TW200707104A - Negative resist composition and resist pattern formation method - Google Patents
Negative resist composition and resist pattern formation methodInfo
- Publication number
- TW200707104A TW200707104A TW095115321A TW95115321A TW200707104A TW 200707104 A TW200707104 A TW 200707104A TW 095115321 A TW095115321 A TW 095115321A TW 95115321 A TW95115321 A TW 95115321A TW 200707104 A TW200707104 A TW 200707104A
- Authority
- TW
- Taiwan
- Prior art keywords
- line
- negative resist
- resist composition
- electron beam
- excimer laser
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 4
- 230000007261 regionalization Effects 0.000 title 1
- 239000002253 acid Substances 0.000 abstract 4
- 238000010894 electron beam technology Methods 0.000 abstract 4
- 239000003431 cross linking reagent Substances 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- 238000007747 plating Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005138327A JP4823562B2 (ja) | 2005-05-11 | 2005-05-11 | レジストパターン形成方法 |
| JP2005138326A JP2006317583A (ja) | 2005-05-11 | 2005-05-11 | MEMS(MicroElectroMechanicalSystems)を製造するためのネガ型レジスト組成物およびレジストパターン形成方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200707104A true TW200707104A (en) | 2007-02-16 |
Family
ID=37396358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095115321A TW200707104A (en) | 2005-05-11 | 2006-04-28 | Negative resist composition and resist pattern formation method |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20090081590A1 (zh) |
| KR (1) | KR20080008354A (zh) |
| TW (1) | TW200707104A (zh) |
| WO (1) | WO2006120845A1 (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4767596B2 (ja) * | 2005-06-20 | 2011-09-07 | 東京応化工業株式会社 | ネガ型レジスト組成物およびレジストパターン形成方法 |
| KR101596911B1 (ko) * | 2009-01-22 | 2016-02-23 | 주식회사 동진쎄미켐 | 포토레지스트 조성물 |
| JP5723854B2 (ja) * | 2011-12-28 | 2015-05-27 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、並びに、それを用いた感活性光線性又は感放射線性膜及びパターン形成方法 |
| KR102138141B1 (ko) * | 2013-02-19 | 2020-07-27 | 제이에스알 가부시끼가이샤 | 네거티브형 감방사선성 수지 조성물, 경화막, 경화막의 형성 방법 및 표시 소자 |
| TWI485520B (zh) * | 2013-06-11 | 2015-05-21 | Chi Mei Corp | 負型感光性樹脂組成物及其應用 |
| US11762294B2 (en) | 2020-08-31 | 2023-09-19 | Rohm And Haas Electronic Materials Llc | Coating composition for photoresist underlayer |
| US20220066321A1 (en) * | 2020-08-31 | 2022-03-03 | Rohm And Haas Electronic Materials Llc | Underlayer compositions and patterning methods |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0571330B1 (de) * | 1992-05-22 | 1999-04-07 | Ciba SC Holding AG | Hochauflösender I-Linien Photoresist mit höherer Empfindlichkeit |
| JP2547944B2 (ja) * | 1992-09-30 | 1996-10-30 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 二層レジスト組成物を使用する光学リソグラフによりサブ−ハーフミクロンパターンを形成する方法 |
| JPH097924A (ja) * | 1995-06-21 | 1997-01-10 | Nec Corp | 半導体装置の製造装置及び半導体装置の製造方法 |
| JPH10242038A (ja) * | 1997-02-28 | 1998-09-11 | Toshiba Corp | パターン形成方法とリソグラフィシステム |
| JP3496916B2 (ja) * | 1997-06-19 | 2004-02-16 | 東京応化工業株式会社 | 電子線用ネガ型レジスト組成物 |
| TW550439B (en) * | 1997-07-01 | 2003-09-01 | Ciba Sc Holding Ag | New oxime sulfonates as latent acids and compositions and photoresists comprising said oxime sulfonates |
| US6044724A (en) * | 1999-04-15 | 2000-04-04 | Timms; Earl E. | Drivetrain locking gear |
| JP4132642B2 (ja) * | 1999-11-15 | 2008-08-13 | 東京応化工業株式会社 | ネガ型レジスト基材及びそれを用いたイオン注入基板の製造方法 |
| US6399275B1 (en) * | 1999-11-15 | 2002-06-04 | Tokyo Ohka Kogyo Co., Ltd. | Negative-working photolithographic patterning material and method for the preparation of ion-implanted and metal-plated substrates by using the same |
| US6576394B1 (en) * | 2000-06-16 | 2003-06-10 | Clariant Finance (Bvi) Limited | Negative-acting chemically amplified photoresist composition |
| JP2002110536A (ja) * | 2000-10-05 | 2002-04-12 | Tdk Corp | レジストパターン、レジストパターンの作製方法、薄膜のパターニング方法、及びマイクロデバイスの製造方法 |
| AU2002227945A1 (en) * | 2000-12-04 | 2002-06-18 | Ciba Specialty Chemicals Holding Inc. | Onium salts and the use therof as latent acids |
| JP4458703B2 (ja) * | 2001-03-16 | 2010-04-28 | 株式会社東芝 | 磁気抵抗効果素子、その製造方法、磁気ランダムアクセスメモリ、携帯端末装置、磁気ヘッド及び磁気再生装置 |
| JP4951827B2 (ja) * | 2001-08-17 | 2012-06-13 | Jsr株式会社 | スルホニル構造を有する化合物、それを用いた感放射線性酸発生剤、ポジ型感放射線性樹脂組成物、及びネガ型感放射線性樹脂組成物 |
| JP4939703B2 (ja) * | 2001-08-21 | 2012-05-30 | オリンパス株式会社 | 走査型レーザー顕微鏡 |
| JP3568925B2 (ja) * | 2001-10-30 | 2004-09-22 | Tdk株式会社 | 磁気抵抗効果素子の製造方法および薄膜磁気ヘッドの製造方法ならびに薄膜パターン形成方法 |
| JP3822101B2 (ja) * | 2001-12-26 | 2006-09-13 | 株式会社ルネサステクノロジ | 感放射線組成物及びパタン形成方法及び半導体装置の製造方法 |
-
2006
- 2006-04-18 US US11/914,123 patent/US20090081590A1/en not_active Abandoned
- 2006-04-18 WO PCT/JP2006/308130 patent/WO2006120845A1/ja not_active Ceased
- 2006-04-18 KR KR1020077026313A patent/KR20080008354A/ko not_active Ceased
- 2006-04-28 TW TW095115321A patent/TW200707104A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2006120845A1 (ja) | 2006-11-16 |
| US20090081590A1 (en) | 2009-03-26 |
| KR20080008354A (ko) | 2008-01-23 |
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