TW200703479A - Display device and manufacturing method thereof - Google Patents
Display device and manufacturing method thereofInfo
- Publication number
- TW200703479A TW200703479A TW095134316A TW95134316A TW200703479A TW 200703479 A TW200703479 A TW 200703479A TW 095134316 A TW095134316 A TW 095134316A TW 95134316 A TW95134316 A TW 95134316A TW 200703479 A TW200703479 A TW 200703479A
- Authority
- TW
- Taiwan
- Prior art keywords
- display device
- wiring
- manufacturing
- trouble
- liquid crystal
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H10W20/425—
-
- H10W72/00—
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002276295 | 2002-09-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200703479A true TW200703479A (en) | 2007-01-16 |
| TWI357616B TWI357616B (en) | 2012-02-01 |
Family
ID=31987023
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099134880A TWI338366B (en) | 2002-09-20 | 2003-09-19 | Display device and manufacturing method thereof |
| TW095134316A TWI357616B (en) | 2002-09-20 | 2003-09-19 | Display device and manufacturing method thereof |
| TW092126012A TWI338346B (en) | 2002-09-20 | 2003-09-19 | Display device and manufacturing method thereof |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099134880A TWI338366B (en) | 2002-09-20 | 2003-09-19 | Display device and manufacturing method thereof |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092126012A TWI338346B (en) | 2002-09-20 | 2003-09-19 | Display device and manufacturing method thereof |
Country Status (5)
| Country | Link |
|---|---|
| US (10) | US7102231B2 (zh) |
| CN (1) | CN100578573C (zh) |
| AU (1) | AU2003264515A1 (zh) |
| TW (3) | TWI338366B (zh) |
| WO (1) | WO2004027740A1 (zh) |
Families Citing this family (35)
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| US6509616B2 (en) * | 2000-09-29 | 2003-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
| US6965124B2 (en) * | 2000-12-12 | 2005-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method of fabricating the same |
| WO2004027740A1 (en) | 2002-09-20 | 2004-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US7094684B2 (en) * | 2002-09-20 | 2006-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| IL156945A0 (en) * | 2003-07-15 | 2004-02-08 | Itzhak Tavori | Device and a method for orthopedic delivery of bone reconstruction medium |
| KR100696471B1 (ko) * | 2004-07-02 | 2007-03-19 | 삼성에스디아이 주식회사 | 전자 발광 소자 |
| JP2006060191A (ja) * | 2004-07-23 | 2006-03-02 | Seiko Epson Corp | 薄膜半導体装置及びその製造方法、電気光学装置、電子機器 |
| US8395746B2 (en) | 2006-01-31 | 2013-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US20070194450A1 (en) * | 2006-02-21 | 2007-08-23 | Tyberg Christy S | BEOL compatible FET structure |
| JP5268104B2 (ja) * | 2006-06-22 | 2013-08-21 | 国立大学法人北見工業大学 | 窒化金属膜、酸化金属膜、炭化金属膜またはその複合膜の製造方法、およびその製造装置 |
| TWI312578B (en) * | 2006-09-29 | 2009-07-21 | Innolux Display Corp | Thin film transistor substrate |
| US20080254613A1 (en) * | 2007-04-10 | 2008-10-16 | Applied Materials, Inc. | Methods for forming metal interconnect structure for thin film transistor applications |
| US20090184425A1 (en) * | 2008-01-17 | 2009-07-23 | Advanced Chip Engineering Technology Inc. | Conductive line structure and the method of forming the same |
| CN101494201B (zh) * | 2008-01-25 | 2010-11-03 | 北京京东方光电科技有限公司 | 薄膜晶体管液晶显示器阵列基板结构及其制造方法 |
| US8224277B2 (en) * | 2008-09-26 | 2012-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101761108B1 (ko) * | 2008-10-03 | 2017-07-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN102598278B (zh) * | 2009-10-09 | 2015-04-08 | 株式会社半导体能源研究所 | 半导体器件 |
