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TW200707104A - Negative resist composition and resist pattern formation method - Google Patents

Negative resist composition and resist pattern formation method

Info

Publication number
TW200707104A
TW200707104A TW095115321A TW95115321A TW200707104A TW 200707104 A TW200707104 A TW 200707104A TW 095115321 A TW095115321 A TW 095115321A TW 95115321 A TW95115321 A TW 95115321A TW 200707104 A TW200707104 A TW 200707104A
Authority
TW
Taiwan
Prior art keywords
line
negative resist
resist composition
electron beam
excimer laser
Prior art date
Application number
TW095115321A
Other languages
English (en)
Inventor
Hiroshi Shimbori
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005138327A external-priority patent/JP4823562B2/ja
Priority claimed from JP2005138326A external-priority patent/JP2006317583A/ja
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200707104A publication Critical patent/TW200707104A/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW095115321A 2005-05-11 2006-04-28 Negative resist composition and resist pattern formation method TW200707104A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005138327A JP4823562B2 (ja) 2005-05-11 2005-05-11 レジストパターン形成方法
JP2005138326A JP2006317583A (ja) 2005-05-11 2005-05-11 MEMS(MicroElectroMechanicalSystems)を製造するためのネガ型レジスト組成物およびレジストパターン形成方法

Publications (1)

Publication Number Publication Date
TW200707104A true TW200707104A (en) 2007-02-16

Family

ID=37396358

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095115321A TW200707104A (en) 2005-05-11 2006-04-28 Negative resist composition and resist pattern formation method

Country Status (4)

Country Link
US (1) US20090081590A1 (zh)
KR (1) KR20080008354A (zh)
TW (1) TW200707104A (zh)
WO (1) WO2006120845A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4767596B2 (ja) * 2005-06-20 2011-09-07 東京応化工業株式会社 ネガ型レジスト組成物およびレジストパターン形成方法
KR101596911B1 (ko) * 2009-01-22 2016-02-23 주식회사 동진쎄미켐 포토레지스트 조성물
JP5723854B2 (ja) * 2011-12-28 2015-05-27 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、それを用いた感活性光線性又は感放射線性膜及びパターン形成方法
KR102138141B1 (ko) * 2013-02-19 2020-07-27 제이에스알 가부시끼가이샤 네거티브형 감방사선성 수지 조성물, 경화막, 경화막의 형성 방법 및 표시 소자
TWI485520B (zh) * 2013-06-11 2015-05-21 Chi Mei Corp 負型感光性樹脂組成物及其應用
US11762294B2 (en) 2020-08-31 2023-09-19 Rohm And Haas Electronic Materials Llc Coating composition for photoresist underlayer
US20220066321A1 (en) * 2020-08-31 2022-03-03 Rohm And Haas Electronic Materials Llc Underlayer compositions and patterning methods

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0571330B1 (de) * 1992-05-22 1999-04-07 Ciba SC Holding AG Hochauflösender I-Linien Photoresist mit höherer Empfindlichkeit
JP2547944B2 (ja) * 1992-09-30 1996-10-30 インターナショナル・ビジネス・マシーンズ・コーポレイション 二層レジスト組成物を使用する光学リソグラフによりサブ−ハーフミクロンパターンを形成する方法
JPH097924A (ja) * 1995-06-21 1997-01-10 Nec Corp 半導体装置の製造装置及び半導体装置の製造方法
JPH10242038A (ja) * 1997-02-28 1998-09-11 Toshiba Corp パターン形成方法とリソグラフィシステム
JP3496916B2 (ja) * 1997-06-19 2004-02-16 東京応化工業株式会社 電子線用ネガ型レジスト組成物
TW550439B (en) * 1997-07-01 2003-09-01 Ciba Sc Holding Ag New oxime sulfonates as latent acids and compositions and photoresists comprising said oxime sulfonates
US6044724A (en) * 1999-04-15 2000-04-04 Timms; Earl E. Drivetrain locking gear
JP4132642B2 (ja) * 1999-11-15 2008-08-13 東京応化工業株式会社 ネガ型レジスト基材及びそれを用いたイオン注入基板の製造方法
US6399275B1 (en) * 1999-11-15 2002-06-04 Tokyo Ohka Kogyo Co., Ltd. Negative-working photolithographic patterning material and method for the preparation of ion-implanted and metal-plated substrates by using the same
US6576394B1 (en) * 2000-06-16 2003-06-10 Clariant Finance (Bvi) Limited Negative-acting chemically amplified photoresist composition
JP2002110536A (ja) * 2000-10-05 2002-04-12 Tdk Corp レジストパターン、レジストパターンの作製方法、薄膜のパターニング方法、及びマイクロデバイスの製造方法
AU2002227945A1 (en) * 2000-12-04 2002-06-18 Ciba Specialty Chemicals Holding Inc. Onium salts and the use therof as latent acids
JP4458703B2 (ja) * 2001-03-16 2010-04-28 株式会社東芝 磁気抵抗効果素子、その製造方法、磁気ランダムアクセスメモリ、携帯端末装置、磁気ヘッド及び磁気再生装置
JP4951827B2 (ja) * 2001-08-17 2012-06-13 Jsr株式会社 スルホニル構造を有する化合物、それを用いた感放射線性酸発生剤、ポジ型感放射線性樹脂組成物、及びネガ型感放射線性樹脂組成物
JP4939703B2 (ja) * 2001-08-21 2012-05-30 オリンパス株式会社 走査型レーザー顕微鏡
JP3568925B2 (ja) * 2001-10-30 2004-09-22 Tdk株式会社 磁気抵抗効果素子の製造方法および薄膜磁気ヘッドの製造方法ならびに薄膜パターン形成方法
JP3822101B2 (ja) * 2001-12-26 2006-09-13 株式会社ルネサステクノロジ 感放射線組成物及びパタン形成方法及び半導体装置の製造方法

Also Published As

Publication number Publication date
WO2006120845A1 (ja) 2006-11-16
US20090081590A1 (en) 2009-03-26
KR20080008354A (ko) 2008-01-23

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