200809902 \ (1) 九、發明說明 【發明所屬之技術領域】 本發明是有關離子源裝置的電漿均一化方法及離子源 裝置。 【先前技術】 一般，在FPD ( Flat Panel Display )用的帶狀射束（ ribbon beam)型的摻雜裝置中，是將氫稀釋後的B2H6、 PH3等導入離子源裝置而離子化，作爲帶狀射束來從射束 引出系引出。此情況，並非只有含硼B、磷P的雜質離子 (PHX+、P2Hx+、或、BHX+、B2Hx+)，連 Hx +離子也同時 被引出。 如此，在以往的摻雜裝置中，儘管離子源裝置所發生 的氫離子不要，但還是會含於帶狀射束而原封不動打入玻 璃基板（面板）。氫離子恐會有不必要地加熱玻璃基板， 或使產生製程上不良情況之虞。因此，以往的離子源裝置 是以儘可能壓低如此之氫離子的發生比例的動作條件來運 轉。但，動作條件之氫離子的低減頂多至70%程度。 相對的，專利文獻1 (特開2 0 0 5 - 5 1 9 7號公報）則是 在離子源裝置的電漿室中將使N極及S極相向的1組永久 磁石配置成夾著天線，藉此可低減電漿中的氫離子的生成 比例。然’上述1組的永久磁石會產生與離子源裝置的離 子束引出面平行且與射束剖面的長軸方向正交的磁場（ N —S )。所謂射束剖面的長軸方向是意指帶狀射束的剖面 -4- (2) 200809902 \ 形狀的長軸方向，一般意指水平方向。無論如何，上述磁 場是具有隨著接近離子束引出面而變弱的磁場梯度。此情 況，根據上述磁場及磁場梯度，電漿室内的離子會在射束 剖面的長軸方向的一方向接受飄移（drift )，電漿密度會 偏於射束剖面的長軸方向，因此從電漿引出的離子束之射 束剖面的長軸方向的均一性會惡化。 φ 【發明內容】 本發明的目的是在於提供一種可低減離子束（ion beam)中的氫離子（Hx+)，且可產生具有均一的電流分 布之雜質（dopant)比率高的離子束之電漿均一化方法。 本發明且以提供一種適於上述電漿均一化方法的離子 源裝置爲目的。 本發明更以提供一種具備上述離子源裝置的摻雜裝置 爲目的。 φ 根據本發明的第1態樣，可供給一種離子源裝置的電 漿均一化方法。本電漿均一化方法是適用於具有以下的構 成之離子源裝置。 亦即，離子源裝置係具有： 電漿室，其係具有離子束引出面； 供給部，其係對該電漿室内供給離子源氣體； 複數個天線，其係於上述電漿室内配列於與上述離子 束引出面平行的第1方向，用以藉由從高頻電源所供給的 電力在上述電漿室内產生高頻電場，使與上述離子源氣體 -5- 200809902 (3) 反應而產生電漿； 成對的天線對向磁石，其係以能夠夾著排列於上述第 1方向的該複數個天線之方式來對向配置，而形成穿過該 複數個天線的磁場，藉此形成高濃度的電子發生領域，輔 助電漿生成；及 位置調節手段，其係針對上述複數個天線，使上述成 對的天線對向磁石移動於互相接近、離反的第2方向及接 φ 近、離反於上述離子束引出面的第3方向的至少一方。 離子源裝置更具有： 複數個永久磁石，其係配置於形成上述電漿室的壁， 而形成將產生於上述電漿室内的電漿關起的尖頭磁場（ Cusp );及 離子束引出系，其係設置於上述離子束引出面，由用 以從產生於上述電漿室内的電漿來引出離子束的複數個電 極所形成。 φ 在本發明的第1態樣之電漿均一化方法中，使上述天 線的迴路（loop )形狀在上述第1方向形成長的形狀，藉 此使在上述電漿室内的電漿密度於上述第1方向均一化。 本發明且提供一種離子源裝置。本發明之離子源裝置 的特徵，係於具有上述構成的離子源裝置中，使上述天線 的迴路形狀在上述第1方向成爲長的形狀。 在上述電漿均一化方法及離子源裝置中皆是最好上述 天線的迴路形狀爲具有短徑及長徑的賽道狀或長四角形狀 -6 - (4) (4)200809902 在上述電漿均一化方法及離子源裝置中皆是最好將上 述天線予以偶數個配列配置於上述第1方向，且使各天線 間的間隔形成比天線的徑、特別是短徑小。 在上述電漿均一化方法及離子源裝置中皆是最好上述 成對的天線對向磁石係有關上述第1方向具有相等長度的 同時，異磁極會形成對向，以在上述電漿室的上述第1方 向的中心附近磁極會反轉的方式來至少2組串聯配置該成 對的天線對向磁石於上述第1方向。 在上述電漿均一化方法及離子源裝置中皆是最好有關 串聯於上述第1方向的至少2組天線對向磁石的上述第1 方向之長度比有關上述離子束引出系的引出縫隙的上述第 1方向之長度大。 在上述電漿均一化方法及離子源裝置中皆是最好形成 上述尖頭磁場的複數個永久磁石係於形成上述電漿室的壁 中，除了接近上述離子束引出系的領域以外的壁取間隔配 置。 在上述電漿均一化方法及離子源裝置中皆是最好上述 位置調節手段可將上述天線對向磁石移動至上述天線的基 部附近。 在上述電漿均一化方法及離子源裝置中皆是最好上述 天線對向磁石係將對向於上述天線的對向軛與使一方的磁 極密著於該對向軛而重疊於上述第3方向的複數個永久磁 石配置於磁石外殼内來構成的同時，以上述對向軛的上述 第3方向的尺寸與上述重疊的複數個永久磁石的上述第3 (5) 200809902 % 方向的尺寸能夠形成相等之方式來構成。 在上述電漿均一化方法及離子源裝置中皆是最好上述 複數個永久磁石中，有關上述第3方向兩外側的永久磁石 要比内側的永久磁石在上述第2方向更長。 在上述電漿均一化方法及離子源裝置中皆是最好在上 述磁石外殼設置複數個水冷管，防止因來自電漿的熱而造 成上述天線對向磁石所發生的磁場低下。 φ 在上述電漿均一化方法及離子源裝置中皆是最好上述 複數個水冷管係由：設置於上述對向軛的兩側之2根的水 冷管、及設置於上述磁石外殼的背面中央部之1根的水冷 管所構成。 本發明且提供一種具備上述任一離子源裝置的摻雜裝 置。 若利用本發明，則可藉由天線的形狀及配置形態的改 良以及2組天線對向磁石的配置，來產生氫比率低、且於 φ 射束剖面的長軸方向以均一的密度來產生電漿，可產生在 射束剖面的長軸方向具有一樣的均一性之離子束。 【實施方式】 參照圖1A、圖1B來說明有關本發明之離子源裝置的 實施例。圖1 A是由橫方向來看離子源裝置的縱剖面圖， 圖1 B是擴大圖1 A的一部份（天線對向磁石）來顯示的剖 面圖。 在圖1A中，離子源裝置1具有箱狀的真空電漿室1〇 -8 - 200809902 (6) 。真空電漿室1 0的前面側、亦即圖中右側的面是形成離 子束引出面。在往後會詳細説明，基於方便起見，將平行 於離子束引出面，垂直於圖面的方向稱爲第1方向，將圖 面的上下方向稱爲第2方向，將圖面的左右方向稱爲第3 方向。 離子源裝置1是具備偶數個的天線裝置20。天線裝置 20是如往後詳細説明那樣，排列於第1方向而設置，但在 φ 圖1A中僅圖示1個。天線裝置20是具有：設置於真空電 漿室10的背面側之RF( Radio Frequency)激勵器21及 配置於真空電漿室10内之天線22。RF激勵器21爲了勵 起電漿，而對天線22供給高頻電力。在RF激勵器21中 組合有氣體導入部2 5，其係用以將對應於所應生成的離子 束的離子種之氣體導入真空電漿室10内。氣體導入部25 是在天線22桿的周圍具有氣體導入口 25a。 在真空電漿室1 〇内，以能夠夾著天線22的方式來對 φ 向配置有成對的天線對向磁石30A、30B。該等的天線對 向磁石30A、3 0B是在第1方向具有等長，可分別藉由驅 動機構（圖示省略）來移動於第2方向、亦即圖1A的上 下方向及第3方向、亦即圖1A的左右方向，詳細會在往 後説明。在天線對向磁石30A、3 0B與真空電漿室10的背 面側的内壁之間設有氣體擴散板40。氣體擴散板40是用 以使由複數個氣體導入口 25a導入的氣體均一地擴散於真 空電漿室10内。 在真空電漿室1 〇的前面側、亦即離子束引出面側具 -9- (7) 200809902 * 備有射束引出系50。射束引出系50除了具有後述的 電極以外，還具有門式開閉的遮擋板（shutter ) 5 1。 板5 1是使用於劑量（d 0 s e )的變更時。 離子源裝置1除了上述以外，例如具備用以進行 電漿室10的抽真空之真空排氣裝置（未圖示）。 參照圖2〜圖4A、圖4B來說明有關圖1A所示 子源裝置1的偶數個天線裝置20的配置形態、天線 % 磁石30A、30B的構造及配置形態、以及兩者的關係 2〜圖4A、圖4B爲了易於理解圖1A所示之離子源裝 的構造，而只抽出主要部的構成來顯示的模式圖。特 圖2是由上方向來看離子源裝置1的橫剖面圖，圖3 圖1 A同樣由橫方向來看離子源裝置1的縱剖面圖。 2、圖3中’分別以X、Y、Z來表示圖1A中所定義的 、第2、第3方向。圖4A、圖4B是由前面側來看離 裝置1的縱剖面圖。 • 在本實施例中，偶數個的天線、亦即4個的天線 〜22-4會被排列於與離子束引出面平行的第1方向X 別是使各天線以2迴轉的迴路形狀在第1方向X形成 道（race-track )狀，且縮小彼此的間隔。藉此，各 是第1方向具有長徑及第3方向Z具有短徑。最好天 隔是天線的迴路徑，特別是短徑（第3方向Z的外徑 2倍以下。如此的配置形態是爲了抑止天線間的電漿 一，天線的迴路形狀亦可爲第1方向X長的四角形狀 天線對向磁石，在此是由異磁極對向之成對的天 各種 遮擋 真空 之離 對向 。圖 置1 別是 是與 在圖 第1 子源 22-1 。特 長賽 天線 線間 )的 不均 〇 線對 -10- (8) (8)200809902 向磁石3 0A-1及30B-1與30A-2及30B-2的2組所構成。 該等的天線對向磁石是有關第1方向的長度相等，特別是 使N極朝向天線側的天線對向磁石3 0A-1與使S極朝向天 線側的天線對向磁石30A-2會在真空電漿室10的第1方 向的大致中心位置磁極反轉，且以能夠排列成一直線的方 式組合配置。同樣的，使S極朝向天線側的天線對向磁石 3 0B-1與使N極朝向天線側的天線對向磁石30B-2在真空 電漿室1 0的第1方向的大致中心位置磁極反轉，且以能 夠排列成一直線的方式組合配置。並且，天線22-1、22-2 會被夾在天線對向磁石30A-1與30B-1之間，天線22-3、 22-4會被夾在天線對向磁石30A-2與3 0B-2之間。亦即， 2組的天線對向磁石的磁極反轉部會位於對應於天線22-2 與22-3之間的位置。 天線對向磁石30A-1及30A-2可藉由未圖示的位置調 節機構（驅動機構）來一體移動於第2方向Y及第3方向 Z，天線對向磁石30B-1及30B-2亦同樣可一體移動於第 2方向Y及第3方向Z。但，第2方向Y的移動是如圖3 實線及一點鎖線所示，天線對向磁石30A-1、30A-2及天 線對向磁石30B-1、30B-2爲分別互相接近、離反之類的 移動。另一方面，第3方向Z的移動是如圖2實線及一點 鎖線所示，4個天線全部爲一體接近、離反於離子束引出 面之類的移動。另外，第3方向Z的移動，針對真空電漿 室1 0的背面側而言，是可移動至各天線的基部附近。 如此一來，2組的天線對向磁石30A_1及30B-1與 200809902 (9) 30A-2及30B-2是與設置於真空電漿室10的前面側的離 子束引出系（後述）之間的距離可調節，且與天線對向磁 石30A-1及30B-1的對向距離、及與天線對向磁石30A-2 及3 0B-2的對向距離可一體調節。如此的位置調節機構可 藉由周知的技術、例如專利文獻1所揭示的位置調節機構 來實現，所以在此省略其詳細説明。 回到圖1 B，針對天線對向磁石的1個來進行説明。 φ 圖1 B是擴大顯示圖1 A所示的天線對向磁石3 0B。以下是 以天線對向磁石3 0B爲圖2、圖3所示的天線對向磁石 3 OB-1者來進行説明。剩下的天線對向磁石亦具有同樣的 構造。在此，天線對向磁石30B-1是具有與天線22對向 的面，具有延伸於第1方向X的對向軛31B-1。天線對向 磁石30B-1並具有使一方的磁極（在此爲s極）密著於與 對向軛3 1 B-1的對向面呈相反側的面而重疊於第3方向Z 的複數個（在此爲3個）的永久磁石3 2 B -1、3 3 B -1、3 4 B -φ 卜及收容該等的外殻35B-1。