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TW200801254A - Process for producing a free-standing III-N layer, and free-standing III-N substrate - Google Patents

Process for producing a free-standing III-N layer, and free-standing III-N substrate

Info

Publication number
TW200801254A
TW200801254A TW095146966A TW95146966A TW200801254A TW 200801254 A TW200801254 A TW 200801254A TW 095146966 A TW095146966 A TW 095146966A TW 95146966 A TW95146966 A TW 95146966A TW 200801254 A TW200801254 A TW 200801254A
Authority
TW
Taiwan
Prior art keywords
iii
free
layer
substrate
standing
Prior art date
Application number
TW095146966A
Other languages
English (en)
Inventor
Gunnar Leibiger
Frank Habel
Stefan Eichler
Original Assignee
Freiberger Compound Mat Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freiberger Compound Mat Gmbh filed Critical Freiberger Compound Mat Gmbh
Publication of TW200801254A publication Critical patent/TW200801254A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H10P14/20—
    • H10P14/22—
    • H10P14/24—
    • H10P14/2921—
    • H10P14/3216—
    • H10P14/3416—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
TW095146966A 2005-12-21 2006-12-15 Process for producing a free-standing III-N layer, and free-standing III-N substrate TW200801254A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75204905P 2005-12-21 2005-12-21

Publications (1)

Publication Number Publication Date
TW200801254A true TW200801254A (en) 2008-01-01

Family

ID=37735107

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095146966A TW200801254A (en) 2005-12-21 2006-12-15 Process for producing a free-standing III-N layer, and free-standing III-N substrate

Country Status (6)

Country Link
US (1) US20070141814A1 (zh)
EP (1) EP1801269B1 (zh)
JP (1) JP2007204359A (zh)
CN (1) CN1988109B (zh)
PL (1) PL1801269T3 (zh)
TW (1) TW200801254A (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4756418B2 (ja) * 2006-02-28 2011-08-24 公立大学法人大阪府立大学 単結晶窒化ガリウム基板の製造方法
KR100714629B1 (ko) * 2006-03-17 2007-05-07 삼성전기주식회사 질화물 반도체 단결정 기판, 그 제조방법 및 이를 이용한수직구조 질화물 발광소자 제조방법
US9224817B2 (en) * 2006-04-07 2015-12-29 Sixpoint Materials, Inc. Composite substrate of gallium nitride and metal oxide
WO2007145873A2 (en) * 2006-06-05 2007-12-21 Cohen Philip I Growth of low dislocation density group-iii nitrides and related thin-film structures
TWI411125B (zh) * 2008-03-05 2013-10-01 Advanced Optoelectronic Tech 三族氮化合物半導體發光元件之製造方法及其結構
TW201003981A (en) * 2008-07-14 2010-01-16 Advanced Optoelectronic Tech Substrate structure and method of removing the substrate structure
DE102012204551A1 (de) * 2012-03-21 2013-09-26 Freiberger Compound Materials Gmbh Verfahren zur Herstellung von III-N-Einkristallen, und III-N-Einkristall
EP2815421B1 (de) * 2012-03-21 2018-01-31 Freiberger Compound Materials GmbH Verfahren zur herstellung von iii-n-templaten und deren weiterverarbeitung, und iii-n-template
US8796054B2 (en) 2012-05-31 2014-08-05 Corning Incorporated Gallium nitride to silicon direct wafer bonding
CN102817074B (zh) * 2012-07-23 2015-09-30 北京燕园中镓半导体工程研发中心有限公司 基于原位应力控制的iii族氮化物厚膜自分离方法
CN104952972B (zh) * 2015-04-14 2017-01-25 上海大学 自支撑CdZnTe薄膜的制备方法
US10364510B2 (en) * 2015-11-25 2019-07-30 Sciocs Company Limited Substrate for crystal growth having a plurality of group III nitride seed crystals arranged in a disc shape
CN112967948B (zh) * 2020-08-05 2022-05-20 重庆康佳光电技术研究院有限公司 金属镓去除装置及金属镓去除方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW428331B (en) * 1998-05-28 2001-04-01 Sumitomo Electric Industries Gallium nitride single crystal substrate and method of producing the same
US6218280B1 (en) * 1998-06-18 2001-04-17 University Of Florida Method and apparatus for producing group-III nitrides
DE10042947A1 (de) * 2000-08-31 2002-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
US6498113B1 (en) * 2001-06-04 2002-12-24 Cbl Technologies, Inc. Free standing substrates by laser-induced decoherency and regrowth
US6648966B2 (en) * 2001-08-01 2003-11-18 Crystal Photonics, Incorporated Wafer produced thereby, and associated methods and devices using the wafer
JP4035971B2 (ja) * 2001-09-03 2008-01-23 豊田合成株式会社 半導体結晶の製造方法
KR100678407B1 (ko) * 2003-03-18 2007-02-02 크리스탈 포토닉스, 인코포레이티드 Ⅲ족 질화물 장치를 제조하는 방법과 이 방법으로 제조된장치
JP4727169B2 (ja) * 2003-08-04 2011-07-20 日本碍子株式会社 エピタキシャル基板、当該エピタキシャル基板の製造方法、当該エピタキシャル基板の反り抑制方法、および当該エピタキシャル基板を用いた半導体積層構造
US7112495B2 (en) * 2003-08-15 2006-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
FR2860248B1 (fr) * 2003-09-26 2006-02-17 Centre Nat Rech Scient Procede de realisation de substrats autosupportes de nitrures d'elements iii par hetero-epitaxie sur une couche sacrificielle
US7115955B2 (en) * 2004-07-30 2006-10-03 International Business Machines Corporation Semiconductor device having a strained raised source/drain
US7169659B2 (en) * 2004-08-31 2007-01-30 Texas Instruments Incorporated Method to selectively recess ETCH regions on a wafer surface using capoly as a mask
US20060289891A1 (en) * 2005-06-28 2006-12-28 Hutchins Edward L Electronic and/or optoelectronic devices grown on free-standing GaN substrates with GaN spacer structures

Also Published As

Publication number Publication date
US20070141814A1 (en) 2007-06-21
CN1988109B (zh) 2012-03-21
EP1801269A1 (en) 2007-06-27
PL1801269T3 (pl) 2012-03-30
JP2007204359A (ja) 2007-08-16
EP1801269B1 (en) 2011-10-05
CN1988109A (zh) 2007-06-27

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