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TW200739711A - Etching method and recording medium - Google Patents

Etching method and recording medium

Info

Publication number
TW200739711A
TW200739711A TW095149517A TW95149517A TW200739711A TW 200739711 A TW200739711 A TW 200739711A TW 095149517 A TW095149517 A TW 095149517A TW 95149517 A TW95149517 A TW 95149517A TW 200739711 A TW200739711 A TW 200739711A
Authority
TW
Taiwan
Prior art keywords
silicon oxide
oxide film
etching method
reaction product
gas
Prior art date
Application number
TW095149517A
Other languages
Chinese (zh)
Other versions
TWI333674B (en
Inventor
Shigeki Tozawa
Yusuke Muraki
Tadashi Iino
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200739711A publication Critical patent/TW200739711A/en
Application granted granted Critical
Publication of TWI333674B publication Critical patent/TWI333674B/zh

Links

Classifications

    • H10P50/283—

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Disclosed is an etching method which enables to efficiently dry etch silicon oxide films of various kinds. Specifically disclosed is a method for etching a silicon oxide film in which an alteration step, wherein a mixed gas containing a hydrogen fluoride gas HF and an ammonia gas NH3 is supplied onto the surface of the silicon oxide film, and the silicon oxide film and the mixed gas are chemically reacted with each other, thereby altering the silicon oxide film and producing a reaction product, is performed first and then a heating step, wherein the reaction product is removed by heating, is carried out. In the alteration step, the temperature of the silicon oxide film and the partial pressure of the hydrogen fluoride gas HF are adjusted according to the kind of the silicon oxide film.
TW095149517A 2005-12-28 2006-12-28 Etching method and recording medium TW200739711A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005379494A JP4890025B2 (en) 2005-12-28 2005-12-28 Etching method and recording medium

Publications (2)

Publication Number Publication Date
TW200739711A true TW200739711A (en) 2007-10-16
TWI333674B TWI333674B (en) 2010-11-21

Family

ID=38217915

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095149517A TW200739711A (en) 2005-12-28 2006-12-28 Etching method and recording medium

Country Status (3)

Country Link
JP (1) JP4890025B2 (en)
TW (1) TW200739711A (en)
WO (1) WO2007074695A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI727023B (en) * 2016-04-08 2021-05-11 日商東京威力科創股份有限公司 Substrate processing method and substrate processing device

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094307A (en) * 2007-10-10 2009-04-30 Tokyo Electron Ltd Etching method and recording medium
JP5374039B2 (en) * 2007-12-27 2013-12-25 東京エレクトロン株式会社 Substrate processing method, substrate processing apparatus, and storage medium
JP5344824B2 (en) * 2008-01-31 2013-11-20 東京エレクトロン株式会社 Method for forming resist pattern and recording medium
JP4553049B2 (en) 2008-02-29 2010-09-29 エルピーダメモリ株式会社 Manufacturing method of semiconductor device
KR100870914B1 (en) 2008-06-03 2008-11-28 주식회사 테스 Dry etching method of silicon oxide
KR101146118B1 (en) * 2008-12-09 2012-05-16 주식회사 테스 Dry etch method for silicon oxide
JP4968861B2 (en) 2009-03-19 2012-07-04 東京エレクトロン株式会社 Substrate etching method and system
JP6161972B2 (en) 2013-06-25 2017-07-12 東京エレクトロン株式会社 Etching method and recording medium
JP2015056519A (en) 2013-09-12 2015-03-23 東京エレクトロン株式会社 Etching method, etching apparatus and storage medium
JP6405958B2 (en) * 2013-12-26 2018-10-17 東京エレクトロン株式会社 Etching method, storage medium, and etching apparatus
KR101874822B1 (en) * 2016-04-01 2018-07-06 주식회사 테스 Method for selective etching of silicon oxide film
JP6812284B2 (en) 2017-03-28 2021-01-13 東京エレクトロン株式会社 Etching method and recording medium
JP2020043180A (en) 2018-09-07 2020-03-19 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
WO2020054476A1 (en) 2018-09-13 2020-03-19 セントラル硝子株式会社 Method and device for etching silicon oxide
US12371618B2 (en) 2020-03-13 2025-07-29 Central Glass Company, Limited Dry etching method, method for producing semiconductor device, and dry etching gas composition
US11762293B2 (en) 2021-05-11 2023-09-19 United Microelectronics Corp. Fabricating method of reducing photoresist footing
KR102837958B1 (en) 2021-10-27 2025-07-25 도쿄엘렉트론가부시키가이샤 Film forming method and film forming system
JP2023087228A (en) 2021-12-13 2023-06-23 東京エレクトロン株式会社 Gas treatment method and gas treatment apparatus

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
US5282925A (en) * 1992-11-09 1994-02-01 International Business Machines Corporation Device and method for accurate etching and removal of thin film
US6858532B2 (en) * 2002-12-10 2005-02-22 International Business Machines Corporation Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling
KR20050110004A (en) * 2003-03-17 2005-11-22 가부시키가이샤 니콘 Projection optical system, exposure system, and exposure method
US7029536B2 (en) * 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
JP4039385B2 (en) * 2003-04-22 2008-01-30 東京エレクトロン株式会社 Removal method of chemical oxide film
JP4833512B2 (en) * 2003-06-24 2011-12-07 東京エレクトロン株式会社 To-be-processed object processing apparatus, to-be-processed object processing method, and to-be-processed object conveyance method
JP4495470B2 (en) * 2004-01-13 2010-07-07 三星電子株式会社 Etching method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI727023B (en) * 2016-04-08 2021-05-11 日商東京威力科創股份有限公司 Substrate processing method and substrate processing device

Also Published As

Publication number Publication date
JP4890025B2 (en) 2012-03-07
JP2007180418A (en) 2007-07-12
WO2007074695A1 (en) 2007-07-05
TWI333674B (en) 2010-11-21

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