對向軛31B-1的第3方向Z 的尺寸與重疊於第3方向Z的3個永久磁石32B-1、33B-1、34B-1的第3方向Z的尺寸相等。另一方面，永久磁 石32B-1、33B-1、34B-1是延伸於第1方向X，且有關第 1方向X是具有同長度，有關第2方向Y是尺寸相異。亦 即’内側的永久磁石33B-1的第2方向Y的尺寸會比外側 的永久磁石32B-1、34B-1的第2方向Y的尺寸小。如此 一來’可使作用於天線的磁場形成均一，而使電漿生成能 夠形成均一。 -12- 200809902 (10) 外殼35B-1爲金屬製，例如不鏽鋼或鋁製。在外殼 3 5 B -1的内部對向軛3〗b _ 1的兩側（第3方向Z的兩側） 、及與對向軛3 1 B-1相反側（背面側）的中央部份別合計 內藏3個冷卻水管36B-1。該等3個冷卻水管36B-1是在 於防止因來自電漿的熱而造成在天線對向磁石30B-1所產 生的磁場低下。各冷卻水管36B-1雖圖示省略，但實際是 經由被覆耐熱性材料具有可撓性的配管來連接至設置於真 φ 空電漿室1 〇外的冷卻水循環系。此配管亦可內藏於用以 保持天線對向磁石30B-1而使移動的手臂61 (參照圖2、 圖3 )。 回到圖2、圖3，在形成真空電漿室10的壁中，除了 離子束引出系側的壁以外的5個壁，除了接近離子束引出 系的領域的部份以外，取一定間隔設有複數個永久磁石1 1 。該等的永久磁石1 1是用以形成尖頭磁場1 00來進行關 起電漿者。因此複數個永久磁石1 1是以使磁極能夠朝向 Φ 真空電漿室1 〇内，且相隣的永久磁石11的磁極相異之方 式來配置。在圖2、圖3中，雖是顯示使永久磁石11露出 於真空電漿室1 0内，但如圖1A所示，最好永久磁石1 1 是設置於真空電漿室1 0的外壁側所設的溝1 1 a，使不會露 出於真空電漿室10内。另外，在圖1A中僅顯示上述的溝 1 1 a，尖頭磁場形成用的永久磁石1 1則是省略圖示。並且 ，在圖2、圖3中接近離子束引出系50的領域，且未設置 永久磁石1 1的領域是被稱爲無尖頭磁場區域1 1 0。 其次，說明有關離子束引出系50。離子束引出系50 -13- 200809902 (11) 是從真空電漿室1 0側依序設有電漿電極5 1及引出電極 ，接著經由絕緣子5 3來設置抑制電極5 4、接地電極5 5 成。在各電極形成有規定所被引出的離子束的剖面形狀 縫隙。在本實施例中是引出剖面形狀爲橫長的帶形狀的 子束，因此形成於各電極的縫隙亦可由圖2、圖3明確 知，第1方向X的尺寸大，第2方向Υ的尺寸小。再 ’由圖2可明確得知，形成於各電極之縫隙的第1方向 __ 的尺寸比2組的天線對向磁石的第1方向X的尺寸小。 離子源裝置1是以離子束引出系50能夠連通至摻 裝置的處理反應室之方式來設置。 接著，說明有關離子源裝置1的作用。 從電漿氣體源200 (圖2)至真空狀態的真空電漿 10内經由氣體導入口 25a來導入Β2Η6、ΡΗ3等離子化用 氣體。在圖4Α中，以箭號來顯示從設置於氣體擴散板 的開口 40a至其周圍氣體擴散的狀態，在圖4Β中省略 φ 圖示。 從所對應的RF激勵器21-1、21-2、21 ·3、21-4來 別供給高頻電力至天線22-1、22-2、22-3、22-4。 如此一來，藉由供給至天線22_1〜22-4的高頻電力 在天線周圍形成感應電場。 被導入真空電漿室10内的氣體會藉由感應電場而 電離，在電槳生成領域120(圖2、圖3中以虛線所不 形成電漿。所被生成的電漿是在圖2、圖3中以一點鎖 所示的電漿領域1 3 0中，藉由利用複數個永久磁石1 1 5 2 而 之 離 得 著 X 雜 室 的 40 其 分 被 ) 線 所 -14- 200809902 (12) 產生的尖頭磁場100來關在真空電漿室10内。 對離子束引出系50的各電極賦予所定的電位’通 '過 縫隙來從電漿引出離子束。 在以上那樣的離子束生成過程中，例如在成對的天線 對向磁石30A-1與30B-1中相向的N極、S極會產生與離 子束引出面、亦即離子束引出系50的面平行且與第1方 向X正交的磁場（N — S )。若此磁場在中性氣體的離子化 所被進行的天線附近生成，則低能量電子會被在此磁場被 捕捉（trap )而形成高濃度的低能量電子發生領域。然後 ，離子化電位（potential )低的B2HX+、PHX +等的離子化 要比H2的離子化更被促進，藉此電漿中的Hx +離子的比 例會相對變低，氫比率低的離子束會被引出。 藉由低減離子束中的氫離子，使雜質部份（dopant fraction )提高，可使離子注入中的玻璃基板的温度下降 ，減少冷卻次數。藉此，注入時間會被縮短，提高生產能 力。 另一方面，天線對向磁石所產生的磁場強度會隨著遠 離磁石中心而降低。亦即，往遠離磁石中心的方向發生磁 場梯度。一旦此磁場梯度發生，則電漿會偏移至與磁場的 方向及梯度的方向正交的方向、亦即第1方向X。因此， 若假設N極' S極的天線對向磁石爲1組，則磁場（N — s )亦於第1方向一樣，因此從電漿引出的離子束之射束剖 面的長軸方向的均一性會惡化。 並且，爲了產生於天線附近及引出電極附近的護套電 15- 200809902 (13) 壓’電槳中的離子及電子會在射束剖面的長軸方向的一方 向、亦即第1方向X接受ΕχΒ飄移，電漿密度會偏於射 束剖面的長軸方向，從電漿引出的離子束之射束剖面的長 軸方向的均一性會惡化。所謂ΕχΒ飄移，並非電場Ε與 磁場Β爲0，而是在某角度交錯時、，荷電粒子會藉由從電 場Ε及磁場Β所接受的力量來移動至正交於該兩者的方向 之飄移。 相對的，就本實施例而言，是以磁極能夠反轉於真空 電漿室10的第1方向X的中心部附近（射束剖面的長軸 方向的中央）之方式來直列配置Ν極、S極的天線對向磁 石1組、及磁場形成逆向之S極、Ν極的天線對向磁石1 組。如此一來，磁場梯度所造成之電漿的飄移或Ε X Β飄移 會被抵消，在射束剖面的長軸方向中央，磁場會形成逆方 向’因此射束剖面的長軸方向的電漿密度的偏在會被解消 ’可在射束剖面的長軸方向引出均一的離子束。 爲了參考，圖5是顯示雜質部份分布（dopant fraction profile)的測定結果之一例，圖6是顯示射束分 布的測定結果之一例。在圖5、圖6中皆是橫軸表示第1 方向X、亦即射束剖面的長軸方向的距離，可理解雜質部 份、射束分布的射束均一性皆於射束剖面的長軸方向大致 一樣。 本實施例之離子源裝置的上述以外的主要效果如以下 所述。 以小間隔來配列偶數個天線的同時，使迴路形狀在天 •16· 200809902 (14) 線的配列方向（第1方向χ)形成長的形狀，藉此可使在 真空電漿室1 〇内有關第1方向X的電漿密度形成均一。 並且，將天線對向磁石至少設成2組，使天線對向磁 石的磁場方向反轉而排成直列，使有關天線對向磁石的第 1方向X的長度形成比離子束引出系5 0的縫隙長更大’ 藉此可減少真空電漿室10内有關第1方向X的電漿偏移 ，而使電漿密度均一化。而且，以重疊於第3方向z的複 Φ 數個永久磁石來構成各天線對向磁石，使有關該等永久磁 石的第2方向Y的尺寸形成内側比外側形成更小，而使作 用於天線的磁場形成均一，藉此可使電漿生成形成均一。 藉由使天線對向磁石能夠移動至天線的基部附近，可 將天線的基部配置成天線對向磁石的中心磁場通過。在天 線的基部間，由於RF ( Radio Frequency )的感應電壓差 大，因此電漿容易發生，電漿密度會變高，因此可強化該 部份的低能量電子的保持。 Φ 藉由在構成天線對向磁石的磁石外殼内設置複數個水 冷管，可防止因來自電漿的熱而造成在天線對向磁石所產 生的磁場低下。 如以上所述，若利用本發明的離子源裝置，則可藉由 天線的形狀及配置形態的改良以及2組天線對向磁石的配 置，來產生氫比率低、且於射束剖面的長軸方向具有均一 的密度之電漿，可引出在射束剖面的長軸方向具有一樣的 均一性之離子束。 另外，本發明的離子源裝置特別是適於摻雜裝置，但 •17- 200809902 (15) 並非限於上述實施例，例如亦可爲以下那樣的變更。 亦即’增加天線對向磁石的數量，而成爲〗對1對應 於天線的配置，且以施加於天線的磁場方向能夠在每條天 線形成交替逆向的方式來配置。 使2組的天線對向磁石只能夠移動於第2方向γ、第 3方向Ζ的一方。 φ 【圖式簡單說明】 圖1Α是由橫方向來看本發明的離子源裝置之縱剖面 圖，圖1Β是擴大顯示圖1Α的一部份（天線對向磁石）之 剖面圖。 圖2是爲了易於理解圖1Α所示之離子源裝置的構造 ’而只抽出主要部的構成之模式圖，由上方向來看離子源 裝置的橫剖面圖。 圖3是爲了易於理解圖丨a所示之離子源裝置的構造 # ’而只抽出主要部的構成之模式圖，與圖1A同樣由橫方 向來看離子源裝置的縱剖面圖。 圖4A、圖4B是爲了易於理解圖1 A所示之離子源裝 置的構造’而只抽出主要部的構成之模式圖，由前面側來 看離子源裝置的縱剖面圖。 圖5是表示對本發明的離子源裝置所生成的離子束之 雜質部份分布的測定結果之一例。 圖6是表示對本發明的離子源裝置所生成的離子束之 射束分布的測定結果之一例。 -18- (16) 200809902 * 【主要元件之符號說明】 1 :離子源裝置 1 0 :真空電漿室 η :永久磁石 n a :溝 20 :天線裝置200809902 (1) Description of the Invention [Technical Field] The present invention relates to a plasma homogenization method and an ion source device for an ion source device. [Prior Art] Generally, in a ribbon beam type doping device for FPD (Flat Panel Display), B2H6 and PH3 diluted with hydrogen are introduced into an ion source device to be ionized. The beam is directed from the beam take-off. In this case, it is not only the impurity ions (PHX+, P2Hx+, or BHX+, B2Hx+) containing boron B or phosphorus P, but also the Hx + ions are simultaneously extracted. As described above, in the conventional doping apparatus, although the hydrogen ions generated by the ion source device are not required, they are contained in the band beam and are driven into the glass substrate (panel) as they are. Hydrogen ions may unnecessarily heat the glass substrate, or cause defects in the process. Therefore, the conventional ion source device is operated under operating conditions that reduce the occurrence ratio of such hydrogen ions as much as possible. However, the hydrogen ions in the operating conditions have a low reduction of up to 70%. In the plasma chamber of the ion source device, a set of permanent magnets in which the N pole and the S pole face each other are disposed so as to sandwich the antenna. Thereby, the proportion of hydrogen ions generated in the plasma can be reduced. However, the permanent magnet of the above-described one group generates a magnetic field (N - S ) which is parallel to the ion beam extraction surface of the ion source device and orthogonal to the long axis direction of the beam profile. The long axis direction of the beam profile is the profile of the band beam -4- (2) 200809902 \ The long axis direction of the shape, generally means the horizontal direction. In any event, the magnetic field described above has a magnetic field gradient that becomes weaker as it approaches the ion beam exit face. In this case, according to the magnetic field and the magnetic field gradient, the ions in the plasma chamber are subjected to drift in a direction of the long axis direction of the beam profile, and the plasma density is biased to the long axis direction of the beam profile, so the electricity is electrified. The uniformity of the long-axis direction of the beam profile of the ion beam extracted by the slurry deteriorates. φ [Explanation] An object of the present invention is to provide a plasma which can reduce hydrogen ions (Hx+) in an ion beam and generate an ion beam having a high ratio of dopants having a uniform current distribution. The method of homogenization. The present invention is also directed to an ion source apparatus suitable for the above plasma homogenization method. The present invention has an object of providing a doping device including the above ion source device. φ According to the first aspect of the invention, a plasma homogenization method of an ion source device can be supplied. The plasma homogenization method is applicable to an ion source device having the following composition. That is, the ion source device has: a plasma chamber having an ion beam extraction surface; a supply portion for supplying an ion source gas to the plasma chamber; and a plurality of antennas arranged in the plasma chamber The first direction in which the ion beam extraction surface is parallel is used to generate a high-frequency electric field in the plasma chamber by electric power supplied from the high-frequency power source, and react with the ion source gas-5-200809902 (3) to generate electricity. a pair of antenna-opposing magnets arranged to face each other so as to be able to sandwich the plurality of antennas arranged in the first direction, thereby forming a magnetic field passing through the plurality of antennas, thereby forming a high concentration The field of electron generation, auxiliary plasma generation; and position adjustment means for the plurality of antennas to move the pair of antennas opposite to each other in a second direction and opposite to each other At least one of the third direction of the ion beam extraction surface. The ion source device further includes: a plurality of permanent magnets disposed on a wall forming the plasma chamber to form a pointed magnetic field (Cusp) for shutting off plasma generated in the plasma chamber; and an ion beam extracting system The ion beam extraction surface is formed by a plurality of electrodes for extracting an ion beam from a plasma generated in the plasma chamber. In the plasma homogenization method according to the first aspect of the present invention, the loop shape of the antenna is formed into a long shape in the first direction, whereby the plasma density in the plasma chamber is made to be The first direction is uniform. The invention also provides an ion source device. The ion source device of the present invention is characterized in that, in the ion source device having the above configuration, the loop shape of the antenna is made long in the first direction. In the above plasma homogenization method and ion source device, it is preferable that the loop shape of the antenna is a track shape or a long square shape having a short diameter and a long diameter -6 - (4) (4) 200809902 in the above plasma In the homogenization method and the ion source device, it is preferable that the antennas are arranged in an even number in the first direction, and the interval between the antennas is formed to be smaller than the diameter of the antenna, particularly the short diameter. In the above plasma homogenization method and ion source device, it is preferable that the pair of antenna facing magnets have the same length in the first direction, and the different magnetic poles are formed opposite to each other in the plasma chamber. The pair of antenna opposing magnets are arranged in series in the first direction in such a manner that the magnetic poles in the vicinity of the center in the first direction are reversed. Preferably, in the plasma homogenization method and the ion source device, the length of the at least two sets of antennas in the first direction in the first direction is higher than the length of the extraction gap of the ion beam extracting system. The length of the first