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TW200735259A - Wafer holder for semiconductor manufacturing device and semiconductor manufacturing device - Google Patents

Wafer holder for semiconductor manufacturing device and semiconductor manufacturing device

Info

Publication number
TW200735259A
TW200735259A TW096102723A TW96102723A TW200735259A TW 200735259 A TW200735259 A TW 200735259A TW 096102723 A TW096102723 A TW 096102723A TW 96102723 A TW96102723 A TW 96102723A TW 200735259 A TW200735259 A TW 200735259A
Authority
TW
Taiwan
Prior art keywords
wafer
manufacturing device
semiconductor manufacturing
wafer holder
contact area
Prior art date
Application number
TW096102723A
Other languages
Chinese (zh)
Inventor
Masuhiro Natsuhara
Tomoyuki Awazu
Kenji Shinma
Hirohiko Nakata
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW200735259A publication Critical patent/TW200735259A/en

Links

Classifications

    • H10P72/7611—

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention provides a wafer holder to carry out uniform heating treatment for wafer in high temperature, and thus the wafer will not damage. The manufacturing device for semiconductor is installed with the wafer holder. The radius of wafer is R. The contact area of outer circumference side area excluding the distance from wafer center 1/(2R)<1/2> is A. The contact area of inner circumference side area is B. There is a relation A > B for the wafer loading surface of wafer holder and the wafer contact area. In order to obtain that relation, it is better to form contact portion between the wafer loading surface and the wafer contact area. The shape of the contact portion is making in ring shape protruding portion or embossment shape protruding portion.
TW096102723A 2006-01-26 2007-01-24 Wafer holder for semiconductor manufacturing device and semiconductor manufacturing device TW200735259A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006017296A JP2007201128A (en) 2006-01-26 2006-01-26 Wafer holder for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus

Publications (1)

Publication Number Publication Date
TW200735259A true TW200735259A (en) 2007-09-16

Family

ID=38286163

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096102723A TW200735259A (en) 2006-01-26 2007-01-24 Wafer holder for semiconductor manufacturing device and semiconductor manufacturing device

Country Status (3)

Country Link
US (1) US20070173185A1 (en)
JP (1) JP2007201128A (en)
TW (1) TW200735259A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113402281A (en) * 2021-08-03 2021-09-17 合肥商德应用材料有限公司 Heating element and preparation method and application thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7589190B2 (en) * 2022-03-24 2024-11-25 株式会社ニューフレアテクノロジー Film formation method
KR102902290B1 (en) * 2024-05-27 2025-12-22 엔지케이 인슐레이터 엘티디 Components for semiconductor manufacturing equipment

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6375741B2 (en) * 1991-03-06 2002-04-23 Timothy J. Reardon Semiconductor processing spray coating apparatus
JPH08186081A (en) * 1994-12-29 1996-07-16 F T L:Kk Semiconductor device manufacturing method and semiconductor device manufacturing apparatus
WO1996024949A1 (en) * 1995-02-10 1996-08-15 Tokyo Electron Limited Heat treatment method and apparatus
TW291589B (en) * 1995-03-30 1996-11-21 Ftl Co Ltd
WO1997031389A1 (en) * 1996-02-23 1997-08-28 Tokyo Electron Limited Heat treatment device
US6133550A (en) * 1996-03-22 2000-10-17 Sandia Corporation Method and apparatus for thermal processing of semiconductor substrates
US6562128B1 (en) * 2001-11-28 2003-05-13 Seh America, Inc. In-situ post epitaxial treatment process
JP3980187B2 (en) * 1998-07-24 2007-09-26 日本碍子株式会社 Semiconductor holding device, its manufacturing method and its use
US6767698B2 (en) * 1999-09-29 2004-07-27 Tokyo Electron Limited High speed stripping for damaged photoresist
US6740853B1 (en) * 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
AU2001243246A1 (en) * 2000-03-20 2001-10-03 Tokyo Electron Limited High speed photoresist stripping chamber
US20040182321A1 (en) * 2002-03-13 2004-09-23 Akira Kuibira Holder for semiconductor production system
JP3769262B2 (en) * 2002-12-20 2006-04-19 株式会社東芝 Wafer flatness evaluation method, wafer flatness evaluation apparatus for executing the evaluation method, wafer manufacturing method using the evaluation method, wafer quality assurance method using the evaluation method, and semiconductor device manufacturing using the evaluation method And method for manufacturing semiconductor device using wafer evaluated by the evaluation method
US20050217799A1 (en) * 2004-03-31 2005-10-06 Tokyo Electron Limited Wafer heater assembly

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113402281A (en) * 2021-08-03 2021-09-17 合肥商德应用材料有限公司 Heating element and preparation method and application thereof

Also Published As

Publication number Publication date
US20070173185A1 (en) 2007-07-26
JP2007201128A (en) 2007-08-09

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