TW200803094A - Vertical-cavity surface-emitting laser with stable polarization, and fabrication method thereof - Google Patents
Vertical-cavity surface-emitting laser with stable polarization, and fabrication method thereof Download PDFInfo
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- TW200803094A TW200803094A TW95119529A TW95119529A TW200803094A TW 200803094 A TW200803094 A TW 200803094A TW 95119529 A TW95119529 A TW 95119529A TW 95119529 A TW95119529 A TW 95119529A TW 200803094 A TW200803094 A TW 200803094A
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- vertical cavity
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- 230000010287 polarization Effects 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000012535 impurity Substances 0.000 claims abstract description 19
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005253 cladding Methods 0.000 claims description 23
- 230000000739 chaotic effect Effects 0.000 claims description 9
- 239000011701 zinc Substances 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- CVXNLQMWLGJQMZ-UHFFFAOYSA-N arsenic zinc Chemical compound [Zn].[As] CVXNLQMWLGJQMZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000005286 illumination Methods 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 11
- 239000000463 material Substances 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000007648 laser printing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- Semiconductor Lasers (AREA)
Abstract
Description
AOC-06-09-TW 200803094 九、發明說明： 【發明所屬之技術領域】 本發明係有關一種穩定極化的垂直腔面射型雷射，尤指 一種在第二鏡面結構上，加入一個雜質誘發混亂層所形成之 非對稱發光窗口，來達到破壞雷射共振腔之兩軸向的對稱性， 進而控制極化（Polarization-lock)。 【先前技術】 按，第一圖所示係習用一種典型之垂直腔面射型雷射 (VCSEL)之截面剖示圖，該VCSEL(IO)主要包括有：一 η-摻雜 之砷化鎵（GaAs)基材（11)，一 η-摻雜之第一鏡面結構（12)係 形成在GaAs基材（11)上；一下彼覆層（13)係沈積在該第一鏡 面結構（12)上；一主動層（14)係形成在下彼覆層（13)上；一上 彼覆層（15)係形成在主動層（14)上；一第二鏡面結構（16)係 形成在上彼覆層（15)上，該第二鏡面結構（16)上形成一 p型 電極（17)，而基材（11)底面則形成一 η型電極（18)。 仍請參閱第一圖所示，該下披覆層（13)與上彼覆層（15) 使該第一及第二鏡面結構（12)、（16)分開，因此形成光腔。當 光腔在特定波長共振時，會控制鏡面分離，使其在預定波長 下共振，至少部分之第二鏡面結構（16)包含提供電流侷限區 (19)，侷限區（19)通常藉由將質子佈植在第二鏡面結構（16) 中而形成，或藉由氧化物層而形成，或是電流侷限區（19)界定 出導電環狀中心開口（D)，因此中心開口（D)形成通過電流通 過電流侷限區（19)至主動層（14)之導電路徑。操作時，外加偏 壓使電流（20)由ρ型電極（17)流向η型電極（18)，電流侷限區 -5 -AOC-06-09-TW 200803094 IX. INSTRUCTIONS: [Technical Field] The present invention relates to a vertically polarized vertical cavity surface type laser, in particular to an impurity added to a second mirror structure. The asymmetric illuminating window formed by the chaotic layer is induced to achieve the symmetry of destroying the two axial directions of the laser cavity, thereby controlling the polarization (locking-lock). [Prior Art] According to the first figure, a cross-sectional view of a typical vertical cavity surface-emitting laser (VCSEL) is used. The VCSEL (IO) mainly includes: an η-doped gallium arsenide. a (GaAs) substrate (11), an η-doped first mirror structure (12) is formed on the GaAs substrate (11); and a lower cladding layer (13) is deposited on the first mirror structure (12) Upper; an active layer (14) is formed on the lower cladding layer (13); an upper cladding layer (15) is formed on the active layer (14); a second mirror structure (16) is formed on the upper layer On the cladding layer (15), a p-type electrode (17) is formed on the second mirror structure (16), and an n-type electrode (18) is formed on the bottom