direction is large. In the plasma homogenization method and the ion source device, a plurality of permanent magnets which preferably form the pointed magnetic field are formed in the wall forming the plasma chamber, except for the wall adjacent to the field of the ion beam extraction system. Interval configuration. Preferably, in the plasma homogenization method and the ion source device, the position adjustment means moves the antenna opposing magnet to the vicinity of the base of the antenna. In the plasma homogenization method and the ion source device, preferably, the antenna facing magnet is opposed to the opposite yoke of the antenna, and one of the magnetic poles is adhered to the opposite yoke and overlapped with the third The plurality of permanent magnets in the direction are disposed in the magnet casing, and the dimension in the third direction of the opposing yoke and the size of the third (5) 200809902% direction of the plurality of overlapping permanent magnets can be formed. Equivalent way to form. In the above-described plasma homogenization method and ion source device, it is preferable that the plurality of permanent magnets in the third direction are longer than the inner permanent magnet in the second direction. In the above plasma homogenization method and ion source apparatus, it is preferable to provide a plurality of water-cooling tubes in the above-mentioned magnet housing to prevent the magnetic field generated by the antenna opposing magnets from being lowered due to heat from the plasma. Preferably, in the plasma homogenization method and the ion source device, the plurality of water-cooled tubes are: two water-cooling tubes disposed on both sides of the opposing yoke, and a center of the back surface of the magnet housing One of the water-cooled tubes of the department. The present invention also provides a doping device having any of the above ion source devices. According to the present invention, the shape and arrangement of the antenna can be improved, and the arrangement of the two sets of antennas facing the magnet can generate a low hydrogen ratio and generate electricity at a uniform density in the long axis direction of the φ beam profile. The slurry produces an ion beam that has the same uniformity in the long axis direction of the beam profile. [Embodiment] An embodiment of an ion source apparatus according to the present invention will be described with reference to Figs. 1A and 1B. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a longitudinal sectional view of the ion source device as viewed in the lateral direction, and Fig. 1B is a cross-sectional view showing an enlarged portion (antenna facing magnet) of Fig. 1A. In Fig. 1A, the ion source device 1 has a box-shaped vacuum plasma chamber 1 〇 -8 - 200809902 (6). The front side of the vacuum plasma chamber 10, that is, the surface on the right side in the drawing, forms an ion beam take-up surface. As will be described in detail later, for convenience, the direction parallel to the ion beam extraction surface, perpendicular to the plane of the drawing is referred to as the first direction, and the vertical direction of the drawing surface is referred to as the second direction, and the left and right direction of the drawing surface It is called the 3rd direction. The ion source device 1 has an even number of antenna devices 20. The antenna device 20 is provided in the first direction as will be described later in detail, but only one is shown in Fig. 1A. The antenna device 20 has an RF (RF) exciter 21 provided on the back side of the vacuum plasma chamber 10, and an antenna 22 disposed in the vacuum plasma chamber 10. The RF exciter 21 supplies high frequency power to the antenna 22 in order to excite the plasma. A gas introduction portion 25 is incorporated in the RF exciter 21 for introducing a gas corresponding to the ion species of the ion beam to be generated into the vacuum plasma chamber 10. The gas introduction portion 25 has a gas introduction port 25a around the rod of the antenna 22. In the vacuum plasma chamber 1 成, pairs of antenna opposing magnets 30A and 30B are disposed in the φ direction so that the antenna 22 can be sandwiched. The antenna facing magnets 30A and 30B have the same length in the first direction, and can be moved in the second direction, that is, the vertical direction and the third direction in FIG. 1A by a drive mechanism (not shown). That is, the left and right direction of Fig. 1A will be described in detail later. A gas diffusion plate 40 is provided between the antenna opposing magnets 30A, 30B and the inner wall on the back side of the vacuum plasma chamber 10. The gas diffusion plate 40 is for uniformly diffusing the gas introduced from the plurality of gas introduction ports 25a into the vacuum plasma chamber 10. On the front side of the vacuum plasma chamber 1 、, that is, on the side of the ion beam extraction surface, -9-(7) 200809902 * A beam take-up system 50 is provided. The beam take-up system 50 has a shutter type opening and closing shutter 5 1 in addition