TW200700720A - Field effect transistor type hydrogen sensor - Google Patents
Field effect transistor type hydrogen sensorInfo
- Publication number
- TW200700720A TW200700720A TW094122057A TW94122057A TW200700720A TW 200700720 A TW200700720 A TW 200700720A TW 094122057 A TW094122057 A TW 094122057A TW 94122057 A TW94122057 A TW 94122057A TW 200700720 A TW200700720 A TW 200700720A
- Authority
- TW
- Taiwan
- Prior art keywords
- field effect
- effect transistor
- transistor type
- hydrogen sensor
- type hydrogen
- Prior art date
Links
- 229910052739 hydrogen Inorganic materials 0.000 title abstract 5
- 239000001257 hydrogen Substances 0.000 title abstract 5
- 230000005669 field effect Effects 0.000 title abstract 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 title 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 150000002431 hydrogen Chemical class 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910000990 Ni alloy Inorganic materials 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 230000007613 environmental effect Effects 0.000 abstract 1
Landscapes
- Junction Field-Effect Transistors (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
This invention provides a field effect transistor type hydrogen sensor, comprising a substrate unit made from a semiconductor material, an electron flowing unit formed on the substrate unit with a semiconductor material for electrons to flow, and an electric control output unit made from a Schottky contact layer and an electrode electrically connected with the Schottky contact layer. The electrode comprises a gate terminal made from Pd, and a source terminal and a drain terminal made from Au-Ge-Ni alloy. When hydrogen comes into contact with the gate terminal, the electricity of the gate terminal is changed, so as to regulate electron flowing density in the electron flowing unit, thereby changing the current-voltage characteristics of the field effect transistor type hydrogen sensor, and thus sensing the environmental hydrogen concentration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW94122057A TWI269034B (en) | 2005-06-30 | 2005-06-30 | Field effect transistor type hydrogen sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW94122057A TWI269034B (en) | 2005-06-30 | 2005-06-30 | Field effect transistor type hydrogen sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI269034B TWI269034B (en) | 2006-12-21 |
| TW200700720A true TW200700720A (en) | 2007-01-01 |
Family
ID=38291431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW94122057A TWI269034B (en) | 2005-06-30 | 2005-06-30 | Field effect transistor type hydrogen sensor |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI269034B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI740325B (en) * | 2018-12-28 | 2021-09-21 | 鴻海精密工業股份有限公司 | Gas sensor and method for making same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290445B (en) * | 2011-05-20 | 2015-08-26 | 刘文超 | Transistor component and manufacture method thereof |
-
2005
- 2005-06-30 TW TW94122057A patent/TWI269034B/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI740325B (en) * | 2018-12-28 | 2021-09-21 | 鴻海精密工業股份有限公司 | Gas sensor and method for making same |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI269034B (en) | 2006-12-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |