TW200800870A - Sulfonic acid ester compound and use thereof - Google Patents
Sulfonic acid ester compound and use thereof Download PDFInfo
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- TW200800870A TW200800870A TW096106887A TW96106887A TW200800870A TW 200800870 A TW200800870 A TW 200800870A TW 096106887 A TW096106887 A TW 096106887A TW 96106887 A TW96106887 A TW 96106887A TW 200800870 A TW200800870 A TW 200800870A
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- -1 Sulfonic acid ester compound Chemical class 0.000 title claims abstract description 153
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 25
- 125000003277 amino group Chemical group 0.000 claims abstract description 21
- 239000002253 acid Substances 0.000 claims abstract description 16
- 125000001183 hydrocarbyl group Chemical group 0.000 claims abstract description 16
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 6
- 239000002966 varnish Substances 0.000 claims description 51
- 150000002430 hydrocarbons Chemical group 0.000 claims description 49
- 239000000126 substance Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 38
- 150000001875 compounds Chemical class 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 28
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 16
- 239000003153 chemical reaction reagent Substances 0.000 claims description 15
- 125000003118 aryl group Chemical group 0.000 claims description 14
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 13
- 125000005843 halogen group Chemical group 0.000 claims description 13
- 238000006467 substitution reaction Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000004215 Carbon black (E152) Substances 0.000 claims description 6
- 125000004429 atom Chemical group 0.000 claims description 6
- 229930195733 hydrocarbon Natural products 0.000 claims description 6
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 4
- 239000011707 mineral Substances 0.000 claims description 4
- 239000000052 vinegar Substances 0.000 claims description 4
- 235000021419 vinegar Nutrition 0.000 claims description 4
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 claims description 3
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 229910001414 potassium ion Inorganic materials 0.000 claims description 3
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 claims description 3
- 229910001415 sodium ion Inorganic materials 0.000 claims description 3
- 238000005401 electroluminescence Methods 0.000 claims description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 20
- 239000003960 organic solvent Substances 0.000 abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 239000002904 solvent Substances 0.000 description 42
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 36
- 230000000052 comparative effect Effects 0.000 description 28
- 239000007787 solid Substances 0.000 description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 26
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 24
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 24
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 23
- 238000006243 chemical reaction Methods 0.000 description 23
- 125000001424 substituent group Chemical group 0.000 description 19
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 17
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 17
- 238000003756 stirring Methods 0.000 description 17
- 238000000576 coating method Methods 0.000 description 16
- 239000000203 mixture Substances 0.000 description 16
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 15
- 239000000706 filtrate Substances 0.000 description 15
- 239000000243 solution Substances 0.000 description 14
- 239000012299 nitrogen atmosphere Substances 0.000 description 13
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 13
- 239000002585 base Substances 0.000 description 12
- 229910000420 cerium oxide Inorganic materials 0.000 description 12
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 12
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 11
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 11
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 11
- 238000007740 vapor deposition Methods 0.000 description 11
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical class COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 10
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 10
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 9
- 125000002947 alkylene group Chemical group 0.000 description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- 239000012312 sodium hydride Substances 0.000 description 9
- 229910000104 sodium hydride Inorganic materials 0.000 description 9
- 150000003871 sulfonates Chemical class 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 9
- 238000005406 washing Methods 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 8
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- 125000000217 alkyl group Chemical group 0.000 description 8
- 230000005525 hole transport Effects 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- 239000012043 crude product Substances 0.000 description 7
- 235000019439 ethyl acetate Nutrition 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000011541 reaction mixture Substances 0.000 description 7
- 125000000542 sulfonic acid group Chemical group 0.000 description 7
- 125000004434 sulfur atom Chemical group 0.000 description 7
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 7
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 6
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 6
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 6
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 125000004122 cyclic group Chemical group 0.000 description 6
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 125000001624 naphthyl group Chemical group 0.000 description 6
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 6
- 239000002798 polar solvent Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- RICKKZXCGCSLIU-UHFFFAOYSA-N 2-[2-[carboxymethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]ethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]acetic acid Chemical compound CC1=NC=C(CO)C(CN(CCN(CC(O)=O)CC=2C(=C(C)N=CC=2CO)O)CC(O)=O)=C1O RICKKZXCGCSLIU-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 5
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 5
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 5
- 150000001448 anilines Chemical class 0.000 description 5
- 238000009835 boiling Methods 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 5
- 238000004440 column chromatography Methods 0.000 description 5
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- JFLRBGOBOJWPHI-UHFFFAOYSA-N pyridin-1-ium-1-sulfonate Chemical compound [O-]S(=O)(=O)[N+]1=CC=CC=C1 JFLRBGOBOJWPHI-UHFFFAOYSA-N 0.000 description 5
- 150000003222 pyridines Chemical class 0.000 description 5
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 4
- JGFZNNIVVJXRND-UHFFFAOYSA-N N,N-Diisopropylethylamine (DIPEA) Chemical compound CCN(C(C)C)C(C)C JGFZNNIVVJXRND-UHFFFAOYSA-N 0.000 description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 4
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 4
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 4
- 239000010405 anode material Substances 0.000 description 4
- 239000003729 cation exchange resin Substances 0.000 description 4
- 239000007810 chemical reaction solvent Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 125000004185 ester group Chemical group 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 4
- 239000011591 potassium Substances 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 4
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 238000000746 purification Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 239000006228 supernatant Substances 0.000 description 4
- 125000004149 thio group Chemical group *S* 0.000 description 4
- 125000003396 thiol group Chemical group [H]S* 0.000 description 4
- ONUFSRWQCKNVSL-UHFFFAOYSA-N 1,2,3,4,5-pentafluoro-6-(2,3,4,5,6-pentafluorophenyl)benzene Chemical group FC1=C(F)C(F)=C(F)C(F)=C1C1=C(F)C(F)=C(F)C(F)=C1F ONUFSRWQCKNVSL-UHFFFAOYSA-N 0.000 description 3
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 3
- 101150041968 CDC13 gene Proteins 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- HEDRZPFGACZZDS-MICDWDOJSA-N Trichloro(2H)methane Chemical compound [2H]C(Cl)(Cl)Cl HEDRZPFGACZZDS-MICDWDOJSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 3
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 150000002148 esters Chemical group 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000010436 fluorite Substances 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 3
- 229920000123 polythiophene Polymers 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 238000007670 refining Methods 0.000 description 3
- 238000001226 reprecipitation Methods 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- 150000003459 sulfonic acid esters Chemical class 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 150000007970 thio esters Chemical group 0.000 description 3
- 229930192474 thiophene Natural products 0.000 description 3
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical class C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- DCTMXCOHGKSXIZ-UHFFFAOYSA-N (R)-1,3-Octanediol Chemical compound CCCCCC(O)CCO DCTMXCOHGKSXIZ-UHFFFAOYSA-N 0.000 description 2
- WMIQCCDZARURRI-UHFFFAOYSA-N 1,1-dichloroethane Chemical compound CC(Cl)Cl.CC(Cl)Cl WMIQCCDZARURRI-UHFFFAOYSA-N 0.000 description 2
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 2
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 2
- MAGFQRLKWCCTQJ-UHFFFAOYSA-N 4-ethenylbenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=C(C=C)C=C1 MAGFQRLKWCCTQJ-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000005711 Benzoic acid Substances 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical group C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 2
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- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- FJKIXWOMBXYWOQ-UHFFFAOYSA-N ethenoxyethane Chemical group CCOC=C FJKIXWOMBXYWOQ-UHFFFAOYSA-N 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 125000005677 ethinylene group Chemical group [*:2]C#C[*:1] 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- UAIZDWNSWGTKFZ-UHFFFAOYSA-L ethylaluminum(2+);dichloride Chemical compound CC[Al](Cl)Cl UAIZDWNSWGTKFZ-UHFFFAOYSA-L 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 125000004705 ethylthio group Chemical group C(C)S* 0.000 description 1
- GMFTYFSOONOZOH-MCTJRNESSA-K europium(3+) 1,10-phenanthroline (Z)-4,4,4-trifluoro-3-oxo-1-thiophen-2-ylbut-1-en-1-olate Chemical compound [Eu+3].[O-]\C(=C/C(=O)C(F)(F)F)c1cccs1.[O-]\C(=C/C(=O)C(F)(F)F)c1cccs1.[O-]\C(=C/C(=O)C(F)(F)F)c1cccs1.c1cnc2c(c1)ccc1cccnc21 GMFTYFSOONOZOH-MCTJRNESSA-K 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 125000002541 furyl group Chemical group 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 1
- 125000001245 hexylamino group Chemical group [H]N([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 description 1
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 description 1
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical class CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- FMKOJHQHASLBPH-UHFFFAOYSA-N isopropyl iodide Chemical compound CC(C)I FMKOJHQHASLBPH-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- XIXADJRWDQXREU-UHFFFAOYSA-M lithium acetate Chemical compound [Li+].CC([O-])=O XIXADJRWDQXREU-UHFFFAOYSA-M 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- 229940031993 lithium benzoate Drugs 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- 229910052808 lithium carbonate Inorganic materials 0.000 description 1
- 229910000103 lithium hydride Inorganic materials 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- LDJNSLOKTFFLSL-UHFFFAOYSA-M lithium;benzoate Chemical compound [Li+].[O-]C(=O)C1=CC=CC=C1 LDJNSLOKTFFLSL-UHFFFAOYSA-M 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000001840 matrix-assisted laser desorption--ionisation time-of-flight mass spectrometry Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- GBMDVOWEEQVZKZ-UHFFFAOYSA-N methanol;hydrate Chemical compound O.OC GBMDVOWEEQVZKZ-UHFFFAOYSA-N 0.000 description 1
- 125000006178 methyl benzyl group Chemical group 0.000 description 1
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical group COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 description 1
- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 description 1
- 125000002816 methylsulfanyl group Chemical group [H]C([H])([H])S[*] 0.000 description 1
- 125000004573 morpholin-4-yl group Chemical group N1(CCOCC1)* 0.000 description 1
- 235000020638 mussel Nutrition 0.000 description 1
- NINOYJQVULROET-UHFFFAOYSA-N n,n-dimethylethenamine Chemical group CN(C)C=C NINOYJQVULROET-UHFFFAOYSA-N 0.000 description 1
- PSHKMPUSSFXUIA-UHFFFAOYSA-N n,n-dimethylpyridin-2-amine Chemical compound CN(C)C1=CC=CC=N1 PSHKMPUSSFXUIA-UHFFFAOYSA-N 0.000 description 1
- FGGAOQTXQHKQOW-UHFFFAOYSA-N n,n-diphenylnaphthalen-1-amine Chemical class C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=CC=C1 FGGAOQTXQHKQOW-UHFFFAOYSA-N 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- HGUZQMQXAHVIQC-UHFFFAOYSA-N n-methylethenamine Chemical group CNC=C HGUZQMQXAHVIQC-UHFFFAOYSA-N 0.000 description 1
- 229960002715 nicotine Drugs 0.000 description 1
- SNICXCGAKADSCV-UHFFFAOYSA-N nicotine Natural products CN1CCCC1C1=CC=CN=C1 SNICXCGAKADSCV-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000012038 nucleophile Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000000611 organothio group Chemical group 0.000 description 1
- 125000001715 oxadiazolyl group Chemical group 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- XDRYMKDFEDOLFX-UHFFFAOYSA-N pentamidine Chemical group C1=CC(C(=N)N)=CC=C1OCCCCCOC1=CC=C(C(N)=N)C=C1 XDRYMKDFEDOLFX-UHFFFAOYSA-N 0.000 description 1
- 125000004894 pentylamino group Chemical group C(CCCC)N* 0.000 description 1
- 125000004351 phenylcyclohexyl group Chemical group C1(=CC=CC=C1)C1(CCCCC1)* 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
- ZUKJXYRXZAVUJV-UHFFFAOYSA-N phosphoryl trichloride trichlorophosphane Chemical compound ClP(Cl)Cl.ClP(Cl)(Cl)=O ZUKJXYRXZAVUJV-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical group N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 150000004032 porphyrins Chemical group 0.000 description 1
- NTTOTNSKUYCDAV-UHFFFAOYSA-N potassium hydride Chemical compound [KH] NTTOTNSKUYCDAV-UHFFFAOYSA-N 0.000 description 1
- 229910000105 potassium hydride Inorganic materials 0.000 description 1
- OZYMELGGTSHIOM-UHFFFAOYSA-N potassium sodium bis(trimethylsilyl)azanide Chemical compound C[Si]([N-][Si](C)(C)C)(C)C.[Na+].[K+].C[Si]([N-][Si](C)(C)C)(C)C OZYMELGGTSHIOM-UHFFFAOYSA-N 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 125000006308 propyl amino group Chemical group 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005588 protonation Effects 0.000 description 1
- 238000011403 purification operation Methods 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 125000005493 quinolyl group Chemical group 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 230000003716 rejuvenation Effects 0.000 description 1
- BPEVHDGLPIIAGH-UHFFFAOYSA-N ruthenium(3+) Chemical compound [Ru+3] BPEVHDGLPIIAGH-UHFFFAOYSA-N 0.000 description 1
- YBCAZPLXEGKKFM-UHFFFAOYSA-K ruthenium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Ru+3] YBCAZPLXEGKKFM-UHFFFAOYSA-K 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 150000003967 siloles Chemical class 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- XFTALRAZSCGSKN-UHFFFAOYSA-M sodium;4-ethenylbenzenesulfonate Chemical compound [Na+].[O-]S(=O)(=O)C1=CC=C(C=C)C=C1 XFTALRAZSCGSKN-UHFFFAOYSA-M 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- 238000000967 suction filtration Methods 0.000 description 1
- 150000005846 sugar alcohols Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- HFRYYTUQIYTHCH-UHFFFAOYSA-N tetrasodium butan-1-olate Chemical group [O-]CCCC.[O-]CCCC.[O-]CCCC.[O-]CCCC.[Na+].[Na+].[Na+].[Na+] HFRYYTUQIYTHCH-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- RSPCKAHMRANGJZ-UHFFFAOYSA-N thiohydroxylamine Chemical compound SN RSPCKAHMRANGJZ-UHFFFAOYSA-N 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- 125000005259 triarylamine group Chemical group 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 150000003648 triterpenes Chemical class 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001132 ultrasonic dispersion Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-N zinc;quinolin-8-ol Chemical compound [Zn+2].C1=CN=C2C(O)=CC=CC2=C1.C1=CN=C2C(O)=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/63—Esters of sulfonic acids
- C07C309/72—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C309/75—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/63—Esters of sulfonic acids
- C07C309/72—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
- C07C309/73—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton to carbon atoms of non-condensed six-membered aromatic rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2601/00—Systems containing only non-condensed rings
- C07C2601/12—Systems containing only non-condensed rings with a six-membered ring
- C07C2601/14—The ring being saturated
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2601/00—Systems containing only non-condensed rings
- C07C2601/18—Systems containing only non-condensed rings with a ring being at least seven-membered
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electroluminescent Light Sources (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Epoxy Compounds (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Description
200800870 (1) 九、發明說明 【發明所屬之技術領域】 本發明係關於磺酸酯化合物及其利用,進而詳言之, 係關於在分子內可形成環狀錯合物之磺酸酯化合物,以及 此化合物之電子接受性物質之利用及熱酸發生劑之利用。 【先前技術】200800870 (1) Nine, the invention belongs to the technical field of the invention. The present invention relates to a sulfonate compound and its use, and more particularly to a sulfonate compound which can form a cyclic complex in a molecule. And the use of an electron accepting substance of the compound and the use of a thermal acid generator. [Prior Art]
在低分子有機EL(以下,簡稱OLED)元件有關於,藉 由設置作爲電洞注入層之銅酞菁(CuPC)層,使驅動電壓降 低或發光效率提筒等初期特性提高,進而可實現壽命特性 提局之報告被提出(非專利文獻 1: Applied Physies Letters,美國,1996 年,69 卷,p.2 1 60-2 1 6 2)。 另一方面’在使用高分子發光材料之有機EL(以下, 簡稱PLED)元件,係使聚苯胺系材料(專利文獻1:日本特 開平3 -273 087號,非專利文獻2:Nature,英國,1992 年,第357卷,p.477-479),或聚噻吩系材料(非專利文獻 3: Applied Physics Letters,美國,1 998 年,72 卷, p.2660-2662)所成薄膜,作爲電洞輸送層使用者,而可獲 得與OLED元件同樣效果者則有報告被發表。 近年來,有發現到使低分子低苯胺系材料或低噻吩系 材料溶解於有機溶劑之均一系溶液所成電荷輸送性清漆, 將由此清漆所得電洞注入層插入有機EL元件中,可獲得 基底基板之平坦化效果’或優異E L元件特性之報告被發 表(專利文獻2 :曰本特開2 0 0 2 - 1 5 1 2 7 2號公報,專利文獻 200800870 (2) 3:WO 2004-043117,專利文獻 4:W02005-043962)。 進而,在使用作爲電子接受性物質之1,4 -苯并二噁烷 磺酸化合物(專利文獻5:WO 2005-000832)下,可使OLED 元件之驅動電壓降低之報告被發表。In the low-molecular organic EL (hereinafter referred to as OLED) device, a copper phthalocyanine (CuPC) layer as a hole injection layer is provided, and the initial characteristics such as reduction in driving voltage or luminous efficiency are improved, and life can be realized. A report of the feature draw is proposed (Non-Patent Document 1: Applied Physies Letters, USA, 1996, 69, p. 2 1 60-2 1 6 2). On the other hand, an organic EL (hereinafter abbreviated as PLED) element using a polymer light-emitting material is a polyaniline-based material (Patent Document 1: Japanese Patent Laid-Open No. Hei-3-273087, Non-Patent Document 2: Nature, United Kingdom, 1992, Vol. 357, p. 477-479), or a polythiophene-based material (Non-Patent Document 3: Applied Physics Letters, USA, 998, 72, p. 2660-2662) as a film The hole transport layer user, and the same effect as the OLED element can be published. In recent years, a charge transporting varnish which has been found to dissolve a low molecular low aniline material or a low thiophene material in an organic solvent has been obtained, and the hole injection layer obtained from the varnish is inserted into the organic EL element to obtain a substrate. A report on the planarization effect of a substrate or the characteristics of an excellent EL element has been published (Patent Document 2: 曰本特开2 0 0 2 - 1 5 1 2 7 2, Patent Document 200800870 (2) 3: WO 2004-043117 Patent Document 4: WO2005-043962). Further, in the case of using a 1,4-benzodioxanesulfonic acid compound as an electron-accepting substance (Patent Document 5: WO 2005-000832), a report that the driving voltage of the OLED element can be lowered is disclosed.
但是,磺酸化合物,一般因相對於有機溶劑之溶解性 爲低,故在調製有機溶液之情形使用溶劑易被限定,而有 必要使N,N-二甲基乙醯胺,或N-甲基吡咯啶酮等溶解力 高的高極性有機溶劑,以高比率使用。使高極性有機溶劑 含有高比率之有機溶液,會有對噴墨塗佈裝置之一部份, 或對形成於基板上之絕緣膜及隔壁等有機構造物產生損害 之情形。 而且,磺酸化合物,因爲高極性故因二氧化矽凝膠柱 層析術之精製,因分飽萃取(separatory extraction),及 水洗等操作所致鹽類之除去則有困難。 另一方面,磺酸酯化合物,相對於各種有機溶劑之溶 解性高,由於加熱或化學作用等外在刺激而以有機強酸發 生之材料爲周知。 由於加熱使磺酸發生之化合物之具體例方面,有磺酸 環己酯等之報告被發表(非專利文獻 4:Chemische Berichte,德國,1 957 年,90 卷,p.585-592),近年來, 此磺酸酯,在所謂熱酸增生劑(proliferatoO之槪念中廣受 矚目(專利文獻5:日本特開平7- 1 344 1 6,非專利文獻5:機 能材料,日本,2004年,24卷,p.72-82)。 但是,尤其是,在芳香族二磺酸等電子缺乏性之芳香 -5- 200800870 (3) 環作取代之磺酸酯,與些許熱,或水,鹼性物質等之反應 所致分解易於產生,而穩定性高的磺酸酯化合物之創新爲 所期望。However, since the sulfonic acid compound is generally low in solubility with respect to an organic solvent, it is easy to use a solvent in the case of preparing an organic solution, and it is necessary to make N,N-dimethylacetamide, or N-A. A highly polar organic solvent having a high solubility such as pyrrolidone is used at a high ratio. When the high-polarity organic solvent contains a high ratio of the organic solution, there is a case where a part of the inkjet coating device or the organic structure such as the insulating film and the partition formed on the substrate is damaged. Further, since the sulfonic acid compound is highly polar, it is difficult to remove salts due to separatory extraction and washing operations due to refining of cerium oxide gel column chromatography. On the other hand, a sulfonate compound is highly soluble in various organic solvents, and a material which is generated by an organic strong acid due to external stimulation such as heating or chemical action is known. A report on the occurrence of a compound in which a sulfonic acid is generated by heating, a report such as cyclohexyl sulfonate has been published (Non-Patent Document 4: Chemische Berichte, Germany, 957, 90, p. 585-592), in recent years. In addition, this sulfonate is widely recognized in the so-called thermal acid proliferator (proliferatoO) (Patent Document 5: Japanese Patent Laid-Open No. Hei 7- 344 1 6, Non-Patent Document 5: Functional Materials, Japan, 2004, Volume 24, p. 72-82). However, especially in the case of aromatic disulfonic acid and other electron-deficient aromatics -5 - 200800870 (3) ring substituted sulfonate, with some heat, or water, alkali Decomposition due to the reaction of a substance or the like is apt to occur, and innovation of a highly stable sulfonate compound is desirable.
