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TW200710926A - Method for fabricating semiconductor device and semiconductor device - Google Patents

Method for fabricating semiconductor device and semiconductor device

Info

Publication number
TW200710926A
TW200710926A TW095107027A TW95107027A TW200710926A TW 200710926 A TW200710926 A TW 200710926A TW 095107027 A TW095107027 A TW 095107027A TW 95107027 A TW95107027 A TW 95107027A TW 200710926 A TW200710926 A TW 200710926A
Authority
TW
Taiwan
Prior art keywords
thin film
semiconductor device
opening
conductive material
fabricating
Prior art date
Application number
TW095107027A
Other languages
Chinese (zh)
Other versions
TWI316731B (en
Inventor
Akihiro Kojima
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200710926A publication Critical patent/TW200710926A/en
Application granted granted Critical
Publication of TWI316731B publication Critical patent/TWI316731B/en

Links

Classifications

    • H10W20/037—
    • H10W20/072—
    • H10W20/075—
    • H10W20/076—
    • H10W20/46—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A method of fabricating a semiconductor device having an air-gapped multilayer interconnect wiring structure is disclosed. After having formed a first thin film on or above a substrate, define a first opening in the first thin film. Then, deposit a conductive material in the first opening. Then form a second thin film made of a porous material above the first thin film with the conductive material being deposited in the first opening. Next, define in the second thin film a second opening extending therethrough, followed by deposition of a conductive material in the second opening. The first thin film is removed through voids in the second thin film after having deposited the conductive material in the second opening. An integrated semiconductor device as manufactured thereby is also disclosed.
TW095107027A 2005-03-22 2006-03-02 Method for fabricating semiconductor device and semiconductor device TWI316731B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005082325A JP4679193B2 (en) 2005-03-22 2005-03-22 Semiconductor device manufacturing method and semiconductor device

Publications (2)

Publication Number Publication Date
TW200710926A true TW200710926A (en) 2007-03-16
TWI316731B TWI316731B (en) 2009-11-01

Family

ID=37035769

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095107027A TWI316731B (en) 2005-03-22 2006-03-02 Method for fabricating semiconductor device and semiconductor device

Country Status (3)

Country Link
US (2) US7439185B2 (en)
JP (1) JP4679193B2 (en)
TW (1) TWI316731B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI414002B (en) * 2009-11-17 2013-11-01 東芝股份有限公司 Semiconductor device manufacturing method

Also Published As

Publication number Publication date
US7439185B2 (en) 2008-10-21
US7884474B2 (en) 2011-02-08
JP2006269537A (en) 2006-10-05
US20060216920A1 (en) 2006-09-28
TWI316731B (en) 2009-11-01
US20090065946A1 (en) 2009-03-12
JP4679193B2 (en) 2011-04-27

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees