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GB2390224B - Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing - Google Patents

Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing

Info

Publication number
GB2390224B
GB2390224B GB0315661A GB0315661A GB2390224B GB 2390224 B GB2390224 B GB 2390224B GB 0315661 A GB0315661 A GB 0315661A GB 0315661 A GB0315661 A GB 0315661A GB 2390224 B GB2390224 B GB 2390224B
Authority
GB
United Kingdom
Prior art keywords
rapid thermal
step rapid
nickel silicide
thermal anneal
anneal process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0315661A
Other versions
GB0315661D0 (en
GB2390224A (en
Inventor
Eric N Paton
Ercan Adem
Jacques J Bertrand
Paul R Besser
Matthew S Buynoski
John Clayton Foster
Paul L King
George Jonathan Kluth
Minh Van Ngo
Christy Mei-Chu Woo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/729,699 external-priority patent/US6605513B2/en
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of GB0315661D0 publication Critical patent/GB0315661D0/en
Publication of GB2390224A publication Critical patent/GB2390224A/en
Application granted granted Critical
Publication of GB2390224B publication Critical patent/GB2390224B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H10D64/0112—
    • H10D64/01312—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates
GB0315661A 2000-12-06 2001-12-03 Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing Expired - Fee Related GB2390224B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US72969800A 2000-12-06 2000-12-06
US09/729,699 US6605513B2 (en) 2000-12-06 2000-12-06 Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing
PCT/US2001/045829 WO2002047145A1 (en) 2000-12-06 2001-12-03 Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing

Publications (3)

Publication Number Publication Date
GB0315661D0 GB0315661D0 (en) 2003-08-13
GB2390224A GB2390224A (en) 2003-12-31
GB2390224B true GB2390224B (en) 2004-12-08

Family

ID=27111928

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0315661A Expired - Fee Related GB2390224B (en) 2000-12-06 2001-12-03 Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing

Country Status (7)

Country Link
EP (1) EP1342260A1 (en)
JP (1) JP2004521486A (en)
CN (1) CN1633703A (en)
AU (1) AU2002230565A1 (en)
GB (1) GB2390224B (en)
TW (1) TW531792B (en)
WO (1) WO2002047145A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100870176B1 (en) * 2003-06-27 2008-11-25 삼성전자주식회사 Nickel alloy salicide process, method for manufacturing a semiconductor device using the same, nickel alloy silicide film formed thereby and a semiconductor device manufactured using the same
US7232756B2 (en) 2003-04-16 2007-06-19 Samsung Electronics Co., Ltd. Nickel salicide process with reduced dopant deactivation
CN100452357C (en) * 2004-06-23 2009-01-14 日本电气株式会社 Semiconductor device and manufacturing method thereof
US7385294B2 (en) 2005-09-08 2008-06-10 United Microelectronics Corp. Semiconductor device having nickel silicide and method of fabricating nickel silicide
CN1937181B (en) * 2005-09-19 2010-11-17 联华电子股份有限公司 Semiconductor element with nickel silicide and method for manufacturing nickel silicide
US7456095B2 (en) * 2005-10-03 2008-11-25 International Business Machines Corporation Method and apparatus for forming nickel silicide with low defect density in FET devices
US7622374B2 (en) 2005-12-29 2009-11-24 Infineon Technologies Ag Method of fabricating an integrated circuit
JP2007242894A (en) * 2006-03-08 2007-09-20 Toshiba Corp Semiconductor device and manufacturing method thereof
CN100442460C (en) * 2006-04-03 2008-12-10 中芯国际集成电路制造(上海)有限公司 Method for forming nickel silicide by plasma annealing
US7432255B2 (en) * 2006-05-16 2008-10-07 Hoffmann-La Roche Inc. 1H-indol-5-yl-piperazin-1-yl-methanone derivatives
JP5538975B2 (en) 2010-03-29 2014-07-02 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
CN102468150B (en) * 2010-11-19 2013-12-04 中芯国际集成电路制造(上海)有限公司 Method for forming semiconductor device
CN103165485B (en) * 2011-12-08 2015-11-25 中芯国际集成电路制造(上海)有限公司 The monitoring method of Millisecond annealing technology stability

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0831521A2 (en) * 1996-09-18 1998-03-25 Texas Instruments Incorporated Method for forming a silicide region
EP0836223A2 (en) * 1996-10-08 1998-04-15 Texas Instruments Inc. Method of forming a silicide layer
EP0936664A2 (en) * 1998-02-13 1999-08-18 Sharp Kabushiki Kaisha Partial silicidation method to form shallow source/drain junctions
US5953612A (en) * 1997-06-30 1999-09-14 Vlsi Technology, Inc. Self-aligned silicidation technique to independently form silicides of different thickness on a semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0831521A2 (en) * 1996-09-18 1998-03-25 Texas Instruments Incorporated Method for forming a silicide region
EP0836223A2 (en) * 1996-10-08 1998-04-15 Texas Instruments Inc. Method of forming a silicide layer
US5953612A (en) * 1997-06-30 1999-09-14 Vlsi Technology, Inc. Self-aligned silicidation technique to independently form silicides of different thickness on a semiconductor device
EP0936664A2 (en) * 1998-02-13 1999-08-18 Sharp Kabushiki Kaisha Partial silicidation method to form shallow source/drain junctions

Also Published As

Publication number Publication date
JP2004521486A (en) 2004-07-15
GB0315661D0 (en) 2003-08-13
WO2002047145A1 (en) 2002-06-13
TW531792B (en) 2003-05-11
EP1342260A1 (en) 2003-09-10
CN1633703A (en) 2005-06-29
AU2002230565A1 (en) 2002-06-18
GB2390224A (en) 2003-12-31

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20091210 AND 20091216

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20111203