TW200746228A - Method of improving the flatness of a microdisplay surface, liquid crystal on silicon display panel and method of manufacturing the same - Google Patents
Method of improving the flatness of a microdisplay surface, liquid crystal on silicon display panel and method of manufacturing the sameInfo
- Publication number
- TW200746228A TW200746228A TW095120578A TW95120578A TW200746228A TW 200746228 A TW200746228 A TW 200746228A TW 095120578 A TW095120578 A TW 095120578A TW 95120578 A TW95120578 A TW 95120578A TW 200746228 A TW200746228 A TW 200746228A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- gaps
- flatness
- improving
- liquid crystal
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005429 filling process Methods 0.000 abstract 1
Landscapes
- Liquid Crystal (AREA)
Abstract
A method of improving the flatness of a microdisplay surface. A reflective mirror layer and a raised layer are formed in order on a semiconductor substrate. The raised layer may comprise a buffer layer and a stop layer, and pixel electrode areas are defined therefrom and gaps are consequently formed among the pixel electrode areas. A dielectric layer is deposited on the pixel electrode areas and fills the gaps. A dielectric layer is partially removed such that the portion on the raised layer is completely removed and the portion filling the gaps are partially removed thereby the remaining dielectric layer in the gaps has a height not lower than the top of the mirror layer. Thereafter, the raised layer is entirely or partially removed. A transparent conductive layer may be further combined onto the semiconductor substrate and a liquid crystal filling process is performed to form an LCoS display panel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW95120578A TWI319892B (en) | 2006-06-09 | 2006-06-09 | Method of improving the flatness of a microdisplay surface, and method of manufacturing a liquid crystal on silicon display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW95120578A TWI319892B (en) | 2006-06-09 | 2006-06-09 | Method of improving the flatness of a microdisplay surface, and method of manufacturing a liquid crystal on silicon display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200746228A true TW200746228A (en) | 2007-12-16 |
| TWI319892B TWI319892B (en) | 2010-01-21 |
Family
ID=45073678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW95120578A TWI319892B (en) | 2006-06-09 | 2006-06-09 | Method of improving the flatness of a microdisplay surface, and method of manufacturing a liquid crystal on silicon display panel |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI319892B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112687709A (en) * | 2019-10-17 | 2021-04-20 | 台湾积体电路制造股份有限公司 | Optical collimator, semiconductor device and forming method thereof |
| TWI862671B (en) * | 2019-08-30 | 2024-11-21 | 德商馬克專利公司 | Lc medium |
-
2006
- 2006-06-09 TW TW95120578A patent/TWI319892B/en active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI862671B (en) * | 2019-08-30 | 2024-11-21 | 德商馬克專利公司 | Lc medium |
| CN112687709A (en) * | 2019-10-17 | 2021-04-20 | 台湾积体电路制造股份有限公司 | Optical collimator, semiconductor device and forming method thereof |
| US12271006B2 (en) | 2019-10-17 | 2025-04-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multifunctional collimator for contact image sensors |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI319892B (en) | 2010-01-21 |
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