surface of the substrate (11). Still referring to the first figure, the lower cladding layer (13) and the upper cladding layer (15) separate the first and second mirror structures (12), (16), thereby forming an optical cavity. When the cavity resonates at a particular wavelength, it controls the specular separation to resonate at a predetermined wavelength, at least a portion of the second mirror structure (16) includes a current confinement region (19), and the confinement region (19) is typically The proton is formed in the second mirror structure (16), or formed by an oxide layer, or the current confinement region (19) defines a conductive annular central opening (D), so the central opening (D) is formed The current path through the current confinement region (19) to the active layer (14). During operation, the applied bias voltage causes the current (20) to flow from the p-type electrode (17) to the n-type electrode (18), and the current confinement region -5 -
200803094 AOC-06-09-TW (19)限制該電流，形成電流（20)之部分電子在主動層（14)中 轉化成光子。此等光子束在第一鏡面結構（12)及第二鏡面結 構（16)間來回（共振），部分光子以光（21)通過p型電極（17)之 穿孔（d)而離開垂直腔面射型雷射（1〇)表面。然查，一般垂直 腔面射型雷射在製程上都是使用圓形或方形的形狀，因此形 成兩晶軸的對稱，以致造成極化特性的不穩定，為其缺失。 次按，垂直腔面射型雷射由於具有低臨界電流（L〇w Threshold Current)、光束成圓對稱、發散角小、適合作二維 陣列、製作容易等優點，近年來已經成為受矚目的光源。現 / ' 有的面射型雷射已經成功的應用在光通訊的收發模組 (transceiver)，但是在光通訊上的應用主要是用多模態 (multiple mode)面射型雷射，在300-500公尺的短距離傳輸； 而單4頁模腔面射型雷射（Single Transverse Mode VCSEL)，除 了可以應用在短程的光通訊系統中之外，更可用在光儲存， 雷射印刷和光電滑鼠等内部的傳感器上。但是在這些應用 上，為盤體（disc)或者鼓體（drum)提供電射功率的光學元件 有一定程度的極化敏感性（p〇larizati〇n sensitivity)。當該光 線的極化（或稱偏振）飄移（drift)時，該飄移將被轉變成有害 的輸出功率波動。基於上述原因，這種應用中的光源必須具 有穩定的固定極化，同時，對於生產出的每一個雷射，該極化 的方向必須相同。 然而，相對於入射的電流和操作溫度，該類型的極化是 不穩定的。兩種退化的直角極化狀態和基本的模式一起經 ¥在臨近區域附近和臨界點之上被觀察到。隨著入射電流 的增加，將傾向於射出一種和基本的極化相垂直，帶有極化 -6-200803094 AOC-06-09-TW (19) Limit this current, and part of the electrons forming the current (20) are converted into photons in the active layer (14). The photon beams are back and forth (resonant) between the first mirror structure (12) and the second mirror structure (16), and some of the photons exit the vertical cavity surface by the light (21) through the perforations (d) of the p-type electrode (17). Shot type laser (1 inch) surface. However, in general, vertical cavity surface-emitting lasers use a circular or square shape in the process, thus forming a symmetry of the two crystal axes, resulting in instability of polarization characteristics, which is missing. Sub-press, vertical cavity surface type laser has become an eye-catching in recent years due to its low critical current (L〇w Threshold Current), rounded beam symmetry, small divergence angle, suitable for two-dimensional array, and easy fabrication. light source. Now / 'some surface-emitting lasers have been successfully applied to optical transceivers, but the application in optical communication is mainly using multi-mode surface-emitting lasers at 300. - 500 meters short-distance transmission; and the single 4-page single-transmission mode (Single Transverse Mode VCSEL), in addition to the short-range optical communication system, can be used in optical storage, laser printing and On the internal sensor such as photoelectric mouse. However, in these applications, optical components that provide electrical power for a disc or drum have a degree of polarization sensitivity. When the polarization (or polarization) of