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TW200620446A - Removing liquid and removing method of copper deteriorated layer containing copper oxide - Google Patents

Removing liquid and removing method of copper deteriorated layer containing copper oxide

Info

Publication number
TW200620446A
TW200620446A TW094131655A TW94131655A TW200620446A TW 200620446 A TW200620446 A TW 200620446A TW 094131655 A TW094131655 A TW 094131655A TW 94131655 A TW94131655 A TW 94131655A TW 200620446 A TW200620446 A TW 200620446A
Authority
TW
Taiwan
Prior art keywords
copper
deteriorated layer
layer containing
copper oxide
removing liquid
Prior art date
Application number
TW094131655A
Other languages
Chinese (zh)
Inventor
Shingo Nakamura
Fumihiro Kamiya
Takehiko Kezuka
Takashi Kanemura
Mitsushi Itano
Original Assignee
Daikin Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Ind Ltd filed Critical Daikin Ind Ltd
Publication of TW200620446A publication Critical patent/TW200620446A/en

Links

Classifications

    • H10P50/267—
    • H10P70/234—
    • H10P70/273—

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Removal Of Specific Substances (AREA)

Abstract

The present invention relates to the residue removing liquid of the copper deteriorated layer contains copper oxide damaged by dry etching and/or ashing consisting of monocarboxylic acid and water.
TW094131655A 2004-09-15 2005-09-14 Removing liquid and removing method of copper deteriorated layer containing copper oxide TW200620446A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004268396 2004-09-15
JP2005160442A JP2006114872A (en) 2004-09-15 2005-05-31 Removal liquid and removal method of copper deteriorated layer containing copper oxide

Publications (1)

Publication Number Publication Date
TW200620446A true TW200620446A (en) 2006-06-16

Family

ID=36059967

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094131655A TW200620446A (en) 2004-09-15 2005-09-14 Removing liquid and removing method of copper deteriorated layer containing copper oxide

Country Status (3)

Country Link
JP (1) JP2006114872A (en)
TW (1) TW200620446A (en)
WO (1) WO2006030714A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI725010B (en) * 2015-02-23 2021-04-21 日商富士軟片股份有限公司 Etching solution, etching method and manufacturing method of semiconductor substrate product

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007140193A1 (en) * 2006-05-25 2007-12-06 Honeywell International Inc. Selective tantalum carbide etchant, methods of production and uses thereof
JP4766114B2 (en) * 2006-08-24 2011-09-07 ダイキン工業株式会社 Residue removing liquid after semiconductor dry process and residue removing method using the same
JP4766115B2 (en) * 2006-08-24 2011-09-07 ダイキン工業株式会社 Residue removing liquid after semiconductor dry process and residue removing method using the same
JP5159066B2 (en) * 2006-08-24 2013-03-06 ダイキン工業株式会社 Residue removing liquid after semiconductor dry process and residue removing method using the same
JP2008210990A (en) * 2007-02-26 2008-09-11 Fujifilm Corp Semiconductor device cleaning agent and semiconductor device cleaning method using the same
JP2011016975A (en) * 2009-06-12 2011-01-27 Asahi Kasei Corp Etchant for copper oxide and etching method for copper oxide using the same
TWI561615B (en) * 2012-07-24 2016-12-11 Ltc Co Ltd Composition for removal and prevention of formation of oxide on surface of metal wiring
JP6029419B2 (en) * 2012-11-02 2016-11-24 ダイキン工業株式会社 Residue removing liquid after semiconductor dry process and residue removing method using the same
JP6468716B2 (en) * 2014-04-04 2019-02-13 東京応化工業株式会社 Lithographic cleaning liquid and substrate etching method
JP6557575B2 (en) * 2015-10-23 2019-08-07 株式会社Adeka Etching solution composition and etching method
CN111485263B (en) * 2019-01-25 2023-02-17 上海新阳半导体材料股份有限公司 Lead frame deoxidant, preparation method and application thereof
KR102379127B1 (en) * 2022-01-05 2022-03-25 (주)뉴이스트 Cleaning Composition for Copper Removal, and Method of Cleaning Semiconductor Manufacturing Equipment Using Cleaning Composition for Copper Removal

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6361712B1 (en) * 1999-10-15 2002-03-26 Arch Specialty Chemicals, Inc. Composition for selective etching of oxides over metals
JP2002299300A (en) * 2001-03-30 2002-10-11 Kaijo Corp Substrate treatment method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI725010B (en) * 2015-02-23 2021-04-21 日商富士軟片股份有限公司 Etching solution, etching method and manufacturing method of semiconductor substrate product

Also Published As

Publication number Publication date
JP2006114872A (en) 2006-04-27
WO2006030714A1 (en) 2006-03-23

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