[go: up one dir, main page]

TW200636813A - Dielectric film and method of forming the same - Google Patents

Dielectric film and method of forming the same

Info

Publication number
TW200636813A
TW200636813A TW095103702A TW95103702A TW200636813A TW 200636813 A TW200636813 A TW 200636813A TW 095103702 A TW095103702 A TW 095103702A TW 95103702 A TW95103702 A TW 95103702A TW 200636813 A TW200636813 A TW 200636813A
Authority
TW
Taiwan
Prior art keywords
atomic
concentration
forming
same
dielectric film
Prior art date
Application number
TW095103702A
Other languages
English (en)
Other versions
TWI411009B (zh
Inventor
Tadahiro Ohmi
Akinobu Teramoto
Tetsuya Goto
Kazumasa Kawase
Original Assignee
Univ Tohoku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Tohoku filed Critical Univ Tohoku
Publication of TW200636813A publication Critical patent/TW200636813A/zh
Application granted granted Critical
Publication of TWI411009B publication Critical patent/TWI411009B/zh

Links

Classifications

    • H10P14/6526—
    • H10D64/01344—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H10P14/6529—
    • H10P14/6532—
    • H10P14/69433—
    • H10P14/6309—
    • H10P14/6927—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
TW095103702A 2005-02-01 2006-02-03 電介質膜及其形成方法 TWI411009B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005025648 2005-02-01
JP2005257946A JP2006245528A (ja) 2005-02-01 2005-09-06 誘電体膜及びその形成方法

Publications (2)

Publication Number Publication Date
TW200636813A true TW200636813A (en) 2006-10-16
TWI411009B TWI411009B (zh) 2013-10-01

Family

ID=36777107

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095103702A TWI411009B (zh) 2005-02-01 2006-02-03 電介質膜及其形成方法

Country Status (7)

Country Link
US (1) US20080187747A1 (zh)
EP (1) EP1852904A4 (zh)
JP (1) JP2006245528A (zh)
KR (1) KR20070101268A (zh)
CN (1) CN101120437B (zh)
TW (1) TWI411009B (zh)
WO (1) WO2006082718A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI811705B (zh) * 2021-02-25 2023-08-11 日商鎧俠股份有限公司 半導體製造裝置及半導體裝置之製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5156978B2 (ja) * 2007-12-17 2013-03-06 ルネサスエレクトロニクス株式会社 半導体装置の製造装置および半導体装置の製造方法
WO2009157060A1 (ja) * 2008-06-24 2009-12-30 東芝三菱電機産業システム株式会社 窒素ラジカル発生器、窒化処理装置、窒素ラジカルの発生方法および窒化処理方法
US20150118416A1 (en) * 2013-10-31 2015-04-30 Semes Co., Ltd. Substrate treating apparatus and method
CN105140123B (zh) * 2014-05-30 2018-03-06 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管的形成方法
EP4073831A4 (en) * 2019-12-09 2024-01-10 Entegris, Inc. DIFFUSION BARRIERS MADE OF MULTIPLE BARRIER MATERIALS, AND ASSOCIATED ARTICLES AND METHODS

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6399445B1 (en) * 1997-12-18 2002-06-04 Texas Instruments Incorporated Fabrication technique for controlled incorporation of nitrogen in gate dielectric
US6087229A (en) * 1998-03-09 2000-07-11 Lsi Logic Corporation Composite semiconductor gate dielectrics
US6342437B1 (en) * 2000-06-01 2002-01-29 Micron Technology, Inc. Transistor and method of making the same
JP2002151684A (ja) * 2000-11-09 2002-05-24 Nec Corp 半導体装置及びその製造方法
JP4606737B2 (ja) * 2001-08-02 2011-01-05 東京エレクトロン株式会社 基材処理方法および電子デバイス用材料
JP4048048B2 (ja) * 2001-12-18 2008-02-13 東京エレクトロン株式会社 基板処理方法
US7018879B2 (en) * 2002-03-20 2006-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method of making an ultrathin silicon dioxide gate with improved dielectric properties using NH3 nitridation and post-deposition rapid thermal annealing
TW200402801A (en) * 2002-03-29 2004-02-16 Tokyo Electron Ltd Material for electronic device and process for producing the same
WO2003098678A1 (en) * 2002-05-16 2003-11-27 Tokyo Electron Limited Method of treating substrate
JP2004087865A (ja) * 2002-08-28 2004-03-18 Hitachi Ltd 半導体装置の製造方法
JP2005150285A (ja) * 2003-11-13 2005-06-09 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI811705B (zh) * 2021-02-25 2023-08-11 日商鎧俠股份有限公司 半導體製造裝置及半導體裝置之製造方法

Also Published As

Publication number Publication date
KR20070101268A (ko) 2007-10-16
CN101120437A (zh) 2008-02-06
TWI411009B (zh) 2013-10-01
JP2006245528A (ja) 2006-09-14
US20080187747A1 (en) 2008-08-07
WO2006082718A1 (ja) 2006-08-10
CN101120437B (zh) 2010-05-19
EP1852904A1 (en) 2007-11-07
EP1852904A4 (en) 2009-11-18

Similar Documents

Publication Publication Date Title
TW200717653A (en) A method of forming a silicon oxynitride film with tensile stress
TW200619287A (en) Composition and method
TW200802703A (en) Method of forming a self aligned copper capping layer
WO2005070090A3 (en) Regulatory t cells suppress autoimmunity
TW200717611A (en) Film formation method and apparatus for semiconductor process
TW200509391A (en) A device having multiple silicide types and a method for its fabrication
DE60140179D1 (de) Verfahren zur herstellung eines flash-speicherbausteins
TW200802889A (en) Semiconductor device and manufacturing method thereof
AU301246S (en) Fuel cell supply
TW200721307A (en) Method and apparatus for forming silicon-containing insulating film
WO2007001301A3 (en) Atomic layer deposition (ald) system and method
MX2007003262A (es) Dispositivo electronico con tres capas movibles.
MX2021015070A (es) Inmunomodulacion usando celulas madre de la placenta.
WO2011008925A3 (en) Methods for forming dielectric layers
EP1801909A4 (en) DYE-SENSITIZED METAL SEMICONDUCTOR SEMICONDUCTOR ELECTRODE AND METHOD OF MANUFACTURING THE SAME, AND DYE-SENSITIZED SOLAR CELL
TW200625444A (en) Method and apparatus for forming silicon oxide film
WO2012028793A3 (fr) Traitement avant collage d'une surface mixte cu-oxyde, par un plasma contenant de l'azote et de l'hydrogène
PT3075435T (pt) Método para a diminuição do teor de óxidos de azoto em gases
TW200508428A (en) Plating method
TW200636813A (en) Dielectric film and method of forming the same
TW200735213A (en) Integrated circuit and method for manufacturing the same
TW200746340A (en) Substrate processing system and method therefor
TW200701478A (en) Capacitor with nano-composite dielectric layer and method for fabricating the same
EP1655786A3 (en) Method of forming electrode for compound semiconductor device
TW200613000A (en) Compositions for accelerated tooth-whitening

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees