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TW200728237A - Sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein - Google Patents

Sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein

Info

Publication number
TW200728237A
TW200728237A TW095135882A TW95135882A TW200728237A TW 200728237 A TW200728237 A TW 200728237A TW 095135882 A TW095135882 A TW 095135882A TW 95135882 A TW95135882 A TW 95135882A TW 200728237 A TW200728237 A TW 200728237A
Authority
TW
Taiwan
Prior art keywords
mole
composition
film
sputtering target
producing
Prior art date
Application number
TW095135882A
Other languages
English (en)
Inventor
Prabhat Kumar
Gerhard Woetting
Rong-Chein Richard Wu
Original Assignee
Starck H C Gmbh
H C Starck Ceramics Gmbh & Co Kg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Starck H C Gmbh, H C Starck Ceramics Gmbh & Co Kg filed Critical Starck H C Gmbh
Publication of TW200728237A publication Critical patent/TW200728237A/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
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    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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    • C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/6261—Milling
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    • C04B35/645—Pressure sintering
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
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  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
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  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
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  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
TW095135882A 2005-09-29 2006-09-28 Sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein TW200728237A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/238,366 US20070071985A1 (en) 2005-09-29 2005-09-29 Sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein

Publications (1)

Publication Number Publication Date
TW200728237A true TW200728237A (en) 2007-08-01

Family

ID=37497938

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095135882A TW200728237A (en) 2005-09-29 2006-09-28 Sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein

Country Status (8)

Country Link
US (1) US20070071985A1 (zh)
EP (1) EP1931605A1 (zh)
JP (1) JP2009510263A (zh)
KR (1) KR20080058390A (zh)
CN (1) CN101277910A (zh)
CA (1) CA2623404A1 (zh)
TW (1) TW200728237A (zh)
WO (1) WO2007041081A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI819205B (zh) * 2019-03-29 2023-10-21 奧地利商攀時歐洲公司 製造含氧化鉬層的濺鍍靶

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* Cited by examiner, † Cited by third party
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US7452488B2 (en) * 2006-10-31 2008-11-18 H.C. Starck Inc. Tin oxide-based sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein
JP5213458B2 (ja) * 2008-01-08 2013-06-19 キヤノン株式会社 アモルファス酸化物及び電界効果型トランジスタ
JP5363742B2 (ja) * 2008-01-20 2013-12-11 学校法人金沢工業大学 酸化亜鉛系透明導電膜
EP2767610B1 (en) * 2013-02-18 2015-12-30 Heraeus Deutschland GmbH & Co. KG ZnO-Al2O3-MgO sputtering target and method for the production thereof
DE102013103679A1 (de) * 2013-04-11 2014-10-30 Heraeus Materials Technology Gmbh & Co. Kg Licht absorbierende Schicht und die Schicht enthaltendes Schichtsystem, Verfahren zur dessen Herstellung und dafür geeignetes Sputtertarget
JP5861719B2 (ja) * 2014-01-17 2016-02-16 Tdk株式会社 透明導電体及びタッチパネル
DE102014111935A1 (de) 2014-08-20 2016-02-25 Heraeus Deutschland GmbH & Co. KG Zweilagiges Schichtsystem mit teilabsorbierender Schicht sowie Verfahren und Sputtertarget zur Herstellung dieser Schicht
EP3018111A1 (en) * 2014-11-07 2016-05-11 Plansee SE Metal oxide thin film, method for depositing metal oxide thin film and device comprising metal oxide thin film
CN105274486A (zh) * 2015-11-18 2016-01-27 南京迪纳科光电材料有限公司 一种非结晶AlGaZnO透明电极材料的制备方法
US11728390B2 (en) * 2017-02-01 2023-08-15 Idemitsu Kosan Co., Ltd. Oxide semiconductor film, thin film transistor, oxide sintered body, and sputtering target
WO2020031410A1 (ja) * 2018-08-09 2020-02-13 Ｊｘ金属株式会社 酸化物スパッタリングターゲット及びその製造方法、並びに当該酸化物スパッタリングターゲットを用いて成膜した酸化物薄膜
CN109136863A (zh) * 2018-08-16 2019-01-04 研创应用材料（赣州）股份有限公司 一种高耐候性的rpd用多元导电氧化物薄膜的制备方法
EP3715497A1 (de) * 2019-03-29 2020-09-30 Plansee SE Sputteringtarget zur herstellung molybdänoxidhaltiger schichten
KR102315283B1 (ko) 2020-12-10 2021-10-21 엘티메탈 주식회사 몰리브덴 산화물을 주된 성분으로 하는 금속 산화물 박막 및 이러한 박막이 형성된 박막트랜지스터와 디스플레이 장치
KR102315308B1 (ko) 2020-12-10 2021-10-21 엘티메탈 주식회사 몰리브덴 산화물을 주된 성분으로 하는 금속 산화물 소결체 및 이를 포함하는 스퍼터링 타겟
KR20220082407A (ko) 2020-12-10 2022-06-17 엘티메탈 주식회사 저반사율의 박막을 형성하는 금속 산화물 소결체 및 이를 이용한 스퍼터링 타겟
KR102646917B1 (ko) 2021-09-16 2024-03-13 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치
WO2023059071A1 (ko) * 2021-10-06 2023-04-13 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치
TWI839845B (zh) 2021-10-06 2024-04-21 南韓商Ｌｔ金屬股份有限公司 氧化鉬基燒結體、濺鍍靶材、使用燒結體的氧化物薄膜、包含薄膜的薄膜電晶體及顯示裝置
US20250003056A1 (en) * 2021-11-22 2025-01-02 Corning Incorporated Amorphous transparent conductive oxide films and methods of fabricating the same
CN114591070B (zh) * 2022-01-11 2023-04-04 先导薄膜材料有限公司 一种高纯度的Mo掺杂ITO靶材的制备方法
CN114477994A (zh) * 2022-01-25 2022-05-13 广东爱晟电子科技有限公司 一种大功率陶瓷芯片电阻及其材料和制备
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