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TW200746228A - Method of improving the flatness of a microdisplay surface, liquid crystal on silicon display panel and method of manufacturing the same - Google Patents

Method of improving the flatness of a microdisplay surface, liquid crystal on silicon display panel and method of manufacturing the same

Info

Publication number
TW200746228A
TW200746228A TW095120578A TW95120578A TW200746228A TW 200746228 A TW200746228 A TW 200746228A TW 095120578 A TW095120578 A TW 095120578A TW 95120578 A TW95120578 A TW 95120578A TW 200746228 A TW200746228 A TW 200746228A
Authority
TW
Taiwan
Prior art keywords
layer
gaps
flatness
improving
liquid crystal
Prior art date
Application number
TW095120578A
Other languages
Chinese (zh)
Other versions
TWI319892B (en
Inventor
Yi-Tyng Wu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW95120578A priority Critical patent/TWI319892B/en
Publication of TW200746228A publication Critical patent/TW200746228A/en
Application granted granted Critical
Publication of TWI319892B publication Critical patent/TWI319892B/en

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  • Liquid Crystal (AREA)

Abstract

A method of improving the flatness of a microdisplay surface. A reflective mirror layer and a raised layer are formed in order on a semiconductor substrate. The raised layer may comprise a buffer layer and a stop layer, and pixel electrode areas are defined therefrom and gaps are consequently formed among the pixel electrode areas. A dielectric layer is deposited on the pixel electrode areas and fills the gaps. A dielectric layer is partially removed such that the portion on the raised layer is completely removed and the portion filling the gaps are partially removed thereby the remaining dielectric layer in the gaps has a height not lower than the top of the mirror layer. Thereafter, the raised layer is entirely or partially removed. A transparent conductive layer may be further combined onto the semiconductor substrate and a liquid crystal filling process is performed to form an LCoS display panel.
TW95120578A 2006-06-09 2006-06-09 Method of improving the flatness of a microdisplay surface, and method of manufacturing a liquid crystal on silicon display panel TWI319892B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95120578A TWI319892B (en) 2006-06-09 2006-06-09 Method of improving the flatness of a microdisplay surface, and method of manufacturing a liquid crystal on silicon display panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95120578A TWI319892B (en) 2006-06-09 2006-06-09 Method of improving the flatness of a microdisplay surface, and method of manufacturing a liquid crystal on silicon display panel

Publications (2)

Publication Number Publication Date
TW200746228A true TW200746228A (en) 2007-12-16
TWI319892B TWI319892B (en) 2010-01-21

Family

ID=45073678

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95120578A TWI319892B (en) 2006-06-09 2006-06-09 Method of improving the flatness of a microdisplay surface, and method of manufacturing a liquid crystal on silicon display panel

Country Status (1)

Country Link
TW (1) TWI319892B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112687709A (en) * 2019-10-17 2021-04-20 台湾积体电路制造股份有限公司 Optical collimator, semiconductor device and forming method thereof
TWI862671B (en) * 2019-08-30 2024-11-21 德商馬克專利公司 Lc medium

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI862671B (en) * 2019-08-30 2024-11-21 德商馬克專利公司 Lc medium
CN112687709A (en) * 2019-10-17 2021-04-20 台湾积体电路制造股份有限公司 Optical collimator, semiconductor device and forming method thereof
US12271006B2 (en) 2019-10-17 2025-04-08 Taiwan Semiconductor Manufacturing Co., Ltd. Multifunctional collimator for contact image sensors

Also Published As

Publication number Publication date
TWI319892B (en) 2010-01-21

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