the light is drifted, the drift will be converted into unwanted output power fluctuations. For the above reasons, the light source in this application must have a stable fixed polarization, and the polarization must be the same for each laser produced. However, this type of polarization is unstable relative to the incident current and operating temperature. The two degenerate right-angle polarization states are observed together with the basic mode by the vicinity of the vicinity and above the critical point. As the incident current increases, it will tend to emit a phase perpendicular to the fundamental polarization with polarization -6-
AOC-06-09-TW 200803094 〔：更鬲級模式的橫模。由於缺乏對極化狀態的選擇，隨 著電抓的i曰加，將出現不穩定的極化接通，其導致過多的雜 afl並增加位元的錯誤，因此，在寬廣的電流範圍内穩定的極 化對低雜訊的應用非常必要。 一對於單模態垂直腔面射型雷射極化特性的控制，目前已 經進行了若干的嘗試。在美國專利No.5995531中，使用垂直 腔面射型雷射組成材料的原子，分子或者電子結構中的各向 ' ，t &各向異性的結構配置，產生各向異性的特性，提供 垂直腔面射型雷射特性處理的偏置排列，或者在垂直腔面射 型雷射内部形成各向異性的結構，從而對射出的光束的極化 進行控制。在於1999年u月3〇日授予Gawetal的美國專 利No.5995531中也透露了使用橢圓形的，頂部區域互相交 又的鏡子來形成一種突起，該突起被姓刻入一離子植入區域 以形成一種拉長的形狀，極化的光線從該元件中射出。眾所 周知，在先前的設計類型中，通過在尾部射出的雷射上使用 矩形的空氣加速結構，不對稱的氧化物小孔和一個橢圓孔對 極化進行控制。在於2000年n月28日授予心也匕鄕的 美國專利Ν〇·5995531中透露的垂直腔面射型雷射，通過對 頂部鏡子的交又區域尺寸進行限制對極化方向進行控制，使 得鏡子提供的光波引導中只有一種單基本橫模。研製一種 不圓的或者橢圓型的元件對極化進行控制。 上述提到的所有元件都透過底層進行蝕刻，導致這些元 件表面被破壞，並非平面製程。這在很大程度上增加了加工 的複雜程度並影響元件的散熱性能。如果在一塊非單片電 路的元件上的安裝的部件上加上一個外部的應力，將導致不 -7-AOC-06-09-TW 200803094 〔: The transverse mode of the more advanced mode. Due to the lack of choice for the polarization state, an unstable polarization turn-on occurs with the electric pick-up, which leads to excessive miscellaneous afl and increases bit error, and therefore, is stable over a wide current range. The polarization is necessary for the application of low noise. A number of attempts have been made to control the polarization characteristics of single-mode vertical cavity surface-emitting lasers. In U.S. Patent No. 5,995,531, an anisotropic property is created in an atomic, molecular or electronic structure using a vertical cavity surface-emitting laser composition material to produce anisotropic properties, providing vertical The offset arrangement of the cavity-type laser characteristics processing, or the formation of an anisotropic structure inside the vertical cavity surface-type laser, controls the polarization of the emitted beam. U.S. Patent No. 5,995,531, issued to Gawetal, on May 3, 1999, which also discloses the use of elliptical, top-surface mirrors to form a protrusion that is engraved into an ion implantation region to form An elongated shape in which polarized light is emitted from the element. It is well known that in previous design types, a rectangular air-accelerated structure was used on the laser exiting the tail, and asymmetric oxide holes and an elliptical hole were used to control the polarization. The vertical cavity surface-emitting laser disclosed in U.S. Patent No. 5,995,531 issued to Xinyi on May 28, 2000, controls the polarization direction by limiting the size of the intersection of the top mirror and making the mirror There is only one single basic transverse mode in the provided lightwave guidance. Develop a non-circular or elliptical component to control polarization. All of the above mentioned components are etched through the underlying layer, causing the surface of these components to be destroyed, not a planar process. This greatly increases the complexity of the process and affects the thermal performance of the component. If an external stress is applied to a mounted component on a component other than a monolithic circuit, it will result in no -7-
