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Priority claimed from US11/359,301external-prioritypatent/US7659206B2/en
Application filed by Applied Materials IncfiledCriticalApplied Materials Inc
Publication of TW200733227ApublicationCriticalpatent/TW200733227A/en
A method of treating a substrate comprises depositing silicon oxycarbide on the substrate and removing the silicon oxycarbide from the substrate. The silicon oxycarbide on the substrate is decarbonized by exposure to an energized oxygen-containing gas that heats the substrate and converts the layer of silicon oxycarbide into a layer of silicon oxide. The silicon oxide is removed by exposure to a plasma of fluorine-containing process gas. Alternatively, the remaining silicon oxide can be removed by a fluorine-containing acidic bath. In yet another version, a plasma of a fluorine-containing gas and an oxygen-containing gas is energized to remove the silicon oxycarbide from the substrate.
TW095127163A2006-02-212006-07-25Removal of silicon oxycarbide from substrates
TW200733227A
(en)
Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition