導線之用，且反射 金屬導電層（36 )堆疊時，係將鎳（361 )、銀（362 )及金 (363)三種金屬一起放置於氧化爐中回火，並將錄（361 )、銀（362)及金（363)堆疊於P型氮化鎵半導體層（33 )上。 > 藉此，當發光二極體之發光層（37 )發光時，光會由 反射金屬導電層（36)反射而朝上發光；由於反射金屬導 電層（3 6)為反射光源之功用，因此反射金屬導電層 )之反射率會與發光效果有關，反射率越好發光效果越好 〇 習知的反射金屬導電層（36)，於鎳（361 )、銀（362 )及金（3 6 3 )堆疊時，係將鎳（3 6 1 )、銀（3 6 2 )及金（ 363 )二種金屬一起放置於氧化爐中回火，並將鎳（361) 、銀（362)及金（363)堆疊於p型氮化鎵半導體層（33 )上，然而，金（3 6 3 ) —起放入氧化爐中回火時，金（3 6 3 )容易軟化並滲入鑽進於銀（362 )中，如此銀（，362 )之 反射率會文到影響而下降，進而使發光效果變差。 口此’本無明人針對上述所存在之問題點，藉由多年 從事相關領域之研究與製造開發，經審慎評估後，終於發 明出一種可改進上述缺點之高反射率發光二極體晶片之製 造方法。 【發明内容】 欲解決之技術問題點：習知的覆晶發光二極體晶片之 6 200814381 製造方法， 晶片覆晶於 屬導電層係 火’並將錄 ，金與鎳及 鑽進於銀中 變差。 g 解決問 晶片之製造 光二極體晶 堆疊基板、] 光層、第一 金屬導電層 係將透明導 透明導電層 籲反射，然後 藉此， 爐中，可避 射率，讓發 金屬導電層 入於銀中之 對照先 晶片之製造 二極體有良 係先製作一發光二極體晶片，再將發光二極體 覆晶基板上；而習知發光二極體晶片之反射金 將錄、銀及金二種金屬一起放置於氧化爐中回 、銀及金堆疊於P型氮化鎵半導體層上；然而 銀一起放入氧化爐中回火時，容易軟化並滲入 ，如此會導致銀之反射率下降，造成發光效果 題之技術特點··提供一種高反射率發光二極體 方法，其係先製作一發光二極體晶片，再將發 片覆晶於覆晶基板上；其中發光二極體晶片係 ^型氮化鎵半導體層、P型氮化鎵半導體層、發 電極、第二電極及一反射金屬導電層；該反射 由透明導電層、銀及金所堆疊而成，其堆疊時 電層及銀先置於一氧化爐中，並進行退火，使 變成透明的金屬氧化物，而能讓光穿透到銀中 再於銀上鑛一層金。 本發明反射金屬導電層只有鎳及銀需放入氧化 免金滲入於銀中，因此可讓銀保持有良好的反 光二極體有良好的發光效果；改良一起將反射 之鎳、銀及金放置於氧化爐中回火，而讓金渗 缺點。 前技術之功效：提供一種高反射率發光二極體 方法’由於本發明具有良好的反射率，讓發光 好的發光效果；改良習知金滲入銀中，而讓反 7 200814381 射率下降，並導致發光效果變差之缺點。 有關本發明所採用之技術、手段及其功效，茲舉一較 佳實施例並配合圖式詳細說明於后，相信本發明上述之目 的、構造及特徵，當可由之得一深入而具體的瞭解。 【實施方式】 本發明係提供一種高反射率發光二極體晶片之製造方 法，请參閱第一圖至第三圖所示，其實施例之步驟包括：BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for fabricating a high reflectance light-emitting diode wafer, particularly a light-emitting diode wafer having good reflectance. [Prior Art] According to the conventional LED chip, as shown in the fourth figure, it includes a substrate (51) stacked with an n-type nitrided semiconductor layer (52). And a P-type gallium nitride semiconductor layer (53), a light-emitting layer (54) is stacked between the N-type nitride semiconductor layer (52) and the P-type gallium nitride semiconductor layer (53), and the N-type nitride The gallium semiconductor layer (52) and the P-type nitrided semiconductor layer (53) are respectively connected to the first electrode (55) and the second electrode (56). Since the luminous efficiency of the conventional light-emitting diode chip is limited, a flip-chip light-emitting diode wafer has been created. For the manufacturing method, please refer to the fifth figure, the steps include: fabricating a light-emitting diode chip, The photodiode wafer is then flipped on the flip chip substrate (40); wherein the light emitting diode comprises a substrate (31) stacked with an N-type gallium nitride semiconductor layer (32) And a P-type gallium nitride semiconductor layer (33), a light-emitting layer (37) is stacked between the N-type gallium nitride semiconductor layer (32) and the P-type gallium nitride semiconductor layer (33), and the N-type gallium nitride The semiconductor layer (32) and the p-type gallium nitride semiconductor layer (33) are respectively connected to the first electrode (34) and the second electrode (35), and the second electrode (35) is coupled to the P-type gallium nitride semiconductor layer ( 3 3 ) stacked with a reflective metal conductive layer (36) made of nickel (Ni) (361), silver (Ag) (362) and gold (Au) (3 63 5 200814381) Stacked, nickel (Ni) (361) is mainly used for adhesion, silver (362) is used for reflection, gold (363) is used for connecting wires, and When the metal conductive layer (36) is stacked, nickel (361), silver (362) and gold (363) metals are placed together in an oxidizing furnace for tempering, and (361), silver (362) and gold are recorded. (363) stacked on the P-type gallium nitride semiconductor layer (33). > Thereby, when the light-emitting layer (37) of the light-emitting diode emits light, the light is reflected by the reflective metal conductive layer (36) to emit light upward; since the reflective metal conductive layer (36) is a function of the reflected light source, Therefore, the reflectivity of the reflective metal conductive layer is related to the luminescent effect. The better the reflectance, the better the luminescent effect. The conventional reflective metal conductive layer (36) is used in nickel (361), silver (362), and gold (36). 3) When stacking, place nickel (3 6 1 ), silver (3 6 2 ) and gold ( 363 ) together in an oxidizing furnace for tempering, and place nickel (361), silver (362) and gold. (363) stacked on the p-type gallium nitride semiconductor layer (33), however, when gold (3 6 3 ) is placed in an oxidizing furnace for tempering, gold (3 6 3 ) easily softens and penetrates into the silver. In (362), the reflectance of such silver (, 362) is reduced by the influence of the text, and the illuminating effect is deteriorated. In view of the above problems, this unidentified person has invented a high-reflectivity LED chip that can improve the above-mentioned shortcomings after careful evaluation by years of research and manufacturing development in related fields. method. SUMMARY OF THE INVENTION Technical Problem to Be Solved: Conventional Flip-Chip Diode Wafer 6 200814381 Manufacturing Method, Wafer Overlay in a Conductive Layer Fire and Record, Gold and Nickel and Drill into Silver Getting worse. g Solving the fabrication of the wafer, the photodiode crystal stacking substrate, the optical layer, and the first metal conducting layer are respectively reflecting the transparent conductive transparent layer, and then, in the furnace, the electron-preventing layer is allowed to enter the metal. The manufacturing of the first wafer in the silver has a good light to produce a light-emitting diode wafer, and then the light-emitting diode flip-chip substrate; and the reflective gold of the conventional light-emitting diode wafer will be recorded, silver The two metals are placed together in the oxidizing furnace, and the silver and gold are stacked on the P-type gallium nitride semiconductor layer; however, when the silver is placed in an oxidizing furnace and tempered, it is easy to soften and infiltrate, which causes silver reflection. The rate is reduced, resulting in the technical characteristics of the luminous effect. · Providing a high-reflectivity LED method, which first produces a light-emitting diode wafer, and then flips the wafer onto the flip-chip substrate; The body wafer is a gallium nitride semiconductor layer, a P-type gallium nitride semiconductor layer, a hair electrode, a second electrode and a reflective metal conductive layer; the reflection is formed by stacking a transparent conductive layer, silver and gold, and when stacked Electric layer and Placed in a first oxidation furnace, and annealed, so that metal oxides become transparent, and allow the light to penetrate further into the silver on the silver layer of gold ore. In the reflective metal conductive layer of the present invention, only nickel and silver need to be oxidized and gold-free to penetrate into the silver, so that the silver can maintain a good light-emitting effect of the reflective diode; the improved together put the reflected nickel, silver and gold together. Tempering in the oxidation furnace, and let the gold seepage defects. The effect of the prior art: to provide a high reflectivity light-emitting diode method 'Because the invention has good reflectivity, so that the light-emitting effect is good; the modified gold penetrates into the silver, and the radiation rate of the anti-200814381 is lowered, and The disadvantage of causing the illuminating effect to deteriorate. The above-mentioned objects, structures and features of the present invention will be described in detail with reference to the preferred embodiments of the present invention. . [Embodiment] The present invention provides a method for manufacturing a high reflectivity LED chip. Referring to the first to third figures, the steps of the embodiment include:
袭作一發光一極體晶片：係先堆疊製作發光二極體晶 片（1 〇)之基板（丨丨），該基板（丨丨）堆疊有N型氮化鎵半 導體層（12)與P型氮化鎵半導體層（13)，該N型氮化鎵 半導體層（1 2 )與p型氮化鎵半導體層（丨3 )間堆疊有一 發光層（1 7 )，且該N型氮化鎵半導體層（丨2 )與p型氮化 鎵半導體層（1 3 )分別與第一電極（丨4 )及第二電極（工5 )連結，該第二電極連結（丨5 )與p型氮化鎵半導體層（ 1 3 )間堆疊有反射金屬導電層（丨6 ); 其中該反射金屬導電層（1 6 )由透明導電層（161)、 銀（1 62 )及金（丨63 )所堆疊而成，其堆疊時係將透明導 電層（161)及銀（162)先置於一氧化爐中，並進行退火 ’再將透明導電（161)及銀（162)先堆疊於？型氮化嫁 半導體層（13)上(如第一圖所示），藉此透明導電層（ΐ6ι )會變成透明的金屬氧化物，而能讓光穿透到銀（1 6㈧中 反射、然後於銀（162)上鍍-層金（163)(如第二圖所示 氡化錫、氧化錫銦 另外該透明導電層（1 61 )可為鎳 8 200814381 、氧化鋅、氧化紹辞等。且透明導電層（1 6 i )之厚度如果 在lnm以上，需進行50 0度以上之退火，使其能夠變成透 明，而厚度在1 nm以下，則需進行45 〇度以下之退火；另 外金（1 6 3 )層必須越厚越好，因為金（1 6 3 )太薄接線時 容易掉落。 覆晶：將發光二極體晶片（丨〇 )覆晶於覆晶基板（2〇 )上（如第三圖所示）。 藉此’當發光二極體（1 〇 )之發光層（丨7 )發光時， 光會由反射金屬導電層（丨6 )之銀（1 62 )層反射而朝上發 光。 · 由於本發明反射金屬導電層（丨6 )只有透明導電層（ 161)及銀（162)需放入氧化爐中，可避免金（ι63)滲入 於銀（1 6 2 )中，因此可讓銀（丨6 2 )保持有良好的反射率 ’讓發光一極體有良好的發光效果。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限制本發明，任何熟此項技藝者，在不脫離本發明之精神 和範圍内，當可做更動與潤飾，因此本發明之保護範圍當 視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 第一圖卜係本發明之製料光二極體晶片之製料明導電 層、銀兩層示意圖。 第二圖··係本發明之製作發光二極體晶片之鍍上金層之示 意圖。 第三圖：係本發明完成覆晶之示意圖。 200814381 4. # 第四圖：係習用之發光二極體晶片之示意圖。 ^ 第五圖：係習用覆晶發光二極體晶片之示意圖 【主要元件符號說明】 (1 0 )發光二極體 (11 )基板 (1 2 ) N型氮化鎵半導體層 (1 3 ) P型氮化鎵半導體層 (1 4 )第一電極 * ( 1 5 )第二電極 (1 6 )反射金屬導電層 (1 61 )透明導電層 (162) 銀 (163) 金 (1 7 )發光層 (20)覆晶基板 φ ( 3 1 )基板 (3 2 ) N型氮化鎵半導體層 (33) P型氮化鎵半導體層 (34) 第一電極 (35) 第二電極 (3 6 )反射金屬導電層、 (361 )鎳 (362 )銀 (363)金 10 200814381 (37)發光層 (40)覆晶基板 (5 1 )基板 (52) N型.氮化鎵半導體層 (53 ) P型氮化鎵半導體層 (5 4 )發光層 (55)第一電極 (56 )第二電極As a light-emitting one-pole wafer: a substrate (丨丨) in which a light-emitting diode wafer (1 〇) is stacked, and the substrate (丨丨) is stacked with an N-type gallium nitride semiconductor layer (12) and a P-type a gallium nitride semiconductor layer (13), a light emitting layer (17) stacked between the N-type gallium nitride semiconductor layer (12) and the p-type gallium nitride semiconductor layer (?3), and the N-type gallium nitride The semiconductor layer (丨2) and the p-type gallium nitride semiconductor layer (13) are respectively connected to the first electrode (丨4) and the second electrode (Work 5), and the second electrode is connected to (p5) and p-type nitrogen. A reflective metal conductive layer (丨6) is stacked between the gallium semiconductor layers (13); wherein the reflective metal conductive layer (16) is composed of a transparent conductive layer (161), silver (1 62 ), and gold (丨63) Stacked, the