[go: up one dir, main page]

TW200731400A - Improved method for etching photolithographic substrates - Google Patents

Improved method for etching photolithographic substrates

Info

Publication number
TW200731400A
TW200731400A TW095145608A TW95145608A TW200731400A TW 200731400 A TW200731400 A TW 200731400A TW 095145608 A TW095145608 A TW 095145608A TW 95145608 A TW95145608 A TW 95145608A TW 200731400 A TW200731400 A TW 200731400A
Authority
TW
Taiwan
Prior art keywords
improved method
photolithographic substrate
vacuum chamber
photolithographic substrates
processing
Prior art date
Application number
TW095145608A
Other languages
Chinese (zh)
Other versions
TWI338921B (en
Inventor
Jason Plumhoff
Original Assignee
Oerlikon Usa Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Usa Inc filed Critical Oerlikon Usa Inc
Publication of TW200731400A publication Critical patent/TW200731400A/en
Application granted granted Critical
Publication of TWI338921B publication Critical patent/TWI338921B/en

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

The present invention provides a method for processing a photolithographic substrate within a vacuum chamber. The method comprising the steps of cooling the photolithographic substrate to a target temperature before the photolithographic substrate is processed within the vacuum chamber. At least one processing gas is introduced into the vacuum chamber. After the photolithographic substrate is at the target temperature, a plasma is ignited from the processing gas wherein the photolithographic substrate is processed using the plasma. Upon completion of the processing, the photolithographic substrate is unloaded from the vacuum chamber.
TW095145608A 2005-12-16 2006-12-07 Improved method for etching photolithographic substrates TWI338921B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75134905P 2005-12-16 2005-12-16

Publications (2)

Publication Number Publication Date
TW200731400A true TW200731400A (en) 2007-08-16
TWI338921B TWI338921B (en) 2011-03-11

Family

ID=40206424

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095145608A TWI338921B (en) 2005-12-16 2006-12-07 Improved method for etching photolithographic substrates

Country Status (2)

Country Link
CN (1) CN101331431B (en)
TW (1) TWI338921B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103698972A (en) * 2012-09-27 2014-04-02 中芯国际集成电路制造(上海)有限公司 Masking plate curing method and masking plate processing technology
US9852923B2 (en) * 2015-04-02 2017-12-26 Applied Materials, Inc. Mask etch for patterning

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6063710A (en) * 1996-02-26 2000-05-16 Sony Corporation Method and apparatus for dry etching with temperature control

Also Published As

Publication number Publication date
CN101331431B (en) 2014-02-05
TWI338921B (en) 2011-03-11
CN101331431A (en) 2008-12-24

Similar Documents

Publication Publication Date Title
TW200729339A (en) Selective etch of films with high dielectric constant with H2 addition
WO2009058235A3 (en) High lifetime consumable silicon nitride-silicon dioxide plasma processing components
WO2010105585A8 (en) Substrate processing system and substrate processing method
TW200644085A (en) A plasma enhanced atomic layer deposition system having reduced contamination
WO2004082820A3 (en) Processing system and method for chemically treating a substrate
WO2007109491A3 (en) Selective deposition
WO2011026127A3 (en) A local plasma confinement and pressure control arrangement and methods thereof
WO2004084280A3 (en) Processing system and method for treating a substrate
TW200737338A (en) Batch processing system and method for performing chemical oxide removal
WO2012030382A3 (en) Showerhead electrode
WO2009086013A3 (en) Method and apparatus for controlling temperature of a substrate
TW200644123A (en) Methods of removing resist from substrates in resist stripping chambers
TW200609986A (en) High rate etching using high pressure f2 plasma with argon dilution
WO2012087002A3 (en) Chemical vapor deposition apparatus and method for manufacturing light-emitting devices using same
WO2007111893A3 (en) Plasma etch and photoresist strip process with intervening chamber de-fluorination and wafer de-fluorination steps
TW201130042A (en) Substrate processing method and substrate processing apparatus
WO2010144761A3 (en) Ionized physical vapor deposition for microstructure controlled thin film deposition
WO2011037377A3 (en) Batch-type epitaxial layer forming device and a method for forming the same
WO2007124879A3 (en) Homogeneous pvd coating device and method
WO2004109773A3 (en) Method and system for heating a substrate using a plasma
MY139113A (en) Methods of etching photoresist on substrates
TW200625455A (en) Plasma sputtering film-forming method and equipment
WO2006104819A3 (en) A method and system for removing an oxide from a substrate
TW200739725A (en) Plasma nitriding method, method for manufacturing semiconductor device and plasma processing apparatus
TW200731400A (en) Improved method for etching photolithographic substrates