to an electrode to be described later. Plate 5 1 is used when the dose (d 0 s e ) is changed. The ion source device 1 includes, for example, a vacuum exhausting device (not shown) for performing vacuuming of the plasma chamber 10, in addition to the above. The arrangement of the even number of antenna devices 20 of the sub-source device 1 shown in Fig. 1A, the structure and arrangement of the antenna % magnets 30A and 30B, and the relationship between the two will be described with reference to Figs. 2 to 4A and 4B. 4A and FIG. 4B are schematic diagrams showing only the configuration of the main portion for easy understanding of the structure of the ion source package shown in FIG. 1A. 2 is a cross-sectional view of the ion source device 1 as seen from the upper direction, and FIG. 3 and FIG. 1A are also longitudinal cross-sectional views of the ion source device 1 as seen from the lateral direction. 2. In Fig. 3, the second and third directions defined in Fig. 1A are indicated by X, Y, and Z, respectively. 4A and 4B are longitudinal cross-sectional views of the device 1 as seen from the front side. • In this embodiment, an even number of antennas, that is, four antennas 2 to 22-4 are arranged in the first direction X parallel to the ion beam extraction surface, and the antennas are in a loop shape of two rotations. The 1 direction X forms a race-track shape and narrows the interval between each other. Thereby, each has a long diameter in the first direction and a short diameter in the third direction Z. Preferably, the space is the return path of the antenna, especially the short diameter (the outer diameter of the third direction Z is twice or less. This arrangement is for suppressing the plasma between the antennas, and the circuit shape of the antenna may be the first direction. The X-long quadrilateral shaped antenna opposes the magnet, which is the opposite of the various obscuring vacuums in the paired days of the opposite magnetic poles. Figure 1 is the same as the first sub-source 22-1 in the figure. The uneven line pair between the antenna lines -10- (8) (8) 200809902 is composed of two groups of magnets 30A-1 and 30B-1 and 30A-2 and 30B-2. The antenna facing magnets have the same length in the first direction, and in particular, the antenna facing magnets facing the antenna side facing the magnet 30A-1 and the antenna facing the antenna side facing the magnet 30A-2 will be The magnetic poles of the vacuum plasma chamber 10 are reversed at substantially the center position in the first direction, and are arranged in a line so as to be aligned. Similarly, the antenna facing magnet pair S 0B-1 with the S pole facing the antenna and the antenna facing the antenna side facing the antenna side 30B-2 at the approximate center position of the first direction of the vacuum plasma chamber 10 Turn and combine the configurations in such a way that they can be arranged in a straight line. Also, the antennas 22-1, 22-2 are sandwiched between the antenna opposing magnets 30A-1 and 30B-1, and the antennas 22-3, 22-4 are sandwiched between the antenna opposing magnets 30A-2 and 30B. Between -2. That is, the magnetic pole inversion portions of the two sets of antenna facing magnets are located at positions corresponding to the positions between the antennas 22-2 and 22-3. The antenna facing magnets 30A-1 and 30A-2 can be integrally moved in the second direction Y and the third direction Z by a position adjusting mechanism (driving mechanism) (not shown), and the antenna opposing magnets 30B-1 and 30B-2 Similarly, the second direction Y and the third direction Z can be integrally moved. However, the movement of the second direction Y is as shown by the solid line and the one-point lock line in FIG. 3, and the antenna opposing magnets 30A-1 and 30A-2 and the antenna opposing magnets 30B-1 and 30B-2 are respectively close to each other, and vice versa. The movement of the class. On the other hand, the movement in the third direction Z is as shown by the solid line and the one-point lock line in Fig. 2, and all of the four antennas are in close proximity to each other and move away from the ion beam take-up surface. Further, the movement in the third direction Z is movable to the vicinity of the base of each antenna for the back side of the vacuum plasma chamber 10. As a result, the two sets of antenna facing magnets 30A_1 and 30B-1 and 200809902 (9) 30A-2 and 30B-2 are between the ion beam extracting system (described later) provided on the front side of the vacuum plasma chamber 10. The distance can be adjusted, and the opposing distances from the antenna opposing magnets 30A-1 and 30B-1 and the opposing distances from the antenna opposing magnets 30A-2 and 30B-2 can be adjusted integrally. Such a position adjustment mechanism can be realized by a known technique, for example, a position adjustment mechanism disclosed in Patent Document 1, and thus detailed description thereof will be omitted. Returning to Fig. 1B, one of the antenna opposing magnets will be described. φ Fig. 1B is an enlarged view showing the antenna opposing magnet 30B shown in Fig. 1A. Hereinafter, the antenna facing magnet 30B will be described as the antenna facing magnet 3 OB-1 shown in Figs. 2 and 3 . The remaining antennas have the same configuration for the opposing magnets. Here, the antenna facing magnet 30B-1 has a surface facing the antenna 22, and has a facing yoke 31B-1 extending in the first direction X. The antenna facing magnet 30B-1 has a magnetic pole (here, an s pole) which is adhered to a surface opposite to the opposing surface of the opposing yoke 3 1 B-1 and overlaps the third direction Z. The permanent magnets (here, three) are 3 2 B -1, 3 3 B -1, 3 4 B - φ and the outer casing 35B-1. The dimension of the yoke 31B-1 in the third direction Z is equal to the dimension of the third permanent magnets 32B-1, 33B-1, and 34B-1 superimposed on the third direction Z in the third direction Z. On the other hand, the permanent magnets 32B-1, 33B-1, and 34B-1 extend in the first direction X, and the first direction X has the same length, and the second direction Y is different in size. That is, the size of the inner permanent magnet 33B-1 in the second direction Y is smaller than the size of the outer permanent magnets 32B-1 and 34B-1 in the second direction Y. In this way, the magnetic field acting on the antenna can be made uniform, and the plasma generation can be made uniform. -12- 200809902 (10) The outer casing 35B-1 is made of metal, such as stainless steel or aluminum. In the inner portion of the outer casing 3 5 B -1 opposite sides of the yoke 3 yb _ 1 (both sides in the third direction Z) and the central portion opposite to the opposite yoke 3 1 B-1 (back side) Do not put together three cooling water pipes 36B-1. The three cooling water pipes 36B-1 are designed to prevent the magnetic field generated by the antenna opposing magnet 30B-1 from being lowered due to heat from the plasma. Although each cooling water pipe 36B-1 is omitted, it is actually connected to a cooling water circulation system provided outside the true φ empty plasma chamber 1 via a flexible pipe covered with a heat resistant material. This pipe may also be housed in an arm 61 (see Figs. 2 and 3) for holding the antenna against the magnet 30B-1. Referring back to Fig. 2 and Fig. 3, in the wall forming the vacuum plasma chamber 10, five walls other than the wall on the side of the ion beam extracting system are arranged at intervals except for the portion close to the field of the ion beam extracting system. There are a plurality of permanent magnets 1 1 . The permanent magnets 1 1 are used to form a pointed magnetic field 100 to turn off the plasma. Therefore, the plurality of permanent magnets 1 1 are arranged such that the magnetic poles can face the inside of the Φ vacuum plasma chamber 1 and the magnetic poles of the adjacent permanent magnets 11 are different. In Figs. 2 and 3, although the permanent magnet 11 is exposed in the vacuum plasma chamber 10, as shown in Fig. 1A, it is preferable that the permanent magnet 11 is disposed on the outer wall side of the vacuum plasma chamber 10. The groove 1 1 a is provided so as not to be exposed in the vacuum plasma chamber 10. Further, in Fig. 1A, only the above-described groove 1 1 a is shown, and the permanent magnet 1 1 for forming a pointed magnetic field is omitted. Further, in the field of the ion beam take-up system 50 in Figs. 2 and 3, and the field in which the permanent magnet 11 is not provided is referred to as a non-tip magnetic field region 1 1 0. Next, the ion beam take-up line 50 will be described. The ion beam extracting system 50 - 13 - 200809902 (11) is provided with a plasma electrode 5 1 and an extraction electrode sequentially from the vacuum plasma chamber 10 side, and then the suppression electrode 5 4 and the ground electrode 5 5 are provided via the insulator 53. to make. A cross-sectional shape slit defining an ion beam to be extracted is formed in each electrode. In the present embodiment, the shape of the sub-beam having a cross-sectional shape of a horizontally long stripe is drawn. Therefore, the slit formed in each electrode can be clearly known from FIG. 2 and FIG. 3, and the size in the first direction X is large, and the dimension in the second direction is large. small. Further, as is clear from Fig. 2, the size of the first direction __ formed in the slit of each electrode is smaller than the size of the antenna pair of the two groups in the first direction X of the magnet. The ion source device 1 is provided in such a manner that the ion beam extracting system 50 can communicate with the processing reaction chamber of the doping device. Next, the action of the ion source device 1 will be described. From the plasma gas source 200 (Fig. 2) to the vacuum plasma 10 in a vacuum state, the 等2Η6, ΡΗ3 plasma gas is introduced through the gas introduction port 25a. In Fig. 4A, the state in which the gas is diffused from the opening 40a provided in the gas diffusion plate to the periphery thereof is indicated by an arrow, and the φ diagram is omitted in Fig. 4A. The high frequency power is supplied from the corresponding RF exciters 21-1, 21-2, 21·3, 21-4 to the antennas 22-1, 22-2, 22-3, 22-4. As a result, an induced electric field is formed around the antenna by the high frequency power supplied to the antennas 22_1 to 22-4. The gas introduced into the vacuum plasma chamber 10 is ionized by the induced electric field, and the electric paddle generation field 120 (the plasma is not formed by the broken line in Figs. 2 and 3). The generated plasma is shown in Fig. 2. In Fig. 3, in the plasma field 130 shown by a one-point lock, by using a plurality of permanent magnets 1 1 5 2 and leaving the X-compartment 40, the sub-point is -14-200809902 (12 The resulting pointed magnetic field 100 is enclosed within the vacuum plasma chamber 10. A predetermined potential 'pass' is applied to each electrode of the ion beam extracting system 50 to extract an ion beam from the plasma. In the ion beam generation process as described above, for example, in the pair of antenna facing magnets 30A-1 and 30B-1, the N pole and the S pole are opposite to each other, and the ion beam take-up surface, that is, the ion beam take-up surface 50 is generated. A magnetic field (N - S ) parallel to the plane and orthogonal to the first direction X. If the magnetic field is generated near the antenna where the ionization of the neutral gas is performed, the low-energy electrons are trapped in the magnetic field to form a high-concentration low-energy electron generation field. Then, the ionization of B2HX+, PHX+, etc. with a low ionization potential is promoted more than the ionization of H2, whereby the ratio of Hx+ ions in the plasma is relatively low, and the ion beam having a low hydrogen ratio is low. Will be led out. By reducing the impurity fraction by hydrogen ions in the low-ion beam, the temperature of the glass substrate during ion implantation can be lowered, and the number of cooling times can be reduced. As a result, the injection time is shortened and the production capacity is improved. On the other hand, the strength of the magnetic field generated by the antenna against the magnet decreases as it moves away from the center of the magnet. That is, a magnetic field gradient occurs in a direction away from the center of the magnet. Once this magnetic field gradient occurs, the plasma is shifted to a direction orthogonal to the direction of the magnetic field and the direction of the gradient, i.e., the first direction X. Therefore, if the antenna of the N-pole 'S-pole is assumed to be one set, the magnetic field (N_s) is also the same in the first direction, so the uniformity of the beam profile of the ion beam extracted from the plasma is uniform in the long-axis direction. Sex will worsen. In addition, the sheath is generated in the vicinity of the antenna and in the vicinity of the extraction electrode. 15-200809902 (13) The ions and electrons in the 'electrode' are received in the direction of the long axis of the beam profile, that is, the first direction X. When the ΕχΒ drifts, the plasma density will be biased toward the long axis direction of the beam profile, and the uniformity of the beam axis profile of the ion beam extracted from the plasma will deteriorate. The so-called ΕχΒ drift is not the electric field Ε and the magnetic field Β 0, but when the angle is staggered, the charged particles will move to the direction orthogonal to the two by the force received from the electric field Β and the magnetic field Β. . In the present embodiment, the poles are arranged in series so that the magnetic poles can be reversed in the vicinity of the center portion of the first direction X of the vacuum plasma chamber 10 (the center in the long axis direction of the beam section). The S-pole antenna is opposed to the magnet group 1 and the magnetic field forming the reverse S-pole and the drain-pole antenna facing the magnet group 1. As a result, the drift of the plasma caused by the magnetic field gradient or the drift of the Ε X 会 will be offset. In the center of the long axis direction of the beam profile, the magnetic field will form a reverse direction 'and thus the plasma density in the long axis direction of the beam profile. The bias will be canceled 'to extract a uniform ion beam in the long axis direction of the beam profile. For reference, Fig. 5 shows an example of measurement results of a dopant fraction profile, and Fig. 6 shows an example of measurement results of beam distribution. In both Fig. 5 and Fig. 6, the horizontal axis represents the distance in the longitudinal direction of the first direction X, that is, the beam profile. It is understood that the beam uniformity of the impurity portion and the beam distribution is the length of the beam profile. The axis direction is roughly the same. The main effects of the ion source device of the present embodiment other than the above are as follows. When an even number of antennas are arranged at a small interval, the shape of the circuit is formed into a long shape in the direction of the line (the first direction χ) of the line of the sky·16·200809902 (14), thereby making it possible to be in the vacuum plasma chamber 1 The plasma density in the first direction X is uniform. Further, the antenna opposing magnets are provided in at least two groups, and the antennas are aligned in the direction of the magnetic field of the magnets, and the length of the antenna facing the magnet in the first direction X is formed to be larger than that of the ion beam extracting system 50. The slit length is larger', whereby the plasma shift in the first direction X in the vacuum plasma chamber 10 can be reduced, and the plasma density is uniformized. Further, each of the antenna opposing magnets is formed by a plurality of permanent magnets of a plurality of Φ superimposed in the third direction z, so that the dimension of the second direction Y of the permanent magnets is formed smaller inside than the outer side, and acts on the antenna. The magnetic field is formed to be uniform, whereby plasma formation can be uniform. By moving the antenna facing magnet to the vicinity of the base of the antenna, the base of the antenna can be placed such that the center of the antenna opposes the magnetic field of the magnet. Between the bases of the antenna, since the induced voltage difference of RF (Radio Frequency) is large, plasma is likely to occur and the plasma density is increased, so that the holding of low-energy electrons in this portion can be enhanced. Φ By providing a plurality of water-cooling tubes in the magnet casing constituting the antenna opposing magnet, it is possible to prevent the magnetic field generated by the opposing magnets from being lowered due to heat from the plasma. As described above, according to the ion source device of the present invention, the shape and arrangement of the antenna can be improved, and the arrangement of the two sets of antennas facing the magnet can generate a low hydrogen ratio and a long axis of the beam profile. A plasma having a uniform density in the direction leads to an ion beam having the same uniformity in the long axis direction of the beam profile. Further, the ion source device of the present invention is particularly suitable for a doping device, but 17-200809902 (15) is not limited to the above embodiment, and may be modified as follows, for example. That is, the number of antenna opposing magnets is increased, and the pair 1 is arranged corresponding to the antenna, and the magnetic field direction applied to the antenna can be alternately reversed in each of the antennas. The two pairs of antenna facing magnets can be moved only in one of the second direction γ and the third direction Ζ. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a longitudinal sectional view of the ion source apparatus of the present invention as seen from the lateral direction, and Fig. 1A is a cross-sectional view showing an enlarged portion (antenna facing magnet) of Fig. 1 . Fig. 2 is a schematic view showing a configuration in which only the main portion is extracted for easy understanding of the structure of the ion source device shown in Fig. 1A, and a cross-sectional view of the ion source device as seen from the upper direction. Fig. 3 is a schematic view showing a configuration in which only the main portion is extracted for easy understanding of the configuration # of the ion source device shown in Fig. a, and a longitudinal sectional view of the ion source device is seen in the lateral direction as in Fig. 1A. 4A and 4B are schematic views showing a configuration in which only the main portion is extracted for easy understanding of the structure of the ion source device shown in Fig. 1A, and a longitudinal sectional view of the ion source device is viewed from the front side. Fig. 5 is a view showing an example of measurement results of impurity portion distribution of an ion beam generated by the ion source device of the present invention. Fig. 6 is a view showing an example of measurement results of a beam distribution of an ion beam generated by the ion source device of the present invention. -18- (16) 200809902 * [Symbol description of main components] 1 : Ion source device 1 0 : Vacuum plasma chamber η : Permanent magnet n a : Groove 20 : Antenna device
21 : RF激勵器 22 :天線 25 :氣體導入部 25a :氣體導入口 30A、3 0B :天線對向磁石 3 1 B -1 :對向軛 3 2 B -1、3 3 B -1、3 4 B -1 ··永久磁石 35B-1 :外殼 3 6B-1 :冷卻水管 40 :氣體擴散板 40a :開口 50·離子束引出系 51 :電漿電極 5 2 ·引出電極 5 3 :絕緣子 54 :抑制電極 5 5 :接地電極 -19- (17) 200809902 i 61 :手臂 1 〇 〇 :尖頭磁場 110:無尖頭磁場區域 1 3 0 :電漿領域 200 :電漿氣體源21 : RF exciter 22 : Antenna 25 : Gas introduction portion 25 a : Gas introduction port 30A, 3 0B : Antenna counter magnet 3 1 B -1 : Opposing yoke 3 2 B -1, 3 3 B -1, 3 4 B -1 · permanent magnet 35B-1 : outer casing 3 6B-1 : cooling water pipe 40 : gas diffusion plate 40a : opening 50 · ion beam extraction system 51 : plasma electrode 5 2 · extraction electrode 5 3 : insulator 54 : suppression Electrode 5 5 : Grounding electrode -19- (17) 200809902 i 61 : Arm 1 〇〇: pointed magnetic field 110: no pointed magnetic field 1 3 0 : plasma field 200 : plasma gas source