[go: up one dir, main page]

TW200739894A - Semiconductor image sensor and method for fabricating the same - Google Patents

Semiconductor image sensor and method for fabricating the same

Info

Publication number
TW200739894A
TW200739894A TW095112610A TW95112610A TW200739894A TW 200739894 A TW200739894 A TW 200739894A TW 095112610 A TW095112610 A TW 095112610A TW 95112610 A TW95112610 A TW 95112610A TW 200739894 A TW200739894 A TW 200739894A
Authority
TW
Taiwan
Prior art keywords
image sensor
fabricating
semiconductor image
same
photoactive region
Prior art date
Application number
TW095112610A
Other languages
Chinese (zh)
Inventor
Yan-Hsiu Liu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW095112610A priority Critical patent/TW200739894A/en
Publication of TW200739894A publication Critical patent/TW200739894A/en

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Dicing (AREA)

Abstract

A semiconductor image sensor and a method for fabricating the same are described. The semiconductor image sensor includes a substrate having at least a photoactive region therein and an IR-cutting layer over the photoactive region.
TW095112610A 2006-04-10 2006-04-10 Semiconductor image sensor and method for fabricating the same TW200739894A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095112610A TW200739894A (en) 2006-04-10 2006-04-10 Semiconductor image sensor and method for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095112610A TW200739894A (en) 2006-04-10 2006-04-10 Semiconductor image sensor and method for fabricating the same

Publications (1)

Publication Number Publication Date
TW200739894A true TW200739894A (en) 2007-10-16

Family

ID=57913894

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095112610A TW200739894A (en) 2006-04-10 2006-04-10 Semiconductor image sensor and method for fabricating the same

Country Status (1)

Country Link
TW (1) TW200739894A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8476729B2 (en) 2009-04-16 2013-07-02 Kabushiki Kaisha Toshiba Solid-state imaging device comprising through-electrode
TWI460848B (en) * 2008-01-31 2014-11-11 Omnivision Tech Inc Image sensing reflector
TWI499045B (en) * 2008-11-20 2015-09-01 Sony Corp Solid-state image capturing device and image capturing device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI460848B (en) * 2008-01-31 2014-11-11 Omnivision Tech Inc Image sensing reflector
TWI499045B (en) * 2008-11-20 2015-09-01 Sony Corp Solid-state image capturing device and image capturing device
US8476729B2 (en) 2009-04-16 2013-07-02 Kabushiki Kaisha Toshiba Solid-state imaging device comprising through-electrode

Similar Documents

Publication Publication Date Title
WO2008123270A1 (en) Semiconductor device, method for manufacturing semiconductor device, and display
TWI368996B (en) Method for manufacturing thin film transistor
TW200802889A (en) Semiconductor device and manufacturing method thereof
EP2557608A3 (en) Organic light-emitting device and method of manufacturing the same
EP2175492A4 (en) Semiconductor device and method for manufacturing the same
TWI371836B (en) Semiconductor device and method for fabricating the same
TWI351087B (en) Package substrate and method for fabricating the same
WO2008063337A3 (en) Semiconductor-on-diamond devices and associated methods
MY151538A (en) Light-emitting device with improved electrode structures
WO2010009716A3 (en) Radiation-emitting device and method for producing a radiation-emitting device
WO2007124209A3 (en) Stressor integration and method thereof
EP1972988B8 (en) Light-transmissive film, method for manufacturing the same, and display apparatus
TWI368320B (en) Solid state imaging device, manufacturing method of the same, and substrate for solid state imaging device
SG161183A1 (en) Integrated circuit system employing stress-engineered layers
SG126899A1 (en) Light-emitting device, method for making the same,and nitride semiconductor substrate
GB2434687B (en) Thin film transistor array substrate system and method for manufacturing
TWI318798B (en) Organic thin film transistor and method for manufacturing the same
TWI319893B (en) Nitride semiconductor substrate, method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate
GB2443577B (en) Method for manufacturing thin film transistor
EP2224472B8 (en) Substrate and method for manufacturing the same
GB2439599B (en) Thin film transistor array substrate and method fabricating the same
GB2441701B (en) Method for forming organic semiconductor film, organic semiconductor film, and organic thin film transistor
TW200744202A (en) Image sensor and methods of fabricating the same
SG166053A1 (en) Integrated circuit packaging system and method of manufacture thereof
TW200740277A (en) An active illumination apparatus and fabrication method thereof