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TW200728264A - New compound, acid genelator, chemically amplified photoresist composition, resist laminate, and process for forming resist pattern - Google Patents

New compound, acid genelator, chemically amplified photoresist composition, resist laminate, and process for forming resist pattern

Info

Publication number
TW200728264A
TW200728264A TW095138227A TW95138227A TW200728264A TW 200728264 A TW200728264 A TW 200728264A TW 095138227 A TW095138227 A TW 095138227A TW 95138227 A TW95138227 A TW 95138227A TW 200728264 A TW200728264 A TW 200728264A
Authority
TW
Taiwan
Prior art keywords
compound
photoresist composition
chemically amplified
amplified photoresist
genelator
Prior art date
Application number
TW095138227A
Other languages
Chinese (zh)
Other versions
TWI323251B (en
Inventor
Koji Saito
Hideo Hada
Yasushi Washio
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005304123A external-priority patent/JP4828201B2/en
Priority claimed from JP2005303926A external-priority patent/JP4823640B2/en
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200728264A publication Critical patent/TW200728264A/en
Application granted granted Critical
Publication of TWI323251B publication Critical patent/TWI323251B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

A compound which exhibits high absorption in a long wavelength region of not less than 365 nm, having high sensitivity at a long wavelength region of not less than 365 nm, and excellent solubility to organic solvents, an acid generator consisting of the compound, a chemically amplified photoresist composition which contains the compound, a resist layer laminate which uses the compound, and a process for forming a resist pattern using the compound are provided. Such a compound is expressed by the following general formula (B1). In formula (B1), at least one of R1, R2 and R3 represents a group expressed by the following general formula (B1a); Y represents a group obtained by removing two hydrogen atoms from an aromatic ring which may contain substituents; Z represents a group obtained by removing one hydrogen atom from an aromatic ring which may contain substituents; an aromatic ring in at least one of Y and Z has at least one alkoxy group: (B1), (B1a).
TW95138227A 2005-10-19 2006-10-17 New compound, acid genelator, chemically amplified photoresist composition, resist laminate, and process for forming resist pattern TWI323251B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005304123A JP4828201B2 (en) 2005-10-19 2005-10-19 Chemically amplified photoresist composition, resist layer laminate, and resist pattern forming method
JP2005303926A JP4823640B2 (en) 2005-10-19 2005-10-19 NOVEL ACID GENERATOR, CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION, RESIST LAYER LAMINATE, AND RESIST PATTERN FORMING METHOD

Publications (2)

Publication Number Publication Date
TW200728264A true TW200728264A (en) 2007-08-01
TWI323251B TWI323251B (en) 2010-04-11

Family

ID=37962535

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95138227A TWI323251B (en) 2005-10-19 2006-10-17 New compound, acid genelator, chemically amplified photoresist composition, resist laminate, and process for forming resist pattern

Country Status (2)

Country Link
TW (1) TWI323251B (en)
WO (1) WO2007046442A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2007126066A1 (en) * 2006-04-28 2009-09-10 川崎化成工業株式会社 Photopolymerization initiator and photocurable composition
JP6848776B2 (en) * 2016-10-12 2021-03-24 信越化学工業株式会社 Sulfonium compound, resist composition, and pattern forming method
JP6948828B2 (en) * 2017-05-12 2021-10-13 東洋合成工業株式会社 Iodonium salt compounds, photoacid generators and compositions containing them, and methods for manufacturing devices.

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH107649A (en) * 1996-06-18 1998-01-13 Nippon Kayaku Co Ltd Photopolymerization initiator, energy-ray curable composition containing the initiator and its cured product
AU2003268671A1 (en) * 2002-09-25 2004-04-19 Asahi Denka Co.Ltd. Novel aromatic sulfonium salt compound, photo-acid generator comprising the same and photopolymerizable composition containing the same, resin composition for optical three-dimensional shaping, and method of optically forming three-dimensional shape
KR101197539B1 (en) * 2003-11-04 2012-11-12 헨켈 아게 운트 코. 카게아아 Sulfonium salt photoinitiators and use thereof

Also Published As

Publication number Publication date
WO2007046442A1 (en) 2007-04-26
TWI323251B (en) 2010-04-11

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