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TW200712198A - Copper passivating post-chemical mechanical polishing cleaning composition and method of use - Google Patents

Copper passivating post-chemical mechanical polishing cleaning composition and method of use

Info

Publication number
TW200712198A
TW200712198A TW095118751A TW95118751A TW200712198A TW 200712198 A TW200712198 A TW 200712198A TW 095118751 A TW095118751 A TW 095118751A TW 95118751 A TW95118751 A TW 95118751A TW 200712198 A TW200712198 A TW 200712198A
Authority
TW
Taiwan
Prior art keywords
mechanical polishing
chemical mechanical
residue
post
cleaning composition
Prior art date
Application number
TW095118751A
Other languages
Chinese (zh)
Other versions
TWI418622B (en
Inventor
Jeffrey A Barnes
Elizabeth Walker
Darryl W Peters
Kyle Bartosh
Ewa B Oldak
P Yanders Kevin
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Publication of TW200712198A publication Critical patent/TW200712198A/en
Application granted granted Critical
Publication of TWI418622B publication Critical patent/TWI418622B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • H10P70/277—
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

Alkaline aqueous cleaning compositions and processes for cleaning post-chemical mechanical polishing (CMP) residue, post-etch residue and/or contaminants from a microelectronic device having said residue and contaminants thereon. The alkaline aqueous cleaning compositions include amine, passivating agent, and water. The composition achieves highly efficacious cleaning of the residue and contaminant material from the microelectronic device while simultaneously passivating the metal interconnect material.
TW095118751A 2005-05-26 2006-05-26 Chemical mechanical polishing polishing composition after copper passivation and method for using the same TWI418622B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US68481205P 2005-05-26 2005-05-26
US73603605P 2005-11-10 2005-11-10
US77312606P 2006-02-13 2006-02-13

Publications (2)

Publication Number Publication Date
TW200712198A true TW200712198A (en) 2007-04-01
TWI418622B TWI418622B (en) 2013-12-11

Family

ID=37452361

Family Applications (3)

Application Number Title Priority Date Filing Date
TW104127160A TWI576428B (en) 2005-05-26 2006-05-26 Chemical mechanical polishing polishing composition after copper passivation and method for using the same
TW095118751A TWI418622B (en) 2005-05-26 2006-05-26 Chemical mechanical polishing polishing composition after copper passivation and method for using the same
TW102111101A TWI507521B (en) 2005-05-26 2006-05-26 Chemical mechanical polishing polishing composition after copper passivation and method for using the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW104127160A TWI576428B (en) 2005-05-26 2006-05-26 Chemical mechanical polishing polishing composition after copper passivation and method for using the same

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW102111101A TWI507521B (en) 2005-05-26 2006-05-26 Chemical mechanical polishing polishing composition after copper passivation and method for using the same

Country Status (7)

Country Link
EP (1) EP1888735B1 (en)
JP (1) JP2008543060A (en)
KR (1) KR20080025697A (en)
IL (1) IL187566A0 (en)
SG (1) SG162725A1 (en)
TW (3) TWI576428B (en)
WO (1) WO2006127885A1 (en)

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TWI752196B (en) * 2017-03-17 2022-01-11 日商三菱化學股份有限公司 Cleaner composition for semiconductor device substrate, cleaning method for semiconductor device substrate, manufacturing method for semiconductor device substrate, and semiconductor device substrate

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KR101406761B1 (en) * 2012-10-22 2014-07-02 주식회사 케이씨텍 Cleaning solution composition and the cleaning method therewith
KR102118964B1 (en) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Compositions for cleaning iii-v semiconductor materials and methods of using same
US10472567B2 (en) 2013-03-04 2019-11-12 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
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JP6723152B2 (en) 2013-06-06 2020-07-15 インテグリス・インコーポレーテッド Compositions and methods for selectively etching titanium nitride
CN105431506A (en) 2013-07-31 2016-03-23 高级技术材料公司 Cu/W Compatible Aqueous Formulation for Metal Hardmask and Post-Etch Residue Removal
SG11201601158VA (en) 2013-08-30 2016-03-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
CN104427781B (en) * 2013-09-11 2019-05-17 花王株式会社 Detergent composition for resin mask layer and manufacturing method of circuit board
KR102256773B1 (en) 2013-11-08 2021-05-27 후지 필름 일렉트로닉 머트리얼즈 가부시키가이샤 Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface
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WO2015116818A1 (en) 2014-01-29 2015-08-06 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
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JP2017519862A (en) * 2014-06-04 2017-07-20 インテグリス・インコーポレーテッド Anti-reflective coating cleaning and post-etch residue removal composition having metal, dielectric and nitride compatibility
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JP2017011225A (en) * 2015-06-25 2017-01-12 株式会社フジミインコーポレーテッド Polishing method, composition for removing impurity, and substrate and method for manufacturing the same
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JP2018026461A (en) * 2016-08-10 2018-02-15 株式会社荏原製作所 Substrate cleaning technique after chemical mechanical polishing
KR102766684B1 (en) * 2018-04-26 2025-02-11 미츠비시 가스 가가쿠 가부시키가이샤 Resin composition, laminate, semiconductor wafer having resin composition layer attached thereto, semiconductor mounting substrate having resin composition layer attached thereto, and semiconductor device
JP7220040B2 (en) * 2018-09-20 2023-02-09 関東化学株式会社 cleaning liquid composition
WO2020257103A1 (en) * 2019-06-19 2020-12-24 Versum Materials Us, Llc Cleaning composition for semiconductor substrates
KR102816282B1 (en) 2021-03-31 2025-06-05 가부시키가이샤 후지미인코퍼레이티드 Surface treatment composition, surface treatment method and method for manufacturing semiconductor substrate
CN113774390B (en) * 2021-08-12 2023-08-04 上海新阳半导体材料股份有限公司 Cleaning liquid for chemical mechanical polishing and preparation method thereof
CN113774391B (en) * 2021-08-12 2023-08-04 上海新阳半导体材料股份有限公司 Application of cleaning liquid after chemical mechanical polishing
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Also Published As

Publication number Publication date
TWI576428B (en) 2017-04-01
TW201600594A (en) 2016-01-01
TW201329225A (en) 2013-07-16
IL187566A0 (en) 2008-03-20
KR20080025697A (en) 2008-03-21
EP1888735A4 (en) 2011-01-19
TWI418622B (en) 2013-12-11
WO2006127885A1 (en) 2006-11-30
EP1888735A1 (en) 2008-02-20
EP1888735B1 (en) 2013-08-07
JP2008543060A (en) 2008-11-27
SG162725A1 (en) 2010-07-29
TWI507521B (en) 2015-11-11

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