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TW200719003A - Transflective pixel structure and fabricating method thereof - Google Patents

Transflective pixel structure and fabricating method thereof

Info

Publication number
TW200719003A
TW200719003A TW094139395A TW94139395A TW200719003A TW 200719003 A TW200719003 A TW 200719003A TW 094139395 A TW094139395 A TW 094139395A TW 94139395 A TW94139395 A TW 94139395A TW 200719003 A TW200719003 A TW 200719003A
Authority
TW
Taiwan
Prior art keywords
dielectric layer
active device
pixel structure
patterned dielectric
layer
Prior art date
Application number
TW094139395A
Other languages
Chinese (zh)
Other versions
TWI336412B (en
Inventor
Wei-Ya Wang
Hui-Fen Lin
Kuo-Yu Huang
Kun-Yu Lin
Original Assignee
Au Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW94139395A priority Critical patent/TWI336412B/en
Publication of TW200719003A publication Critical patent/TW200719003A/en
Application granted granted Critical
Publication of TWI336412B publication Critical patent/TWI336412B/en

Links

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)

Abstract

The fabricating method of a transflective pixel structure including the following steps is described. First, a substrate is provided. An active device is then formed on the substrate. Thereafter, a passivation layer is formed on the substrate to cover the active device. Then, a patterned dielectric layer is formed to cover a portion of the passivation layer. A patterned reflecting layer is formed on a portion of the patterned dielectric layer. Next, the passivation layer not covered by the patterned dielectric layer is removed by utilizing at least the patterned dielectric layer as a hard mask such that the active device is exposed. Ultimately, a pixel electrode electrically connected with the active device is formed on the patterned reflecting layer and the patterned dielectric layer. The cycle time and manufacturing cost of the transflective pixel structure mentioned above are reduced.
TW94139395A 2005-11-10 2005-11-10 Transflective pixel structure and fabricating method thereof TWI336412B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94139395A TWI336412B (en) 2005-11-10 2005-11-10 Transflective pixel structure and fabricating method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94139395A TWI336412B (en) 2005-11-10 2005-11-10 Transflective pixel structure and fabricating method thereof

Publications (2)

Publication Number Publication Date
TW200719003A true TW200719003A (en) 2007-05-16
TWI336412B TWI336412B (en) 2011-01-21

Family

ID=45075069

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94139395A TWI336412B (en) 2005-11-10 2005-11-10 Transflective pixel structure and fabricating method thereof

Country Status (1)

Country Link
TW (1) TWI336412B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7755725B2 (en) 2007-09-26 2010-07-13 Au Optronics Corp. Transflective liquid crystal display panel
TWI408475B (en) * 2009-12-31 2013-09-11 Au Optronics Corp Active device array substrate and fabricating mothod thereof
TWI483036B (en) * 2012-11-19 2015-05-01 友達光電股份有限公司 Array substrate and manufacturing method thereof
TWI493631B (en) * 2012-05-31 2015-07-21 Au Optronics Corp Semiconductor device and manufacturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7755725B2 (en) 2007-09-26 2010-07-13 Au Optronics Corp. Transflective liquid crystal display panel
TWI408475B (en) * 2009-12-31 2013-09-11 Au Optronics Corp Active device array substrate and fabricating mothod thereof
TWI493631B (en) * 2012-05-31 2015-07-21 Au Optronics Corp Semiconductor device and manufacturing method thereof
TWI483036B (en) * 2012-11-19 2015-05-01 友達光電股份有限公司 Array substrate and manufacturing method thereof

Also Published As

Publication number Publication date
TWI336412B (en) 2011-01-21

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees