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TW200729401A - Chip structure and method for fabricating the same - Google Patents

Chip structure and method for fabricating the same

Info

Publication number
TW200729401A
TW200729401A TW095135704A TW95135704A TW200729401A TW 200729401 A TW200729401 A TW 200729401A TW 095135704 A TW095135704 A TW 095135704A TW 95135704 A TW95135704 A TW 95135704A TW 200729401 A TW200729401 A TW 200729401A
Authority
TW
Taiwan
Prior art keywords
metal structure
top layer
protecting layer
thin film
thin
Prior art date
Application number
TW095135704A
Other languages
Chinese (zh)
Other versions
TWI331788B (en
Inventor
Mou-Shiung Lin
Chien-Kang Chou
Hsin-Jung Lo
Original Assignee
Megica Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Megica Corp filed Critical Megica Corp
Priority to TW95135704A priority Critical patent/TWI331788B/en
Publication of TW200729401A publication Critical patent/TW200729401A/en
Application granted granted Critical
Publication of TWI331788B publication Critical patent/TWI331788B/en

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

The invention provides a post-passivation of top layer metal structure for high performance integrated circuit. The integrated circuit comprises semiconductor base, a thin film metal structure, a protecting layer, and a top layer metal structure. The semiconductor component is formed in the semiconductor base. The thin film metal structure comprises thin metal inner connecting wire to connect with the semiconductor component. The protecting layer is formed on the thin film metal structure. The opening hole of the protecting layer can expose the connecting pad of thin metal inner connecting wire. The top layer metal structure is formed on the protecting layer and connects with the thin metal inner connecting wire. The top layer metal structure comprises top layer metal circuit with thickness and width far larger than the thin metal inner connecting wire under the protecting layer. It can connect many portions of thin film metal structure under the protecting layer through the top layer metal structure. The product of electric resistance and capacitance for the top layer metal structure on the protecting layer is far less than the product of electric resistance and capacitance of thin film metal structure under the protecting layer.
TW95135704A 2005-09-23 2005-09-23 Chip structure and method for fabricating the same TWI331788B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95135704A TWI331788B (en) 2005-09-23 2005-09-23 Chip structure and method for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95135704A TWI331788B (en) 2005-09-23 2005-09-23 Chip structure and method for fabricating the same

Publications (2)

Publication Number Publication Date
TW200729401A true TW200729401A (en) 2007-08-01
TWI331788B TWI331788B (en) 2010-10-11

Family

ID=45074661

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95135704A TWI331788B (en) 2005-09-23 2005-09-23 Chip structure and method for fabricating the same

Country Status (1)

Country Link
TW (1) TWI331788B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI396004B (en) * 2009-08-26 2013-05-11 Au Optronics Corp Electronic apparatus
TWI451493B (en) * 2007-09-29 2014-09-01 蘭姆研究公司 Low dielectric constant material and metal process integration method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI446531B (en) 2011-05-17 2014-07-21 Au Optronics Corp Pixel structure and electrical bridging structure
US20250218940A1 (en) * 2023-12-27 2025-07-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method of fabricating a semiconductor structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI451493B (en) * 2007-09-29 2014-09-01 蘭姆研究公司 Low dielectric constant material and metal process integration method
TWI396004B (en) * 2009-08-26 2013-05-11 Au Optronics Corp Electronic apparatus

Also Published As

Publication number Publication date
TWI331788B (en) 2010-10-11

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees