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TW200644186A - IC package body, its manufacturing method and integrated circuit apparatus - Google Patents

IC package body, its manufacturing method and integrated circuit apparatus

Info

Publication number
TW200644186A
TW200644186A TW094132993A TW94132993A TW200644186A TW 200644186 A TW200644186 A TW 200644186A TW 094132993 A TW094132993 A TW 094132993A TW 94132993 A TW94132993 A TW 94132993A TW 200644186 A TW200644186 A TW 200644186A
Authority
TW
Taiwan
Prior art keywords
layer
package body
chip
substrate
power supply
Prior art date
Application number
TW094132993A
Other languages
Chinese (zh)
Other versions
TWI281732B (en
Inventor
Masahiro Iwama
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of TW200644186A publication Critical patent/TW200644186A/en
Application granted granted Critical
Publication of TWI281732B publication Critical patent/TWI281732B/en

Links

Classifications

    • H10W72/877—
    • H10W74/142—
    • H10W90/724—

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

The purpose of this invention is used for IC package body to strengthen the electric potential variation endurance of synchronized switch of the IC chip for the power supply or the grounding and improve the heat sink characteristic. The invention is an IC package body. The structure has a substrate for carrying IC chip and a covering portion to cover the said IC chip carried on the substrate. Both the said substrate and the said covering portion or one of them has stack layer with single or plural power supply layer and grounding layer. The inbuilt single or plural capacitors are built by installing oppositely the said power supply layer and the said grounding layer separated with high dielectric body layer. The IC package body has a structure to make the IC chip contacting inside conductor layer and outside conductor layer combined by the heat conducting body (heat conducting hole). It has a structure to shelter the conductor portion.
TW094132993A 2005-06-07 2005-09-23 IC package body, its manufacturing method and integrated circuit apparatus TWI281732B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005167281A JP2006344680A (en) 2005-06-07 2005-06-07 IC package, manufacturing method thereof and integrated circuit device

Publications (2)

Publication Number Publication Date
TW200644186A true TW200644186A (en) 2006-12-16
TWI281732B TWI281732B (en) 2007-05-21

Family

ID=37641440

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094132993A TWI281732B (en) 2005-06-07 2005-09-23 IC package body, its manufacturing method and integrated circuit apparatus

Country Status (2)

Country Link
JP (1) JP2006344680A (en)
TW (1) TWI281732B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI582931B (en) * 2015-11-13 2017-05-11 野田士克林股份有限公司 Semiconductor device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101088086B1 (en) 2009-10-05 2011-11-30 앰코 테크놀로지 코리아 주식회사 Semiconductor package with electromagnetic shielding and heat dissipation means
US8710658B2 (en) * 2011-11-18 2014-04-29 Cambridge Silicon Radio Limited Under bump passive components in wafer level packaging
WO2015190424A1 (en) * 2014-06-13 2015-12-17 日本精工株式会社 Multi-layer printed substrate having noise suppression function and electric power steering device-use electronic control unit substrate using same
KR102710329B1 (en) * 2019-06-21 2024-09-27 삼성전자주식회사 Semiconductor Package
US20250323118A1 (en) * 2024-04-12 2025-10-16 Micron Technology, Inc. Thermal vias for semiconductor components

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10294421A (en) * 1997-04-17 1998-11-04 Hitachi Ltd Multi-chip module and manufacturing method thereof
JPH10308493A (en) * 1997-05-08 1998-11-17 Fujitsu Ltd Semiconductor device, manufacturing method thereof, and multilayer printed circuit board
JP2001035960A (en) * 1999-07-21 2001-02-09 Mitsubishi Electric Corp Semiconductor device and manufacturing method
JP2004079736A (en) * 2002-08-15 2004-03-11 Sony Corp Chip-embedded substrate device and manufacturing method thereof
JP4200812B2 (en) * 2003-05-16 2008-12-24 ソニー株式会社 Semiconductor device, method for manufacturing the same, and electronic circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI582931B (en) * 2015-11-13 2017-05-11 野田士克林股份有限公司 Semiconductor device

Also Published As

Publication number Publication date
JP2006344680A (en) 2006-12-21
TWI281732B (en) 2007-05-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees