[go: up one dir, main page]

TW200710567A - Resist compound and resist composition - Google Patents

Resist compound and resist composition

Info

Publication number
TW200710567A
TW200710567A TW095119850A TW95119850A TW200710567A TW 200710567 A TW200710567 A TW 200710567A TW 095119850 A TW095119850 A TW 095119850A TW 95119850 A TW95119850 A TW 95119850A TW 200710567 A TW200710567 A TW 200710567A
Authority
TW
Taiwan
Prior art keywords
group
resist
molecule
compound
resist composition
Prior art date
Application number
TW095119850A
Other languages
Chinese (zh)
Inventor
Masatoshi Echigo
Dai Oguro
Original Assignee
Mitsubishi Gas Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co filed Critical Mitsubishi Gas Chemical Co
Publication of TW200710567A publication Critical patent/TW200710567A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/02—Ethers
    • C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
    • C07C43/225—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing halogen
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D303/00—Compounds containing three-membered rings having one oxygen atom as the only ring hetero atom
    • C07D303/02—Compounds containing oxirane rings
    • C07D303/12—Compounds containing oxirane rings with hydrocarbon radicals, substituted by singly or doubly bound oxygen atoms
    • C07D303/18—Compounds containing oxirane rings with hydrocarbon radicals, substituted by singly or doubly bound oxygen atoms by etherified hydroxyl radicals
    • C07D303/20—Ethers with hydroxy compounds containing no oxirane rings
    • C07D303/22—Ethers with hydroxy compounds containing no oxirane rings with monohydroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Epoxy Compounds (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

A resist composition which comprises one or more resist compounds (A) satisfying all of the requirements of (a) having, in the molecule thereof, at least one crosslinking group undergoing a crosslinking reaction directly or indirectly by the irradiation with any radiation selected from the group consisting of a visible light, an ultraviolet ray, an excimer laser, an extreme ultraviolet ray (EUV), an electron beam, an X-ray and an ion beam, (b) having, in the molecule thereof, one or more functional groups selected from the group consisting of a urea group, a urethane group, an amino group and an imido group, (c) having a molecular weight of 500 to 5000, and (d) having a branched structure ; and the resist compound. The above resist composition allows the formation of a resist pattern exhibiting an enhanced resolution, which results in the manufacture of a semiconductor element having a higher integration degree.
TW095119850A 2005-06-06 2006-06-05 Resist compound and resist composition TW200710567A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005165470 2005-06-06

Publications (1)

Publication Number Publication Date
TW200710567A true TW200710567A (en) 2007-03-16

Family

ID=37498339

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095119850A TW200710567A (en) 2005-06-06 2006-06-05 Resist compound and resist composition

Country Status (3)

Country Link
JP (4) JP4998261B2 (en)
TW (1) TW200710567A (en)
WO (1) WO2006132139A1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103415541A (en) * 2011-03-08 2013-11-27 Dic株式会社 Radically curable compound, cured product of same, and method for producing same
CN104822715A (en) * 2012-11-28 2015-08-05 Dic株式会社 Compound containing phenolic hydroxy group, composition containing phenolic hydroxy group, resin containing (meth)acryloyl group, curable composition and cured product thereof, and resist material
TWI602805B (en) * 2013-02-08 2017-10-21 三菱瓦斯化學股份有限公司 Novel allylic compound and method of producing the same
CN107438596A (en) * 2016-04-12 2017-12-05 株式会社Lg化学 Compounds and organic electronic components containing them
CN107848946A (en) * 2015-07-23 2018-03-27 三菱瓦斯化学株式会社 New (methyl) acryl compound and its manufacture method
TWI693211B (en) * 2013-09-30 2020-05-11 日商東京應化工業股份有限公司 Method for manufacturing vinyl-containing compound

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI494697B (en) * 2004-12-24 2015-08-01 Mitsubishi Gas Chemical Co Resist compound
WO2006132139A1 (en) * 2005-06-06 2006-12-14 Mitsubishi Gas Chemical Company, Inc. Compound for resist and resist composition
JP5465392B2 (en) * 2008-02-28 2014-04-09 富士フイルム株式会社 Photoresist liquid and etching method using the same
JP5465393B2 (en) * 2008-02-28 2014-04-09 富士フイルム株式会社 Photoresist liquid and etching method using the same
TW200906869A (en) * 2007-05-30 2009-02-16 Toagosei Co Ltd Active energy ray curable composition and optical material
JP2009234997A (en) * 2008-03-27 2009-10-15 Osaka Gas Co Ltd Compound containing fluorene skeleton
WO2009143482A2 (en) * 2008-05-22 2009-11-26 Georgia Tech Research Corporation Negative tone molecular glass resists and methods of making and using same
JP4888473B2 (en) 2008-11-20 2012-02-29 ソニー株式会社 Mounting board
JP5846622B2 (en) * 2010-12-16 2016-01-20 富士フイルム株式会社 Photosensitive resin composition, cured film, method for forming cured film, organic EL display device, and liquid crystal display device
JP5454749B1 (en) * 2012-07-25 2014-03-26 Ｄｉｃ株式会社 Radical curable compound, method for producing radical curable compound, radical curable composition, cured product thereof, and composition for resist material
ES2672197T3 (en) 2012-12-20 2018-06-13 Enplas Corporation Drip irrigation emitter and drip irrigation device equipped with it
WO2014123032A1 (en) 2013-02-08 2014-08-14 三菱瓦斯化学株式会社 Resist composition, resist pattern formation method, and polyphenol derivative used in same
CN108863732A (en) * 2013-03-29 2018-11-23 东京应化工业株式会社 Fluorenes based compound containing vinyl
KR101829520B1 (en) * 2013-03-29 2018-02-14 도오꾜오까고오교 가부시끼가이샤 Composition containing vinyl-group-containing compound
JP6486266B2 (en) 2013-03-29 2019-03-20 東京応化工業株式会社 Compounds containing structural units derived from vinyl ether compounds
JP6370093B2 (en) * 2013-06-03 2018-08-08 東京応化工業株式会社 Photosensitive composition containing vinyl group-containing compound
JP5741669B2 (en) * 2013-11-20 2015-07-01 Dic株式会社 Acrylic polymer, curable composition, cured product thereof, and composition for resist material
US10745372B2 (en) * 2014-12-25 2020-08-18 Mitsubishi Gas Chemical Company, Inc. Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method
CN107428717B (en) 2015-03-31 2021-04-23 三菱瓦斯化学株式会社 Resist composition, resist pattern forming method, and polyphenol compound used therefor
SG11201706306SA (en) 2015-03-31 2017-09-28 Mitsubishi Gas Chemical Co Compound, resist composition, and method for forming resist pattern using it
KR20180030847A (en) 2015-07-23 2018-03-26 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 Novel compounds and methods for their preparation
KR20180048733A (en) 2015-08-31 2018-05-10 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 A lower layer film forming material for lithography, a composition for forming a lower layer film for lithography, a lower layer film for lithography and a manufacturing method thereof, a pattern forming method, a resin, and a refining method
US11137686B2 (en) 2015-08-31 2021-10-05 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method
EP3348542A4 (en) 2015-09-10 2019-04-03 Mitsubishi Gas Chemical Company, Inc. COMPOUND, RESIN, PHOTOSENSITIVE RESIN COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, PROCESS FOR FORMING PHOTOSENSITIVE RESIN PATTERN, PROCESS FOR PRODUCING AMORPHOUS FILM, MATERIAL FOR FORMING LITHOGRAPHIC UNDER-LAYER FILM, COMPOSITION FOR FORMING SUB-LAYER FILM LITHOGRAPHIC, METHOD FOR FORMING CIRCUIT PATTERN AND PURIFICATION METHOD
WO2018099835A1 (en) 2016-11-30 2018-06-07 Az Electronic Materials (Luxembourg) S.A.R.L. Carbon-comprising underlayer-forming composition and methods for manufacturing carbon-comprising underlayer and device using the same
JP2019086545A (en) 2017-11-01 2019-06-06 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ Allyloxy derivative, resist underlayer forming composition using the same, and method of manufacturing resist underlayer and semiconductor device using the same
US11022882B2 (en) * 2018-06-20 2021-06-01 Shin-Etsu Chemical Co., Ltd. Compound and composition for forming organic film
WO2020009554A1 (en) * 2018-07-06 2020-01-09 주식회사 엘지화학 Novel compound and organic light-emitting device using same
KR102233421B1 (en) * 2018-07-06 2021-03-29 주식회사 엘지화학 Novel compound and organic light emitting device comprising the same
CN115028808A (en) * 2021-03-05 2022-09-09 华为技术有限公司 Polymer material, method for producing the same, composition, optical member and device
KR102632885B1 (en) * 2021-08-19 2024-02-05 이근수 Fluorene-based organic compound, organic film having thereof and application thereof
JP7739990B2 (en) * 2021-12-07 2025-09-17 Dic株式会社 Curable resin composition, cured product, insulating material, and resist member
JP7739991B2 (en) * 2021-12-07 2025-09-17 Dic株式会社 Curable resin compositions, cured products and articles
CN115725015B (en) * 2022-11-11 2025-10-17 阜阳欣奕华新材料科技股份有限公司 KrF resin, preparation method thereof and chemically amplified photoresist

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02160242A (en) * 1988-12-14 1990-06-20 Hitachi Chem Co Ltd Photosensitive resin composition
JPH02252724A (en) * 1989-03-28 1990-10-11 Dainippon Ink & Chem Inc Novel epoxy resin composition
JPH05309943A (en) * 1992-05-11 1993-11-22 Nippon Kayaku Co Ltd Thermal recording material
JPH06107769A (en) * 1992-10-01 1994-04-19 Sumitomo Chem Co Ltd Epoxy resin, composition thereof, and resin-encapsulated semiconductor device
JP2801494B2 (en) * 1993-04-01 1998-09-21 帝人株式会社 Diallyl compound and method for producing crosslinked polymer using said compound
JPH08310985A (en) * 1995-05-12 1996-11-26 Nippon Kayaku Co Ltd Polyphenolic compound, epoxy resin, epoxy resin composition and cured product thereof
AU4096399A (en) * 1998-05-29 1999-12-20 Dow Chemical Company, The Epoxidation process for aryl allyl ethers
JP2002047335A (en) * 2000-08-03 2002-02-12 Osaka Gas Co Ltd Photopolymerizable fluorene resin composition, cured resin and manufacturing method
JP4646439B2 (en) * 2001-05-23 2011-03-09 大阪瓦斯株式会社 Photopolymerizable resin composition, cured product thereof and production method
JP2003082061A (en) * 2001-09-10 2003-03-19 Asahi Denka Kogyo Kk Curable composition
JP2004137200A (en) * 2002-10-17 2004-05-13 Jfe Chemical Corp Method for producing fluorenylidene diallyl phenol
WO2005093516A1 (en) * 2004-03-25 2005-10-06 Mitsubishi Gas Chemical Company, Inc. Resist composition
EP1739485B1 (en) * 2004-04-15 2016-08-31 Mitsubishi Gas Chemical Company, Inc. Resist composition
WO2005114331A1 (en) * 2004-05-21 2005-12-01 Mitsubishi Gas Chemical Company, Inc. Resist compound and resist composition
WO2006132139A1 (en) * 2005-06-06 2006-12-14 Mitsubishi Gas Chemical Company, Inc. Compound for resist and resist composition

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103415541A (en) * 2011-03-08 2013-11-27 Dic株式会社 Radically curable compound, cured product of same, and method for producing same
CN104822715A (en) * 2012-11-28 2015-08-05 Dic株式会社 Compound containing phenolic hydroxy group, composition containing phenolic hydroxy group, resin containing (meth)acryloyl group, curable composition and cured product thereof, and resist material
TWI602805B (en) * 2013-02-08 2017-10-21 三菱瓦斯化學股份有限公司 Novel allylic compound and method of producing the same
TWI693211B (en) * 2013-09-30 2020-05-11 日商東京應化工業股份有限公司 Method for manufacturing vinyl-containing compound
CN107848946A (en) * 2015-07-23 2018-03-27 三菱瓦斯化学株式会社 New (methyl) acryl compound and its manufacture method
CN107438596A (en) * 2016-04-12 2017-12-05 株式会社Lg化学 Compounds and organic electronic components containing them
CN107438596B (en) * 2016-04-12 2020-05-22 株式会社Lg化学 Compounds and organic electronic components containing the same

Also Published As

Publication number Publication date
JP4998261B2 (en) 2012-08-15
JPWO2006132139A1 (en) 2009-01-08
JP2012093784A (en) 2012-05-17
JP2012068652A (en) 2012-04-05
JP5110210B2 (en) 2012-12-26
WO2006132139A1 (en) 2006-12-14
JP5218682B2 (en) 2013-06-26
JP2012118551A (en) 2012-06-21
JP5182411B2 (en) 2013-04-17

Similar Documents

Publication Publication Date Title
TW200710567A (en) Resist compound and resist composition
TW200516349A (en) Photosensitive composition and pattern forming method using the same
ATE544094T1 (en) COMPOUND FOR USE IN A PHOTOSENSITIVE COMPOSITION
WO2007102979A3 (en) Radiation source
TW200710576A (en) Positive resist composition and method of pattern formation with the same
WO2007025525A3 (en) Light emitting module especially for use in an optical projection apparatus, and optical projection apparatus
TW200732866A (en) Binary sinusoidal sub-wavelength gratings as alignment marks
TW200517788A (en) Lithographic apparatus
WO2001042855A3 (en) Lithography device which uses a source of radiation in the extreme ultraviolet range and multi-layered mirrors with a broad spectral band in this range
EP1536285A3 (en) Photosensitive composition, compound for use in the photosensitive composition, and pattern forming method using the photosensitive composition
EP2270596A3 (en) Positive resist compostion and pattern forming process
EP1734032A4 (en) CALIXRESORCINARENE COMPOUNDS, PHOTORESIST BASE MATERIALS, AND COMPOSITIONS THEREOF
Aregahegn et al. Kinetics and mechanisms of aqueous-phase reactions of triplet-state imidazole-2-carboxaldehyde and 3, 4-dimethoxybenzaldehyde with α, β-unsaturated carbonyl compounds
EP1767991A3 (en) Positive resist composition and pattern forming method using the same
ATE331972T1 (en) ARRANGEMENT FOR CORRECTING LASER RADIATION FROM A LASER LIGHT SOURCE AND METHOD FOR PRODUCING THE ARRANGEMENT
TW200715065A (en) Exposure apparatus and exposure method, and method of manufacturing electrical wiring board
WO2009140270A3 (en) System and method for light source employing laser-produced plasma
TW200611080A (en) Method for forming pattern
BRPI0511138A (en) pyrimidine derivatives for the treatment of abnormal cell development
TW200725181A (en) Positive resist composition and pattern forming method using the same
EP1906238A3 (en) Photosensitive composition and pattern forming method using the same
Nickel et al. Light-induced photoisomerization of a diarylethene molecular switch on solid surfaces
TW200627087A (en) Methods and systems for lithographic beam generation
TW200632557A (en) Positive resist composition for immersion exposure and pattern-forming method using the same
ATE301169T1 (en) COMPOSITION CURABLE BY UV RADIATION