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TW200719579A - Linear High Electron Mobility Transistor (HEMT) power amplifier with active biasing circuit - Google Patents

Linear High Electron Mobility Transistor (HEMT) power amplifier with active biasing circuit

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Publication number
TW200719579A
TW200719579A TW094139143A TW94139143A TW200719579A TW 200719579 A TW200719579 A TW 200719579A TW 094139143 A TW094139143 A TW 094139143A TW 94139143 A TW94139143 A TW 94139143A TW 200719579 A TW200719579 A TW 200719579A
Authority
TW
Taiwan
Prior art keywords
hemt
power amplifier
biasing circuit
active biasing
electron mobility
Prior art date
Application number
TW094139143A
Other languages
Chinese (zh)
Other versions
TWI287350B (en
Inventor
Zheng-Han Cai
Tian-Wei Huang
Huei Wang
Original Assignee
Univ Nat Taiwan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Taiwan filed Critical Univ Nat Taiwan
Priority to TW94139143A priority Critical patent/TWI287350B/en
Publication of TW200719579A publication Critical patent/TW200719579A/en
Application granted granted Critical
Publication of TWI287350B publication Critical patent/TWI287350B/en

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  • Amplifiers (AREA)

Abstract

The present invention provides a linear High Electron Mobility Transistor (HEMT) power amplifier with an active biasing circuit. The input terminal of a HEMT is connected in parallel to an active biasing circuit with linearization effect. This active biasing circuit consist of a cold molding HEMT, a transistor biasing component connected to the cold molding HEMT, and a cold molding HEMT property adjustment component. Thus, the present invention provides a linear HEMT power amplifier with an active biasing circuit, which is capable of fulfilling power amplifier biasing and linearization functions without increasing the total chip area.
TW94139143A 2005-11-08 2005-11-08 Linear high electron mobility transistor (HEMT) power amplifier with active biasing circuit TWI287350B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94139143A TWI287350B (en) 2005-11-08 2005-11-08 Linear high electron mobility transistor (HEMT) power amplifier with active biasing circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94139143A TWI287350B (en) 2005-11-08 2005-11-08 Linear high electron mobility transistor (HEMT) power amplifier with active biasing circuit

Publications (2)

Publication Number Publication Date
TW200719579A true TW200719579A (en) 2007-05-16
TWI287350B TWI287350B (en) 2007-09-21

Family

ID=39460296

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94139143A TWI287350B (en) 2005-11-08 2005-11-08 Linear high electron mobility transistor (HEMT) power amplifier with active biasing circuit

Country Status (1)

Country Link
TW (1) TWI287350B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI830070B (en) * 2021-10-05 2024-01-21 立積電子股份有限公司 Power amplifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI830070B (en) * 2021-10-05 2024-01-21 立積電子股份有限公司 Power amplifier
US12244269B2 (en) 2021-10-05 2025-03-04 Richwave Technology Corp. Power amplifier

Also Published As

Publication number Publication date
TWI287350B (en) 2007-09-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees