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TW200642037A - Semiconductor device and fabricating method thereof - Google Patents

Semiconductor device and fabricating method thereof

Info

Publication number
TW200642037A
TW200642037A TW094117398A TW94117398A TW200642037A TW 200642037 A TW200642037 A TW 200642037A TW 094117398 A TW094117398 A TW 094117398A TW 94117398 A TW94117398 A TW 94117398A TW 200642037 A TW200642037 A TW 200642037A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
pmos
tensile stress
dielectric layer
fabricating method
Prior art date
Application number
TW094117398A
Other languages
Chinese (zh)
Other versions
TWI248166B (en
Inventor
Neng-Kuo Chen
Teng-Chun Tsai
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW94117398A priority Critical patent/TWI248166B/en
Application granted granted Critical
Publication of TWI248166B publication Critical patent/TWI248166B/en
Publication of TW200642037A publication Critical patent/TW200642037A/en

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A method of fabricating a semiconductor device is described. A substrate having at least a PMOS and a NMOS is provided first. A dielectric layer which has a first tensile stress is formed on the substrate to cover the PMOS and the NMOS at least. Then, a photo-resist layer is formed on the substrate and the dielectric layer on the PMOS is exposed. An ion implantation is performed to the dielectric layer on the PMOS by using the photo-resist layer as a mask, thus the portion of the dielectric layer has a second tensile stress. The second tensile stress is less than the first tensile stress. Afterward, the photo-resist layer is removed.
TW94117398A 2005-05-27 2005-05-27 Semiconductor device and fabricating method thereof TWI248166B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94117398A TWI248166B (en) 2005-05-27 2005-05-27 Semiconductor device and fabricating method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94117398A TWI248166B (en) 2005-05-27 2005-05-27 Semiconductor device and fabricating method thereof

Publications (2)

Publication Number Publication Date
TWI248166B TWI248166B (en) 2006-01-21
TW200642037A true TW200642037A (en) 2006-12-01

Family

ID=37400749

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94117398A TWI248166B (en) 2005-05-27 2005-05-27 Semiconductor device and fabricating method thereof

Country Status (1)

Country Link
TW (1) TWI248166B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI739775B (en) * 2015-12-08 2021-09-21 台灣積體電路製造股份有限公司 Semiconductor device and manufacturing method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028357A (en) 2006-07-24 2008-02-07 Hynix Semiconductor Inc Semiconductor device and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI739775B (en) * 2015-12-08 2021-09-21 台灣積體電路製造股份有限公司 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
TWI248166B (en) 2006-01-21

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Legal Events

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