TW200721277A - Film deposition method, film deposition system, and storage medium - Google Patents
Film deposition method, film deposition system, and storage mediumInfo
- Publication number
- TW200721277A TW200721277A TW095124851A TW95124851A TW200721277A TW 200721277 A TW200721277 A TW 200721277A TW 095124851 A TW095124851 A TW 095124851A TW 95124851 A TW95124851 A TW 95124851A TW 200721277 A TW200721277 A TW 200721277A
- Authority
- TW
- Taiwan
- Prior art keywords
- film deposition
- containing gas
- gas
- melting metal
- deposition method
- Prior art date
Links
- 238000000151 deposition Methods 0.000 title abstract 6
- 230000008021 deposition Effects 0.000 title abstract 3
- 239000007789 gas Substances 0.000 abstract 10
- 238000002844 melting Methods 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 4
- 239000002994 raw material Substances 0.000 abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 230000000977 initiatory effect Effects 0.000 abstract 1
- 150000001247 metal acetylides Chemical class 0.000 abstract 1
- 150000002736 metal compounds Chemical class 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
To provide a film deposition method capable of keeping the both of a step coverage and a film deposition rate high. In the film deposition method where an organic raw-material gas for a high-melting metal is fed to a treatment vessel 4 capable of evacuation, and any one of a nitrogen-containing gas, a silicon-containing gas, and a carbon-containing gas or a gas mixture comprising two or more of these is fed to the treatment vessel 4, thus a thin metal compound film comprising any one or more of the nitrides, silicides, and carbides of the high-melting metal is formed on the surface of a workpiece placed in the treatment vessel, the step of feeding the organic raw-material gas for a high-melting metal and the step of feeding any one of a nitrogen-containing gas, a silicon-containing gas, and a carbon-containing gas or a gas mixture comprising two or more of these are alternately performed, and further, the temperature of the workpiece is kept at a temperature not lower than the decomposition initiation temperature of the organic raw material for a high-melting metal. In this way, both a step coverage and a film deposition rate are highly held.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005199281 | 2005-07-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200721277A true TW200721277A (en) | 2007-06-01 |
| TWI389184B TWI389184B (en) | 2013-03-11 |
Family
ID=48471164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW95124851A TWI389184B (en) | 2005-07-07 | 2006-07-07 | Film forming method, film forming apparatus and memory medium |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI389184B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI458017B (en) * | 2010-04-12 | 2014-10-21 | 日立國際電氣股份有限公司 | Semiconductor device manufacturing method, substrate processing method, and substrate processing device |
| CN112992741A (en) * | 2021-03-04 | 2021-06-18 | 长江存储科技有限责任公司 | Semiconductor processing apparatus and exhaust method |
-
2006
- 2006-07-07 TW TW95124851A patent/TWI389184B/en not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI458017B (en) * | 2010-04-12 | 2014-10-21 | 日立國際電氣股份有限公司 | Semiconductor device manufacturing method, substrate processing method, and substrate processing device |
| US8946092B2 (en) | 2010-04-12 | 2015-02-03 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus |
| CN112992741A (en) * | 2021-03-04 | 2021-06-18 | 长江存储科技有限责任公司 | Semiconductor processing apparatus and exhaust method |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI389184B (en) | 2013-03-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |