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TW200641161A - Method of forming mask and mask - Google Patents

Method of forming mask and mask

Info

Publication number
TW200641161A
TW200641161A TW094146382A TW94146382A TW200641161A TW 200641161 A TW200641161 A TW 200641161A TW 094146382 A TW094146382 A TW 094146382A TW 94146382 A TW94146382 A TW 94146382A TW 200641161 A TW200641161 A TW 200641161A
Authority
TW
Taiwan
Prior art keywords
mask
substrate
forming
attracting
flat surface
Prior art date
Application number
TW094146382A
Other languages
English (en)
Inventor
Shinichi Yotsuya
Hiroshi Koeda
Takayuki Kuwahara
Tadayoshi Ikehara
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of TW200641161A publication Critical patent/TW200641161A/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H10P50/692—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H10P50/693—
    • H10P72/72—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
TW094146382A 2005-01-06 2005-12-23 Method of forming mask and mask TW200641161A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005001153A JP4375232B2 (ja) 2005-01-06 2005-01-06 マスク成膜方法

Publications (1)

Publication Number Publication Date
TW200641161A true TW200641161A (en) 2006-12-01

Family

ID=36641008

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094146382A TW200641161A (en) 2005-01-06 2005-12-23 Method of forming mask and mask

Country Status (5)

Country Link
US (1) US7771789B2 (zh)
JP (1) JP4375232B2 (zh)
KR (1) KR100756316B1 (zh)
CN (1) CN100482851C (zh)
TW (1) TW200641161A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI614354B (zh) * 2013-04-11 2018-02-11 V科技股份有限公司 成膜遮罩
TWI661061B (zh) * 2015-11-25 2019-06-01 日商佳能特機股份有限公司 成膜系統、磁性體部及膜的製造方法

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DE502005003731D1 (de) 2005-04-20 2008-05-29 Applied Materials Gmbh & Co Kg Magnetische Maskenhalterung
JP5138600B2 (ja) * 2006-10-17 2013-02-06 株式会社オプトニクス精密 メタルマスクを用いたウエハのアライメント装置
US20080259236A1 (en) * 2007-04-13 2008-10-23 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic dissipative stage and effectors for use in forming lcd products
WO2008128244A1 (en) * 2007-04-16 2008-10-23 Saint-Gobain Ceramics & Plastics, Inc. Process of cleaning a substrate for microelectronic applications including directing mechanical energy through a fluid bath and apparatus of same
KR20090041316A (ko) * 2007-10-23 2009-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막 방법 및 발광 장치의 제작 방법
DE102008037387A1 (de) * 2008-09-24 2010-03-25 Aixtron Ag Verfahren sowie Vorrichtung zum Abscheiden lateral strukturierter Schichten mittels einer magnetisch auf einem Substrathalter gehaltenen Schattenmaske
JP5642153B2 (ja) * 2009-04-03 2014-12-17 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 材料堆積装置において基板を保持する装置
DE102009024874A1 (de) * 2009-06-09 2010-12-16 Nb Technologies Gmbh Siebdruckform
EP2397905A1 (en) * 2010-06-15 2011-12-21 Applied Materials, Inc. Magnetic holding device and method for holding a substrate
JP6194493B2 (ja) * 2012-03-30 2017-09-13 株式会社ブイ・テクノロジー 薄膜パターン形成方法
JP6109609B2 (ja) * 2013-03-14 2017-04-05 Ａｉメカテック株式会社 ハンダボール印刷機およびハンダボール印刷方法
JP2014218328A (ja) * 2013-05-08 2014-11-20 新東エスプレシジョン株式会社 メタルマスクシート供給システム
JP6168944B2 (ja) * 2013-09-20 2017-07-26 株式会社ブイ・テクノロジー 成膜マスク
CN104046945B (zh) * 2014-06-16 2016-05-25 京东方科技集团股份有限公司 承载台、真空蒸镀设备及其使用方法
CN104928621B (zh) * 2015-05-15 2017-10-31 京东方科技集团股份有限公司 一种制作掩膜板时使用的张网装置及张网方法
CN106048536A (zh) * 2016-06-06 2016-10-26 京东方科技集团股份有限公司 一种蒸镀装置及待蒸镀基板加工方法
CN106435473A (zh) * 2016-11-11 2017-02-22 京东方科技集团股份有限公司 掩模板及其制作方法、有机发光二极管显示器的制作方法
US11220736B2 (en) * 2016-11-18 2022-01-11 Dai Nippon Printing Co., Ltd. Deposition mask
CN106835023B (zh) * 2016-12-23 2019-10-01 上海天马微电子有限公司 蒸镀装置以及蒸镀方法
JP6321248B2 (ja) * 2017-03-08 2018-05-09 Ａｉメカテック株式会社 マスク吸着装置及びそれを有するハンダボール印刷機
JP6301043B1 (ja) * 2017-04-12 2018-03-28 堺ディスプレイプロダクト株式会社 蒸着装置、蒸着方法及び有機ｅｌ表示装置の製造方法
CN109844163A (zh) * 2017-09-26 2019-06-04 应用材料公司 用于使掩蔽装置非接触地悬浮的方法
CN108165927B (zh) 2018-01-03 2020-03-31 京东方科技集团股份有限公司 掩膜版的吸附装置及吸附方法、蒸镀设备及蒸镀方法
JP6618565B2 (ja) * 2018-04-04 2019-12-11 Ａｉメカテック株式会社 マスク吸着装置
CN108735919B (zh) * 2018-05-29 2020-01-03 京东方科技集团股份有限公司 将薄膜图案化的方法、显示器件及其制备方法
KR102591646B1 (ko) * 2018-06-29 2023-10-20 삼성디스플레이 주식회사 증착 장치 및 증착 장치의 마그넷 플레이트 얼라인 방법
US11818944B2 (en) * 2020-03-02 2023-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Deposition system for high accuracy patterning
JP2024044139A (ja) * 2022-09-20 2024-04-02 キヤノントッキ株式会社 マスク、成膜方法及び成膜装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6469439B2 (en) * 1999-06-15 2002-10-22 Toray Industries, Inc. Process for producing an organic electroluminescent device
JP2001003155A (ja) 1999-06-21 2001-01-09 Matsushita Electric Ind Co Ltd 蒸着装置および蒸着方法
JP2001237073A (ja) 2000-02-24 2001-08-31 Tohoku Pioneer Corp 多面取り用メタルマスク及びその製造方法
JP2002047560A (ja) 2000-07-31 2002-02-15 Victor Co Of Japan Ltd 真空蒸着用マスク、それを用いた薄膜パターンの形成方法及びｅｌ素子の製造方法
JP2002075638A (ja) 2000-08-29 2002-03-15 Nec Corp マスク蒸着方法及び蒸着装置
US6475287B1 (en) * 2001-06-27 2002-11-05 Eastman Kodak Company Alignment device which facilitates deposition of organic material through a deposition mask
KR100402102B1 (ko) 2001-06-29 2003-10-17 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 제조방법
JP3775493B2 (ja) * 2001-09-20 2006-05-17 セイコーエプソン株式会社 マスクの製造方法
JP3651432B2 (ja) * 2001-09-25 2005-05-25 セイコーエプソン株式会社 マスク及びその製造方法並びにエレクトロルミネッセンス装置の製造方法
JP2004183044A (ja) 2002-12-03 2004-07-02 Seiko Epson Corp マスク蒸着方法及び装置、マスク及びマスクの製造方法、表示パネル製造装置、表示パネル並びに電子機器
JP4200290B2 (ja) 2003-05-21 2008-12-24 パナソニック株式会社 マスクユニット
JP4235823B2 (ja) 2004-08-12 2009-03-11 セイコーエプソン株式会社 マスクの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI614354B (zh) * 2013-04-11 2018-02-11 V科技股份有限公司 成膜遮罩
TWI661061B (zh) * 2015-11-25 2019-06-01 日商佳能特機股份有限公司 成膜系統、磁性體部及膜的製造方法

Also Published As

Publication number Publication date
US7771789B2 (en) 2010-08-10
KR20060080859A (ko) 2006-07-11
US20060148114A1 (en) 2006-07-06
CN100482851C (zh) 2009-04-29
KR100756316B1 (ko) 2007-09-07
JP2006188731A (ja) 2006-07-20
CN1800432A (zh) 2006-07-12
JP4375232B2 (ja) 2009-12-02

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