專利文獻1 :日本特開平3 -273 087號公報 專利文獻2:日本特開2002-1 5 1 272號公報 專利文獻3:國際公開第2004/043 1 1 7號摘要 專利文獻4:國際公開第2005/043 962號摘要 專利文獻5:國際公開第20〇5/0 0 0 832號摘要 非專利文獻 l:Applied Physics Letters,美國,1996 年,69 卷,ρ·2160-2162 非專利文獻 2:Nature,英國,1992年,第 3 5 7卷, p.477-479 非專利文獻 3:Applied Physics Letters 美國,1998 年,72 卷,ρ·2660-26 6 2 非專利文獻 4: Chemische Berichte,德國,,1957 年,90 卷,p.585-592 非專利文獻5 :機能材料,日本,2 0 0 4年,2 4卷, p.72-82 【發明內容】 發明欲解決之課題 本發明係鑑於此種情事而完成者,其目的爲提供/ 種,具有高穩定性,同時,相對於廣範圍之有機溶劑具有 高溶解性,故易於形成均一溶液,在適用於OLED元件之 200800870 (4) 情形可實現優異元件特性之,作爲電子接受性物質或熱酸 發生劑爲恰當的磺酸酯化合物。 解決課題之手段Patent Document 1: Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Abstract Patent Publication No. 2005/043 No. 962: International Publication No. 20/5 0 0 832 Abstract Non-Patent Document 1: Applied Physics Letters, USA, 1996, 69, p. 2160-2162 Non-Patent Document 2: Nature, UK, 1992, Vol. 3 5.7, p. 477-479 Non-Patent Document 3: Applied Physics Letters USA, 1998, Vol. 72, ρ·2660-26 6 2 Non-Patent Document 4: Chemische Berichte, Germany , 1957, 90, p. 585-592 Non-Patent Document 5: Functional Materials, Japan, 2004, 254, p. 72-82 [Invention] The present invention is to solve the problems of the present invention. In view of such circumstances, the object is to provide/species, has high stability, and at the same time, has high solubility with respect to a wide range of organic solvents, so that it is easy to form a uniform solution, which is suitable for OLED components 200800870 (4) The situation can achieve excellent component characteristics, as an electron accepting substance or Acid generator to an appropriate sulfonate compound. Means of solving problems
本發明人等,爲達成上述目的經戮力檢討一再重複試 驗之結果,首先發現具有於酯取代基與硫原子配位而得原 子的磺酸酯化合物,藉由因該原子之配位所致環狀錯合物 之形成,使得磺酸酯中硫原子之電子密度提高因而阻礙該 化合物合成時水或鹼性物質所致副反應,同時,阻礙熱分 解反應而顯示高穩定性,可使通常爲困難之磺酸酯化合物 之合成及精製容易進行者,及此磺酸酯化合物相對於廣範 圍之低極性溶劑顯示高溶解性者。進而首先發現,將此磺 酸酯化合物成膜爲薄膜後,加上加熱等之外在刺激下,可 作用爲良好的電子接受性物質,可發揮高電荷輸送性,同 時,首先發現在將此薄膜作爲0 LED元件之電洞注入層使 用之情形,可使元件之低驅動電壓爲可行,因而完成本發 明。 亦即,本發明,係提供: [1]一種式(1)所示之磺酸酯化合物, [化1]The inventors of the present invention, in order to achieve the above object, have repeatedly reviewed the results of repeated tests, and first discovered that a sulfonate compound having an atom at a position in which an ester substituent is coordinated to a sulfur atom is caused by coordination of the atom. The formation of a cyclic complex compound increases the electron density of the sulfur atom in the sulfonic acid ester, thereby hindering the side reaction caused by water or a basic substance in the synthesis of the compound, and at the same time hinders the thermal decomposition reaction and exhibits high stability, which can usually be It is easy to carry out the synthesis and purification of a difficult sulfonate compound, and the sulfonate compound exhibits high solubility with respect to a wide range of low polar solvents. Furthermore, it has been found that the sulfonate compound is formed into a film, and after being stimulated, it can act as a good electron-accepting substance under stimulation, and exhibits high charge transportability, and is first discovered. In the case where the film is used as a hole injection layer of a 0 LED element, a low driving voltage of the element can be made feasible, and thus the present invention has been completed. That is, the present invention provides: [1] a sulfonate compound represented by the formula (1), [Chemical Formula 1]
AA
200800870 (5) (式中’ A示取代或非取代之一價烴基,X示取代或 非取代之二價烴基,Y示0,s,或取代或者非取代之2 價M S Z示氫原子或取代或者非取代之一價烴基)。 Μ申請專利範圍第i項之磺酸酯化合物,其爲式 (2)所示者,200800870 (5) (wherein A represents a substituted or unsubstituted one-valent hydrocarbon group, X represents a substituted or unsubstituted divalent hydrocarbon group, Y represents 0, s, or a substituted or unsubstituted 2 valence MSZ represents a hydrogen atom or a substitution Or an unsubstituted one-valent hydrocarbon group). Μ Applying the sulfonate compound of item i of the patent scope, which is represented by formula (2),
(式中,Ri〜R4係各自獨立,示氫原子,汫取代或者 取代之〜懷烴基或鹵原子,A,Z同前)。(wherein, Ri to R4 are each independently represented by a hydrogen atom, hydrazine is substituted or substituted with a whey hydrocarbon group or a halogen atom, and A and Z are the same as before).
[3 ]如申請專利範圍第1或2項之磺酸酯化合物’其 中該A係取代或非取代之芳香環。 [4]〜種式(3)或式(4)所示之磺酸酯化合物。[3] A sulfonate compound as claimed in claim 1 or 2 wherein the A is a substituted or unsubstituted aromatic ring. [4] A sulfonate compound represented by the formula (3) or the formula (4).
8- 200800870 (6) (式中,A’示以(S03H)m,X·及(S03-X-Y-Z)n,所取代之 烴基,X示取代或非取代之二價烴基,γ示〇,S或取代 或者非取代之2價胺基,Z示氫原子或任意之一價烴基X’ 示Ο,S或NH,B示取代或者非取代之烴基,1,3,5-三哄 基,或取代或者非取代之式(5)或者(6) [化4]8- 200800870 (6) (wherein A' is represented by (S03H)m, X· and (S03-XYZ)n, substituted hydrocarbyl group, X represents a substituted or unsubstituted divalent hydrocarbon group, γ 〇, S Or a substituted or unsubstituted divalent amine group, Z represents a hydrogen atom or an arbitrary monovalent hydrocarbon group X' Ο, S or NH, B represents a substituted or unsubstituted hydrocarbon group, 1,3,5-trimethyl, or Substituted or unsubstituted formula (5) or (6) [Chemical 4]
所示之基(式中,W1及W2係各自獨立,示〇,s, s(0)基,S(〇2)基,或有非取代或者取代基鍵結之N,Si, P,P(〇)基),q示B與X’之鍵結數,爲滿足ISq之整 數,r示重覆單位數’爲滿足之整數,m爲〇以上之 整數,η1爲1以上之整數,n2爲1以上之整數。此外, ni+m在式(3)中可滿足A’爲容許之取代數以下,n2 + m在 式(4)中可滿足A’爲容許之取代數以下)。 [5]—種式(7)或式(8)所示之確酸酯化合物。 [化 5] ^The group shown (wherein W1 and W2 are each independently, 〇, s, s(0), S(〇2), or N, Si, P, P having an unsubstituted or substituted bond (〇) base), q indicates the number of bonds of B and X', and is an integer satisfying ISq, r indicates that the number of repeated units is 'the integer that satisfies, m is an integer greater than 〇, and η1 is an integer of 1 or more, n2 It is an integer of 1 or more. Further, ni + m satisfies A' in the formula (3) as the allowable substitution number, and n2 + m satisfies A' in the formula (4) as the allowable substitution number or less). [5] - a certain acid ester compound represented by the formula (7) or the formula (8). [化5]^
A" I o=s=o I OH ⑻ -9- 200800870 (7) (式中,W示取代或非取代之3價烴基A”示取代或者 非取代之2價芳香環基或單鍵’ x示取代或非取代之二價 烴基,γ示〇,S,或取代或者非取代之2價胺基,z示 氫原子或任意之一價烴基,3示2〜100000之整數,j 〜1 00 000之整數,U示1〜1 00000之整數,t + u爲滿足2 ~ 100000) 〇 [6 ]如申請專利範圍第5項之磺酸酯化合物,其爲g (9)或式(10)所示。 [化6]A" I o=s=o I OH (8) -9- 200800870 (7) (wherein W is a substituted or unsubstituted trivalent hydrocarbon group A) means a substituted or unsubstituted divalent aromatic ring group or a single bond 'x a substituted or unsubstituted divalent hydrocarbon group, γ 〇, S, or a substituted or unsubstituted divalent amine group, z represents a hydrogen atom or an arbitrary monovalent hydrocarbon group, 3 represents an integer of 2 to 100,000, j 〜1 00 An integer of 000, U represents an integer of 1 to 1 00000, and t + u is 2 to 100000) 〇 [6 ] The sulfonate compound of claim 5, which is g (9) or (10) Shown. [Chem. 6]
(式中,R5〜R7係各自獨立,示氫原子,非取代或者 取代之一價烴基,或鹵原子,A,,,X,Y,Z,s,t及u同 前)。 [7] 如申請專利範圍第5或6項之磺酸酯化合物,其 中數平均分子量爲5000〜loooooo。 [8] 如申請專利範圍第4項之磺酸酯化合物,其中該 m爲0。 -10- 200800870 (8) [9] 一種如申請專利範圍第4項之磺酸酯化合物所成 電子接受性物質。 [10] —種如申請專利範圍第1〜8項中任1項之磺酸 酯化合物所成酸發生劑。 [1 1]一種含有如申請專利範圍第1〜8項中任1項之 磺酸酯化合物之電荷輸送性清漆。(wherein R5 to R7 are each independently a hydrogen atom, an unsubstituted or substituted one-valent hydrocarbon group, or a halogen atom, A,, X, Y, Z, s, t and u are the same as before). [7] The sulfonate compound of claim 5 or 6, wherein the number average molecular weight is 5000~loooooo. [8] The sulfonate compound according to claim 4, wherein the m is 0. -10- 200800870 (8) [9] An electron accepting substance which is a sulfonate compound as disclosed in claim 4 of the patent application. [10] An acid generator for a sulfonate compound according to any one of claims 1 to 8. [1 1] A charge transporting varnish containing a sulfonate compound according to any one of claims 1 to 8.
[12]—種含有如申請專利範圍第1〜8項中任1項之磺 酸酯化合物之電荷輸送性薄膜。 [1 3 ] —種由如申請專利範圍第1 1項之電荷輸送性清 漆所得電荷輸送性薄膜。 [14] 一種電荷輸送性薄膜之製造方法,其特徵爲, 將如申請專利範圍第1 1項之電荷輸送性清漆塗佈於基材 上,進行加熱者。 [15] —種具備如申請專利範圍第12或13項之電荷輸 送性薄膜的有機電致發光元件。 [16] —種式(1)[12] A charge transporting film containing a sulfonate compound according to any one of claims 1 to 8. [1 3 ] A charge transporting film obtained from the charge transporting varnish of claim 11 of the patent application. [14] A method for producing a charge transporting film, which is characterized in that a charge transporting varnish according to claim 1 of the patent application is applied to a substrate and heated. [15] An organic electroluminescence device having a charge transporting film as disclosed in claim 12 or 13. [16] —Formula (1)
⑴ (式中,A,X,Y及Z同前) 所示磺酸酯化合物之製造方法,其特徵爲,使式(1 1 ) •11 - (9) 200800870 [化7](1) (wherein, A, X, Y and Z are the same as before) A method for producing a sulfonate compound, which is characterized by the formula (1 1 ) • 11 - (9) 200800870 [Chem. 7]
AA
II
〇=S=0 (li) OH (式中,A示取代或非取代之一價烴基)所示之磺酸化 合物與鹼反應,衍生爲式(12) [化8]〇 = S = 0 (li) OH (wherein A represents a substituted or unsubstituted one-valent hydrocarbon group) a sulfonic acid compound is reacted with a base to give a formula (12) [Chemical 8]
AA
I 0=S=0 (12) όν (式中,Α同前,V+示鈉離子,鉀離子,吡啶鹽 (pyridinium)離子或第4級銨離子), 所示之磺酸鹽化合物,將此磺酸鹽化合物與鹵化試藥 反應,衍生爲式(13),I 0 = S = 0 (12) ό ν (wherein, the same as before, V + shows sodium ion, potassium ion, pyridinium ion or fourth-order ammonium ion), the sulfonate compound shown, The sulfonate compound is reacted with a halogenated reagent to be derivatized as formula (13).
[化9][Chemistry 9]
AA
I 0=S=0 (13)I 0=S=0 (13)
W (式中,A同前,W示鹵原子), 所示之磺醯鹵化合物,將此磺醯鹵化合物與式(1 4) [化 10] (14)W (wherein A is the same as before, W is a halogen atom), the sulfonium halide compound is shown, and the sulfonium halide compound is represented by the formula (14) [10] (14)
HO-X-Y-Z -12- 200800870 (10) (式中,x示取代或非取代之二價烴基,Y示ο,s, 或取代或者非取代之2價胺基,z示氫原子或取代或者非 取代之一價烴基)。 所示之醇化合物反應者。 發明效果HO-XYZ -12- 200800870 (10) (wherein x represents a substituted or unsubstituted divalent hydrocarbon group, Y represents ο, s, or a substituted or unsubstituted divalent amine group, z represents a hydrogen atom or a substitution or a non- Substituting a monovalent hydrocarbon group). The alcohol compound shown is the reactant. Effect of the invention
本發明之磺酸酯化合物,相對於熱或水爲穩定性高, 而相對於含低極性溶劑之廣範圍有機溶劑則顯示高溶解 性,故即使使用低極性溶劑,或使高極性溶劑之比率降 低,亦可調製電荷輸送性清漆。 如此一來,本發明之磺酸酯化合物,與習知之磺酸化 合物比較因作爲電荷輸送性清漆之情形之適用溶劑寬廣, 故具有高平坦性之非晶質固體薄膜之製作可更爲簡便。 又,由本發明之磺酸酯化合物所得之薄膜,因顯示高 電荷輸送性,故在作爲電洞注入層或電洞輸送層使用之情 形可使有機EL元件之驅動電壓降低。在利用此薄膜之高 平坦性及高電荷輸送性,於太陽電池之電洞輸送層,燃料 電池用電極,電容器電極保護膜,防靜電膜之應用亦爲可 進而,本發明之磺酸酯化合物,因具有作用爲熱酸發 生劑或陽離子傳導性物質之機能,故可應用於光阻補助材 料,離子傳導膜,固體電解質。 -13- 200800870 (11) 實施發明之最佳型態 以下,就本發明進而詳細說明。 本發明之第1磺酸酯化合物,係下述式(i)所示。 W 匕 12]The sulfonate compound of the present invention has high stability with respect to heat or water, and exhibits high solubility with respect to a wide range of organic solvents containing a low polar solvent, so even if a low polar solvent is used, or a ratio of a highly polar solvent is used Lowering, it is also possible to modulate the charge transport varnish. As a result, the sulfonate compound of the present invention is more suitable for use as a charge transporting varnish than the conventional sulfonate compound, so that the amorphous solid film having high flatness can be produced more easily. Further, since the film obtained from the sulfonate compound of the present invention exhibits high charge transportability, it can be used as a hole injection layer or a hole transport layer to lower the driving voltage of the organic EL element. In the use of the high flatness and high charge transportability of the film, the hole transport layer of the solar cell, the electrode for a fuel cell, the capacitor electrode protective film, and the antistatic film can be further used, the sulfonate compound of the present invention. Because it has the function of a thermal acid generator or a cationic conductive substance, it can be applied to a photoresist auxiliary material, an ion conductive membrane, and a solid electrolyte. -13- 200800870 (11) BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail. The first sulfonate compound of the present invention is represented by the following formula (i). W 匕 12]
式(1)中,A示取代或非取代之一價烴基,其具體例 方面’可例舉甲基’乙基,正丙基,異丙基,正丁基,異 丁基’三級丁基,正己基,正辛基,2-乙基己基,癸基等 之烷基;環戊基,環己基等之環烷基;雙環己基等之雙環 ίτπ基,乙細基’ 1 -丙嫌基’ 2 -丙細基’異丙嫌基,1 -甲基_ 2-丙烯基,1或2或3-丁烯基,己烯基等之鏈烯基;苯 基,甲苄基(xylyl ),甲苯基,聯苯基,萘基等之芳香 環基(芳基);苄基,苯基乙基,苯基環己基等之芳烷基, 或該等基之氫原子之一部份或全部進而可例舉羥基,胺 基,矽烷醇基,硫醇基,羧基,磺酸酯基,磷酸基,磷酸 酯基,酯基,硫代酯基,醯胺基,硝基,一價烴基,有機 氧基,有機胺基,有機單矽烷基,有機硫基,醯基,礪 基,鹵原子等所取代之物。 在此,鹵原子方面,可例舉氟,氯,溴,碘原子。 有機氧基之具體例方面,可例舉烷氧基,鏈烯氧基, 芳基氧基等,該等烷基,鏈烯基及芳基方面,可例舉與上 述例示之取代基相同之物。 -14-In the formula (1), A represents a substituted or unsubstituted one-valent hydrocarbon group, and specific examples thereof may be exemplified by methyl 'ethyl, n-propyl, isopropyl, n-butyl, isobutyl 'tertiary An alkyl group such as n-hexyl, n-octyl, 2-ethylhexyl or decyl; a cycloalkyl group such as cyclopentyl or cyclohexyl; a bicyclo ίτπ group such as a bicyclohexyl group; Alkyl 2 -propionyl 'isopropyl iodide, 1-methyl-2-propenyl, 1 or 2 or 3-butenyl, alkenyl and the like alkenyl; phenyl, methylbenzyl (xylyl An aromatic ring group (aryl group) such as a tolyl group, a biphenyl group or a naphthyl group; an aralkyl group such as a benzyl group, a phenylethyl group or a phenylcyclohexyl group; or a part of a hydrogen atom of the group Or all further exemplified by a hydroxyl group, an amine group, a stanol group, a thiol group, a carboxyl group, a sulfonate group, a phosphate group, a phosphate group, an ester group, a thioester group, a decyl group, a nitro group, a monovalent group A hydrocarbon group, an organic oxy group, an organic amine group, an organic monoalkyl group, an organic thio group, a fluorenyl group, a fluorenyl group, a halogen atom or the like. Here, examples of the halogen atom include fluorine, chlorine, bromine, and iodine atoms. Specific examples of the organooxy group include an alkoxy group, an alkenyloxy group, an aryloxy group, etc., and the alkyl group, the alkenyl group and the aryl group may be the same as the above-exemplified substituents. Things. -14-
200800870 (12) 有機胺基之具體例方面,可例舉甲基胺基 基,丙基胺基,丁基胺基,戊基胺基,己基胺基 基,辛基胺基,壬基胺基,癸基胺基,月桂基膜 基胺基;二甲基胺基,二乙基胺基,二丙基胺基 胺基,二戊基胺基,二己基胺基,二庚基胺基, 基,二壬基胺基,二癸基胺基等之二烷基胺基; 基等之二環烷基胺基;嗎啉基(morpholino)等 有機單矽烷基之具體例方面,可例舉三甲 基,三乙基單矽烷基,三丙基單矽烷基,三丁 基,三戊基單矽烷基,三己基單矽烷基,戊基二 烷基,己基二甲基單矽烷基,辛基二甲基單矽娱 二甲基單矽烷基等。 有機硫基之具體例方面,可例舉甲基硫基 基’丙基硫基’丁基硫基’戊基硫基’己基硫· 基,辛基硫基,壬基硫基,癸基硫基,月桂基攝 基硫基。 醯基之具體例方面,可例舉甲醯基,乙醯 基,丁醯基,異丁醯基,戊醯基,異戊醯基,苯 此外,一價烴基,有機氧基,有機胺基,, 有機單矽烷基,有機硫基及醯基中碳數,並無裝 一般爲碳數1〜20,較佳爲1〜8。 上述各取代基中以氟,磺酸基,取代或者男 機氧基,烷基,有機單矽烷基更佳。 此外,非取代係指鍵結有氫原子之意。又, ,乙基胺 ,庚基胺 基等之烷 ,二丁基 二辛基胺 環己基胺 〇 基單矽烷 基單矽烷 甲基單矽 基,癸基 ^乙基硫 ’庚基硫 基等之烷 基,丙醯 醯基等。 機胺基, 別限定, 取代之有 以上之取 -15- 200800870 (13) 代基中,取代基彼此之間可連結而含有爲環狀之部分。 在考慮到使本發明之磺酸酯化合物應用於電子接受性 物質時,A方面,尤以取代或非取代之芳香環基爲佳,取 代或非取代之苯基,萘基,蒽基等爲恰當,取代或非取代 之苯基,萘基爲最適。 式(1)中,X示取代或非取代之二價烴基,其具體例 方面,可例舉取代或非取代之碳數1〜5之烷撐基,碳數 φ 1〜2烷撐基氧碳數1〜2烷撐基,碳數1〜2烷撐基硫碳 數1〜2烷撐基,碳數1〜2烷撐基羰碳數1〜2烷撐基 等,Y在磺酸酯中以易於形成S原子,與如下述式般之環 " 狀錯合物之基爲佳。此外,取代基方面,可例舉與上述同 樣之物。200800870 (12) Specific examples of the organic amine group may, for example, be a methylamino group, a propylamino group, a butylamino group, a pentylamino group, a hexylamino group, an octylamino group or a decylamino group. , mercaptoamine, lauryl-based amine; dimethylamino, diethylamino, dipropylaminoamino, dipentylamino, dihexylamino, diheptylamino, Specific examples of the dialkylamino group such as a dimethyl group, a dialkylamino group, a dicycloalkylamino group, a dicycloalkylamino group, and the like, and an organic monoalkylene group such as a morpholino may be exemplified. Trimethyl, triethylmonodecyl, tripropylmonodecyl, tributyl, tripentylmonodecyl, trihexylmonodecyl, pentyldialkyl, hexyldimethylmonodecyl, xin Dimethyl dimethyl phthalocyanine dimethyl monodecyl alkyl and the like. Specific examples of the organic sulfur group may, for example, be a methylthio 'propylthio' butylthio 'pentylthio-hexylthio group, an octylthio group, a mercaptothio group, a mercapto sulfur. Base, lauryl thiol. Specific examples of the fluorenyl group include a methyl group, an ethyl group, a butyl group, a butyl group, an isobutyl group, a pentamidine group, an isovaleryl group, a benzene group, a monovalent hydrocarbon group, an organic oxy group, an organic amine group, and an organic single. The carbon number in the alkylene group, the organic sulfur group and the fluorenyl group is not usually from 1 to 20, preferably from 1 to 8. Among the above substituents, a fluorine, a sulfonic acid group, or a male oxy group, an alkyl group or an organic monodecyl group is more preferable. Further, unsubstituted means that a hydrogen atom is bonded to the bond. Further, an alkylamine, an alkylene such as heptylamine, a dibutyldioctylamine cyclohexylamine fluorenyl monodecyl monodecanemethylmonodecyl group, a fluorenyl group, an ethylthio 'heptylthio group, etc. An alkyl group, a propyl group, and the like. The amine group is not limited, and the substitution is the same. -15- 200800870 (13) In the substituent, the substituents are linked to each other and contain a cyclic moiety. In view of the application of the sulfonate compound of the present invention to an electron accepting substance, in the case of A, a substituted or unsubstituted aromatic ring group is preferred, and a substituted or unsubstituted phenyl group, a naphthyl group, a decyl group or the like is Suitable, substituted or unsubstituted phenyl, naphthyl is the most suitable. In the formula (1), X represents a substituted or unsubstituted divalent hydrocarbon group, and specific examples thereof may be a substituted or unsubstituted alkylene group having 1 to 5 carbon atoms and a carbon number of φ 1 to 2 alkylene oxide. Carbon number 1 to 2 alkylene group, carbon number 1 to 2 alkylene group sulfur carbon number 1 to 2 alkylene group, carbon number 1 to 2 alkylene carbonyl carbon number 1 to 2 alkylene group, etc. Y in sulfonic acid In the ester, it is preferred to form an S atom, and a group of a ring-like complex such as the following formula is preferred. Further, as the substituent, the same as described above can be exemplified.
(式中,A,X,Y’及Z同前。) 尤以主鏈之構成原子數爲2或3時,磺酸酯化合物 (1) ’因可形成5員環或6員環錯合物,故乂以取代或非 取代之乙烯基,三亞甲基,亞甲基氧亞甲基,亞甲基硫亞 甲基等爲恰當。 式(1)中,Y若爲與磺酸酯化合物之S原子可形成環 狀錯合物之基則並無特別限定,以Ο,S,或取代或者非 (14) 200800870 取代之2價胺基爲恰當,尤以〇爲佳。 在此,2價取代胺基方面,可例舉-N(CH3)-, -N(C2H5)-,-N(C3H7)-等。 尤其是,就可容易形成環狀錯合物之點,X爲取代或 非取代之乙烯基,Y爲Ο之下述式(2)所示之化合物,或 下述式(2 J所示之化合物爲恰當。 [化 14](wherein, A, X, Y' and Z are the same as before.) In particular, when the number of constituent atoms of the main chain is 2 or 3, the sulfonate compound (1) 'is a 5-membered ring or a 6-membered ring Therefore, it is appropriate to substitute or unsubstituted vinyl, trimethylene, methyleneoxymethylene, methylenesulfenyl, and the like. In the formula (1), Y is not particularly limited as long as it forms a cyclic complex with the S atom of the sulfonate compound, and is a divalent amine substituted by hydrazine, S, or substituted or not (14) 200800870. The basis is appropriate, especially the best. Here, the divalent substituted amine group may, for example, be -N(CH3)-, -N(C2H5)-, -N(C3H7)- or the like. In particular, a point where a cyclic complex compound can be easily formed, X is a substituted or unsubstituted vinyl group, Y is a compound represented by the following formula (2), or a formula represented by the following formula (2J) The compound is appropriate. [Chem. 14]
[化 15] R2 R3[Chemical 15] R2 R3
(式中,A2示可具有取代基之二價烴基)。 式(2)及(2,)中,R1〜R4係各自獨立,示氫原子,非取 代或者取代之一價烴基,或鹵原子,其中以氫原子;甲 基’乙基,丙基’丁基等碳數1〜6之烷基爲佳。 -17- 200800870 (15) 此外’其他之一價烴基之具體例係如上述。 式(1),(2)及(2’)中,Z若爲氫原子或取代或者非取代 之一價烴基,並無特別限制。一價烴基之具體例則如上 述。較佳爲,甲基,乙基,正丙基。 式(2’)中,A2爲可具有取代基之二價烴基,例如可具 有取代基之烷撐基(亞甲基,乙烯基,三亞甲基等),可具 有取代基之伸芳基(伸苯基,伸萘基,聯伸苯基等)等。取 代基方面,可例舉羥基,胺基,矽烷醇基,硫醇基,羧 基,磺酸酯基,磷酸基,磷酸酯基,酯基,硫酯基,醯胺 基,硝基,一價烴基,有機氧基,有機胺基,有機單矽烷 基,有機硫基,醯基,砸基,鹵原子等所取代之物。 式(1)所示化合物之製造法方面,可例舉下述方法, 但並非限制於該等。(wherein A2 represents a divalent hydrocarbon group which may have a substituent). In the formulae (2) and (2,), R1 to R4 are each independently a hydrogen atom, an unsubstituted or substituted one-valent hydrocarbon group, or a halogen atom, wherein a hydrogen atom; a methyl 'ethyl group, a propyl group' An alkyl group having 1 to 6 carbon atoms is preferred. -17- 200800870 (15) Further, specific examples of the other one-valent hydrocarbon group are as described above. In the formulae (1), (2) and (2'), Z is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group, and is not particularly limited. Specific examples of the monovalent hydrocarbon group are as described above. Preferred is methyl, ethyl or n-propyl. In the formula (2'), A2 is a divalent hydrocarbon group which may have a substituent, for example, an alkylene group (methylene group, vinyl group, trimethylene group, etc.) which may have a substituent, and an extended aryl group which may have a substituent ( Stretching phenyl, stretching naphthyl, stretching phenyl, etc.). The substituent may, for example, be a hydroxyl group, an amine group, a stanol group, a thiol group, a carboxyl group, a sulfonate group, a phosphate group, a phosphate group, an ester group, a thioester group, a decyl group, a nitro group, a monovalent group. A hydrocarbon group, an organic oxy group, an organic amine group, an organic monoalkyl group, an organic thio group, a fluorenyl group, a fluorenyl group, a halogen atom or the like. The method for producing the compound represented by the formula (1) may, for example, be the following method, but is not limited thereto.
亦即,使式(1 1)所示之磺酸化合物,與鹼反應,衍生 爲式(1 2)所示之磺酸鹽化合物,將此磺酸鹽化合物與鹵化 試藥反應,衍生爲式(13)所示之磺醯鹵化合物,將此磺醯 鹵化合物與以式(14)所示之醇化合物反應,可獲得式(1)之 磺酸酯化合物。此外,式(1 1)所示之磺酸化合物,可使用 市售品,又可因應需要使用既知方法(新實驗化學講座 14 有機化合物之合成與反應III,P.1773〜1784)等來進行合 成。 200800870 (16) [化 16] 鹼That is, the sulfonic acid compound represented by the formula (1 1) is reacted with a base to be derivatized into a sulfonate compound represented by the formula (1 2), and the sulfonate compound is reacted with a halogenated reagent to be derivatized. The sulfonium halide compound shown in (13), which is reacted with an alcohol compound represented by the formula (14) to obtain a sulfonate compound of the formula (1). Further, the sulfonic acid compound represented by the formula (1 1) may be a commercially available product, or may be subjected to a known method (New Experimental Chemistry Lecture 14 Organic Compound Synthesis and Reaction III, P.1773 to 1784), etc., as needed. synthesis. 200800870 (16) [Chem. 16] Alkali
AA
AA
I o=s=oI o=s=o
II
OHOH
(式中,A,X,Y,及Z同前。V+示鈉離子,鉀離 子,吡啶鹽(pyridinium)離子或第4級銨離子,W爲鹵 " 原子)。(wherein, A, X, Y, and Z are the same as before. V + is a sodium ion, a potassium ion, a pyridinium ion or a fourth-order ammonium ion, and W is a halogen " atom).
將式(11)所示之磺酸化合物,與鹼反應,衍生爲式 (12)所示之磺酸鹽化合物之步驟所用之鹼方面,可例舉氫 化鈉,氫化鉀,碳酸鈉,碳酸鉀,碳酸氫鈉,吡啶,嘧 啶,三乙基胺等之各種鹼,而在使相對於磺酸鹽化合物 (11)之有機溶劑之溶解性提高,且對其次步驟之反應無所 影響之鹼方面,以吡啶,嘧啶,三乙基胺等之胺爲佳,尤 以吡啶爲最適。 , 鹼之使用量,相對於磺酸化合物(1 1 )若爲1倍莫耳以 上則無限定,但以1〜5倍莫耳爲恰當。 反應溶劑方面,以可溶解磺酸化合物(11)之物爲佳, 以水,N-甲基吡咯啶酮(NMP),二甲基咪唑烷酮 (imidazolidinone ) (DMI),乙酸酐,甲醇,乙醇,異丙 醇,吡啶等爲恰當。 -19- 200800870 (17) 反應溫度並無特別限定,以0〜1 5 0 °C爲佳。 反應完成後,係使用溶劑之減壓餾除,分液萃取操 作,再沈澱,再結晶等之常法進行精製,可獲得純粹的磺 酸鹽化合物。 使式(12)所示之磺酸鹽化合物與鹵化試藥反應,衍生 爲式(13)所示之磺醯鹵化合物之步驟所用之鹵化試藥方 面,可例舉氯化亞硫醯,氧氯化磷 (PHOSPHORUS OXYCHLORIDE),氯化磷(V)等之幽化試藥,而以氯化亞 硫醯爲恰當。 鹵化試藥之使用量,相對於磺酸鹽化合物若爲1倍莫 耳以上則無限定,而相對於磺酸鹽化合物於質量比使用2 〜1 0倍量爲佳。The base used for the step of reacting the sulfonic acid compound represented by the formula (11) with a base to be derivatized to the sulfonate compound represented by the formula (12) may, for example, be sodium hydride, potassium hydride, sodium carbonate or potassium carbonate. , various bases such as sodium hydrogencarbonate, pyridine, pyrimidine, triethylamine, etc., and in terms of alkali which improves the solubility with respect to the organic solvent of the sulfonate compound (11) and which does not affect the reaction of the next step Preferably, an amine such as pyridine, pyrimidine or triethylamine is used, and pyridine is particularly preferred. The amount of the base to be used is not particularly limited as long as it is 1 time or more based on the sulfonic acid compound (1 1 ), but it is preferably 1 to 5 moles. In terms of the reaction solvent, it is preferred to dissolve the sulfonic acid compound (11), water, N-methylpyrrolidone (NMP), imidazolidinone (DMI), acetic anhydride, methanol, Ethanol, isopropanol, pyridine, etc. are appropriate. -19- 200800870 (17) The reaction temperature is not particularly limited, and is preferably 0 to 150 °C. After completion of the reaction, a pure sulfonate compound can be obtained by subjecting the solvent to distillation under reduced pressure, liquid separation and extraction, reprecipitation, recrystallization, and the like. The halogenated reagent used for the step of reacting the sulfonate compound represented by the formula (12) with a halogenated reagent to be derivatized into the sulfonium halide compound represented by the formula (13) may, for example, be sulfinium chloride and oxygen. Phosphorus chloride (PHOSPHORUS OXYCHLORIDE), phosphorus chloride (V) and other rejuvenation reagents, and ruthenium chloride is appropriate. The amount of the halogenated reagent to be used is not particularly limited as long as it is 1 time or more based on the sulfonate compound, and is preferably 2 to 10 times the mass ratio of the sulfonate compound.
反應溶劑方面,以不與鹵化試藥反應之溶劑爲佳,可 例舉氯仿,二氯乙烷,四氯化碳,己烷,庚烷等,而以無 溶劑爲恰當。此外,以無溶劑進行反應之情形,在反應完 成時以成爲均一系溶液之量以上使用鹵化試藥者爲佳。 反應溫度可爲0〜F50°c左右,而以20〜l〇〇°C,且, 以使用之鹵化試藥之沸點以下爲佳。 反應完成後,一般而言,係使減壓濃縮等所得粗生成 物用於次步驟。 將式(1 3 )所示之磺醯鹵化合物,與式(丨4)所示之醇化 合物反應之步驟中,可倂用鹼。 可使用之鹼方面,可例舉氫化鈉,吡啶,三乙基胺, 二異丙基乙基胺等,而以氫化鈉,吡啶,三乙基胺爲恰 -20- 200800870 (18) 當。 鹼之使用量,相對於磺醯鹵化合物(1 3)以使用1倍莫 耳〜溶劑量爲恰當。 反應溶劑方面,可使用各種有機溶劑,而以四氫呋 喃,二氯乙烷,吡啶爲恰當。 反應溫度並無特別限定,以〇〜80 °C爲恰當。 反應完成後,係使用減壓濃縮,分液萃取,水洗,再 沈澱,再結晶,層析術等之常法進行後處理,精製,可獲 得純粹的磺酸酯化合物。 此外,對所得之純粹的磺酸酯化合物實施熱處理等, 可導致高純度之磺酸化合物。 本發明之第2磺酸酯化合物係如下述式(3)或(4)所 不 ° [化 17]The solvent is preferably a solvent which does not react with the halogenated reagent, and examples thereof include chloroform, dichloroethane, carbon tetrachloride, hexane, heptane and the like, and the solvent-free is appropriate. Further, in the case where the reaction is carried out without a solvent, it is preferred to use a halogenated reagent in an amount greater than the amount of the homogeneous solution when the reaction is completed. The reaction temperature may be about 0 to F50 ° C, and is preferably 20 to 1 ° C, and preferably less than the boiling point of the halogenated reagent to be used. After completion of the reaction, in general, the resulting crude product obtained by concentration under reduced pressure is used in the next step. In the step of reacting the sulfonium halide compound represented by the formula (13) with the alcohol compound represented by the formula (?4), a base can be used. As the base which can be used, sodium hydride, pyridine, triethylamine, diisopropylethylamine and the like can be exemplified, and sodium hydride, pyridine and triethylamine are used as -20-200800870 (18). The amount of the base to be used is preferably from 1 to 2 moles to the amount of the solvent of the sulfonium halide compound (13). As the reaction solvent, various organic solvents can be used, and tetrahydrofuran, dichloroethane, and pyridine are suitable. The reaction temperature is not particularly limited, and is preferably ~80 °C. After completion of the reaction, a pure sulfonate compound can be obtained by post-treatment under reduced pressure, fractional extraction, water washing, reprecipitation, recrystallization, chromatography, and the like. Further, by subjecting the obtained pure sulfonate compound to heat treatment or the like, a high-purity sulfonic acid compound can be obtained. The second sulfonate compound of the present invention is not in the following formula (3) or (4).
式(3) ’(4)中,A,示以(s〇3H)m,X,及(s〇3-X_y_z) ni 所取代之烴基’此烴基可以(s〇3H)m,χ,及(s〇3H_z) n, 以外之取代基所取代。此種取代基方面,可例舉與以上述 取代或非取代之一價烴基所說明之取代基爲同樣之基。A, -21 - 200800870 (19) 之具體例方面,可例舉將上述A之氫原子取下,使該鍵 結變換成鍵結鍵,成爲多價之同樣烴基’就較恰當之烴基 亦爲同樣。 X’示,Ο,S或NH,尤以 〇爲恰當。式(3)中2個 X’,可互爲相同或相異。 此外,就X,Y,Z則與上述同。 又,B爲取代或者非取代之烴基,1,3,5-三哄基,或 取代或者非取代之下述式(5)或者(6)所示之基。 [化 18]In the formula (3) '(4), A, a hydrocarbon group substituted with (s〇3H)m, X, and (s〇3-X_y_z) ni 'this hydrocarbon group may be (s〇3H)m, χ, and (s〇3H_z) n, substituted with a substituent other than the substituent. The substituent may be the same as the substituent described for the above-mentioned substituted or unsubstituted one-valent hydrocarbon group. In a specific example of A, -21 - 200800870 (19), the hydrogen atom of the above A is removed, and the bond is converted into a bond bond to form a multivalent hydrocarbon group. same. X' shows, Ο, S or NH, especially 〇 is appropriate. The two X's in the formula (3) may be the same or different from each other. In addition, X, Y, and Z are the same as described above. Further, B is a substituted or unsubstituted hydrocarbon group, a 1,3,5-trimethyl group, or a substituted or unsubstituted group represented by the following formula (5) or (6). [Chem. 18]
(5) (式中,W1及W2係各自獨立,示〇,s,s(〇)基, s(〇2)基,或非取代或者取代基爲鍵結之N,Si,P,P(O) 基)。 在考慮到謀求上述式(3),(4)之化合物之耐久性提高及 電何輸送性提局時,B方面,以含有一個以上芳香環之2 價以上非取代或者取代之煙基,2價或者3價之1,3,5 -三 哄基,取代或者非取代之2價二苯基颯基爲佳,尤以2價 或者3價之取代或者非取代苄基,2價取代或者非取代對 亞一甲本基,2價或者3價之取代或者非取代萘基,2價 或者3價之1,3,5-三哄基,2價之取代或者非取代二苯基 颯基,2〜4丨貝之全氟聯苯基,2價之取代或者非取代2,2_ 雙((羥基丙氧基)苯基)丙基,取代或者非取代聚乙烯苄基 -22- 200800870 (20) 爲恰當。 m示,鍵結於A ’之磺酸基數,爲0以上之整數,而以 〇〜4爲佳,而在考慮到相對於式(3),(4)所示化合物之溶 劑之溶解性提高時則以〇〜2爲佳,在考慮到該化合物之 電子接受性之提高時,以1或2爲佳。 q示B與之鍵結數目,若滿足ISq之整數時,並 無特別限定,以2 S q爲佳。(5) (wherein W1 and W2 are each independently, 〇, s, s(〇), s(〇2), or unsubstituted or substituted N, Si, P, P ( O) base). In consideration of the improvement in durability and the improvement of the transportability of the compound of the above formulas (3) and (4), in the case of B, the unsubstituted or substituted nicotine containing two or more valences of one or more aromatic rings, 2 A valence or a trivalent 1,3,5-trimethylidene group, a substituted or unsubstituted divalent diphenyl fluorenyl group, particularly a divalent or trivalent substituted or unsubstituted benzyl group, a divalent substitution or a non-substituted Substituted for a sub-methyl group, a divalent or trivalent substituted or unsubstituted naphthyl group, a divalent or trivalent 1,3,5-trimethyl group, a divalent substituted or unsubstituted diphenyl fluorenyl group, 2 to 4 mussels perfluorobiphenyl, divalent substituted or unsubstituted 2,2_bis((hydroxypropoxy)phenyl)propyl, substituted or unsubstituted polyvinylbenzyl-22- 200800870 (20 ) is appropriate. m indicates that the number of sulfonic acid groups bonded to A ' is an integer of 0 or more, and preferably 〇~4, and the solubility of the solvent with respect to the compound represented by the formula (3) or (4) is considered to be improved. In the case of 〇~2, it is preferred to use 1 or 2 in consideration of an increase in the electron acceptability of the compound. q indicates the number of bonds with B. If the integer of ISq is satisfied, it is not particularly limited, and 2 S q is preferred.
r示重覆單位之數,若爲滿足l^r之整數,並無特別 限定,以2 S r爲佳。 η1爲1以上之整數,較佳爲1〜4之整數,n2爲1以 上之整數,較佳爲1〜4之整數,而均以1爲最適。此 外,nbm在式(3)中可滿足Α’爲容許之取代數以下,n2 + m 在式(4)中可滿足Α·爲容許的取代數以下。 式(3),(4)所示之磺酸酯化合物之製造方法方面,可 例舉例如以下之方法。 亦即,相對於使用上述製法等而製造之磺酸酯化合物 (15)或(16)之Χ’Η基,可使賦予上述Β之(交聯)試藥作用 而得。此時,反應之方法,並無特別限定,可使用例如一 般的親核(nucleophile)取代反應。r is the number of the repeated units, and is not particularly limited as long as it satisfies the integer of l^r, and 2 S r is preferable. Η1 is an integer of 1 or more, preferably an integer of 1 to 4, and n2 is an integer of 1 or more, preferably an integer of 1 to 4, and all of them are optimum. Further, in the formula (3), nbm satisfies Α' as an allowable substitution number or less, and n2 + m satisfies Α· as an allowable substitution number or less in the formula (4). The method for producing the sulfonate compound represented by the formulas (3) and (4) may, for example, be the following method. In other words, the sulfonate compound (15) or (16) which is produced by the above-mentioned production method or the like can be obtained by imparting a cross-linking reagent. In this case, the method of the reaction is not particularly limited, and for example, a general nucleophile substitution reaction can be used.
-23- 200800870 (21) 此種試藥方面,可例舉鹵原子,羥基,胺基,醒基, 羧基,酯基,或烷氧基所取代之烴化合物等,而如上述B 之說明所述,就可提高耐熱性,電荷輸送性,或相對於有 機溶劑之溶解性等之點,以含有一個以上芳香環之化合物 爲佳。-23- 200800870 (21) Examples of such a reagent include a halogen atom, a hydroxyl group, an amine group, a awake group, a carboxyl group, an ester group, or a hydrocarbon compound substituted with an alkoxy group, and the like, as described in the above B. In addition, it is preferable to improve the heat resistance, the charge transport property, or the solubility with respect to an organic solvent, and the compound containing one or more aromatic rings is preferable.
又,在使用含有2個以上鹵原子,羥基,胺基,醒 基,羧基,酯基,烷氧基等取代基之烴化合物等時,因該 化合物係作用爲交聯試藥,故可成爲具有交聯構造之化合 物。在使用具有q個以上反應性取代基(交聯部)之試藥, 使式(15)之化合物進行q量化之際,試藥之使用量,相對 於式(15)之化合物以Ι/q倍莫耳爲恰當。 在與磺酸酯化合物(15)或(16)之X’H基反應之試藥之 具體例方面,可例舉苯甲醛,苯甲酸,苯甲酸酯,1-萘 醛,2-萘醛,2,4,6-三甲氧基-1,3,5-三哄,雙(4-氟苯基) 楓,雙(4-氟-3-硝基苯基)颯,全氟聯苯基,2,2-雙(4-環氧 丙氧基苯基)丙烷,聚氯化乙烯苄基等。 在使磺酸酯化合物(15)或(16)與上述試藥反應之情 形,亦可使用觸媒。 觸媒方面,可例舉例如鋰,鉀,氫化鋰,氫化鈉,三 級丁氧基鋰,三級丁氧基鈉,三級丁氧基鉀,二異丙基醯 胺鋰,正丁基鋰,一級丁基鋰,三級丁基鋰,(lithium-hexamethy 1 disilazide?sodium-hexamethyl disilazide potassium-hexamethyl disilazide,氫氧化鋰,氫氧化鈉, 氫氧化鉀,氫氧化鋇,氧化鋇,碳酸鋰,碳酸鈉,碳酸 -24- 200800870 (22) 鉀,碳酸鉋,碳酸鈣,碳酸氫鈉,三乙基胺,二異丙基乙 基胺’四甲基乙烯二胺,三乙烯二胺,吡啶,二甲基胺基 吡啶,咪唑等之鹼;鹽酸,硫酸,五氧化二磷,氯化鋁 (III),三氟化硼二乙基醚錯合物,二氯化乙基鋁,氯化二 乙基鋁等之脫水縮合劑等,其中以使用氫化鈉,碳酸鈉, 碳酸鉀爲恰當。該等觸媒之使用量並無特別限制,相對於 式(1 5 )或式(1 6)之化合物以使用1 · 0〜i . 5倍莫耳爲佳。 反應溶劑’以非質子性極性有機溶劑爲佳,例如以 DMF,DMAc,NMP,DMI,DMSO,THF,二噁院等爲恰 當。具有複數個磺酸基之化合物相對於有機溶劑因溶解性 低,故在此情形,磺酸化合物之溶解能高,熱分解性低的 溶劑之DMI,NMP爲恰當。 反應溫度,通常,自-5 0 °C至使用之溶劑之沸點爲止 爲可行,而以〇〜140 °C之範圍爲佳。反應時間通常爲〇.1 〜1 0 0小時。In addition, when a hydrocarbon compound containing two or more substituents such as a halogen atom, a hydroxyl group, an amine group, a ketone group, a carboxyl group, an ester group or an alkoxy group is used, since the compound acts as a cross-linking reagent, it can be used. A compound having a crosslinked structure. When the compound of the formula (15) is subjected to q quantification using a reagent having q or more reactive substituents (crosslinking portion), the amount of the reagent used is Ι/q with respect to the compound of the formula (15). Double Moore is appropriate. Specific examples of the reagent for reacting with the X'H group of the sulfonate compound (15) or (16) may, for example, benzaldehyde, benzoic acid, benzoic acid ester, 1-naphthaldehyde or 2-naphthaldehyde. ,2,4,6-trimethoxy-1,3,5-triazine, bis(4-fluorophenyl) maple, bis(4-fluoro-3-nitrophenyl)fluorene, perfluorobiphenyl , 2,2-bis(4-glycidoxyphenyl)propane, polyvinyl chloride benzyl, and the like. A catalyst may also be used in the case where the sulfonate compound (15) or (16) is allowed to react with the above reagent. The catalyst may, for example, be lithium, potassium, lithium hydride, sodium hydride, lithium tertiary hydride, sodium trisodium butoxide, potassium tertiary hydride, lithium diisopropyl guanamine, n-butyl Lithium, primary butyl lithium, butyl lithium, (lithium-hexamethy 1 disilazide? sodium-hexamethyl disilazide potassium-hexamethyl disilazide, lithium hydroxide, sodium hydroxide, potassium hydroxide, barium hydroxide, cerium oxide, lithium carbonate , sodium carbonate, carbonic acid-24- 200800870 (22) potassium, carbonic acid planing, calcium carbonate, sodium hydrogencarbonate, triethylamine, diisopropylethylamine 'tetramethylethylenediamine, triethylenediamine, pyridine , dimethylaminopyridine, imidazole, etc.; hydrochloric acid, sulfuric acid, phosphorus pentoxide, aluminum (III) chloride, boron trifluoride diethyl ether complex, ethyl aluminum dichloride, chlorination A dehydrating condensing agent such as diethylaluminum or the like, wherein sodium hydride, sodium carbonate or potassium carbonate is used as appropriate. The amount of the catalyst used is not particularly limited, and is relative to the formula (15) or the formula (16). The compound is preferably used in an amount of 1 · 0 to i. 5 times Mo. The reaction solvent 'is aprotic polar organic The agent is preferably, for example, DMF, DMAc, NMP, DMI, DMSO, THF, dioxin, etc. The compound having a plurality of sulfonic acid groups is low in solubility relative to the organic solvent, so in this case, the sulfonic acid compound The DMI and NMP of the solvent with high solubility and low thermal decomposition are appropriate. The reaction temperature is usually from -50 °C to the boiling point of the solvent used, and the range of 〇~140 °C is preferred. The reaction time is usually 〇.1 ~ 1 0 0 hours.
反應完成後,在反應溶劑之餾除,具有磺酸基之情形 可以陽離子交換樹脂所致磺酸鹽之質子化,甲醇等之溶劑 所致萃取操作,再沈澱操作等,而可精製。 本發明之第3磺酸酯化合物係如下述式(7)或(8)所 示0 -25- 200800870 (23) [化 20]After completion of the reaction, the reaction solvent is distilled off, and when the sulfonic acid group is present, protonation of the sulfonate by the cation exchange resin, extraction by a solvent such as methanol, reprecipitation operation, etc., can be carried out. The third sulfonate compound of the present invention is represented by the following formula (7) or (8) 0 - 25 - 200800870 (23) [Chem. 20]
⑻ 式中W示取代或非取代之3價烴基,具有至少一個 與A”或S原子之鍵結,此鍵結以外之鍵結,亦即若爲具 有至少2個與高分子鏈形成爲相關之鍵結鍵則無特別限 定。 其具體例方面,可例舉至少1個氫,被A”或S原子 所取代之乙烯(-CH2CH2-),乙烯撐(-CH = CH-),乙炔((8) wherein W represents a substituted or unsubstituted trivalent hydrocarbon group having at least one bond to an A" or S atom, and a bond other than the bond, that is, if at least two are formed in association with the polymer chain The bonding bond is not particularly limited. Specific examples thereof include ethylene (-CH2CH2-), ethylene (-CH=CH-), and acetylene substituted with at least one hydrogen and substituted with A or S atoms.
-C = C - ) » 丙矯(-CH2CH2CH2-) ’ 異丙嫌(-CH2CH(CH3)·) ’ 乙烯乙烯(vinyl-ethylene)( -CH2CH(CH = CH2) ·),甲氧基 乙烯(_CH2CH(0CH3)-),乙氧基乙烯(-CH2CH(OCH2CH3)-),(甲基胺基)乙烯(-ch2ch(nhch3)-),(二甲基胺基)乙 烯(-CH2CH(N(CH3)2)-),丙烯酸甲基酯衍生物( -ch2ch(c(o)och3)-),甲基丙烯酸甲基酯衍生物( -CH2C(CH3)(C(O)0CH3)-),伸苯基(-C6H4-),聯伸苯基( -c6h4-c6h4-)等,各自之氫進而可被1價烴基取代。 較佳爲,可例舉下述式(9)或(10)所示之磺酸酯化合 物0 -26- 200800870 (24) [化 21]-C = C - ) » propyl (-CH2CH2CH2-) 'isopropyl isopropyl (-CH2CH(CH3)·) ' vinyl-ethylene (-CH2CH(CH = CH2) ·), methoxyethylene ( _CH2CH(0CH3)-), ethoxyethylene (-CH2CH(OCH2CH3)-), (methylamino)ethylene (-ch2ch(nhch3)-), (dimethylamino)ethylene (-CH2CH (N ( CH3) 2)-), a methyl acrylate derivative (-ch2ch(c(o)och3)-), a methyl methacrylate derivative (-CH2C(CH3)(C(O)0CH3)-), Phenyl (-C6H4-), a phenyl group (-c6h4-c6h4-), etc., each of which may be further substituted with a monovalent hydrocarbon group. Preferably, the sulfonate compound represented by the following formula (9) or (10) is exemplified by 0-26-200800870 (24) [Chem. 21]
上述式中,R5〜R7係各自獨立,示氫原子,非取代 或者取代之一價烴基,或鹵原子,與一價烴基之具體例方 面,可例舉與上述同樣之物。 A ”係2價烴基或單鍵,2價烴基之具體例方面,可例 舉在以上述A所示之一價烴基中,將與氫鍵結之一個鍵 結部分變換成鍵結鍵成爲2價者,尤其是,以取代或者非 取代之2價芳香環基或單鍵爲恰當。此外,單鍵之情形, W與S原子可爲直接鍵結。 s爲2〜100000,較佳爲20〜5000之整數。t爲1〜 100000,較佳爲20〜5000之整數,U爲1〜100000之整 數,較佳爲1〜5000之整數,且,t + u爲2〜1 〇〇〇〇〇,較 佳爲滿足2 0〜5 0 0 0。 就X,Y,Z則與上述式(1)所記載之內容同樣。 式(7)或式(8)所示之化合物之製造法方面,可例舉下 述之方法,然而並非限制於該等。 首先藉由與上述同樣之方法,自含有聚合性官能基 (W’)之磺酸化合物(17)來合成磺酸酯化合物(20)。進而供 -27- 200800870 (25) 予聚合反應,並衍生爲式(7)所示之化合物。此時,一部 份之磺酸酯成爲遊離之磺酸,而有成爲式(8)所示化合物 之情形。In the above formula, R5 to R7 each independently represent a hydrogen atom, an unsubstituted or substituted monovalent hydrocarbon group, or a halogen atom, and specific examples of the monovalent hydrocarbon group may be the same as those described above. In the specific example of the divalent hydrocarbon group or the single bond, the divalent hydrocarbon group, a bond group having a bond with hydrogen may be converted into a bond bond in the one-valent hydrocarbon group represented by the above A. The price is, in particular, a substituted or unsubstituted divalent aromatic ring group or a single bond. Further, in the case of a single bond, the W and S atoms may be directly bonded. The s is 2 to 100,000, preferably 20 An integer of ~5000. t is an integer from 1 to 100000, preferably from 20 to 5000, U is an integer from 1 to 100000, preferably an integer from 1 to 5000, and t + u is 2 to 1 〇〇〇〇 Preferably, it satisfies 20 to 500. X, Y, and Z are the same as those described in the above formula (1). The production method of the compound represented by the formula (7) or the formula (8) The following method can be exemplified, but it is not limited to the above. First, a sulfonate compound (20) is synthesized from a sulfonic acid compound (17) containing a polymerizable functional group (W') by the same method as above. Further, for -27-200800870 (25), a polymerization reaction is carried out, and a compound represented by the formula (7) is derived. At this time, a part of the sulfonic acid ester becomes a free sulfonic acid. It has become the formula (8) shown in the case of a compound.
上述式(1)〜(10)所示磺酸酯化合物,可藉由加熱處理 等而生成磺酸,及此磺酸化合物顯示電子接受性,故作爲 酸發生劑或電子接受性物質先質可恰當使用。 磺酸酯化合物相對於含低極性溶劑之廣範圍之溶劑顯 示高溶解性,故使用各式各樣的溶劑來調製溶液物性爲可 行,塗佈特性爲高。因此以磺酸酯之狀態塗佈,在塗膜乾 燥時或燒成時以使磺酸發生爲佳。 自磺酸酯使磺酸發生之溫度在室溫爲穩定,且,燒成 -28- 200800870 (26) 溫度以下爲佳,故以4 0〜3 0 0 °C爲佳。進而在考慮到清漆 內之高穩定性與燒成時脫離之容易性,則以80〜23 〇°C爲 佳,1 2 0〜1 8 0 °C更佳。 上述式(1)〜(10)所示之磺酸酯化合物其本身可作爲電 子接受性物質使用。尤其是在式(3 ),(4)之化合物中,m爲 1以上之情形,有磺酸基存在,其本身顯示強電子接受 性,故作爲電子接受性物質可恰當使用。 φ 上述式(4)及(7)〜(10)所示之磺酸酯化合物,可作爲 高分子量物質使用。分子量並無特別限定,可一面維持高 溶解性一面使分子量增大時,因可期待膜內移動性之抑 * 制,成膜時塗膜之穩定化,故以高分子量爲所期望,而在 分子量過大時會有溶解性之降低或凝集產生之情形。具體 範圍方面以數平均分子量爲 5 00 0〜100000爲佳,以 20000〜50000進而爲佳。 上述式(1)〜(10)所示之磺酸酯化合物,與爲電荷輸送 ^ Φ 機構本體之電荷輸送性物質一起溶解或分散於溶劑下,可 成爲電荷輸送性清漆。在此,電荷感受性物質係用於提高 電荷輸送能及成膜均一性所使用之物,其與電荷感受性摻 雜劑物質同義。 此外,電荷輸送性係與導電性同義,本發明中則與電 洞輸送性同義。電荷輸送性清漆,其物之本身可爲有電荷 輸送性,亦可爲在清漆所得固體膜具有電荷輸送性。 電荷輸送性物質若爲以溶劑可溶解或均一地分散之電 荷輸送性低寡聚物或聚合物則並無特別限定,可爲具有一 -29- 200800870 (27) 種連續之共軛單位的低寡聚物,具有相異的連續之共軛單 位之組合的低寡聚物爲所望。 在此,共軛單位若爲可輸送電荷之原子,芳香環,共 軛基則並無特別限定,較佳爲取代或者非取代之2〜4價 苯胺基,噻吩基,呋喃基,吡咯基,伸乙炔基,乙烯撐 基,伸苯基,萘基,噁二唑基,喹啉基,sil〇le基,矽原 子’吡啶基,伸苯基乙烯撐基,蕗基,咔唑基,三芳基胺 基’金屬-或者無金屬-酞菁基,及金屬-或者無金屬-卟啉 基等。 取代基之具體例方面,係各自獨立之氫,羥基,鹵 基,胺基,矽烷醇基,硫代(thiol)基,羧基,磺酸基,磷 酸基,磷酸酯基,酯基,硫代酯基,醯胺基,硝基,一價 烴基’有機氧基,有機胺基,有機單矽烷基,有機硫基, 醯基’礪基等,該等之官能基進而可被任一官能基所取 代。The sulfonate compound represented by the above formulas (1) to (10) can be formed into a sulfonic acid by heat treatment or the like, and the sulfonic acid compound exhibits electron acceptability, so that it can be used as an acid generator or an electron accepting substance. Use it properly. Since the sulfonate compound exhibits high solubility with respect to a wide range of solvents containing a low polar solvent, it is possible to prepare a solution property using a wide variety of solvents, and the coating property is high. Therefore, it is preferably applied in the form of a sulfonate to cause sulfonic acid to occur when the coating film is dried or when it is fired. The temperature at which the sulfonic acid is generated from the sulfonic acid ester is stable at room temperature, and the firing temperature is preferably -28-200800870 (26) or less, so that it is preferably 40 to 300 ° C. Further, in consideration of the high stability in the varnish and the ease of detachment during firing, it is preferably 80 to 23 〇 ° C, more preferably 1 2 0 to 1 80 ° C. The sulfonate compounds represented by the above formulas (1) to (10) can be used as an electron accepting substance by themselves. In particular, in the compounds of the formulae (3) and (4), when m is 1 or more, since a sulfonic acid group exists and it exhibits strong electron acceptability, it can be suitably used as an electron accepting substance. φ The sulfonate compound represented by the above formulas (4) and (7) to (10) can be used as a high molecular weight substance. The molecular weight is not particularly limited, and when the molecular weight is increased while maintaining high solubility, the film can be expected to be stabilized during film formation, so that high molecular weight is desired. When the molecular weight is too large, there is a case where the solubility is lowered or agglutination occurs. The specific range is preferably a number average molecular weight of from 50,000 to 100,000, more preferably from 20,000 to 50,000. The sulfonate compound represented by the above formulas (1) to (10) can be dissolved or dispersed in a solvent together with a charge transporting substance which is a charge transporting mechanism, and can be a charge transporting varnish. Here, the charge-sensitive substance is used for improving the charge transporting ability and film formation uniformity, and is synonymous with the charge-sensitive dopant substance. Further, the charge transporting property is synonymous with conductivity, and in the present invention, it is synonymous with hole transportability. The charge transporting varnish may have a charge transporting property itself or a charge transporting property of the solid film obtained from the varnish. The charge transporting substance is not particularly limited as long as it is a solvent-transmissive low-oligomer or a polymer which is soluble or uniformly dispersed in a solvent, and may have a low conjugate unit of from -29 to 200800870 (27). Oligomers, low oligomers having a combination of distinct continuous conjugate units are desirable. Here, the conjugate unit is an atom capable of transporting a charge, and the aromatic ring or the conjugated group is not particularly limited, and is preferably a substituted or unsubstituted 2 to 4 valent anilino group, a thienyl group, a furyl group, a pyrrolyl group, Ethylene group, vinylene group, phenylene, naphthyl group, oxadiazolyl, quinolyl group, sil〇le group, fluorene atom 'pyridyl group, phenylvinylene group, fluorenyl group, carbazolyl group, triaryl Amino-based metal- or metal-free phthalocyanine groups, and metal- or metal-free porphyrin groups. Specific examples of the substituent are independently hydrogen, hydroxy, halo, amine, stanol, thiol, carboxyl, sulfonate, phosphate, phosphate, ester, thio Ester group, decylamino group, nitro group, monovalent hydrocarbon group 'organooxy group, organic amine group, organic monodecyl group, organic thio group, fluorenyl' fluorenyl group, etc., and these functional groups can be further substituted by any functional group Replaced.
上述一價烴基,有機氧基,有機胺基,有機單矽烷 基’有機硫基,及醯基等中碳數並無特別限定,一般爲碳 數1〜20,較佳爲1〜8。 此外’一價烴基,有機氧基,有機胺基,有機單矽烷 基,有機硫基,醯基之具體例係如上述。 恰當的取代基方面,可例舉氟,磺酸基,取代或者非 取代之有機氧基,烷基,有機單矽烷基。此外,共軛單位 爲連結而形成之共軛鏈,可含有環狀部分。 電荷輸送性物質之數平均分子量在考慮到提高溶解性 -30- 200800870 (28) 時’以5 0 0 0以下爲所望’爲顯現低揮發性及電荷輸送性 則分子量200以上爲所望。相對於至少一種之溶劑以顯示 高溶解性之物質爲佳’相對於至少一種之溶劑若爲顯示高 溶解性之物質,則可爲數平均分子量5000〜500000。 電荷輸送物質方面,尤以日本特開2002-151272號公 報記載之低苯胺衍生物可恰當使用。亦即,以式(2 1 )所示 之低苯胺衍生物爲恰當。此外,以下之一價烴基,有機氧 基及醯基方面,可例舉與先前所述之基同樣之物。 [化 23] (21) r 1 r 〒91 R8—D1-NH——D2-pll—R11 sf (式中,R8示氫原子,一價烴基,或有機氧基,R9及 R11示各自獨立之氫原子或一價烴基,D1及D2示各自獨 立之下述式(22)或(23) [化 24]The number of carbon atoms in the above-mentioned monovalent hydrocarbon group, organooxy group, organic amine group, organic monodecyl group 'organothio group, and mercapto group is not particularly limited, and is usually from 1 to 20 carbon atoms, preferably from 1 to 8 carbon atoms. Further, specific examples of the 'monovalent hydrocarbon group, the organic oxy group, the organic amine group, the organic monodecyl group, the organic thio group and the fluorenyl group are as described above. As the appropriate substituent, a fluorine, a sulfonic acid group, a substituted or unsubstituted organic oxy group, an alkyl group or an organic monodecyl group can be exemplified. Further, the conjugated unit is a conjugated chain formed by joining, and may contain a cyclic moiety. The number average molecular weight of the charge transporting substance is expected to increase the solubility -30-200800870 (28), which is expected to be less than 5,000, and exhibits low volatility and charge transportability. It is preferable that the solvent exhibiting high solubility with respect to at least one kind of solvent is a number average molecular weight of 5,000 to 500,000 if it is a substance exhibiting high solubility with respect to at least one kind of solvent. In the case of the charge transporting material, the low aniline derivative described in JP-A-2002-151272 can be suitably used. That is, the low aniline derivative represented by the formula (2 1 ) is suitable. Further, the following one-valent hydrocarbon group, organic oxygen group and mercapto group may be the same as those previously described. (21) r 1 r 〒91 R8—D1-NH—D2-pll—R11 sf (wherein R 8 represents a hydrogen atom, a monovalent hydrocarbon group, or an organooxy group, and R 9 and R 11 are each independently represented. a hydrogen atom or a monovalent hydrocarbon group, and D1 and D2 each independently represent the following formula (22) or (23) [Chem. 24]
所示之2價基,R11〜R18示各自獨立之氫,羥基,一 價烴基,有機氧基,醯基,或磺酸基’ s’及係各自獨立 爲1以上之整數,可滿足s’ + t’€20)。 -31 - 200800870 (29) 進而,使分子內ττ共軛系可盡量擴張者,因可提高所 得電荷輸送性薄膜之電荷輸送性,特別是,以使用式(24) 所示之低苯胺衍生物,或爲其氧化物之苯醌二亞胺衍生物 爲佳。此外’在式(24)之2個苯環中,賦予同一符號之取 代基,同時可爲相同,或相異。The divalent group shown, R11 to R18 each independently represent a hydrogen, a hydroxyl group, a monovalent hydrocarbon group, an organooxy group, a decyl group, or a sulfonic acid group 's' and each independently an integer of 1 or more, which satisfies s' + t'€20). -31 - 200800870 (29) Further, the intramolecular ττ conjugate system can be expanded as much as possible, because the charge transportability of the obtained charge transporting film can be improved, and in particular, the low aniline derivative represented by the formula (24) can be used. Or a benzoquinone diimine derivative of its oxide is preferred. Further, in the two benzene rings of the formula (24), the substituents of the same symbols are given, and they may be the same or different.
[化 25][Chem. 25]
(式中,R8〜R14,s’及r與上述同義)。 在式(21)及(24)中,s’ + t’就可發揮良好電荷輸送性之 點,以4以上爲佳,由可確保對溶劑之溶解性之點,以 16以下爲佳。 進而’ R8在爲氫原子,且,R1G爲苯基之情形,亦 即,式(24)之低苯胺衍生物之兩末端則以苯基封端爲佳。 該等之電荷輸送物質可僅使用1種,亦可組合2種以 上之物質來使用。 上述式(21)所示之化合物之具體例方面,可例舉苯基 四苯胺,苯基五苯胺,四苯胺(苯胺四聚物),八苯胺(苯 胺8聚物)等之有機溶劑的可溶低苯胺衍生物。 進而,其他電荷輸送性物質之合成法方面,並無特別 限定,可例舉例如文獻,曰本化學界會報(Bulletin Of(wherein R8 to R14, s' and r are synonymous with the above). In the formulas (21) and (24), s' + t' can exhibit good charge transportability, preferably 4 or more, and preferably 16 or less from the viewpoint of ensuring solubility in a solvent. Further, when R8 is a hydrogen atom and R1G is a phenyl group, that is, both ends of the low aniline derivative of the formula (24) are preferably blocked with a phenyl group. These charge transporting materials may be used alone or in combination of two or more. Specific examples of the compound represented by the above formula (21) include an organic solvent such as phenyltetraphenylamine, phenylpentaniline, tetraphenylamine (aniline tetramer), and octaphenylamine (aniline 8 polymer). Soluble low aniline derivatives. Further, the synthesis method of the other charge transporting substance is not particularly limited, and examples thereof include the literature, and the 化学本化学界会报 (Bulletin Of
Chemical Society of Japan),1 994 年,第 67 卷,P.1 749- -32- 200800870 (30) 1 7 5 2,合成金屬(S y n t h e t i c M e t a 1 s ),美國,1 9 9 7 年,第 84卷,ρ· 11 9-1 20所記載之低苯胺合成法,或例如文獻, 雜環化物(Heterocycles),1 987 年,第 26 卷,ρ·93 9-942,雜環化物(Heterocycles),1987 年,第 26 卷, ρ· 1 793 - 1 796所記載之低噻吩合成法等。 本發明之電荷輸送性清漆中,爲使電荷輸送性物質及 電荷感受性物質可良好地溶解的高溶解性溶劑,相對於使 φ 用於清漆之溶劑全體可以5〜1 0 0重量%之比率使用。在 此情形,藉由高溶解性溶劑,清漆可完全溶解,而以成爲 均一地分散之狀態爲佳。 * 高溶解性溶劑方面,並無特別限定,可例舉例如水, 甲醇,N,N —二甲基甲醯胺,N,N-二甲基乙醯胺,N-甲基 吡咯啶酮,N,Nf-二甲基咪唑烷酮(imidazolidinone ),二 甲基亞楓,氯仿,甲苯,甲醇等。 又,本發明之電荷輸送性清漆具有於20 °C,10〜 .φ 2〇〇mPa · s之黏度,在常壓至少含有一種沸點5 0〜3 0(TC 之高黏度有機溶劑爲所望。 進而,電荷輸送性清漆,以含有於 20°C,50〜 15 0mPa · s之黏度,常壓下,沸點150〜25 0 °C之有機溶劑 爲恰當。 ^ 高黏度有機溶劑方面,並無特別限定,可例舉例如環 己醇,乙二醇,乙二醇二環氧丙基醚,1,3-辛二醇,二乙 二醇,二丙二醇,三乙二醇,三丙二醇,1,3-丁烷二醇, 1,4-丁烷二醇,丙二醇,己二醇等。 -33- 200800870 (31) 本發明之清漆所使用之相對於溶劑全體之高黏度有機 溶劑之添加比率,以在固體不析出之範圍內爲佳,在固體 不析出之範圍中,添加比率可爲5〜8 0質量%。 此外,在目的係對於基板濕潤性之提高,溶劑表面張 力之調整,極性之調整,沸點之調整等,在燒成時可賦予 膜平坦性之其他溶劑,相對於使用於該清漆之溶劑全體爲 1〜90質量%,較佳爲以1〜50質量%之比率混合。 φ 此種溶劑方面,並無特別限定,可例舉例如丁基溶纖 劑,二乙二醇二乙基醚,二丙二醇單甲基醚,乙基卡必 醇,二丙酮醇,r-丁內酯,乳酸乙酯等。 ' 藉由將以上說明之電荷輸送性清漆塗佈於基材上,使 溶劑蒸發,而可在基材上形成電荷輸送性塗膜。 清漆之塗佈方法方面,並無特別限定,可例舉浸漬 法,旋轉塗佈法,噴灑法,噴墨法,轉印印刷法,輥塗佈 法,毛刷塗佈等,任一種方法均可爲均一的成膜。 .φ 溶劑之蒸發法並無特別限定,在使用熱板或烤爐,於 適切的氛圍下,亦即,在大氣,氮等惰性氣體,真空中等 進行蒸發,可獲得具有均一成膜面之膜。 燒成溫度,若爲可蒸發溶劑者並無特別限定,以40 〜2 5 0 °C爲佳。而爲顯現更高的均一成膜性,又在基材上 爲進行反應,則可增添2階段以上之溫度變化。 藉由塗佈及蒸發操作所得電荷輸送性薄膜之膜厚,並 無特別限定,在有機EL元件內作爲電荷注入層使用之情 形,以5〜20 0nm爲所望。在使膜厚改變之方法方面,則 -34- 200800870 (32) 有清漆中固形成分濃度之變化或塗佈時基板上溶液量變化 等之方法。 在使用本發明之電荷輸送性清漆之OLED元件之製作 方法,使用材料方面,可例舉以下方法及材料,但並非限 定於該等。 使用之電極基板,可進行洗劑,醇,純水等所致液體 洗淨予以預先作淨化,在陽極基板,在使用跟前以進行臭 φ 氧處理,氧-電漿處理等之表面處理爲佳。但是陽極材料 ^ 在以有機物爲主成分之情形,不進行表面處理亦可。 將電洞輸送性清漆用於OLED元件之情形,例如,可 採用以下之方法。 亦即,相對於陽極基板係使用該電洞輸送性清漆藉由 上述膜製作方法,在電極上製作電洞輸送性薄膜。使其導 入真空蒸鍍裝置內,將電洞輸送層,發光層,電子輸送 層,電子注入層,陰極金屬依順序蒸鍍成爲OLED元件。 ^ # 此時,爲控制發光區域則可在任意層間設置載體阻塞 ^ (carrier block)層。 陽極材料方面,可例舉銦錫氧化物(ITO),銦鋅氧化 物(IZO)所代表之透明電極,以可進行平坦化處理爲佳。 可使用具有高電荷輸送性之聚噻吩衍生物,或聚苯胺類。 在形成電洞輸送層之材料方面,可例舉(三苯基胺)二 聚物衍生物(TPD),(α-萘基二苯基胺)二聚物(a-NPD), [(三苯基胺)二聚物]螺旋二聚物(Spiro-TAD)等之三芳基胺 類:,4,4’54”-三個[3-甲基苯基(苯基)胺基]三苯基胺(m- -35 - 200800870 (33) MTDATA),4,4’,4”-三個Π-萘基(苯基)胺基]三苯基胺(1-TNATA)等之星爆型胺類:,5,5”-雙-{4-[雙(4-甲基苯基)胺 基)苯基]-2 5 2’:5、2”三噻吩(16以11丨〇?1^1^)(6厘人-3丁)等之 低噻吩類。 在形成發光層之材料方面,可例舉三(8-喹啉酚根)鋁 (III)(Alq3),雙(8-喹啉酚根)鋅(II)(Znq2),雙(2-甲基-8-喹 啉酚根)(對苯基苯酚鹽)鋁(III)(BAlq),4,4’-雙(2,2-二苯基 乙烯)聯苯基(DPVBi)等。此外,可藉由電子輸送材料或電 洞輸送材料,與發光性摻雜劑之共蒸鍍而形成發光層。 電子輸送材料方面,可例舉 Alq3,BAlq,DPVBi, (2-(4-聯苯基)-5-(4-三級丁基苯基)-1,3,4-噁二唑)(PBD), 三嗤衍生物(TAZ),bathocuproin(BCP),silole 衍生物等。 發光性摻雜劑方面,可例.舉喹吖酮 (quinacridone),四审,香豆素 540,4-(二氰亞甲基)-2-甲基- 6-(對二甲基胺基苯乙烯基)-4H-哌喃(DCM),三(2-苯基吡啶)銥(in)(lr(PPy)3),(1,10-菲繞啉)·三(4,4,4-三 氟-1-(2-噻吩基)-丁院-1,3-二醇根合基)銪 (III)(Eu(TTA)3phen)等。 在形成載體阻塞層之材料方面,可例舉PBD,TAZ, 及 BCP ° 電子注入層方面,可例舉氧化鋰(Li20),氧化鎂 (Mg02),氧化鋁(A12 03 ),氟化鋰(LiF),氟化鎂(MgF2), 氟化緦(SrF〇,Liq,乙醯基乙醯基丙酮合基鋰錯合物 (L i ( a c a c )),乙酸鋰,苯甲酸鋰等。 -36- 200800870 (34) 陰極材料方面,可例舉鋁,鎂-銀合金,鋁-鋰合金, 鋰,鈉,鉀,鉋等。 在將本發明之電荷輸送性清漆使用於OLED元件之情 形,可採用例如以下之方法。 在陰極基板上使用該電子輸送性清漆來製作電子輸送 性薄膜.,使其導入真空蒸鍍裝置內,使用與上述同樣之材 料形成電子輸送層,發光層,電洞輸送層,電洞注入層 φ 後,將陽極材料以灑鍍等方法予以成膜成爲OLED元件。 在使用到本發明之電荷輸送性清漆之PLED元件之製 作方法,可例舉例如以下之方法,然而並非限制於該等。 ‘ 上述OLED元件製作中,替代以電洞輸送層,發光 層,電子輸送層,電子注入層之真空蒸鍍操作之進行,而 藉由發光性電荷輸送性高分子層之形成,可製作含有以本 發明之電荷輸送性清漆所形成之電荷輸送性薄膜的PLED 元件。 .φ 具體言之,相對於陽極基板使該電洞輸送性清漆以上 述方法塗佈在電極上製作電洞輸送性薄膜,在其上部形成 發光性電荷輸送性高分子層,進而,使陰極電極蒸鍍而成 爲PLED元件。 或,相對於陰極基板使用該電子輸送性清漆,以上述 方法在電極上製作電子輸送性薄膜,在其上部形成發光性 電荷輸送性高分子層,進而使陽極電極以濺鍍,蒸鍍,旋 轉塗佈等製作成爲PLED元件。 陰極及陽極材料方面,可使用與上述OLED元件所例 -37- 200800870 (35) 示之物爲同樣之物質,進行同樣之洗淨處理,表面處理。 在發光性電荷輸送性高分子層之形成法方面,可例舉 相對於發光性電荷輸送性高分子材料,或對此添加發光性 摻雜劑之材料,添加溶劑,進行溶解或均一地分散,在塗 佈於形成有電洞輸送性薄膜之電極基板後,藉由溶劑之蒸 發而成膜之方法。 在發光性電荷輸送性高分子材料方面,可例舉聚(9,9_ φ 二烷基莽)(PDAF)等之聚莽衍生物,聚(2-甲氧基-5-(2’-乙 • 基己氧基(hex〇xy))-i,4·伸苯基乙烯撐)(meh-ppv)等之聚 伸苯基乙烯撐衍生物,聚(3 -烷基噻吩)(PAT)等之聚噻吩 衍生物,聚乙烯咔唑(PVCz)等。 溶劑方面,可例舉甲苯,二甲苯,氯仿等,在可溶解 或均一分散法方面,可例舉以攪拌,加熱攪拌,超音波分 散等方法進行溶解或均一地分散之方法。 塗佈方法方面,並無特別限定,可例舉浸漬法,旋轉 ^ φ 塗佈法,轉印印刷法,輥塗佈法,毛刷塗佈等。塗佈,在 氮,氬等之惰性氣體下進行爲所望。 溶劑之蒸發法方面可例舉在惰性氣體下或真空中,以 烤爐或熱板加熱之方法。 【實施方式】 實施例 以下,試例舉合成例,實施例及比較例,更具體說明 本發明,但是本發明並非限定於下述之實施例。 -38- (36) (36)200800870 [合成例1] 依照下述反應式,來合成萘二磺酸化合物低寡聚物 2(以下,簡稱NSO-2)。 [化 26]Chemical Society of Japan), 1985, Vol. 67, P.1 749--32-200800870 (30) 1 7 5 2, Synthetic Metal (etaphic eta 1 s), United States, 1979, Volume 84, Low Aniline Synthesis as described in ρ·11 9-1 20, or, for example, the literature, Heterocycles, 1987, Vol. 26, ρ·93 9-942, Heterocycles ), 1987, Vol. 26, Low Thiophene Synthesis Method as described in ρ·1 793 - 1 796. In the charge transporting varnish of the present invention, the highly soluble solvent which can dissolve the charge transporting substance and the charge sensitive substance can be used in a ratio of 5 to 100% by weight based on the total amount of the solvent used for the varnish. . In this case, the varnish can be completely dissolved by the highly soluble solvent, and it is preferably in a state of being uniformly dispersed. * The highly soluble solvent is not particularly limited, and examples thereof include water, methanol, N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, and N. , Nf-dimethylimidazolidinone (imidazolidinone), dimethyl sulfoxide, chloroform, toluene, methanol, and the like. Further, the charge transporting varnish of the present invention has a viscosity at 20 ° C, 10 to .φ 2 〇〇 mPa · s, and at least one boiling point of 50 to 30 at normal pressure (TC is a high viscosity organic solvent. Further, the charge transporting varnish is preferably an organic solvent having a viscosity of 50 to 150 mPa·s at 20 ° C and a boiling point of 150 to 250 ° C under normal pressure. ^ High viscosity organic solvent is not particularly The definition is, for example, cyclohexanol, ethylene glycol, ethylene glycol diepoxypropyl ether, 1,3-octanediol, diethylene glycol, dipropylene glycol, triethylene glycol, tripropylene glycol, 1, 3-butanediol, 1,4-butanediol, propylene glycol, hexanediol, etc. -33- 200800870 (31) The ratio of addition of the high viscosity organic solvent used in the varnish of the present invention to the entire solvent, In the range where the solid does not precipitate, the addition ratio may be 5 to 80% by mass in the range where the solid does not precipitate. Further, in order to improve the wettability of the substrate, the adjustment of the surface tension of the solvent, the polarity Adjustment, adjustment of boiling point, etc., other solvents that can impart flatness to the film during firing, phase The solvent to be used in the varnish is preferably 1 to 90% by mass, preferably 1 to 50% by mass. φ The solvent is not particularly limited, and examples thereof include butyl cellosolve and diethyl phthalate. Alcohol diethyl ether, dipropylene glycol monomethyl ether, ethyl carbitol, diacetone alcohol, r-butyrolactone, ethyl lactate, etc. ' by applying the above-described charge transporting varnish to a substrate The solvent is evaporated to form a charge transporting coating film on the substrate. The coating method of the varnish is not particularly limited, and examples thereof include a dipping method, a spin coating method, a spray method, and an ink jet method. Printing method, roll coating method, brush coating, etc., all of which can be uniform film formation. The evaporation method of φ solvent is not particularly limited, and a hot plate or an oven is used in an appropriate atmosphere. That is, an inert gas such as the atmosphere or nitrogen may be evaporated in a vacuum to obtain a film having a uniform film-forming surface. The firing temperature is not particularly limited as long as it is an evaporable solvent, and is 40 to 250 ° C. It is better to show higher uniform film formation and on the substrate. In order to carry out the reaction, the temperature change of the charge transporting film obtained by the coating and the evaporation operation is not particularly limited, and it is used as a charge injection layer in the organic EL device. ~20 0 nm is expected. In the method of changing the film thickness, the method of -34-200800870 (32) has a change in the solid content concentration in the varnish or a change in the amount of the solution on the substrate during coating. The method for producing the OLED element of the transport varnish may be exemplified by the following methods and materials, but the method is not limited thereto. The electrode substrate used can be washed with a lotion, alcohol, pure water or the like. It is preferable to perform surface treatment in advance on the anode substrate for the treatment of odor φ oxygen, oxygen-plasma treatment, etc. before use. However, in the case where the organic material is mainly composed of the anode material, the surface treatment may not be performed. In the case where a hole transport varnish is used for the OLED element, for example, the following method can be employed. In other words, the hole transporting varnish is used for the anode substrate to form a hole transporting film on the electrode by the film forming method. This is introduced into a vacuum evaporation apparatus, and a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode metal are sequentially vapor-deposited to form an OLED element. ^ # At this time, the carrier block layer can be set between any layers to control the light-emitting area. The anode material may, for example, be a transparent electrode represented by indium tin oxide (ITO) or indium zinc oxide (IZO), and is preferably planarized. Polythiophene derivatives having high charge transportability, or polyanilines can be used. The material for forming the hole transport layer may, for example, be a (triphenylamine) dimer derivative (TPD) or an (α-naphthyldiphenylamine) dimer (a-NPD), [(3) Phenylamine) Dimer] Spiral Dimer (Spiro-TAD) and other triarylamines: 4,4'54"-three [3-methylphenyl(phenyl)amino]triphenyl Amine (m- -35 - 200800870 (33) MTDATA), 4,4',4"-tris-naphthyl (phenyl)amino]triphenylamine (1-TNATA) Amines: 5,5"-bis-{4-[bis(4-methylphenyl)amino)phenyl]-2 5 2':5,2"trithiophene (16 to 11 丨〇?1 ^1^) (6 PCT - 3 butyl) and other low thiophenes. In terms of the material for forming the light-emitting layer, tris(8-quinolinol) aluminum (III) (Alq3), bis(8-quinolinol) zinc (II) (Znq2), bis (2-A) Alkyl-8-quinolinol) (p-phenylphenolate) aluminum (III) (BAlq), 4,4'-bis(2,2-diphenylethylene)biphenyl (DPVBi) or the like. Further, a light-emitting layer can be formed by co-evaporation with an illuminating dopant by an electron transporting material or a hole transporting material. As the electron transporting material, Alq3, BAlq, DPVBi, (2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole) (PBD) can be exemplified. ), triterpenoid derivatives (TAZ), bathocuproin (BCP), silole derivatives, and the like. As the luminescent dopant, quinacridone, quaternary, coumarin 540, 4-(dicyanomethylene)-2-methyl-6-(p-dimethylamino) can be mentioned. Styryl)-4H-pyran (DCM), tris(2-phenylpyridine)indole (in) (lr(PPy)3), (1,10-phenanthroline)·three (4,4,4 -Trifluoro-1-(2-thienyl)-butylene-1,3-diolate) ruthenium (III) (Eu(TTA)3phen) and the like. The material for forming the carrier blocking layer may, for example, be PBD, TAZ, and BCP ° electron injecting layer, and may be exemplified by lithium oxide (Li20), magnesium oxide (Mg02), aluminum oxide (A12 03 ), and lithium fluoride ( LiF), magnesium fluoride (MgF2), strontium fluoride (SrF〇, Liq, ethionyl acetonyl acetonide lithium complex (L i (acac)), lithium acetate, lithium benzoate, etc. -36 - 200800870 (34) The cathode material may, for example, be aluminum, magnesium-silver alloy, aluminum-lithium alloy, lithium, sodium, potassium, planer, etc. In the case where the charge transporting varnish of the present invention is used for an OLED element, For example, the electron transporting film is formed on the cathode substrate by using the electron transporting varnish, and introduced into a vacuum vapor deposition apparatus, and an electron transporting layer, a light emitting layer, and a hole transporting are formed using the same material as described above. After the hole is injected into the layer φ, the anode material is formed into a OLED element by sputtering or the like. The method for producing the PLED element using the charge transporting varnish of the present invention may, for example, be the following method. Not limited to this. 'The above OL In the fabrication of the ED device, instead of the vacuum evaporation operation of the hole transport layer, the light-emitting layer, the electron transport layer, and the electron injection layer, the formation of the luminescent charge-transporting polymer layer can be made to contain the present invention. The PLED element of the charge transporting film formed by the charge transporting varnish. φ Specifically, the hole transporting varnish is applied to the electrode by the above method to form a hole transporting film with respect to the anode substrate, and An illuminating charge transporting polymer layer is formed on the upper portion, and the cathode electrode is vapor-deposited to form a PLED element. Alternatively, the electron transporting varnish is used for the cathode substrate, and an electron transporting film is formed on the electrode by the above method. An illuminating charge transporting polymer layer is formed on the upper portion, and the anode electrode is formed into a PLED element by sputtering, vapor deposition, spin coating, etc. For the cathode and anode materials, the OLED element can be used as an example -37-200800870 ( 35) The substance shown is the same substance, and the same washing treatment and surface treatment are carried out. Formation of the luminescent charge transporting polymer layer In addition, a solvent may be added to the luminescent charge transporting polymer material or a material to which the luminescent dopant is added, and a solvent may be added thereto to be dissolved or uniformly dispersed, and applied to the hole transporting film formed thereon. A method of forming a film by evaporation of a solvent after the electrode substrate. The luminescent charge transporting polymer material may, for example, be a polyfluorene derivative such as poly(9,9- φ dialkyl fluorene) (PDAF). Poly(phenylene vinylene) supported by poly(2-methoxy-5-(2'-ethylhexyloxy)-i,4·phenylene vinylene) (meh-ppv) A derivative, a polythiophene derivative such as poly(3-alkylthiophene) (PAT), polyvinyl carbazole (PVCz) or the like. The solvent may, for example, be toluene, xylene or chloroform. In the case of the dissolvable or uniform dispersion method, a method of dissolving or uniformly dispersing by stirring, heating and stirring, ultrasonic dispersion or the like may be mentioned. The coating method is not particularly limited, and examples thereof include a dipping method, a rotary φ coating method, a transfer printing method, a roll coating method, and a brush coating. Coating is carried out under an inert gas such as nitrogen or argon. The evaporation method of the solvent can be exemplified by heating in an oven or a hot plate under an inert gas or in a vacuum. [Embodiment] Hereinafter, the present invention will be more specifically described by way of Synthesis Examples, Examples and Comparative Examples, but the present invention is not limited to the following examples. -38- (36) (36) 200800870 [Synthesis Example 1] Naphthalene disulfonic acid compound oligomer 2 (hereinafter, abbreviated as NSO-2) was synthesized according to the following reaction formula. [Chem. 26]
將經良好乾燥之1-萘酚-3,6-二磺酸鈉(東京化成工業 公司製)934mg,於氮氛圍下,依順序添加全氟聯苯基 450mg,60%氫化鈉166mg,及無水Ν,Ν·二甲基咪唑烷酮 ( imidazolidinone) 50ml,使反應系以氮取代後,在80°C 經43小時攪拌。 在放冷至室溫後,添加水使反應停止,於減壓下濃縮 乾涸。添加甲醇5ml於殘渣,所得之懸濁液一邊攪拌一邊 添加於二乙基醚1 00ml。在室溫經1小時攪拌後,濾取析 出之固體,對濾物添加甲醇25ml以超音波懸濁。將不溶 固體以過濾除去,將濾液在減壓下濃縮並乾涸。添加甲 醇-水(1 : 2 ) 1 2 m 1於殘渣並溶解之,添加陽離子交換樹脂 DOWEX 6 5 0C(H型)約2ml,在攪拌10分鐘後進行過濾, 使濾液以用到陽離子交換樹脂 DOWEX 650C(H型約 -39- 200800870 (37) 40ml,餾出溶劑:甲醇·水(1:2))之柱色譜法進行精製。 使pH 1以下之劃分在減壓下濃縮乾涸,以異丙醇經 一次共沸後,在殘渣添加異丙醇2ml,將所得之溶液在二 乙基醚50ml中一邊攪拌一邊添加。在室溫經1小時攪拌 後,將上澄液除去,使殘渣在減壓下乾涸,獲得984mg 之黃色粉末(收率81%)。 將此黃色粉末以MALDI-TOF-MS分析之結果,可檢 • .測出被認爲來自NSO-2之主峰値(main peak)。 MS(MALDI-TOF-MS-) : m/z 901(M-H)' [實施例1] [化 27]934 mg of 1-naphthol-3,6-disulfonate (manufactured by Tokyo Chemical Industry Co., Ltd.) which was well-dried, and a perfluorobiphenyl 450 mg, 60% sodium hydride 166 mg, and anhydrous in a nitrogen atmosphere. 50 ml of hydrazine, imidazolidinone, and the reaction was replaced with nitrogen, and then stirred at 80 ° C for 43 hours. After allowing to cool to room temperature, water was added to stop the reaction, and the dried mash was concentrated under reduced pressure. 5 ml of methanol was added to the residue, and the resulting suspension was added to 100 ml of diethyl ether while stirring. After stirring at room temperature for 1 hour, the precipitated solid was collected by filtration, and 25 ml of methanol was added to the filtrate to supersonic suspension. The insoluble solid was removed by filtration, and the filtrate was concentrated under reduced pressure and dried. Add methanol-water (1:2) 1 2 m 1 to the residue and dissolve it, add about 2 ml of cation exchange resin DOWEX 6 5 0C (H type), filter after stirring for 10 minutes, and use the cation exchange resin for the filtrate. The DOWEX 650C (H-type about -39-200800870 (37) 40 ml, distillate solvent: methanol·water (1:2)) was purified by column chromatography. The mixture was concentrated to dryness under reduced pressure at a pH of 1 or less. After azeotropy with isopropyl alcohol, 2 ml of isopropyl alcohol was added to the residue, and the obtained solution was added while stirring in 50 ml of diethyl ether. After stirring at room temperature for 1 hour, the supernatant liquid was removed, and the residue was dried under reduced pressure to give 984 mg (yield: 81%). The yellow powder was analyzed by MALDI-TOF-MS to detect the main peak which was considered to be derived from NSO-2. MS (MALDI-TOF-MS-): m/z 901 (M-H)' [Example 1] [Chem. 27]
众。 〇2 〇2 0Public. 〇2 〇2 0
I 在1,3-苯二磺醯二氯(Aldrich公司製)998mg,於氮氛 圍下,添加脫水四氫呋喃(以下,稱爲THF)20mL使其溶 解。在此溶液中,於冰浴下依順序添加脫水丙二醇單甲基 醚(以下,稱爲PGME)0.85mL,60%氫化鈉3 25mg,照樣 經1 5分鐘攪拌。 升溫至室溫進行40分鐘攪拌,進而添加6〇%氫化鈉 5 2 6mg,在室溫經3G分鐘攪拌。使反應混合物以氟鎂石 過濾’以二氯乙烷’ PGME依順序洗淨,在加在一起之濾 液添加CG-50(Aldrich製)及水成爲pH7,再度進行氟鎂石 •40- (38) 200800870 過濾。 將濾液濃縮後添加二氯乙烷,進行二氧化矽凝膠過濾 (二氧化矽凝膠18g),進行二氯乙烷洗淨後,將加在一起 之濾液予以濃縮乾涸,使殘渣以己烷經3次洗淨後,在減 壓下乾涸之,獲得式(25)所示之磺酸酯化合物93 6mg(無色 油狀物,收率68%)。 !H_NMR (3 00MHz,CDC13) 5 (ppm) : 1.35(6H,d), 3·19(6Η,s),3.3- 3.5(4Η,m),4.83(2Η,ddt),7.72(1Η, dd),8.16(2Η,dd),8.5 0(1 Η » dd)。I 998 mg of 1,3-benzenedisulfonium dichloride (manufactured by Aldrich Co., Ltd.) was dissolved in 20 mL of dehydrated tetrahydrofuran (hereinafter referred to as THF) under a nitrogen atmosphere. In this solution, 0.85 mL of dehydrated propylene glycol monomethyl ether (hereinafter referred to as PGME) and 60 mg of 60% sodium hydride were added in this order in an ice bath, and the mixture was stirred for 15 minutes. The mixture was stirred at room temperature for 40 minutes, and further added with 6 〇% sodium hydride 5 2 6 mg, and stirred at room temperature for 3 minutes. The reaction mixture was filtered with a fluorite, and washed in the order of dichloroethane PGME. CG-50 (manufactured by Aldrich) and water were added to the filtrate to be added to pH 7, and the fluorite was again subjected to 40 mg (40-38). ) 200800870 Filtering. The filtrate was concentrated, dichloroethane was added, and cerium dioxide gel filtration (18 g of cerium oxide gel) was carried out. After washing with dichloroethane, the combined filtrate was concentrated and dried to make the residue hexane. After washing three times, it was dried under reduced pressure to obtain 93 6 mg of a sulfonic acid ester compound (yield: 68%). !H_NMR (3 00MHz, CDC13) 5 (ppm): 1.35(6H,d), 3·19(6Η,s),3.3-3.5(4Η,m),4.83(2Η,ddt),7.72(1Η, dd ), 8.16 (2Η, dd), 8.5 0 (1 Η » dd).
Rf 値(1,2-二氯乙烷(DCE)): 0·13-0·36。 [實施例2] [化 28]Rf 値 (1,2-dichloroethane (DCE)): 0·13-0·36. [Embodiment 2] [Chem. 28]
众 〇2 9、 (26) 在1,3-苯二磺醯二氯(Aldrich公司製)99 8mg,於氮氛 圍下,添加脫水THF 2 OmL使其溶解。在此溶液中,於水 浴(20°C)下,依順序添加糖醇 0.58mL,60%氫化鈉 35 Img ’照樣經2.5小時攪拌。將反應混合物以氟鎂石過 濾’以二氯乙烷洗淨後,將加在一起之濾液在減壓下濃縮 乾涸。於殘渣添加二氯乙烷,以二氧化矽凝膠過濾(二氧 化矽凝膠8g),進行二氯乙烷洗淨。將加在一起之濾液於 減壓下濃縮乾涸,使殘渣以己烷經3次洗淨後於減壓下乾 -41 - 200800870 (39) 涸’獲得式(26)所示之磺酸酯化合物472rng(無色油狀物, 收率37%)。(9) 99 8 mg of 1,3-benzenedisulfonium dichloride (manufactured by Aldrich Co., Ltd.) was added to dehydrated THF 2 OmL under a nitrogen atmosphere to dissolve. In this solution, 0.58 mL of a sugar alcohol was added in a water bath (20 ° C), and 60% of sodium hydride 35 Img was stirred for 2.5 hours. After the reaction mixture was filtered through a solution of fluorite, washed with dichloroethane, the combined filtrate was concentrated to dryness under reduced pressure. Dichloroethane was added to the residue, and the mixture was filtered through a cerium oxide gel (8 g of a cerium dioxide gel), and washed with dichloroethane. The filtrates which were added together were concentrated to dryness under reduced pressure, and the residue was washed with hexane three times, and then dried under reduced pressure -41 - 200800870 (39) 涸' to obtain a sulfonate compound represented by the formula (26). 472 ng (colorless oil, yield 37%).
Rf 値(DCE):0.22_0.54 ’(DCE:EtOAc=10:l):0.50-0.67 [實施例3] 在合成例1所得之NSO-2 2.664g,於氮氛圍下,添 加乙酸酐1 1 · 7 m L,以超音波予以均一地分散後,於水浴Rf 値(DCE): 0.22_0.54 '(DCE: EtOAc = 10:1): 0.50-0.67 [Example 3] 2.76 g of NSO-2 obtained in Synthesis Example 1 and acetic anhydride 1 was added under nitrogen atmosphere 1 · 7 m L, uniformly dispersed by ultrasonic waves, in a water bath
(20 °C )下,添加脫水吡啶4· 8mL,在室溫經26小時攪拌。 其後,在反應系內添加二乙基醚8 0mL,以超音波予以均 一地分散後吸引過濾,使濾物在減壓下乾涸獲得式(2 7)所 示之磺酸吡啶鹽2.9 77 g(白色粉末,收率83%)。 [化 29](20 ° C), 4·8 mL of dehydrated pyridine was added, and the mixture was stirred at room temperature for 26 hours. Thereafter, 80 mL of diethyl ether was added to the reaction system, uniformly dispersed by ultrasonic wave, and then suction-filtered, and the filtrate was dried under reduced pressure to obtain a sulfonic acid pyridinium salt of the formula (27). (White powder, yield 83%). [化29]
S〇3 卜 4HiQ (27) 在所得之磺酸吡啶鹽1.50 6g,於氮氛圍下,添加氯化 亞硫醯7.5mL於80°C進行8小時攪拌。使反應混合物在 減壓下濃縮乾涸,獲得式(2 8)所示之磺酸氯化物之粗生成 物(褐色粉末)。 [化 30]S〇3 Bu 4HiQ (27) Into the obtained sulfonic acid pyridinium salt 1.50 6 g, 7.5 mL of thionyl chloride was added thereto under nitrogen atmosphere, and the mixture was stirred at 80 ° C for 8 hours. The reaction mixture was concentrated to dryness under reduced pressure to give a crude product (yellow powder) of the sulfonic acid chloride of formula (28). [化30]
(28) -42· 200800870 (40) 於所得之褐色粉末,於水浴(20°C)下,依順序添加脫 水吡啶15mL,脫水PGME 3mL,在室溫經2小時攪拌。 將反應混合物於減壓下濃縮乾涸後,以二氯乙烷進行2次 共沸,將殘渣以二氧化矽凝膠柱層析術(二氧化矽凝膠 5 0g,二氯乙烷—二氯乙烷:乙酸乙酯1〇:1)精製,使Rf値 (二氯乙烷:乙酸乙酯10:1)0.4〜0.5附近之餾份(fraction) 在減壓下進行濃縮乾涸,獲得式(2 9)所示之磺酸酯化合物 712mg(橙色油狀物,收率48%)。(28) -42· 200800870 (40) In the obtained brown powder, 15 mL of dehydrated pyridine was added in a water bath (20 ° C), and 3 mL of PGME was dehydrated, and the mixture was stirred at room temperature for 2 hours. The reaction mixture was concentrated to dryness under reduced pressure, and then azeotroped twice with dichloroethane, and the residue was subjected to cerium oxide gel column chromatography (cerium oxide gel 50 g, dichloroethane-dichloro Ethane: Ethyl acetate 1 〇: 1) Purification, Rf 値 (dichloroethane: ethyl acetate 10:1) 0.4~0.5 fractions are fractionated and concentrated under reduced pressure to obtain the formula ( 2 9) The sulfonate compound shown was 712 mg (yellow oil, yield 48%).
Ms(ESI+,MeOH— 0.02M NH4OAc) : 1 207[M + NH3] +Ms (ESI+, MeOH - 0.02M NH4OAc): 1 207 [M + NH3] +
[比較例1] [化 32][Comparative Example 1] [Chem. 32]
在1,3-苯一磺醯二氯(Aldrich製)l.〇〇3g,於氮氛圍 下,添加吡啶l〇mL予以溶解後,在水浴(2〇。〇下,添加 環己醇0 · 9 OmL,在室溫經2 0小時攪拌。使反應混合物在 二乙基醚50mL中傾注(pour),使不溶固體以吸引過濾除 -43- 200800870 (41) 去。使濾液在減壓下濃縮乾涸,在使甲苯共沸進行1次 後,進行二氧化矽凝膠過濾(二氧化矽凝膠20g),進行二 氯乙烷洗淨。將加在一起之濾液於減壓下濃縮乾涸,獲得 式(30)所示之磺酸酯化合物 529mg(無色油狀物,收率 36%)。 h-NMR (300MHz,CDC13) 5 (ppm) : 1.2- 1·9(20Η, m),4.63(2Η,dddd),7.75(1Η,dd),8.16(2Η,dd), • 8·45(1Η,dd) °In 1,3-benzenesulfonate dichloride (manufactured by Aldrich) l. 〇〇 3g, in a nitrogen atmosphere, add pyridine l〇mL to dissolve, and then in a water bath (2 〇. under the ,, add cyclohexanol 0 · 9 OmL, stirred at room temperature for 20 hours. The reaction mixture was poured into 50 mL of diethyl ether, and the insoluble solid was removed by suction filtration to remove -43-200800870 (41). The filtrate was concentrated under reduced pressure. After the azeotrope was carried out once, the toluene was subjected to azeotropic gel filtration (20 g of a cerium oxide gel), and the mixture was washed with dichloroethane. The combined filtrate was concentrated under reduced pressure to dryness. The sulfonate compound represented by the formula (30) was 529 mg (colorless oil, yield 36%). h-NMR (300 MHz, CDC13) 5 (ppm): 1.2 - 1·9 (20 Η, m), 4.63 ( 2Η, dddd), 7.75 (1Η, dd), 8.16(2Η, dd), • 8·45(1Η, dd) °
Rf 値(DCE) : 0·5 — 0·6 [比較例2] [化 33]Rf 値(DCE) : 0·5 — 0·6 [Comparative Example 2] [Chem. 33]
• 以實施例3記載之方法自磺酸吡啶鹽(27)260mg獲得 磺酸氯化物(2 8)之粗生成物。相對於所得之磺酸氯化物 (2 8),在水浴(15 °C)下添加脫水吡啶2.5 mL,以超音波予 以均一地分散後,在水浴(1 5 °C )下添加脫水環己醇 0.5mL,於室溫經7小時攪拌。使反應混合物傾注(pou〇 於二乙基醚1 5mL中,將不溶固體以減壓過濾除去,使濾 液在減壓下乾涸,使甲苯共沸進行2次獲得式(3 1)所示之 含有磺酸酯化合物之油狀物326mg。 MS)ESI+,in MeOH-0.02M NH4 OAc) : 1247[M + NH3] + -44- 200800870 (42) ,1165([M-C6H10 + HN3]+,1 083 [M-2C6H10 + NH3]+〇 藉由上述MS分析値,在反應中或精製操作中,產生 環己基之脫離,可知在最終物中含有遊離之磺酸。又所得 之油狀物,可藉由乙酸乙酯及水所致分液洗淨處理或二氧 化矽凝膠精製處理產生分解,並無法進行更進一步之精 製。藉由該等事實,環己基之脫離性與PGME基比較爲 高,精製困難爲自明。 [比較例3 ] [化 34]A crude product of sulfonic acid chloride (28) was obtained from 260 mg of the sulfonic acid pyridinium salt (27) by the method described in Example 3. Add 2.5 mL of dehydrated pyridine to the obtained sulfonate chloride (28) in a water bath (15 ° C), uniformly disperse it by ultrasonic wave, and add dehydrated cyclohexanol in a water bath (15 ° C). 0.5 mL was stirred at room temperature for 7 hours. The reaction mixture was poured (pou oxime in 15 mL of diethyl ether, and the insoluble solid was removed by filtration under reduced pressure, and the filtrate was dried under reduced pressure, and the toluene was azeotroped twice to obtain the compound represented by the formula (3 1). Oil of sulfonate compound 326 mg. MS) ESI+, in MeOH-0.02M NH4 OAc) : 1247 [M + NH3] + -44 - 200800870 (42) , 1165 ([M-C6H10 + HN3]+, 1 083 [M-2C6H10 + NH3] + 値 by the above MS analysis 値, during the reaction or purification operation, the cyclohexyl group is detached, it is known that the final product contains free sulfonic acid. Decomposition occurs by liquid separation washing treatment by ethyl acetate or water or gelation of cerium oxide gel, and further purification cannot be performed. By virtue of these facts, the detachability of cyclohexyl group is higher than that of PGME group. The difficulty in refining is self-evident. [Comparative Example 3] [Chem. 34]
以實施例 3記載之方法獲得來自磺酸吡啶鹽 (27)25 1 mg之磺酸氯化物(28)之粗生成物。在所得之磺酸 氯化物(28),於水浴(15°C)下,添加脫水吡啶2.0mL,以 超音波予以均一地分散後,水浴(15 t)下,添加脫水異丁 醇0.5mL,於室溫經20小時攪拌。將反應混合物傾注 (pour)於二乙基醚12.5mL中,使不溶固體以減壓過濾除 去,使濾液在減壓下乾涸,進行甲苯共沸1次,獲得式 (32)所示之含有磺酸酯化合物之油狀物84mg。 所得之油狀物可藉由甲苯及水所致分液洗淨處理或二 氧化矽凝膠精製處理而產生分解,而無法再進行更進一步 -45- 200800870 (43) 之精製。因該等事實,吾人可知異丁基酯分解性高’精製 爲困難。A crude product of 25 1 mg of sulfonic acid chloride (28) derived from pyridinium sulfonate (27) was obtained by the method described in Example 3. Add 2.0 mL of dehydrated pyridine to the obtained sulfonate chloride (28) in a water bath (15 ° C), uniformly disperse it by ultrasonic wave, and add 0.5 mL of dehydrated isobutanol in a water bath (15 t). Stir at room temperature for 20 hours. The reaction mixture was poured (pour) in 12.5 mL of diethyl ether, and the insoluble solid was removed by filtration under reduced pressure. The filtrate was dried under reduced pressure, and toluene was azeotroped once to obtain a sulphur of the formula (32). The oil of the acid ester compound was 84 mg. The obtained oily substance can be decomposed by a liquid separation washing treatment by toluene or water or a cerium oxide gel refining treatment, and further purification of -45-200800870 (43) can no longer be carried out. Due to these facts, it is known that it is difficult to refine the isobutyl ester.
[比較例4 ] [化 35][Comparative Example 4] [Chem. 35]
以實施例3記載之方法自磺酸吡啶鹽(27) 101 mg獲得 磺酸鹽化物(2 8)之粗生成物。在所得之磺酸鹽化物(28), 於水浴(1 5 °C )下添加脫水吡Π定1 . 〇 m l,以超音波予以均一 地分散後,在水浴(1 5 °C )下添加脫水正丁醇〇 · 2tnL,在室 溫經4小時攪拌。以TLC雖可追蹤反應但是來自目的物 之低極性點則僅止於發生。因此基於事實,正丁基酯 (3 3 ),爲了使反應性降低或分解性提高,要收率良好的合 成則有困難爲自明。 [比較例5 ] [化 36]The crude product of the sulfonate (28) was obtained from 101 mg of the sulfonic acid pyridinium salt (27) by the method described in Example 3. Add the dehydrated pyridinium 1. 〇ml to the obtained sulfonate (28) in a water bath (15 ° C), uniformly disperse it by ultrasonic wave, and add dehydration in a water bath (15 ° C). N-butanol oxime 2tnL was stirred at room temperature for 4 hours. Although the TLC can track the reaction, the low polarity point from the target only ends. Therefore, based on the fact, in order to lower the reactivity or to improve the decomposability of n-butyl ester (3 3 ), it is difficult to obtain a synthesis with good yield. [Comparative Example 5] [Chem. 36]
(34) -46- 200800870 (44) 以實施例3記載之方法自磺酸吡啶鹽(2 7)10Omg獲得 磺酸鹽化物(28)之粗生成物。在所得之磺酸鹽化物(28), 於水浴(15°C)下添加脫水吡啶l.OmL,以超音波予以均一 地分散後,在水浴(15t)下添加脫水環庚醇〇.2mL,在室 溫經4小時攪拌。雖可依TLC追蹤反應但是來自目的物 之低極性點僅止於發生。基於此事實爲了使環庚基酯(34) 反應性低或分解性高,則要收率良好的合成爲有困難爲自 赢 明。 [實施例4] [化 37](34) -46-200800870 (44) A crude product of the sulfonate compound (28) was obtained from the sulfonic acid pyridinium salt (27) (10 mg) in the method described in Example 3. Adding dehydrated pyridine 1.0 mL to the obtained sulfonate (28) in a water bath (15 ° C), uniformly dispersing it by ultrasonic wave, and adding 0.2 mL of dehydrated cycloheptanol in a water bath (15 t). Stir at room temperature for 4 hours. Although the reaction can be followed by TLC, the low polarity point from the target only ends. Based on the fact, in order to make the cycloheptyl ester (34) have low reactivity or high decomposability, it is difficult to synthesize a good yield. [Embodiment 4] [Chem. 37]
(35) 在4-苯乙烯磺酸鈉50.00g(Aldrich公司製),添加純 水250mL予以溶解,添加陽離子交換樹脂Dowex 6 5 0C(H 型,以下簡稱650C)25ml進行5分鐘攪拌,在經分餾之上 澄液,添加6 50C 25ml進行5分鐘攪拌,進而在經分餾之 上澄液,添加650C 50ml進行5分鐘攪拌,最終將經分餾 之上澄液,使用650C(500ml,餾出溶劑:水)以柱色譜精 製。 -47- 200800870 (45) 相對於被離子父換所得之4 -苯乙烯磺酸之水溶液, 將甲醇100mL及吡啶27mL依順序添加,在分鐘攪拌 後,在減壓下濃縮乾涸,使用甲醇進行1次共沸操作後添 加甲醇58mL予以溶解’將所得之溶液在二乙基醚116丄 中一邊攪拌一邊滴下。在室溫經15分鐘攪拌後,除去上 澄液,使殘渣在減壓下乾涸獲得4 -苯乙烯磺酸呖d定鹽 50.20g(白色粉末,收率85%)。 相對於以上述方法所得之4-苯乙烯磺酸吡啶鹽粗精 製物38.41g,添加氯化亞硫醯115mL,進行12分鐘加熱 回流,在放冷至室溫後,在減壓下濃縮乾涸。相對於所得 之淡黃色油狀物添加無水吡啶4mL予以溶解後,添加無 水PGME l.OmL,藉由超音波及玻璃棒粉碎予以懸濁,在 室溫經3 0分鐘攪拌。使反應系在減壓下濃縮乾涸,以 1,2-二氯乙烷經1次共沸後,經二氧化矽凝膠過濾(二氧化 矽凝膠8g,溶劑及洗淨液:1,2-二氯乙烷)。 將濾液在減壓下濃縮乾涸,獲得爲單體之磺酸酯化合 物之粗精製物22.77g。將所得之單體粗精製物,以二氧化 矽凝膠柱層析術(溶劑:二氯乙烷—二氯乙烷:乙酸乙酯 = 20:1 — 10:1)精製,獲得磺酸酯化合物單體11.98g(無色液 體,收率32%)。 相對於上述方法所得之磺酸酯化合物單體9.31g,在 氮氛圍下,添加乙酸乙酯酐3 7mL予以溶解’藉由氮發泡 脫氣後,使AIBN 23.5mg之乙酸乙酯酐〇.38mL溶液在氮 氛圍下添加,在8 (TC經6小時攪拌。在放冷至室溫後,減 -48- 200800870 (46) 壓濃縮至約30mL爲止,在甲醇20OmL —面攪拌一面傾注 (pour)。在室溫經20分鐘攪拌後,予以吸引過濾,使濾 物減壓乾燥獲得式(3 5)所示之聚苯乙烯磺酸酯化合物 5.01g(白色粉末,收率54%)。 ^-NMR (300MHz » CDC13) δ (ppm) : 1.1 - 1.9(6Η » br),3·1— 3·3(3Η,br),3·3— 3·6(2Η,br),4.6— 4.9(1Η, br),6·4— 6·9(2Η,br),7.5— 7·9(2Η,br)。 GPC:Mn(數平均分子量)26408 ; Mw(重量平均分子 量)7 1 420; Mz(Z平均分子量)235 146 就上述實施例1〜4及比較例1所得之磺酸酯化合 物,測定TG-DTA。使評價結果如表1所示。此外,測定 裝置及條件係如以下。 測定裝置:熱分析裝置系統 WS002, Macscience公 司製昇溫速度:5t:/分 [表 1 ](35) Into 50.00 g of sodium 4-styrenesulfonate (manufactured by Aldrich Co., Ltd.), 250 mL of pure water was added and dissolved, and 25 ml of a cation exchange resin Dowex 6 5 0C (H type, hereinafter abbreviated as 650 C) was added thereto, followed by stirring for 5 minutes. Fractionate the supernatant, add 6 50C 25ml for 5 minutes to stir, and then distillate the solution, add 650C 50ml for 5 minutes to stir, finally fractionate the supernatant, use 650C (500ml, distillate solvent: Water) is purified by column chromatography. -47- 200800870 (45) 100 mL of methanol and 27 mL of pyridine were added sequentially to the aqueous solution of 4-styrenesulfonic acid obtained by the ion father. After stirring for a while, the dried hydrazine was concentrated under reduced pressure, and methanol was used. After sub-azeotropic operation, 58 mL of methanol was added and dissolved. The obtained solution was dropped while stirring in diethyl ether 116 Torr. After stirring at room temperature for 15 minutes, the supernatant liquid was removed, and the residue was dried under reduced pressure to yield 50.20 g (yield of white powder, yield: 85%). To 38.41 g of the crude 4-styrenesulfonate salt obtained by the above method, 115 mL of thionylsulfonate was added, and the mixture was heated under reflux for 12 minutes. After cooling to room temperature, the dried hydrazine was concentrated under reduced pressure. After dissolving 4 mL of anhydrous pyridine with respect to the obtained pale yellow oil, water-free PGME 1.0 mL was added, and the mixture was suspended by ultrasonic waves and a glass rod, and stirred at room temperature for 30 minutes. The reaction system was concentrated to dryness under reduced pressure, and azeotroped with 1,2-dichloroethane for 1 time, and then filtered through a cerium oxide gel (8 g of cerium oxide gel, solvent and washing liquid: 1, 2) - Dichloroethane). The filtrate was concentrated to dryness under reduced pressure to give 22,77 g of crude material of the sulfonic acid ester compound. The obtained monomer crude product is purified by cerium oxide gel column chromatography (solvent: dichloroethane-dichloroethane: ethyl acetate = 20:1 - 10:1) to obtain a sulfonate. 11.98 g of compound monomer (colorless liquid, yield 32%). 9.31 g of the sulfonate compound monomer obtained by the above method was added to 37 mL of ethyl acetate anhydride under a nitrogen atmosphere to dissolve. After degassing by nitrogen foaming, AIBN 23.5 mg of ethyl acetate anhydride was obtained. 38 mL of the solution was added under a nitrogen atmosphere, and stirred at 8 (TC for 6 hours. After cooling to room temperature, the concentration was reduced to -30 mL by subtracting -48-200800870 (46), and pouring was carried out while stirring at 20 mL of methanol. After stirring at room temperature for 20 minutes, it was suction-filtered, and the filtrate was dried under reduced pressure to obtain 5.01 g (white powder, yield 54%) of the polystyrene sulfonate compound represented by formula (3). -NMR (300MHz » CDC13) δ (ppm) : 1.1 - 1.9(6Η » br),3·1—3·3(3Η,br),3·3—3·6(2Η,br),4.6— 4.9 (1Η, br), 6·4—6·9 (2Η, br), 7.5—7·9 (2Η, br) GPC: Mn (number average molecular weight) 26408; Mw (weight average molecular weight) 7 1 420; Mz (Z average molecular weight) 235 146 TG-DTA was measured for the sulfonate compounds obtained in the above Examples 1 to 4 and Comparative Example 1. The evaluation results are shown in Table 1. The measurement apparatus and conditions are as follows. Measuring device Thermal analyzer system WS002, Macscience Company Ltd. temperature rise rate: 5t: / min [Table 1]
分解點(發熱峰値) 實 施 例 1 1 3 8 °C 實 施 例 2 22 2 °C 實 施 例 3 13 4〇C 實 施 例 4 14 1 °C 比 較 例 1 8 6〇CDecomposition point (fever peak) Example 1 1 3 8 °C Example 2 22 2 °C Example 3 13 4〇C Example 4 14 1 °C Comparison Example 1 8 6〇C
又,將相對於實施例1〜4所得之各磺酸酯化合物及 -49 - 200800870 (47) NSO-2之各種溶劑之溶解性,以以下之方法評價。結果如 表2所示。 〈溶解性評價法〉 相對於各樣本添加質量比20倍量之各溶劑,加上室 溫攪拌,加熱攪拌,或超音波振動試驗溶解。就加熱攪拌 之物在冷卻至室溫後進行觀察。表中0表示完全溶解,而 完全無固體析出或固體之殘存者,表中X表示固體析出或 固體殘存。 [表2] 二甲基乙醯胺 丙酮 乙酸乙酯 二氯乙烷 甲苯 異丁醇 實施例1 〇 〇 〇 〇 〇 X 實施例2 〇 〇 〇 〇 〇 X 實施例3 〇 〇 〇 〇 〇 X 實施例4 〇 〇 〇 〇 〇 X NSO-2 〇 X X X X 〇Further, the solubility of each of the sulfonic acid ester compounds obtained in Examples 1 to 4 and various solvents of -49 - 200800870 (47) NSO-2 was evaluated by the following method. The results are shown in Table 2. <Solubility evaluation method> Each solvent having a mass ratio of 20 times was added to each sample, and stirred at room temperature, heated and stirred, or dissolved by ultrasonic vibration test. The object which was heated and stirred was observed after cooling to room temperature. In the table, 0 indicates complete dissolution, and there is no solid precipitation or residual of solid. In the table, X indicates solid precipitation or solid residue. [Table 2] Dimethylacetamide acetone ethyl acetate dichloroethane toluene isobutanol Example 1 〇〇〇〇〇X Example 2 〇〇〇〇〇X Example 3 〇〇〇〇〇X implementation Example 4 〇〇〇〇〇X NSO-2 〇XXXX 〇
如表2所示’實施例1〜4所得之礦酸醋化合物’與 具有遊離磺酸之NSO-2比較’相對於各種有機溶劑顯示 高溶解性爲自明。 [實施例5] 準照實施例3所得之礦酸醋化合物(29) 1 3 6mg ’與日 -50- 200800870 (48) 本化學界會報(Bulletin of Chemical Society of Japan), 1 994年,第67卷,P.1 749-1 752所記載之方法予以合 成,相對於下述式所示之苯基四苯胺(P T A) 5 0 m g之混合 物,將二甲基乙醯胺(DMAc)l. 44ml,在氮氛圍下添加並 溶解,進而在氮氛圍下添加環己醇4.28ml在室溫攪拌, 獲得綠色透明之清漆(固形成分3.3質量%)。所得之清 漆,即使冷卻至-25 °C爲止,則無法見到固體析出。 [化 38] H- [實施例6] 將實施例5所得之清漆’至眼前爲止進行40分鐘臭 氧洗淨之IT0基板上,進行旋轉塗佈,其後,予以燒成, 形成膜厚22nm之電荷輸送性薄膜(電洞輸送性薄膜)°所 得之電荷輸送性薄膜爲非晶質固體。 [實施例7] 將實施例5所得之清漆,至眼前爲止進行40分鐘臭 氧洗淨之IT0基板上’進行旋轉塗佈’其後’予以燒成’ 形成膜厚67nm之電荷輸送性薄膜(電洞輸送性薄膜)。所 得之電荷輸送性薄膜爲非晶質固體。 [實施例8] -51 - 200800870 (49) 相對於實施例4所得之磺酸酯化合物(3 5)11 6mg,與 上述所示 PTA50mg,之混合物,將二甲基乙醯胺 (DMAc)2.40ml在氮氛圍下添加予以溶解,進而在氮氛圍 下添加環己醇2.40ml於室溫攪拌,獲得綠色透明之清漆 (固形成分3.5質量%)。所得之清漆,即使冷卻至0°C亦無 法見到固體析出。 將所得之清漆,至眼前爲止經40分鐘臭氧洗淨之 φ ITO基板上,進行旋轉塗佈,其後,予以燒成,形成膜厚 3 6nm之電荷輸送性薄膜(電洞輸送性薄膜)。 所得之電荷輸送性薄膜爲非晶質固體。 [比較例6 ] ( + )·1〇·在樟腦磺酸206mg,與PTA 100mg之混合 物,將DM Ac 1.8 7ml,於氮氛圍下添加並溶解,進而添加 環己醇5.53ml在室溫攪拌,獲得綠色透明之清漆(固形成 分4.2質量%)。使用所得之清漆,依照實施例6記載之方 法獲得膜厚12nm之電荷輸送性薄膜(電洞輸送性薄膜)。 所得之電荷輸送性薄膜爲非晶質固體。 [比較例7] 與比較例6同樣,獲得膜厚24nm之電荷輸送性薄膜 (電洞輸送性薄膜)。 所得之電荷輸送性薄膜爲非晶質固體。 -52- 200800870 (50) [比較例8 ] 在PTA l.OOOg,使5-磺基水楊酸二水合物2.298g, 及Ν,Ν·二甲基乙醯胺(DMA〇17.50g在氮氛圍下添加並溶 解,在所得之溶液添加環己醇52.50g並攪拌,來調製清 漆(固形成分4·1質量%)。 將所得之清漆以旋轉塗佈法於進行40分鐘臭氧洗淨 之ΙΤΟ玻璃基板上塗佈後,在空氣中於180 °C進行2小時 φ 燒成,獲得膜厚21nm之電荷輸送性薄膜(電洞輸送性薄 膜)。 將上述實施例6〜8及比較例6〜8所使用之清漆黏 ^ 度,薄膜製作時燒成條件,薄膜之膜厚,游離電位(以下 簡稱Ip)値一倂示於表3。 此外,清漆黏度,膜厚,IP値可以下述裝置測定。 [1 ]黏度 • E型黏度計(ELD-50,東京計器公司製),測定溫As shown in Table 2, the ratio of the mineral acid vinegar compound 'obtained in Examples 1 to 4 to NSO-2 having a free sulfonic acid' showed high solubility with respect to various organic solvents. [Example 5] The mineral acid vinegar compound (29) obtained in Example 3 (1) 6 3 mg 'and Japanese-50-200800870 (48) The Bulletin of Chemical Society of Japan, 194, The method described in Vol. 67, p. 1 749-1 752 is synthesized, and dimethylacetamide (DMAc) is added to a mixture of phenyltetraphenylamine (PTA) 50 mg as shown in the following formula. 44 ml was added and dissolved under a nitrogen atmosphere, and 4.28 ml of cyclohexanol was added under a nitrogen atmosphere and stirred at room temperature to obtain a green transparent varnish (solid content: 3.3% by mass). The obtained varnish could not be solidified even when it was cooled to -25 °C. [Example 38] The varnish obtained in Example 5 was spin-coated on an IT0 substrate which was subjected to ozone cleaning for 40 minutes to the front of the eye, and then fired to form a film thickness of 22 nm. The charge transporting film (hole transporting film) obtained by the charge transporting film is an amorphous solid. [Example 7] The varnish obtained in Example 5 was subjected to 'spin coating' on an IT0 substrate which was subjected to ozone cleaning for 40 minutes, and then "fired" to form a charge transporting film having a film thickness of 67 nm (electrical Hole transport film). The resulting charge transporting film is an amorphous solid. [Example 8] -51 - 200800870 (49) A mixture of 11 6 mg of the sulfonate compound (3 5) obtained in Example 4 and 50 mg of the PTA shown above, dimethylacetamide (DMAc) 2.40 The solution was dissolved under a nitrogen atmosphere, and then 2.40 ml of cyclohexanol was added under a nitrogen atmosphere and stirred at room temperature to obtain a green transparent varnish (solid content: 3.5% by mass). The resulting varnish did not show solid precipitation even after cooling to 0 °C. The obtained varnish was spin-coated on a φ ITO substrate which was washed with ozone for 40 minutes, and then fired to form a charge transporting film (hole transporting film) having a film thickness of 36 nm. The obtained charge transporting film was an amorphous solid. [Comparative Example 6] (+)·1〇· In a mixture of 206 mg of camphorsulfonic acid and 100 mg of PTA, DM Ac 1.8 7 ml was added and dissolved in a nitrogen atmosphere, and further 5.53 ml of cyclohexanol was added and stirred at room temperature. A green transparent varnish (solid content of 4.2% by mass) was obtained. Using the obtained varnish, a charge transporting film (hole transporting film) having a film thickness of 12 nm was obtained by the method described in Example 6. The obtained charge transporting film was an amorphous solid. [Comparative Example 7] A charge transporting film (hole transporting film) having a film thickness of 24 nm was obtained in the same manner as in Comparative Example 6. The obtained charge transporting film was an amorphous solid. -52- 200800870 (50) [Comparative Example 8] In PTA 1.00 g, 2.128 g of 5-sulfosalicylic acid dihydrate, and hydrazine, hydrazine dimethyl acetamide (DMA 〇 17.50 g in nitrogen) The mixture was added and dissolved in an atmosphere, and 52.50 g of cyclohexanol was added to the resulting solution and stirred to prepare a varnish (solid content of 4.1% by mass). The obtained varnish was subjected to spin coating for 40 minutes of ozone washing. After coating on a glass substrate, it was fired at 180 ° C for 2 hours in air to obtain a charge transporting film (hole transporting film) having a film thickness of 21 nm. The above Examples 6 to 8 and Comparative Example 6 were The varnish viscosity used in 8 films, the firing conditions during film production, the film thickness of the film, and the free potential (hereinafter referred to as Ip) are shown in Table 3. In addition, the varnish viscosity, film thickness, IP値 can be as follows [1] Viscosity • E-type viscometer (ELD-50, manufactured by Tokyo Keiki Co., Ltd.), measuring temperature
度:2 0 °CDegree: 2 0 °C
[2] 膜厚 以表面形狀測定裝置(DEKTAK3ST,日本真空技術公 司製)測定。 [3] IP 値 以光電子分光裝置(AC-2,理硏計器公司製)測定。 -53- (51) 200800870 [表3] 清漆固形成分濃度 清漆黏度 燒成條件 膜厚 Ip 償量%) (mPa · s) (nm) 實施例6 3.3 10.5 220°C,30 分 22 5.56 實施例7 3.3 10.5 220°C,30 分 67 5.56 實施例8 3.5 4.8 220°C,30 分 36 5.57 比較例6 4.2 11.5 180°C,2 小時 12 5.49 比較例7 4.2 11.5 140°C,2 小時 24 5.47 比較例8 4.1 11.8 180°C,2 小時 21 5.37[2] The film thickness was measured by a surface shape measuring device (DEKTAK3ST, manufactured by Nippon Vacuum Technology Co., Ltd.). [3] IP 测定 Measured by a photoelectron spectroscopic device (AC-2, manufactured by Sigma). -53- (51) 200800870 [Table 3] varnish solid concentration concentration varnish viscosity firing condition film thickness Ip replenishment %) (mPa · s) (nm) Example 6 3.3 10.5 220 ° C, 30 minutes 22 5.56 Example 7 3.3 10.5 220 ° C, 30 min 67 5.56 Example 8 3.5 4.8 220 ° C, 30 min 36 5.57 Comparative Example 6 4.2 11.5 180 ° C, 2 hours 12 5.49 Comparative Example 7 4.2 11.5 140 ° C, 2 hours 24 5.47 Comparative Example 8 4.1 11.8 180 ° C, 2 hours 21 5.37
如表3所示,在實施例6〜8所得薄膜之Ip値顯示充 分高的値,磺酸酯化合物(29),(35)藉由塗膜後之加熱處理 可作爲良好的電荷感受性物質之機能爲自明。 [實施例9] 將以實施例6之方法所形成電洞輸送性薄膜之ITO基 板導入於真空蒸鍍裝置內,使α-NPD,Alq3,LiF,A1依 順序蒸鑛,獲得OLED兀件。膜厚各自爲40nm,60nm, 0.5nm,lOOnm,因各自成爲8xl(T4Pa以下之壓力故進行 蒸鍍操作。蒸鍍率係除去LiF而成爲0.3〜〇.4nm/s,關於 LiF則爲0.02〜0.04nm/s。蒸鍍操作間之移動操作係在真 空中進行。 [實施例10] -54- 200800870 (52) 將以竇施例8之方法形成電洞輸送性薄膜之ITO基板 導入真空蒸鍍裝置內,在與實施例9同條件,將α-NPD, Alq3,LiF,A1依順序蒸鍍,獲得OLED元件。 [比較例9 ] 將ITO玻璃基板經40分鐘臭氧洗淨後,導入真空蒸 鍍裝置內,與實施例9同條件,將a-NPD,Alqs,LiF, A1依順序蒸鍍,獲得OLED元件。 [比較例10] 將以比較例6之方法形成電洞輸送性薄膜之ITO基板 導入真空蒸鍍裝置內,與實施例9同條件,將a-NPD, Alq3,LiF,A1依順序蒸鍍,獲得〇LED元件。 [比較例1 1 ] φ 將以比較例7之方法形成電洞輸送性薄膜之ITO基板 導入真空蒸鍍裝置內,與實施例9同條件,將a_NPD, Alq3,LiF,A1依順序蒸鍍,獲得〇LED元件。 [比較例1 2 ] 將以比較例8之方法形成電洞輸送性薄膜之ITO基板 導入真空蒸鍍裝置內,與實施例9同條件,將a - N P D, Alq3,LiF ’ A1依順序蒸鍍,獲得〇LED元件。 將在上述實施例9,1〇,比較例9〜12所得之OLED元 -55- 200800870 (53) 件之特性,使用下述裝置來測定。結果如表4所示。 [1] EL測定系統=發光量子效率測定裝置(ELI 003, Precise Gauges 公司製)As shown in Table 3, the Ip of the films obtained in Examples 6 to 8 showed sufficiently high enthalpy, and the sulfonate compounds (29) and (35) were treated as a good charge-sensitive substance by heat treatment after coating. The function is self-evident. [Example 9] An ITO substrate formed of the hole transporting film formed by the method of Example 6 was introduced into a vacuum vapor deposition apparatus, and α-NPD, Alq3, LiF, and A1 were sequentially subjected to vapor deposition to obtain an OLED element. The film thicknesses were 40 nm, 60 nm, 0.5 nm, and 100 nm, respectively, and the vapor deposition operation was performed at a pressure of 8×1 (T4Pa or less. The vapor deposition rate was 0.3 to 0.4 nm/s for removing LiF and 0.02 to 1 for LiF). 0.04 nm/s. The moving operation of the vapor deposition operation was carried out in a vacuum. [Example 10] -54- 200800870 (52) The ITO substrate on which the hole transporting film was formed by the method of Sinus 8 was introduced into a vacuum steaming. In the plating apparatus, α-NPD, Alq3, LiF, and A1 were sequentially vapor-deposited under the same conditions as in Example 9 to obtain an OLED device. [Comparative Example 9] The ITO glass substrate was washed with ozone for 40 minutes, and then introduced into a vacuum. In the vapor deposition apparatus, a-NPD, Alqs, LiF, and A1 were sequentially vapor-deposited in the same manner as in Example 9 to obtain an OLED device. [Comparative Example 10] A hole transporting film was formed in the same manner as in Comparative Example 6. The ITO substrate was introduced into a vacuum vapor deposition apparatus, and a-NPD, Alq3, LiF, and A1 were sequentially vapor-deposited under the same conditions as in Example 9 to obtain a ruthenium LED element. [Comparative Example 1 1] φ The method of Comparative Example 7 was used. The ITO substrate on which the hole transporting film was formed was introduced into a vacuum vapor deposition apparatus, and a_NPD was carried out under the same conditions as in Example 9. , Alq3, LiF, and A1 were sequentially vapor-deposited to obtain a ruthenium LED element. [Comparative Example 1 2] An ITO substrate in which a hole transporting film was formed by the method of Comparative Example 8 was introduced into a vacuum vapor deposition apparatus, and was the same as in Example 9. Under the conditions, a-NPD, Alq3, LiF'A1 were sequentially vapor-deposited to obtain a ruthenium LED element. The OLED element obtained in the above-mentioned Example 9, 1 〇, Comparative Examples 9 to 12 was -55-200800870 (53) The characteristics were measured using the following apparatus. The results are shown in Table 4. [1] EL measurement system = luminescence quantum efficiency measurement device (ELI 003, manufactured by Precise Gauges)
[2] 電壓計(電壓發生源):可編程序(P rogrammable)直 流電壓/電流源(R6145,Advantest公司製) [3] 電流計:數位多功能電表(digital multimeter) (R65 8 1 D,Advantest 公司製)[2] Voltmeter (voltage generation source): Programmable (P rogrammable) DC voltage/current source (R6145, manufactured by Advantest) [3] Ammeter: digital multimeter (R65 8 1 D, Advantest company)
[4] 亮度計:LS-1 10(Minolta 公司製) [表4] 膜厚 電流密度 電壓 亮度 電流效率 發光開始 最高亮度 (nm) (mA/cm2) (V) (cd/m2) (cd/A) 電壓(V) (cd/m2) 實施例9 22 10.1 7.0 317 3.13 2.75 29830 實施例10 36 0.21 7.0 7.0 3.41 4.00 4167 10 10.5 285 2.85 比較例9 — 0.37 7.0 1.2 0.32 4.50 10640 10 9.2 330 3.3 4.50 10640 比較例10 24 0.419 7.0 8.89 2.12 4.00 5540 比較例π 12 10 10.2 239 2.39 6.50 4410 比較例12 21 2.86 7.0 101 3.5 2.75 18799 10 8.1 410 4.1 2.75 18799 如表4所示,在具備自實施例6所得之清漆所製作之 電洞輸送性薄膜的OLED元件(實施例9),與不含此電洞 -56- 200800870 (54) 輸送性薄膜之OLED元件比較,驅動電壓會降低 率及最高亮度爲同等以上爲自明。 又實施例9之OLED元件,作爲摻雜劑並非 規定之磺酸酯化合物即使與使用5-SSA之比較例 件比較,驅動電壓降低使最高亮度上昇爲自明。 施例9所製作之OLED元件之發光面之均一性爲 斑無法被確認。 φ 實施例10之OLED元件,與實施例9之 件,同時顯示良好電流效率爲自明。亦即實施例 磺酸酯化合物,成膜後,作爲電洞注入層用電子 ^ 質可有效地機能爲自明。 [實施例11] 在實施例3所得之磺酸酯化合物(29)24.5mg 文獻4記載之方法所合成之電荷輸送性主物 19 .Omg之混合物,添加甲苯3.24ml,在室溫攪 橙色透明清漆(固形成分濃度1·5質量%)。所得 即使冷卻至-25°C,亦無法見到固體析出。由! 知,該磺酸酯化合物,相對於如BBD般之低極 與溶解性高的電荷輸送性主物質倂用下,即使僅 般之低極性溶劑,在不使固體析出下可調製電荷 漆爲自明。 ,電流效 本發明所 1 2之元 此外,實 良好,黑 OLED 元 4記載之 接受性物 ,與專利 ,質 BBD 拌獲得紅 之清漆, 比結果可 性溶劑在 使用甲苯 輸送性清 •57-[4] Luminance meter: LS-1 10 (manufactured by Minolta Co., Ltd.) [Table 4] Film thickness Current density Voltage Luminance Current efficiency Luminescence start maximum brightness (nm) (mA/cm2) (V) (cd/m2) (cd/ A) Voltage (V) (cd/m2) Example 9 22 10.1 7.0 317 3.13 2.75 29830 Example 10 36 0.21 7.0 7.0 3.41 4.00 4167 10 10.5 285 2.85 Comparative Example 9 — 0.37 7.0 1.2 0.32 4.50 10640 10 9.2 330 3.3 4.50 10640 Comparative Example 10 24 0.419 7.0 8.89 2.12 4.00 5540 Comparative Example π 12 10 10.2 239 2.39 6.50 4410 Comparative Example 12 21 2.86 7.0 101 3.5 2.75 18799 10 8.1 410 4.1 2.75 18799 As shown in Table 4, obtained from Example 6 The OLED element of the hole transporting film produced by the varnish (Example 9) has the same reduction rate and maximum brightness as the OLED element without the hole-56-200800870 (54) transport film. The above is self-evident. Further, in the OLED device of Example 9, the sulfonate compound which is not a predetermined dopant as compared with the comparative example using 5-SSA, the driving voltage is lowered to increase the maximum luminance to be self-evident. The uniformity of the light-emitting surface of the OLED element produced in Example 9 was unrecognizable. φ The OLED element of Example 10, in conjunction with the embodiment 9, showed good current efficiency as self-evident. That is, the sulfonate compound of the example can be effectively used as a hole in the hole injection layer after film formation. [Example 11] The sulfonate compound (29) obtained in Example 3 (24.5 mg) The mixture of the charge transporting main substance synthesized by the method described in the literature 4, 19. mg, was added with 3.24 ml of toluene, and the mixture was stirred at room temperature. Varnish (solid content concentration: 1.5% by mass). The obtained solid matter was not observed even when it was cooled to -25 °C. by! It is known that the sulfonate compound is used for the charge transporting host material having a low polarity and a high solubility as BBD, and even if it is only a low-polar solvent, the charge paint can be prepared without self-precipitating. . , the current effect of the present invention, in addition to the fact that the black OLED element 4 recorded the acceptability, and the patent, quality BBD mixed to obtain a red varnish, compared to the results of the solvent in the use of toluene transportability clear.
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| TWI795361B (en) * | 2016-06-16 | 2023-03-11 | 日商日產化學工業股份有限公司 | Sulfonate Compounds and Their Utilization |
| TWI801471B (en) * | 2017-12-20 | 2023-05-11 | 日商日產化學股份有限公司 | Sulfonate Compounds and Their Utilization |
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| KR100949378B1 (en) | 2007-12-31 | 2010-03-25 | 제일모직주식회사 | Compound for organic photoelectric device and organic photoelectric device comprising same |
| AU2011315854B2 (en) * | 2010-10-15 | 2015-04-09 | Evoqua Water Technologies Llc | Process for making a monomer solution for making cation exchange membranes |
| KR102252172B1 (en) * | 2012-03-02 | 2021-05-17 | 닛산 가가쿠 가부시키가이샤 | Charge-transporting varnish |
| JP6015073B2 (en) | 2012-04-02 | 2016-10-26 | セイコーエプソン株式会社 | Functional layer forming ink and light emitting device manufacturing method |
| US9541834B2 (en) * | 2012-11-30 | 2017-01-10 | Rohm And Haas Electronic Materials Llc | Ionic thermal acid generators for low temperature applications |
| JP5790901B1 (en) | 2013-10-04 | 2015-10-07 | 日産化学工業株式会社 | Aniline derivatives and uses thereof |
| KR102257239B1 (en) | 2013-10-09 | 2021-05-27 | 닛산 가가쿠 가부시키가이샤 | Arylsulfonic acid compound, use thereof, and method for producing arylsulfonic acid compound |
| EP3425689B1 (en) | 2016-03-03 | 2019-10-23 | Nissan Chemical Corporation | Charge-transporting varnish |
| EP3434666A4 (en) | 2016-03-24 | 2019-11-27 | Nissan Chemical Corporation | ARYLAMINE DERIVATIVE AND USE THEREOF |
| WO2017217457A1 (en) * | 2016-06-16 | 2017-12-21 | 日産化学工業株式会社 | Sulfonic acid ester compound and use therefor |
| EP3582279A4 (en) | 2017-02-07 | 2020-12-30 | Nissan Chemical Corporation | Charge transporting varnish |
| CN110476265A (en) | 2017-04-05 | 2019-11-19 | 日产化学株式会社 | charge transport varnish |
| EP3731291A4 (en) * | 2017-12-20 | 2021-09-29 | Nissan Chemical Corporation | CARGO-TRANSPORTING PAINT AND CARGO-TRANSPORTING THIN-FILM |
| EP3731290A4 (en) * | 2017-12-20 | 2021-09-29 | Nissan Chemical Corporation | CARGO TRANSPORT PAINT |
| WO2020218316A1 (en) | 2019-04-26 | 2020-10-29 | 日産化学株式会社 | Method for producing arylsulfonic acid ester compound |
| CN112778838A (en) * | 2020-12-07 | 2021-05-11 | 广东绿展科技有限公司 | Inorganic nano material printing ink and preparation method thereof |
| JP7171115B1 (en) * | 2021-03-09 | 2022-11-15 | 学校法人中部大学 | Silane-containing condensed ring dipeptide compound, method for producing same, and method for producing polypeptide compound using same |
| JP7365444B2 (en) | 2022-03-09 | 2023-10-19 | 東ソー・ファインケム株式会社 | High-purity 4-(2-bromoethyl)benzenesulfonic acid, high-purity styrenesulfonic acids derived therefrom, polymers thereof, and methods for producing them |
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| JP2000310852A (en) * | 1999-04-28 | 2000-11-07 | Fuji Photo Film Co Ltd | Positive planographic printing material |
| US6824946B2 (en) * | 2000-10-03 | 2004-11-30 | Fuji Photo Film Co., Ltd. | Lithographic printing plate precursor |
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| TWI801471B (en) * | 2017-12-20 | 2023-05-11 | 日商日產化學股份有限公司 | Sulfonate Compounds and Their Utilization |
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