200803094 AOC-06-09-TW 統一性和可靠性的問題。 【發明内容】 U +本發明主要目的，其係提供_種穩定極化的垂直腔面射 ”利用雜貝·誘發混亂層（lmpUrity_indUCed200803094 AOC-06-09-TW The issue of uniformity and reliability. SUMMARY OF THE INVENTION U + is the main object of the present invention, which provides a vertical cavity surface shot with stable polarization "Using the Bayer induced chaos layer (lmpUrity_indUCed
Diddering Layer)所形成的非對稱發光窗口來改變雷射兩 個:軸方向光#失的差異性，進而控制極化特性，因為此方 ’夬疋平面製程，因此具有製程容易，均勻性高，良率冑，和散熱 性佳等優點。 為達上述目的，本發明所採取之技術手段包含： a) ·提供一基材，其底面形成一第一型電極； b) ·在該基材上表面形成一第一鏡面結構； 〇·在該第一鏡面結構上形成一下披覆層； 句·在"亥下彼覆層上形成一主動層（Active Layer); e) ·在該主動層上形成一上披覆層； f) .在泫上披覆層上形成一第二鏡面結構，並在此一結構 中形成電流侷限區； g) ·在該第二鏡面結構上表面形成一第二型電極，且該 第二電極包含形成供雷射光射出之穿孔；以及 h) .在該第二鏡面結構上，加入一個雜質誘發混亂層所 形成之非對稱發光窗口，來達到破壞雷射共振腔之兩軸向的 對稱性，進而控制極化者。 依據前揭特徵，本發明進一步引入Zn擴散製程來定義 一種在垂直腔面射型雷射結構中的矩形光學小孔和一種由 離子佈植流程定義的，各向同性的主動層（Is〇tr〇pic Active Layer)。大小比率小於6um:4um的該製造的單模元件可以 -8-Diddering Layer) The asymmetric illuminating window is formed to change the difference between the two lasers: the loss of the axial direction light, and thus the polarization characteristics. Because of this '夬疋 planar process, the process is easy and the uniformity is high. Good yield, and good heat dissipation. In order to achieve the above object, the technical means adopted by the present invention include: a) providing a substrate having a first electrode formed on the bottom surface thereof; b) forming a first mirror structure on the upper surface of the substrate; Forming a first cladding layer on the first mirror structure; forming an active layer on the cladding layer under the sentence; e) forming an upper cladding layer on the active layer; f). Forming a second mirror structure on the upper cladding layer, and forming a current confinement region in the structure; g) forming a second type electrode on the upper surface of the second mirror structure, and the second electrode comprises forming a perforation for emitting laser light; and h). adding an impurity-induced asymmetric illuminating window formed by the chaotic layer on the second mirror structure to achieve the symmetry of destroying the two axial directions of the laser cavity, thereby controlling Polarized. According to the foregoing features, the present invention further introduces a Zn diffusion process to define a rectangular optical aperture in a vertical cavity surface-emitting laser structure and an isotropic active layer defined by an ion implantation process (Is〇tr 〇pic Active Layer). The manufactured single-mode component with a size ratio of less than 6um: 4um can be -8-
200803094 AOC-06-09-TW 沿者小孔的長邊方向高度穩定的被極化，消失比大於 i 5db。本發明中所涉及的結構係提供了 —種離散⑼似你) 和OEIC’s應用中合適的光源的靈活製造方法。 【實施方式】 首先，請«第二三圖料，其係本發明触實施例的 面射型雷射的截面剖示圖，其相同於第一圖習用面射型雷射 (10)之結構者’以相同圖號表示，由第二、三圖中顯示本發明 面射型雷射（100)其製程及主要結構包含下列步驟： a) .提供-基材⑴），其可為n_摻雜之珅化鎵(GaAs)或碟 化銦（InP)，但不限定於此，其底面形成一第一㉟電極〇8)，例 如為η型電極； b) .在該基材（11)上形成一第一鏡面結構（12)，其可由分 散式布拉格反射鏡（DBR)依需求堆疊所構成，主要是由 GaAs/AlAUnGaAsP/InP等許多對不同成分的交替晶層所 組成，每個交替晶層是四分之一雷射波長厚度，而且交替晶 層的對數必須設計足夠多，以產生足夠之反射率· c) .在該第一鏡面結構（12)上形成一下披覆層（13); d) .在邊下彼覆層（13)上形成一主動層（14)，其可為單一 晶層或多重量子井結構的發光活性層； e) .在该主動層（14)上形成一上披覆層（15); f) ·在忒上披覆層（15)上形成一第二鏡面結構（丨6)，其可 由DBR所組成，並在此一結構中形成電流侷限區（19);該電 流侷限區（19)包含以離子佈植及水氣氧化法其中任一所製 成，其中該離子佈植之離子包含H+、He+及〇。 g) .在3亥弟一鏡面結構（16)上表面形成一第二型電極 -9-200803094 AOC-06-09-TW The long side of the hole is highly stable and polarized, and the disappearance ratio is greater than i 5db. The structures involved in the present invention provide a flexible manufacturing method for a discrete (9) like you and suitable light source in OEIC's applications. [Embodiment] First, please refer to the second and third drawings, which are cross-sectional views of the surface-emitting laser of the embodiment of the present invention, which are identical to the structure of the first-image surface-emitting laser (10). The 'shown by the same figure number, the surface type laser (100) of the present invention is shown in the second and third figures. The process and main structure thereof comprise the following steps: a) providing - substrate (1), which can be n_ Doped gallium antimonide (GaAs) or indium (InP), but not limited thereto, the bottom surface of which forms a first 35 electrode 〇 8), for example, an n-type electrode; b). on the substrate (11) Forming a first mirror structure (12), which may be formed by a stacked Bragg mirror (DBR) stacked on demand, mainly composed of a plurality of alternating crystal layers of different compositions, such as GaAs/AlAUnGaAsP/InP, each The alternating crystal layer is a quarter of the laser wavelength thickness, and the logarithm of the alternating crystal layer must be designed to produce sufficient reflectivity. c) A lower cladding layer is formed on the first mirror structure (12). 13); d) forming an active layer (14) on the underlying cladding (13), which may be a single crystal layer or a multiple quantum well junction a luminescent active layer; e) forming an upper cladding layer (15) on the active layer (14); f) forming a second mirror structure (丨6) on the upper cladding layer (15), It may be composed of a DBR and form a current confinement region (19) in the structure; the current confinement region (19) comprises any one of ion implantation and water vapor oxidation, wherein the ion implantation The ions contain H+, He+ and 〇. g). Form a second type electrode on the upper surface of a mirror structure (16).
AOC-06-09-TW AOC-06-09-TW200803094 (17)，例如為p型電極，且該第二電極（17)包含形成供雷射光 射出之穿孔（d)。 至此，一典型之面射型雷射大致完成，惟此係一般習知 技術（Prior Art)，非本發明之主要專利標的，故其細部製程及 材料，容不贅述。 而，本發明之主要特徵，係在該第二鏡面結構（16)上，加 入一個雜質誘發混亂層（Impurity-induced Disordering Layer)(30)所形成的非對稱發光窗口（3 1)，來改變雷射兩個 晶軸方向光損失的差異性，進而控制極化特性。第二圖所示 係該非對稱發光窗口（3 1)之短邊（A)，而第三圖所示，係該非 對稱發光窗口（31)之長邊（B);至於該非對稱窗口（31)之實施 樣態，揭示於第六圖〜第八圖中，容後再述。 請參閱第四、五圖所示，其分別顯示本發明實驗之結果， 即反射率隨鋅（Zn)擴散深度所造成影響之曲線圖，及臨界增 益隨鋅擴散所造成影響之曲線圖。如第四圖所示，當鋅隨時 間增長深入雷射結構，會破壞鏡面結構，造成反射率下降，導 致雷射共振腔的臨界增益（Threshold)增加；如第五圖所示， 當Zn diffsuion的深度到0.5um時，其臨界增益是未經過Zn diffsuion的四倍，因此能有效的增加共振腔的臨界增益，所 以可以輕易的藉由製程參數的設計來控制極化。 前述雜質誘發混亂層（30)中之雜質包括原子及化合物 其中任一所構成。其中該原子包括鋅（Zn)、鎂（Mg)、鈹(Be)、 锶（Sr)、鋇（Ba)、矽（Si)及鍺（Ge)。又該化合物包括氧化鋅 (ZnO)及砷化鋅（Zn3As2)。 又，前揭形成之非對稱發光窗口（31)不限定以雜質誘發 -10-AOC-06-09-TW AOC-06-09-TW200803094 (17), for example, a p-type electrode, and the second electrode (17) includes a perforation (d) for emitting laser light. At this point, a typical surface-emitting laser is roughly completed, but this is a general art (Prior Art), which is not the main patent of the present invention, so its detailed process and materials are not described. However, the main feature of the present invention is to add an asymmetric illuminating window (31) formed by an Impurity-induced Disordering Layer (30) on the second mirror structure (16) to change The difference in light loss between the two crystal axes in the laser, and thus the polarization characteristics. The second figure shows the short side (A) of the asymmetric illuminating window (31), and the third figure shows the long side (B) of the asymmetric illuminating window (31); as for the asymmetric window (31) The implementation mode is disclosed in the sixth to eighth figures, and will be described later. Please refer to the fourth and fifth figures, which show the results of the experiment of the present invention, that is, the graph of the effect of the reflectance on the diffusion depth of zinc (Zn), and the graph of the effect of the critical gain on the diffusion of zinc. As shown in the fourth figure, when zinc grows deep into the laser structure over time, the specular structure is destroyed, causing the reflectivity to decrease, resulting in an increase in the critical gain (Threshold) of the laser cavity; as shown in the fifth figure, when Zn diffsuion When the depth is 0.5um, the critical gain is four times that of the Zn diffsuion, so the critical gain of the cavity can be effectively increased, so the polarization can be easily controlled by the design of the process parameters. The impurities in the impurity-inducing disorder layer (30) include any of an atom and a compound. Wherein the atom includes zinc (Zn), magnesium (Mg), beryllium (Be), strontium (Sr), barium (Ba), cerium (Si), and germanium (Ge). Further, the compound includes zinc oxide (ZnO) and zinc arsenide (Zn3As2). Moreover, the asymmetric light-emitting window (31) formed before is not limited to be induced by impurities. -10-
200803094 AOC-06-09-TW 混亂層來形成，其亦可包括採用外部植人高濃度的雜質所製 成。 請參閱第六圖⑷、（b)所示，其係揭示本發明固定離子佈 植之電流侷限區（19)的中心開口⑼為圓形，或是為方形（圖 未不），而改變雜質誘發混亂層（3〇)所形成的非對發光窗口 (31)為第六圖⑷所示之長‘方形，或是第六圖⑻所示之擴圓形 如對照第二、三圖所示，可以清楚得知，(A)表示該非對稱窗 口（31)之短邊，而（B)表示其長邊。 同理，該離子佈植的形狀和雜質誘發混亂層所形成的非 對稱發光窗口（31)的形狀可均為第七圖⑷所示之長方形，或 第七圖（b)所示之橢圓形。藉此，破壞雷射共振腔中兩晶軸的 對稱性，進而控制極化。 第八圖（a)、（b)所示，則是本發明另一實施例，其是在兩 晶軸的任一方向，在雷射共振腔上加入兩個平行的雜質誘發 此亂區所形成之發光窗口丨），藉此破壞雷射共振腔中兩晶 軸的對稱性，進而控制極化。而以上第六圖0)、（b)〜第八圖 (a)、（b)所示都是利用離子佈植所形成之電流侷限區及 其中心開口（D)，因此是屬平面製程，具有大量生產和均勻性 佳的優點。 而，以上的方法也可擴大到vcSEL，如第 九圖所示，其相同於前揭實施例構造者以相同符號表示，其 差異處僅在於該電流侷限區（19，）不是以離子佈植所形成，而 是以氧化區（oxidation Region)所形成之電流絕緣區。此一型 悲之面射型雷射（1〇1)亦可適用於前揭利用雜質誘發混亂層 所形成之非對稱發光窗口（31)，以控制極化者。 -11-200803094 AOC-06-09-TW The chaotic layer is formed, which may also include the use of externally implanted high concentrations of impurities. Please refer to the sixth figure (4), (b), which discloses that the central opening (9) of the current limiting region (19) of the fixed ion implantation of the present invention is circular or square (not shown), and the impurity is changed. The non-optical illuminating window (31) formed by the induced chaotic layer (3 为) is the long 'square shape shown in the sixth figure (4), or the expanded circle shown in the sixth figure (8) is as shown in the second and third figures of the comparison. It can be clearly seen that (A) represents the short side of the asymmetric window (31) and (B) represents the long side thereof. Similarly, the shape of the ion implant and the shape of the asymmetric light-emitting window (31) formed by the impurity-induced chaotic layer may be the rectangle shown in the seventh figure (4) or the ellipse shown in the seventh figure (b). . Thereby, the symmetry of the two crystal axes in the laser cavity is destroyed, thereby controlling the polarization. 8(a) and (b) are another embodiment of the present invention, in which any two parallel impurities are added to the laser cavity in either direction of the two crystal axes to induce the disordered region. The illuminating window 丨) is formed, thereby destroying the symmetry of the two crystal axes in the laser cavity, thereby controlling the polarization. The above-mentioned sixth figure 0), (b) to the eighth figure (a), (b) are the current limited regions formed by ion implantation and their central openings (D), so it is a planar process. It has the advantages of high production and good uniformity. However, the above method can also be extended to vcSEL, as shown in the ninth figure, which is the same as that of the former embodiment, and the difference is only that the current limited region (19) is not ion implanted. It is formed, but is a current insulating region formed by an oxidation region. This type of sad face-type laser (1〇1) can also be applied to the asymmetric light-emitting window (31) formed by the impurity-induced chaotic layer to control the polarizer. -11-
AOC-06-09-TW AOC-06-09-TW200803094 是以，本發明中揭示一種製造單橫膜腔面射型雷射中對 極化狀態進行控制的簡單方法，其使用一種帶有雜質擴散幾 何結構植入的單橫膜VCSEL來控制極化方向，本發明利用 加入一個雜質誘發混亂層（Impurity_induced Disordering Layer)所形成的非對稱發光窗口，此非對稱性窗口會對雷射 共振腔的兩個晶軸方向產生不同程度的光損失（optical loss)，再加上在（001)基板上所磊晶的面射型雷射結構在兩 個晶軸上些微的材料增益（material gain)，如此可以加大兩個 晶軸上的光損失的差異性，因此可產生穩定極化操作的單模 態垂直腔面射型雷射。 综上所述，本發明所揭示之技術手段，確具「新穎性」、 「進步性」及「可供產業利用」等發明專利要件，祈請 鈞 局惠賜專利，以勵發明，無任德感。 惟，上述所揭露之圖式、說明，僅為本發明之較佳實施例， 大凡熟悉此項技藝人士，依本案精神範疇所作之修飾或等效 變化，仍應包括本案申請專利範圍内。 -12-AOC-06-09-TW AOC-06-09-TW200803094 Therefore, a simple method for controlling the polarization state in a single-transverse cavity surface-emitting laser is disclosed in the present invention, which uses a diffusion with impurities A single-transparent VCSEL implanted in a geometric structure controls the direction of polarization. The present invention utilizes an asymmetric illumination window formed by the addition of an Impurity_induced Disordering Layer, which is the two of the laser cavity. The crystal axis direction produces different degrees of optical loss, plus the material gain of the epitaxial laser structure epitaxially grown on the (001) substrate on the two crystal axes. The difference in light loss between the two crystal axes can be increased, so that a single mode vertical cavity surface-emitting laser with stable polarization operation can be produced. In summary, the technical means disclosed in the present invention have the invention patents such as "novelty", "progressiveness" and "available for industrial use", and pray for the patent to be invented by the bureau. German sense. However, the drawings and descriptions disclosed above are only preferred embodiments of the present invention, and those skilled in the art will be able to include modifications or equivalent changes in the spirit of the present invention. -12-