| US8586472B2 (en) * | 2010-07-14 | 2013-11-19 | Infineon Technologies Ag | Conductive lines and pads and method of manufacturing thereof |
| JP5626010B2 (ja) | 2011-02-25 | 2014-11-19 | 富士通株式会社 | 半導体装置及びその製造方法、電源装置 |
| US8658444B2 (en) | 2012-05-16 | 2014-02-25 | International Business Machines Corporation | Semiconductor active matrix on buried insulator |
| US20140110838A1 (en) * | 2012-10-22 | 2014-04-24 | Infineon Technologies Ag | Semiconductor devices and processing methods |
| TWI627483B (zh) | 2012-11-28 | 2018-06-21 | 半導體能源研究所股份有限公司 | 顯示裝置及電視接收機 |
| CN103208491B (zh) * | 2013-02-25 | 2015-12-02 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
| KR102337889B1 (ko) * | 2015-02-16 | 2021-12-10 | 삼성디스플레이 주식회사 | 표시 장치 |
| CN105742364A (zh) * | 2016-04-12 | 2016-07-06 | 中山大学 | 一种抑制有源沟道区光致漏电流产生的mos管及应用 |
| CN107565041B (zh) * | 2016-06-30 | 2019-12-31 | 乐金显示有限公司 | 有机发光显示装置及其制造方法 |
| CN106129092A (zh) * | 2016-07-26 | 2016-11-16 | 昆山工研院新型平板显示技术中心有限公司 | 一种显示屏的边框及其制备方法、显示屏 |
| JP2018021994A (ja) * | 2016-08-02 | 2018-02-08 | 株式会社ジャパンディスプレイ | 表示装置およびその製造方法 |
| US10181441B2 (en) * | 2016-11-18 | 2019-01-15 | Taiwan Semiconductor Manufacturing Company Ltd. | Through via structure and manufacturing method thereof |
| JP6797042B2 (ja) * | 2017-02-02 | 2020-12-09 | 株式会社ジャパンディスプレイ | 表示装置 |
| CN107393830A (zh) * | 2017-07-21 | 2017-11-24 | 京东方科技集团股份有限公司 | 薄膜晶体管的制备方法 |
| CN107403827B (zh) * | 2017-07-25 | 2020-12-29 | 京东方科技集团股份有限公司 | 显示基板和显示装置 |
| TWI710122B (zh) * | 2019-01-17 | 2020-11-11 | 友達光電股份有限公司 | 畫素結構及其製造方法 |
| KR102829217B1 (ko) | 2020-03-03 | 2025-07-04 | 삼성전자주식회사 | 측면 배선이 형성된 글라스 기판을 구비한 디스플레이 모듈 및 디스플레이 모듈 제조 방법 |
| TWI772015B (zh) * | 2021-05-05 | 2022-07-21 | 友達光電股份有限公司 | 畫素結構及其製作方法 |
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- 2003-09-19 WO PCT/JP2003/011977 patent/WO2004027740A1/en not_active Ceased
- 2003-09-19 TW TW099134880A patent/TWI338366B/zh not_active IP Right Cessation
- 2003-09-19 TW TW095134316A patent/TWI357616B/zh not_active IP Right Cessation
- 2003-09-19 TW TW092126012A patent/TWI338346B/zh not_active IP Right Cessation
- 2003-09-19 AU AU2003264515A patent/AU2003264515A1/en not_active Abandoned
- 2003-09-19 CN CN03822346A patent/CN100578573C/zh not_active Expired - Fee Related
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|---|---|
| US8450851B2 (en) | 2013-05-28 |
| US20180108725A1 (en) | 2018-04-19 |
| US9622345B2 (en) | 2017-04-11 |
| US20140299991A1 (en) | 2014-10-09 |
| TW201108409A (en) | 2011-03-01 |
| TW200409289A (en) | 2004-06-01 |
| TWI338366B (en) | 2011-03-01 |
| US20040056855A1 (en) | 2004-03-25 |
| US20170207292A1 (en) | 2017-07-20 |
| CN100578573C (zh) | 2010-01-06 |
| US10090373B2 (en) | 2018-10-02 |
| US20110140134A1 (en) | 2011-06-16 |
| US9847386B2 (en) | 2017-12-19 |
| TWI338346B (en) | 2011-03-01 |
| TWI357616B (en) | 2012-02-01 |
| US20100276695A1 (en) | 2010-11-04 |
| US9082768B2 (en) | 2015-07-14 |
| US20150313014A1 (en) | 2015-10-29 |
| US7781772B2 (en) | 2010-08-24 |
| AU2003264515A1 (en) | 2004-04-08 |
| US20080315205A1 (en) | 2008-12-25 |
| US7102231B2 (en) | 2006-09-05 |
| US20060289889A1 (en) | 2006-12-28 |
| US7417256B2 (en) | 2008-08-26 |
| US20130256892A1 (en) | 2013-10-03 |
| US7897973B2 (en) | 2011-03-01 |
| WO2004027740A1 (en) | 2004-04-01 |
| US8749061B2 (en) | 2014-06-10 |
| CN1682259A (zh) | 2005-10-12 |
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