TW200719400A - Method of removing a metal silicide layer on a gate electrode in a semiconductor manufacturing process and etching method - Google Patents
Method of removing a metal silicide layer on a gate electrode in a semiconductor manufacturing process and etching methodInfo
- Publication number
- TW200719400A TW200719400A TW094138422A TW94138422A TW200719400A TW 200719400 A TW200719400 A TW 200719400A TW 094138422 A TW094138422 A TW 094138422A TW 94138422 A TW94138422 A TW 94138422A TW 200719400 A TW200719400 A TW 200719400A
- Authority
- TW
- Taiwan
- Prior art keywords
- gate electrode
- metal silicide
- layer
- silicide layer
- semiconductor manufacturing
- Prior art date
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
A method of removing a metal silicide layer on a gate electrode in a semiconductor manufacturing process is disclosed, in which the gate electrode, a metal silicide layer, a spacer, a silicon nitride cap layer, and a dielectric layer have been formed. The method comprises performing a chemical mechanical polishing process to polish the dielectric layer using the silicon nitride cap layer as a polishing stop layer to expose the silicon nitride cap layer over the gate electrode; removing the exposed silicon nitride cap layer to expose the metal silicide layer; and performing a first etching process to remove the metal silicide layer on the gate electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW94138422A TWI289885B (en) | 2005-11-02 | 2005-11-02 | Method of removing a metal silicide layer on a gate electrode in a semiconductor manufacturing process and etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW94138422A TWI289885B (en) | 2005-11-02 | 2005-11-02 | Method of removing a metal silicide layer on a gate electrode in a semiconductor manufacturing process and etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200719400A true TW200719400A (en) | 2007-05-16 |
| TWI289885B TWI289885B (en) | 2007-11-11 |
Family
ID=39295778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW94138422A TWI289885B (en) | 2005-11-02 | 2005-11-02 | Method of removing a metal silicide layer on a gate electrode in a semiconductor manufacturing process and etching method |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI289885B (en) |
-
2005
- 2005-11-02 TW TW94138422A patent/TWI289885B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI289885B (en) | 2007-11-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |