[go: up one dir, main page]

TW200736821A - Pattern forming method and method of producing a gray tone mask - Google Patents

Pattern forming method and method of producing a gray tone mask

Info

Publication number
TW200736821A
TW200736821A TW096106956A TW96106956A TW200736821A TW 200736821 A TW200736821 A TW 200736821A TW 096106956 A TW096106956 A TW 096106956A TW 96106956 A TW96106956 A TW 96106956A TW 200736821 A TW200736821 A TW 200736821A
Authority
TW
Taiwan
Prior art keywords
producing
alignment mark
pattern forming
tone mask
gray tone
Prior art date
Application number
TW096106956A
Other languages
Chinese (zh)
Inventor
Michiaki Sano
Shuho Motomura
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200736821A publication Critical patent/TW200736821A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A pattern forming method includes a step of forming a pattern on a substrate by the use of a plurality of patterning steps using the photolithography. The method at least includes a step of forming an alignment mark for use in alignment of writing positions, and a step of writing a pattern after alignment using the alignment mark. The alignment mark includes a light-shielding portion and a light-transmitting portion. The alignment mark has an antireflection film as an uppermost layer. Prior to the writing step, the antireflection film in the light-shielding portion of the alignment mark is removed.
TW096106956A 2006-03-16 2007-03-01 Pattern forming method and method of producing a gray tone mask TW200736821A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006072705 2006-03-16

Publications (1)

Publication Number Publication Date
TW200736821A true TW200736821A (en) 2007-10-01

Family

ID=38688350

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096106956A TW200736821A (en) 2006-03-16 2007-03-01 Pattern forming method and method of producing a gray tone mask

Country Status (3)

Country Link
KR (1) KR20070094478A (en)
CN (1) CN101038445A (en)
TW (1) TW200736821A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101661145A (en) 2008-08-27 2010-03-03 鸿富锦精密工业（深圳）有限公司 Distance piece array and manufacturing method thereof
JP5479074B2 (en) * 2009-12-21 2014-04-23 Ｈｏｙａ株式会社 Optical element manufacturing method, optical element
CN103890657A (en) * 2011-10-21 2014-06-25 大日本印刷株式会社 Large phase shift mask and manufacturing method of large phase shift mask
CN108020990A (en) * 2016-10-31 2018-05-11 无锡中微掩模电子有限公司 Mask plate for integrated circuit re-expose method
US20210373217A1 (en) * 2018-10-16 2021-12-02 Scivax Corporation Fine pattern forming method, imprint mold manufacturing method, imprint mold, and optical device
CN113448162A (en) * 2021-06-18 2021-09-28 广州仕元光电有限公司 Glass photomask and method for manufacturing the same

Also Published As

Publication number Publication date
CN101038445A (en) 2007-09-19
KR20070094478A (en) 2007-09-20

Similar Documents

Publication Publication Date Title
WO2008149988A1 (en) Patterning method
TW200834245A (en) Method for manufacturing semiconductor device with four-layered laminate
TW200739248A (en) Photomask, method for manufacturing such photomask, pattern forming method using such photomask and mask data creating method
UA97809C2 (en) Multi-layer body and method for producing thereof
TW200736821A (en) Pattern forming method and method of producing a gray tone mask
TW200707083A (en) Method for forming a lithograohy pattern
TW200745740A (en) Mask pattern generating method
JP2009539252A5 (en)
TW200625407A (en) Method for foring a finely patterned resist
SG131856A1 (en) Method of patterning a positive tone resist layer overlaying a lithographic substrate
WO2008114644A1 (en) Resist pattern formation method, and resin composition capable of insolubilizing resist pattern
WO2008149989A1 (en) Patterning method
EP2881790A3 (en) Photomask blank
WO2007136656A3 (en) Colored masking for forming transparent structures
WO2008005208A3 (en) Printing form precursor and process for preparing a stamp from the precursor
WO2010105091A3 (en) Large area dissolvable template lithography
TW200506514A (en) Method for manufacturing gray tone mask, and gray tone mask
JP2006267262A5 (en)
JP2008527736A5 (en)
TW200603253A (en) A semiconductor manufacturing method and an exposure mask
TW200741334A (en) Pattern forming method and gray-tone mask manufacturing method
TW200739249A (en) Photomask, method for manufacturing such photomask and pattern forming method using such photomask
TW200736838A (en) Substrate, method for producing the same, and patterning process using the same
TW200743637A (en) Method of manufacturing hollow micro-needle structures
TW200801806A (en) Method of fabricating a mold