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TW200732832A - Mask blank and photomask - Google Patents

Mask blank and photomask

Info

Publication number
TW200732832A
TW200732832A TW096105693A TW96105693A TW200732832A TW 200732832 A TW200732832 A TW 200732832A TW 096105693 A TW096105693 A TW 096105693A TW 96105693 A TW96105693 A TW 96105693A TW 200732832 A TW200732832 A TW 200732832A
Authority
TW
Taiwan
Prior art keywords
mask blank
film
light
photomask
light transmission
Prior art date
Application number
TW096105693A
Other languages
Chinese (zh)
Other versions
TWI450028B (en
Inventor
Masaru Mitsui
Michiaki Sano
Masao Ushida
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200732832A publication Critical patent/TW200732832A/en
Application granted granted Critical
Publication of TWI450028B publication Critical patent/TWI450028B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

To provide a mask blank and a photomask suitable for processes (resist coating method, etching method, rinsing method, and so forth) in a large mask for an FPD device. This mask blank for manufacturing an FPD device has at least either of a light-shielding film and a semi-light transmission film with a function of adjusting the amount of transmission on a light transmission substrate. The mask blank is characterized in that the light-shielding film and the semi-light transmission film have a root means square roughness Rq of 2.0 nm or less of the surface of the film.
TW096105693A 2006-02-15 2007-02-15 Mask base and mask TWI450028B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006037461A JP2007219038A (en) 2006-02-15 2006-02-15 Mask blank and photomask

Publications (2)

Publication Number Publication Date
TW200732832A true TW200732832A (en) 2007-09-01
TWI450028B TWI450028B (en) 2014-08-21

Family

ID=38371568

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096105693A TWI450028B (en) 2006-02-15 2007-02-15 Mask base and mask

Country Status (5)

Country Link
JP (1) JP2007219038A (en)
KR (1) KR101024477B1 (en)
CN (1) CN101384957B (en)
TW (1) TWI450028B (en)
WO (1) WO2007094389A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI621907B (en) * 2014-07-17 2018-04-21 Ｈｏｙａ股份有限公司 Photomask, method of manufacturing a photomask, photomask blank and method of manufacturing a display device

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5407125B2 (en) * 2007-08-29 2014-02-05 大日本印刷株式会社 Gradation mask
JP2009086383A (en) * 2007-09-29 2009-04-23 Hoya Corp Gray tone mask, pattern transfer method and gray tone mask blank
JP4934237B2 (en) * 2007-09-29 2012-05-16 Ｈｏｙａ株式会社 Gray-tone mask manufacturing method, gray-tone mask, and pattern transfer method
JP4934236B2 (en) * 2007-09-29 2012-05-16 Ｈｏｙａ株式会社 Gray tone mask blank, gray tone mask manufacturing method, gray tone mask, and pattern transfer method
JP2012027176A (en) * 2010-07-22 2012-02-09 Tosoh Corp Substrate for photomask
CN104111581A (en) 2014-07-09 2014-10-22 京东方科技集团股份有限公司 Mask plate and manufacture method thereof, and manufacture method of film transistor
JP6335735B2 (en) * 2014-09-29 2018-05-30 Hoya株式会社 Photomask and display device manufacturing method
JP7130577B2 (en) * 2019-02-28 2022-09-05 Hoya株式会社 Photomask blank, method for manufacturing photomask blank, method for manufacturing photomask, and method for manufacturing display device
WO2022163434A1 (en) * 2021-01-26 2022-08-04 Hoya株式会社 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
KR102465982B1 (en) 2021-07-13 2022-11-09 에스케이씨솔믹스 주식회사 Blank mask and photomask using the same
KR102435818B1 (en) * 2021-09-03 2022-08-23 에스케이씨솔믹스 주식회사 Blank mask and photomask using the same
KR102660636B1 (en) * 2021-12-31 2024-04-25 에스케이엔펄스 주식회사 Blank mask and photomask using the same
KR102554083B1 (en) * 2022-06-23 2023-07-10 에스케이엔펄스 주식회사 Blank mask and photomask using the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4088742B2 (en) * 2000-12-26 2008-05-21 信越化学工業株式会社 Photomask blank, photomask, and method for manufacturing photomask blank
JP2003195483A (en) * 2001-12-28 2003-07-09 Hoya Corp Photomask blank, photomask and method for manufacturing the same
JP3956116B2 (en) * 2002-07-16 2007-08-08 信越化学工業株式会社 Photomask blank selection method
JP4481688B2 (en) * 2003-04-10 2010-06-16 Ｈｏｙａ株式会社 Substrate processing apparatus, coating apparatus, coating method, and photomask manufacturing method
JP2005317929A (en) * 2004-03-29 2005-11-10 Hoya Corp Method of peeling positive resist film, method of manufacturing exposure mask, and resist peeling device
WO2005124455A1 (en) * 2004-06-22 2005-12-29 Hoya Corporation Production method for mask blank-use translucent substrate, production method for mask blank, production method for exposing mask, production method for semiconductor device and production method for liquid crystal display unit, and method of correcting defect in exposing mask

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI621907B (en) * 2014-07-17 2018-04-21 Ｈｏｙａ股份有限公司 Photomask, method of manufacturing a photomask, photomask blank and method of manufacturing a display device
TWI651585B (en) * 2014-07-17 2019-02-21 日商Ｈｏｙａ股份有限公司 Photomask and method of manufacturing a display device
TWI690770B (en) * 2014-07-17 2020-04-11 日商Ｈｏｙａ股份有限公司 Photomask and method of manufacturing a display device

Also Published As

Publication number Publication date
WO2007094389A1 (en) 2007-08-23
CN101384957B (en) 2013-01-09
KR20080093443A (en) 2008-10-21
KR101024477B1 (en) 2011-03-23
JP2007219038A (en) 2007-08-30
TWI450028B (en) 2014-08-21
CN101384957A (en) 2009-03-11

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