TW200703626A - Composition for forming paraelectric thin film, paraelectric thin film and dielectric memory - Google Patents
Composition for forming paraelectric thin film, paraelectric thin film and dielectric memoryInfo
- Publication number
- TW200703626A TW200703626A TW095124714A TW95124714A TW200703626A TW 200703626 A TW200703626 A TW 200703626A TW 095124714 A TW095124714 A TW 095124714A TW 95124714 A TW95124714 A TW 95124714A TW 200703626 A TW200703626 A TW 200703626A
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- composition
- forming
- paraelectric
- paraelectric thin
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G1/00—Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
- C01G1/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/003—Titanates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
- C01G25/006—Compounds containing zirconium, with or without oxygen or hydrogen, and containing two or more other elements
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G29/00—Compounds of bismuth
- C01G29/006—Compounds containing bismuth, with or without oxygen or hydrogen, and containing two or more other elements
-
- H10P14/6342—
-
- H10P14/69398—
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Inorganic Insulating Materials (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005202167 | 2005-07-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200703626A true TW200703626A (en) | 2007-01-16 |
Family
ID=37636957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095124714A TW200703626A (en) | 2005-07-11 | 2006-07-06 | Composition for forming paraelectric thin film, paraelectric thin film and dielectric memory |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TW200703626A (zh) |
| WO (1) | WO2007007561A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116332628A (zh) * | 2023-02-24 | 2023-06-27 | 齐鲁工业大学(山东省科学院) | 一种低介电常数硼酸盐微波介质陶瓷及制备方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011078398A1 (en) | 2009-12-25 | 2011-06-30 | Ricoh Company, Ltd. | Field-effect transistor, semiconductor memory, display element, image display device, and system |
| JP5899615B2 (ja) * | 2010-03-18 | 2016-04-06 | 株式会社リコー | 絶縁膜の製造方法及び半導体装置の製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3989414B2 (ja) * | 2003-06-30 | 2007-10-10 | 沖電気工業株式会社 | 強誘電体キャパシタ、強誘電体キャパシタを具える半導体装置、強誘電体キャパシタの製造方法及び半導体装置の製造方法 |
| JP4603254B2 (ja) * | 2003-10-23 | 2010-12-22 | 日本曹達株式会社 | 金属酸化物ゾル液の製造方法、結晶質金属複酸化物ゾルおよび金属酸化物膜 |
-
2006
- 2006-06-29 WO PCT/JP2006/313029 patent/WO2007007561A1/ja not_active Ceased
- 2006-07-06 TW TW095124714A patent/TW200703626A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116332628A (zh) * | 2023-02-24 | 2023-06-27 | 齐鲁工业大学(山东省科学院) | 一种低介电常数硼酸盐微波介质陶瓷及制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007007561A1 (ja) | 2007-01-18 |
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