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TW200711158A - Semiconductor laser device through the application of phonon-assisted light amplification technique, and its manufacturing method - Google Patents

Semiconductor laser device through the application of phonon-assisted light amplification technique, and its manufacturing method

Info

Publication number
TW200711158A
TW200711158A TW094130110A TW94130110A TW200711158A TW 200711158 A TW200711158 A TW 200711158A TW 094130110 A TW094130110 A TW 094130110A TW 94130110 A TW94130110 A TW 94130110A TW 200711158 A TW200711158 A TW 200711158A
Authority
TW
Taiwan
Prior art keywords
phonon
manufacturing
laser device
application
semiconductor laser
Prior art date
Application number
TW094130110A
Other languages
Chinese (zh)
Other versions
TWI268002B (en
Inventor
Chin-Fuh Lin
Tsu-Ting Huang
Shu-Chia Hsu
Kong-An Lin
Eih-Zhe Liang
Original Assignee
Univ Nat Taiwan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Taiwan filed Critical Univ Nat Taiwan
Priority to TW94130110A priority Critical patent/TWI268002B/en
Application granted granted Critical
Publication of TWI268002B publication Critical patent/TWI268002B/en
Publication of TW200711158A publication Critical patent/TW200711158A/en

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  • Semiconductor Lasers (AREA)

Abstract

This invention reveals a semiconductor laser device through the application of phonon-assisted light amplification technique, and its manufacturing method. Firstly, it forms the conductive layer upon the semiconductor silicon substrate. Further, through the current-flowing manner, it performs electroluminescent (EL) light emitting. Furthermore, using of silicon dioxide nano-particles between the conduction layer and the semiconductor silicon substrate, it forms metal-oxide semiconductor junction to achieve carrier confinement. It Moreover, it enhances the phonon-assisted light-emitting mechanism. Eventually, it improves the electroluminescent efficiency of silicon, and achieves the effect of lasing.
TW94130110A 2005-09-02 2005-09-02 Semiconductor laser device through the application of phonon-assisted light amplification technique, and its manufacturing method TWI268002B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94130110A TWI268002B (en) 2005-09-02 2005-09-02 Semiconductor laser device through the application of phonon-assisted light amplification technique, and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94130110A TWI268002B (en) 2005-09-02 2005-09-02 Semiconductor laser device through the application of phonon-assisted light amplification technique, and its manufacturing method

Publications (2)

Publication Number Publication Date
TWI268002B TWI268002B (en) 2006-12-01
TW200711158A true TW200711158A (en) 2007-03-16

Family

ID=38220515

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94130110A TWI268002B (en) 2005-09-02 2005-09-02 Semiconductor laser device through the application of phonon-assisted light amplification technique, and its manufacturing method

Country Status (1)

Country Link
TW (1) TWI268002B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI759044B (en) * 2020-12-30 2022-03-21 環球晶圓股份有限公司 Laser engraving method of silicon carbide wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI759044B (en) * 2020-12-30 2022-03-21 環球晶圓股份有限公司 Laser engraving method of silicon carbide wafer

Also Published As

Publication number Publication date
TWI268002B (en) 2006-12-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees