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TW200740218A - Driving device for charge coupled element and driving method for the same - Google Patents

Driving device for charge coupled element and driving method for the same

Info

Publication number
TW200740218A
TW200740218A TW095127261A TW95127261A TW200740218A TW 200740218 A TW200740218 A TW 200740218A TW 095127261 A TW095127261 A TW 095127261A TW 95127261 A TW95127261 A TW 95127261A TW 200740218 A TW200740218 A TW 200740218A
Authority
TW
Taiwan
Prior art keywords
charge coupled
coupled element
transmitting
driving device
charge
Prior art date
Application number
TW095127261A
Other languages
English (en)
Inventor
Akihiro Kuroda
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Publication of TW200740218A publication Critical patent/TW200740218A/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/153Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1536Frame transfer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454Output structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472Surface-channel CCD
    • H10D44/476Three-phase CCD

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW095127261A 2005-07-28 2006-07-26 Driving device for charge coupled element and driving method for the same TW200740218A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005219308A JP2007036860A (ja) 2005-07-28 2005-07-28 電荷結合素子の駆動装置及び電荷結合素子の駆動方法

Publications (1)

Publication Number Publication Date
TW200740218A true TW200740218A (en) 2007-10-16

Family

ID=37674734

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095127261A TW200740218A (en) 2005-07-28 2006-07-26 Driving device for charge coupled element and driving method for the same

Country Status (4)

Country Link
US (1) US20070023787A1 (zh)
JP (1) JP2007036860A (zh)
CN (1) CN1905615A (zh)
TW (1) TW200740218A (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106601767B (zh) * 2016-12-02 2019-06-04 中国电子科技集团公司第四十四研究所 能缩减电极信号延迟的正照帧转移ccd

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05130525A (ja) * 1991-11-07 1993-05-25 Fuji Film Micro Device Kk 固体撮像装置とその駆動方法
US5483090A (en) * 1993-04-09 1996-01-09 Sanyo Electric Co., Ltd. Solid-state image pickup device and method for manufacturing such device
US5867212A (en) * 1994-09-30 1999-02-02 Fuji Photo Film Co., Ltd. Solid-state image pickup device using charge coupled devices with vacant packet transfer
US6288744B1 (en) * 1994-11-11 2001-09-11 Sanyo Electric Co., Ltd. Solid-state image pickup device with a shared shift register and method of driving the same
JP3800673B2 (ja) * 1996-06-24 2006-07-26 ソニー株式会社 固体撮像装置およびその駆動方法
US6847401B1 (en) * 1997-08-25 2005-01-25 Sanyo Electric Co., Ltd. Solid-state image pickup device for producing thinned image
JP4305970B2 (ja) * 1998-06-05 2009-07-29 ソニー株式会社 固体撮像素子の駆動方法
JP4137442B2 (ja) * 2001-12-28 2008-08-20 富士フイルム株式会社 固体撮像装置とそのスミア電荷除去方法並びにデジタルスチルカメラ
KR100461010B1 (ko) * 2002-11-18 2004-12-09 삼성전자주식회사 고화질 ccd카메라 및 그 제어방법
JP2004193907A (ja) * 2002-12-10 2004-07-08 Matsushita Electric Ind Co Ltd X−yアドレス型固体撮像素子
JP2005101486A (ja) * 2003-08-28 2005-04-14 Sanyo Electric Co Ltd 固体撮像素子及びその制御方法
JP4680655B2 (ja) * 2005-04-01 2011-05-11 パナソニック株式会社 固体撮像装置及びその製造方法

Also Published As

Publication number Publication date
CN1905615A (zh) 2007-01-31
US20070023787A1 (en) 2007-02-01
JP2007036860A (ja) 2007-02-08

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