transparent conductive layer (161) and silver (162) are first placed in an oxidation furnace and annealed. Then transparent conductive (161) and silver (162) are stacked first. a type of nitrided semiconductor layer (13) (as shown in the first figure), whereby the transparent conductive layer (ΐ6ι) becomes a transparent metal oxide, allowing light to penetrate into the silver (16 (8), and then The silver (163) is plated with a layer of gold (163) (as shown in the second figure, tin oxide, indium tin oxide, and the transparent conductive layer (1 61 ) may be nickel 8 200814381, zinc oxide, oxidized, and the like. And if the thickness of the transparent conductive layer (1 6 i ) is above 1 nm, it needs to be annealed at 50° or more to make it transparent, and if the thickness is below 1 nm, annealing at 45 degrees or less is required; (1 6 3 ) The thicker the layer, the better. Because gold (1 6 3 ) is too thin, it is easy to fall. Flip chip: flip the LED film on the flip chip (2〇) Above (as shown in the third figure). By this, when the light-emitting layer (丨7) of the light-emitting diode (1 〇) emits light, the light will be reflected by the silver (1 62) layer of the conductive metal conductive layer (丨6). Reflecting and illuminating upwards. · Since the reflective metal conductive layer (丨6) of the present invention only has a transparent conductive layer (161) and silver (162) to be placed in an oxidizing furnace, Avoiding the infiltration of gold (ι63) into silver (1 6 2 ), so that silver (丨6 2 ) can maintain a good reflectivity', so that the light-emitting body has a good light-emitting effect. Although the present invention has been preferably implemented The above disclosure is not intended to limit the present invention, and any person skilled in the art can make modifications and retouchings without departing from the spirit and scope of the present invention. The definition of the patent scope shall prevail. [Simplified description of the drawings] The first figure is a schematic diagram of the conductive layer and the silver layer of the material of the photodiode wafer of the invention. The second figure is the light-emitting of the invention. Schematic diagram of the gold plating on the diode wafer. Third: is a schematic diagram of the completion of the flip chip of the present invention. 200814381 4. #4: A schematic diagram of a conventional LED chip. ^ Figure 5: Schematic diagram of a conventional flip-chip light-emitting diode chip [Description of main components] (1 0) Light-emitting diode (11) substrate (1 2 ) N-type gallium nitride semiconductor layer (1 3 ) P-type gallium nitride semiconductor layer (1 4 ) first electrode * ( 1 5 ) second electrode (1 6 Reflective metal conductive layer (1 61 ) transparent conductive layer (162) silver (163) gold (17) light-emitting layer (20) flip-chip substrate φ (3 1 ) substrate (3 2 ) N-type gallium nitride semiconductor layer ( 33) P-type gallium nitride semiconductor layer (34) first electrode (35) second electrode (36) reflective metal conductive layer, (361) nickel (362) silver (363) gold 10 200814381 (37) luminescent layer ( 40) flip-chip substrate (5 1 ) substrate (52) N-type. gallium nitride semiconductor layer (53) p-type gallium nitride semiconductor layer (5 4 ) light-emitting layer (55) first electrode (56) second electrode
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