AOC-06-09-TW AOC-06-09-TW200803094 【圖式簡單說明】 第一圖係習用一種垂直腔面射型雷射(VCSEL)之剖示圖。 第二圖係本發明VCSEL之剖示圖，用以顯示非對稱發 光窗口之短邊（A)。 第三圖係本發明VCSEL之剖示圖，用以顯示非對稱發 光窗口之長邊（B)。 第四圖係顯示反射率隨鋅擴散深度所造成影響之曲線圖。 第五圖係顯示臨界增益隨鋅擴散所造成影響之曲線圖。 第六圖（a)、（b)係顯示非對稱發光窗口之一種形狀示意圖。 第七圖（a)、（b)係顯示非對稱發光窗口之另一種形狀 示意圖。 第八圖（a)、（b)係顯示非對稱發光窗口之又一種形狀 示意圖。 第九圖係本發明另一可行實施例之VCSEL剖示圖。 【主要元件符號說明】 (11) 基材 (12) 第一鏡面結構 (13) 下披覆層 (14) 主動層 (15) 上彼覆層 (16) 第二鏡面結構 (17) 第二電極 (18) 第一電極 (19) 、（19’）電流侷限區 (20) 電流 -13-AOC-06-09-TW AOC-06-09-TW200803094 [Simplified Schematic] The first figure is a cross-sectional view of a vertical cavity surface type laser (VCSEL). The second figure is a cross-sectional view of the VCSEL of the present invention for displaying the short side (A) of the asymmetric light-emitting window. The third figure is a cross-sectional view of the VCSEL of the present invention for displaying the long side (B) of the asymmetric light-emitting window. The fourth graph shows a graph of the effect of reflectivity as a function of zinc diffusion depth. The fifth graph shows a plot of the critical gain as a function of zinc diffusion. The sixth figure (a) and (b) show a schematic view of a shape of an asymmetric illuminating window. The seventh diagrams (a) and (b) show another shape of the asymmetric illuminating window. The eighth figure (a) and (b) show still another shape of the asymmetric illuminating window. Figure 9 is a cross-sectional view of a VCSEL of another possible embodiment of the present invention. [Main component symbol description] (11) Substrate (12) First mirror structure (13) Lower cladding layer (14) Active layer (15) Upper cladding layer (16) Second mirror structure (17) Second electrode (18) First electrode (19), (19') current limited area (20) Current-13-
AOC-06-09-TW AOC-06-09-TW200803094 (21)光 (30) 雜質誘發混亂區 (31) 非對稱發光窗口 (D)中心開口 (A) 短邊 (B) 長邊 (d)穿孔 (100)、（101)面射型雷射 -14-AOC-06-09-TW AOC-06-09-TW200803094 (21) Light (30) Impurity-induced chaotic area (31) Asymmetric light-emitting window (D) Center opening (A) Short side (B) Long side (d) Perforated (100), (101) surface-emitting laser-14-
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| TWI854782B (en) * | 2022-08-16 | 2024-09-01 | 大陸商深圳市嘉敏利光電有限公司 | Vertical Cavity Surface Emitting Laser Device |
| CN120033531A (en) * | 2025-01-24 | 2025-05-23 | 深圳技术大学 | A single-mode high-power vertical cavity surface emitting laser structure and its manufacturing method |
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| TW201409881A (en) * | 2012-08-16 | 2014-03-01 | jin-wei Xu | Vertical-cavity surface-emitting laser with controllable optical mode |
| CN115377796A (en) * | 2022-09-05 | 2022-11-22 | 深圳博升光电科技有限公司 | High-speed vertical cavity surface emitting laser, electronic device with high-speed vertical cavity surface emitting laser and manufacturing method of high-speed vertical cavity surface emitting laser |
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| CN114814291A (en) * | 2022-05-09 | 2022-07-29 | 西安中科华芯测控有限公司 | Semiconductor micro-optical cavity acceleration sensor chip and monitoring system and method thereof |
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| TWI854782B (en) * | 2022-08-16 | 2024-09-01 | 大陸商深圳市嘉敏利光電有限公司 | Vertical Cavity Surface Emitting Laser Device |
| CN120033531A (en) * | 2025-01-24 | 2025-05-23 | 深圳技术大学 | A single-mode high-power vertical cavity surface emitting laser structure and its manufacturing method |
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