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TW200700584A - Etching apparatus and etching process - Google Patents

Etching apparatus and etching process

Info

Publication number
TW200700584A
TW200700584A TW094122059A TW94122059A TW200700584A TW 200700584 A TW200700584 A TW 200700584A TW 094122059 A TW094122059 A TW 094122059A TW 94122059 A TW94122059 A TW 94122059A TW 200700584 A TW200700584 A TW 200700584A
Authority
TW
Taiwan
Prior art keywords
tank
etching
temperature
hydrogen peroxide
ammonium hydroxide
Prior art date
Application number
TW094122059A
Other languages
Chinese (zh)
Other versions
TWI255864B (en
Inventor
Wei-Jen Tai
Chuan-Yi Wu
Mei-Kuei Tseng
Ming-Tan Hsu
Original Assignee
Chunghwa Picture Tubes Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chunghwa Picture Tubes Ltd filed Critical Chunghwa Picture Tubes Ltd
Priority to TW094122059A priority Critical patent/TWI255864B/en
Priority to US11/308,830 priority patent/US20070000609A1/en
Application granted granted Critical
Publication of TWI255864B publication Critical patent/TWI255864B/en
Publication of TW200700584A publication Critical patent/TW200700584A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/34—Alkaline compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

An etching apparatus, for etching copper or silver, which includes a hydrogen peroxide tank, an ammonium hydroxide tank, a water tank, an etching tank, a piping system and a temperature control device, is provided. The piping system connects the hydrogen peroxide tank, the ammonium hydroxide tank, the water tank to the etching tank, and the temperature control device is disposed around the hydrogen peroxide tank, the ammonium hydroxide tank and the etching tank to maintain the temperatures of them below the room temperature and above 12 degree centigrade. An etching process is also provided. First, hydrogen peroxide and ammonium hydroxide having a temperature in a temperature-range below the room temperature and above 12 degree centigrade, is provided. Then, water, hydrogen peroxide and ammonium hydroxide are mixed to be an etchant and the etchant also has a temperature maintained in said temperature temperature-range. Next, the etchant is utilized for etching copper or silver.
TW094122059A 2005-06-30 2005-06-30 Etching apparatus and etching process TWI255864B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW094122059A TWI255864B (en) 2005-06-30 2005-06-30 Etching apparatus and etching process
US11/308,830 US20070000609A1 (en) 2005-06-30 2006-05-12 Etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094122059A TWI255864B (en) 2005-06-30 2005-06-30 Etching apparatus and etching process

Publications (2)

Publication Number Publication Date
TWI255864B TWI255864B (en) 2006-06-01
TW200700584A true TW200700584A (en) 2007-01-01

Family

ID=37588105

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094122059A TWI255864B (en) 2005-06-30 2005-06-30 Etching apparatus and etching process

Country Status (2)

Country Link
US (1) US20070000609A1 (en)
TW (1) TWI255864B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102468776B1 (en) * 2015-09-21 2022-11-22 삼성전자주식회사 Composition for wet Etching of polysilicon and method for manufacturing semiconductor device using the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69429347T2 (en) * 1994-09-20 2002-08-14 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania System for the controlled cooling of chemical containers
WO2001002106A1 (en) * 1999-07-06 2001-01-11 Semitool, Inc. Chemical solutions system for processing semiconductor materials
JP2003234320A (en) * 2002-02-06 2003-08-22 Nec Electronics Corp Substrate cleaning method, cleaning solution, cleaning device, and semiconductor device

Also Published As

Publication number Publication date
US20070000609A1 (en) 2007-01-04
TWI255864B (en) 2006-06-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees