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TW200739819A - Semiconductor device, and method for manufacturing the same - Google Patents

Semiconductor device, and method for manufacturing the same

Info

Publication number
TW200739819A
TW200739819A TW095144231A TW95144231A TW200739819A TW 200739819 A TW200739819 A TW 200739819A TW 095144231 A TW095144231 A TW 095144231A TW 95144231 A TW95144231 A TW 95144231A TW 200739819 A TW200739819 A TW 200739819A
Authority
TW
Taiwan
Prior art keywords
type semiconductor
semiconductor device
gate electrode
semiconductor layer
gate
Prior art date
Application number
TW095144231A
Other languages
English (en)
Other versions
TWI321832B (en
Inventor
Yoshinori Tsuchiya
Masato Koyama
Masahiko Yoshiki
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200739819A publication Critical patent/TW200739819A/zh
Application granted granted Critical
Publication of TWI321832B publication Critical patent/TWI321832B/zh

Links

Classifications

    • H10P10/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/668—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the layer being a silicide, e.g. TiSi2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0174—Manufacturing their gate conductors the gate conductors being silicided
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
TW095144231A 2006-03-08 2006-11-29 Semiconductor device, and method for manufacturing the same TWI321832B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006063290A JP2007242894A (ja) 2006-03-08 2006-03-08 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
TW200739819A true TW200739819A (en) 2007-10-16
TWI321832B TWI321832B (en) 2010-03-11

Family

ID=38478049

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095144231A TWI321832B (en) 2006-03-08 2006-11-29 Semiconductor device, and method for manufacturing the same

Country Status (5)

Country Link
US (2) US7416967B2 (zh)
JP (1) JP2007242894A (zh)
KR (1) KR100870593B1 (zh)
CN (1) CN100541818C (zh)
TW (1) TWI321832B (zh)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
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JP4920310B2 (ja) * 2006-05-30 2012-04-18 株式会社東芝 半導体装置およびその製造方法
US20080164529A1 (en) * 2007-01-08 2008-07-10 United Microelectronics Corp. Semiconductor device and manufacturing method thereof
JP4939960B2 (ja) 2007-02-05 2012-05-30 株式会社東芝 半導体装置およびその製造方法
US7416949B1 (en) * 2007-02-14 2008-08-26 Texas Instruments Incorporated Fabrication of transistors with a fully silicided gate electrode and channel strain
JP5086665B2 (ja) * 2007-03-02 2012-11-28 株式会社東芝 半導体装置およびその製造方法
US7585738B2 (en) * 2007-04-27 2009-09-08 Texas Instruments Incorporated Method of forming a fully silicided semiconductor device with independent gate and source/drain doping and related device
JP2009004444A (ja) * 2007-06-19 2009-01-08 Panasonic Corp 半導体装置及びその製造方法
JP5349903B2 (ja) 2008-02-28 2013-11-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US8617946B2 (en) 2009-11-11 2013-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits including metal gates and fabrication methods thereof
CN102315269B (zh) * 2010-07-01 2013-12-25 中国科学院微电子研究所 一种半导体器件及其形成方法
CN102543705B (zh) * 2011-07-12 2014-05-28 上海华力微电子有限公司 用于高、低压器件的多晶硅栅电极集成工艺
CN102543706B (zh) * 2011-07-22 2014-06-04 上海华力微电子有限公司 一种不同多晶硅栅电极厚度的集成工艺
KR101889469B1 (ko) * 2011-10-31 2018-08-21 에스케이하이닉스 주식회사 고유전층 및 금속게이트를 갖는 반도체장치, ｃｍｏｓ 회로 및 그 제조 방법
CN103515318B (zh) * 2012-06-20 2016-03-02 中芯国际集成电路制造(上海)有限公司 Cmos全硅化物金属栅制备方法
ITMI20130060A1 (it) * 2013-01-17 2014-07-18 St Microelectronics Srl Dispositivo a semiconduttore a struttura impilata.
JP2015144248A (ja) * 2013-12-25 2015-08-06 キヤノン株式会社 半導体装置、及びその製造方法
US9378968B2 (en) * 2014-09-02 2016-06-28 United Microelectronics Corporation Method for planarizing semiconductor device
US9570572B2 (en) * 2014-10-24 2017-02-14 Globalfoundries Inc. Multiple layer interface formation for semiconductor structure
CN105099374B (zh) * 2015-07-01 2017-12-05 东南大学 氮化镓基低漏电流悬臂梁开关差分放大器
CN105162420B (zh) * 2015-07-01 2017-11-28 东南大学 砷化镓基低漏电流双悬臂梁开关双栅倍频器
CN105024649B (zh) * 2015-07-01 2017-12-19 东南大学 硅基低漏电流悬臂梁栅金属氧化物场效应晶体管或非门
US20170148726A1 (en) * 2015-11-03 2017-05-25 Applied Materials, Inc. Semiconductor processing method and semiconductor device
KR102338487B1 (ko) * 2016-05-10 2021-12-10 에스케이하이닉스 주식회사 반도체 소자 및 이의 제조 방법
US10242988B2 (en) * 2017-08-23 2019-03-26 Nxp Usa, Inc. Antifuses integrated on semiconductor-on-insulator (SOI) substrates
CN109545749A (zh) * 2017-09-22 2019-03-29 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US11133226B2 (en) * 2018-10-22 2021-09-28 Taiwan Semiconductor Manufacturing Company, Ltd. FUSI gated device formation
CN113644112B (zh) * 2020-05-11 2022-07-15 北京华碳元芯电子科技有限责任公司 晶体管及制作方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3483484B2 (ja) * 1998-12-28 2004-01-06 富士通ディスプレイテクノロジーズ株式会社 半導体装置、画像表示装置、半導体装置の製造方法、及び画像表示装置の製造方法
US6391750B1 (en) * 1999-08-18 2002-05-21 Advanced Micro Devices, Inc. Method of selectively controlling contact resistance by controlling impurity concentration and silicide thickness
GB2390224B (en) * 2000-12-06 2004-12-08 Advanced Micro Devices Inc Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing
US6794234B2 (en) * 2002-01-30 2004-09-21 The Regents Of The University Of California Dual work function CMOS gate technology based on metal interdiffusion
KR100870176B1 (ko) * 2003-06-27 2008-11-25 삼성전자주식회사 니켈 합금 샐리사이드 공정, 이를 사용하여 반도체소자를제조하는 방법, 그에 의해 형성된 니켈 합금 실리사이드막및 이를 사용하여 제조된 반도체소자
JP4368180B2 (ja) 2003-10-21 2009-11-18 富士通マイクロエレクトロニクス株式会社 半導体装置およびその製造方法
JP3879003B2 (ja) * 2004-02-26 2007-02-07 国立大学法人名古屋大学 シリサイド膜の作製方法
KR100629267B1 (ko) * 2004-08-09 2006-09-29 삼성전자주식회사 듀얼-게이트 구조를 갖는 집적회로 소자 및 그 제조 방법
JP2006060046A (ja) * 2004-08-20 2006-03-02 Toshiba Corp 半導体装置
US7365410B2 (en) * 2004-10-29 2008-04-29 Freescale, Semiconductor, Inc. Semiconductor structure having a metallic buffer layer and method for forming
JP4181537B2 (ja) * 2004-11-12 2008-11-19 株式会社東芝 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US20070210351A1 (en) 2007-09-13
CN100541818C (zh) 2009-09-16
US7416967B2 (en) 2008-08-26
KR20070092175A (ko) 2007-09-12
TWI321832B (en) 2010-03-11
CN101034717A (zh) 2007-09-12
US20090032884A1 (en) 2009-02-05
JP2007242894A (ja) 2007-09-20
KR100870593B1 (ko) 2008-11-25

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