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TW200732518A - Method of direct plating of copper on a substrate structure - Google Patents

Method of direct plating of copper on a substrate structure

Info

Publication number
TW200732518A
TW200732518A TW095138839A TW95138839A TW200732518A TW 200732518 A TW200732518 A TW 200732518A TW 095138839 A TW095138839 A TW 095138839A TW 95138839 A TW95138839 A TW 95138839A TW 200732518 A TW200732518 A TW 200732518A
Authority
TW
Taiwan
Prior art keywords
copper
substrate
substrate surface
barrier layer
seed layer
Prior art date
Application number
TW095138839A
Other languages
Chinese (zh)
Other versions
TWI376433B (en
Inventor
Aron Rosenfeld
Hooman Hafezi
Hua Chung
John Dukovic
Lei Zhu
Nicolay Kovarsky
Renren He
Zhi-Wen Sun
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/255,368 external-priority patent/US20070125657A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200732518A publication Critical patent/TW200732518A/en
Application granted granted Critical
Publication of TWI376433B publication Critical patent/TWI376433B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
    • H10P14/47—
    • H10W20/033—
    • H10W20/035—
    • H10W20/041—
    • H10W20/043—
    • H10W20/052—
    • H10W20/0523—
    • H10W20/056—
    • H10W20/425—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)

Abstract

The present invention teaches a method for depositing a copper seed layer onto a substrate surface, generally onto a barrier layer. The barrier layer may include a refractory metal and/or a group 8, 9 or 10 metal. The method includes cathodically pre-treating the substrate in an acid-containing solution. The substrate is then placed into a copper solution (pH ≥ 7.0) that includes complexed copper ions and a current or bias is applied across the substrate surface. The complexed copper ions are reduced to deposit a copper seed layer onto the barrier layer. In one aspect, a complex alkaline bath is then used to electrochemically plate a gapfill layer on the substrate surface, followed by overfill in the same bath. In another aspect, an acidic bath ECP gapfill process and overfill process follow the alkaline seed layer process.
TW095138839A 2005-10-21 2006-10-20 Method of direct plating of copper on a substrate structure TWI376433B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/255,368 US20070125657A1 (en) 2003-07-08 2005-10-21 Method of direct plating of copper on a substrate structure
US11/373,635 US20060283716A1 (en) 2003-07-08 2006-03-09 Method of direct plating of copper on a ruthenium alloy

Publications (2)

Publication Number Publication Date
TW200732518A true TW200732518A (en) 2007-09-01
TWI376433B TWI376433B (en) 2012-11-11

Family

ID=38541573

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095138839A TWI376433B (en) 2005-10-21 2006-10-20 Method of direct plating of copper on a substrate structure

Country Status (3)

Country Link
US (2) US20060283716A1 (en)
TW (1) TWI376433B (en)
WO (1) WO2007111676A2 (en)

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CN108149292A (en) * 2016-12-02 2018-06-12 臻鼎科技股份有限公司 Copper foil substrate and manufacturing method thereof
CN110233099A (en) * 2014-03-19 2019-09-13 应用材料公司 Electrochemistry electro-plating method
CN111261585A (en) * 2018-11-30 2020-06-09 台湾积体电路制造股份有限公司 Electrochemical plating system and process execution method, method for forming semiconductor structure
CN111936674A (en) * 2018-03-30 2020-11-13 朗姆研究公司 Copper electrodeposition sequence for cobalt lined features

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US11862546B2 (en) * 2019-11-27 2024-01-02 Applied Materials, Inc. Package core assembly and fabrication methods
US11257790B2 (en) 2020-03-10 2022-02-22 Applied Materials, Inc. High connectivity device stacking
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US11404318B2 (en) 2020-11-20 2022-08-02 Applied Materials, Inc. Methods of forming through-silicon vias in substrates for advanced packaging
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US20230070489A1 (en) * 2021-09-09 2023-03-09 Applied Materials, Inc. Doped tantalum-containing barrier films
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Publication number Priority date Publication date Assignee Title
TWI469219B (en) * 2009-02-16 2015-01-11 Nat Univ Tsing Hua A method for reducing a roughness of a surface of a metal thin film
CN110233099A (en) * 2014-03-19 2019-09-13 应用材料公司 Electrochemistry electro-plating method
CN108149292A (en) * 2016-12-02 2018-06-12 臻鼎科技股份有限公司 Copper foil substrate and manufacturing method thereof
CN111936674A (en) * 2018-03-30 2020-11-13 朗姆研究公司 Copper electrodeposition sequence for cobalt lined features
US11699590B2 (en) 2018-03-30 2023-07-11 Lam Research Corporation Copper electrodeposition sequence for the filling of cobalt lined features
CN111261585A (en) * 2018-11-30 2020-06-09 台湾积体电路制造股份有限公司 Electrochemical plating system and process execution method, method for forming semiconductor structure
US11015260B2 (en) 2018-11-30 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for controlling electrochemical deposition to avoid defects in interconnect structures
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CN111261585B (en) * 2018-11-30 2023-11-10 台湾积体电路制造股份有限公司 Electrochemical plating systems and process execution methods, methods of forming semiconductor structures

Also Published As

Publication number Publication date
WO2007111676A3 (en) 2007-12-27
US20110259750A1 (en) 2011-10-27
WO2007111676A2 (en) 2007-10-04
US20060283716A1 (en) 2006-12-21
TWI376433B (en) 2012-11-11

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