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TW200703905A - Logical circuit and single electron spin transistor - Google Patents

Logical circuit and single electron spin transistor

Info

Publication number
TW200703905A
TW200703905A TW095104560A TW95104560A TW200703905A TW 200703905 A TW200703905 A TW 200703905A TW 095104560 A TW095104560 A TW 095104560A TW 95104560 A TW95104560 A TW 95104560A TW 200703905 A TW200703905 A TW 200703905A
Authority
TW
Taiwan
Prior art keywords
electron spin
single electron
spin transistor
logical circuit
drain
Prior art date
Application number
TW095104560A
Other languages
English (en)
Inventor
Masaaki Tanaka
Satoshi Sugahara
Nam-Hai Pham
Original Assignee
Japan Science & Tech Agency
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science & Tech Agency filed Critical Japan Science & Tech Agency
Publication of TW200703905A publication Critical patent/TW200703905A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/385—Devices using spin-polarised carriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/402—Single electron transistors; Coulomb blockade transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Logic Circuits (AREA)
TW095104560A 2005-03-24 2006-02-10 Logical circuit and single electron spin transistor TW200703905A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005085260 2005-03-24

Publications (1)

Publication Number Publication Date
TW200703905A true TW200703905A (en) 2007-01-16

Family

ID=37023522

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095104560A TW200703905A (en) 2005-03-24 2006-02-10 Logical circuit and single electron spin transistor

Country Status (4)

Country Link
US (1) US7851877B2 (zh)
JP (1) JP4574674B2 (zh)
TW (1) TW200703905A (zh)
WO (1) WO2006100835A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117949799A (zh) * 2024-03-22 2024-04-30 吕梁学院 基于门电压测定有机自旋电子件性能的方法及测定系统

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5072392B2 (ja) * 2007-03-08 2012-11-14 株式会社東芝 縦型スピントランジスタ及びその製造方法
US7936028B2 (en) * 2007-11-09 2011-05-03 Samsung Electronics Co., Ltd. Spin field effect transistor using half metal and method of manufacturing the same
JP5231029B2 (ja) * 2008-01-22 2013-07-10 株式会社日立製作所 磁気論理素子
KR101598542B1 (ko) * 2009-01-13 2016-02-29 삼성전자주식회사 스핀 전계효과 트랜지스터를 이용한 논리소자
JP4908540B2 (ja) 2009-03-25 2012-04-04 株式会社東芝 スピンｍｏｓｆｅｔおよびリコンフィギャラブルロジック回路
JP5603049B2 (ja) * 2009-10-28 2014-10-08 国立大学法人東北大学 電子回路
JP5695451B2 (ja) * 2011-03-04 2015-04-08 株式会社東芝 磁気メモリ及び磁気メモリ装置
JP5665711B2 (ja) * 2011-09-26 2015-02-04 株式会社東芝 スピントランジスタおよびメモリ
US9076953B2 (en) 2012-05-09 2015-07-07 Qualcomm Incorporated Spin transistors employing a piezoelectric layer and related memory, memory systems, and methods
CN106449739B (zh) * 2016-10-19 2023-09-12 中国人民解放军国防科学技术大学 基于量子点的单电子自旋过滤器及单电子自旋过滤方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5838021A (en) * 1995-12-26 1998-11-17 Ancona; Mario G. Single electron digital circuits
JP3258241B2 (ja) * 1996-09-30 2002-02-18 株式会社東芝 単一電子制御磁気抵抗素子
JPH11168205A (ja) 1997-12-04 1999-06-22 Nippon Telegr & Teleph Corp <Ntt> クーロンブロッケイド型論理素子及びその製造方法
JP3134990B2 (ja) * 1998-03-09 2001-02-13 日本電気株式会社 電流制御機能素子
JP4049988B2 (ja) * 2000-11-24 2008-02-20 株式会社東芝 論理回路
FR2830686B1 (fr) * 2001-10-04 2004-10-22 Commissariat Energie Atomique Transistor a un electron et a canal vertical, et procedes de realisation d'un tel transistor
JP2004281548A (ja) 2003-03-13 2004-10-07 Japan Science & Technology Agency 強磁性単電子素子とこれを用いた記憶素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117949799A (zh) * 2024-03-22 2024-04-30 吕梁学院 基于门电压测定有机自旋电子件性能的方法及测定系统
CN117949799B (zh) * 2024-03-22 2024-06-11 吕梁学院 基于门电压测定有机自旋电子件性能的方法及测定系统

Also Published As

Publication number Publication date
US20090039401A1 (en) 2009-02-12
US7851877B2 (en) 2010-12-14
WO2006100835A1 (ja) 2006-09-28
JPWO2006100835A1 (ja) 2008-08-28
JP4574674B2 (ja) 2010-11-04

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