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TW200627076A - Method for removing defect material of a lithography mask - Google Patents

Method for removing defect material of a lithography mask

Info

Publication number
TW200627076A
TW200627076A TW094147731A TW94147731A TW200627076A TW 200627076 A TW200627076 A TW 200627076A TW 094147731 A TW094147731 A TW 094147731A TW 94147731 A TW94147731 A TW 94147731A TW 200627076 A TW200627076 A TW 200627076A
Authority
TW
Taiwan
Prior art keywords
region
lithography mask
removing defect
defect material
absorber
Prior art date
Application number
TW094147731A
Other languages
English (en)
Inventor
Christoph Noelscher
Martin Verbeek
Christian Crell
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of TW200627076A publication Critical patent/TW200627076A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW094147731A 2005-01-28 2005-12-30 Method for removing defect material of a lithography mask TW200627076A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005004070A DE102005004070B3 (de) 2005-01-28 2005-01-28 Verfahren zum Entfernen von Defektmaterial einer Lithographiemaske

Publications (1)

Publication Number Publication Date
TW200627076A true TW200627076A (en) 2006-08-01

Family

ID=35929832

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094147731A TW200627076A (en) 2005-01-28 2005-12-30 Method for removing defect material of a lithography mask

Country Status (7)

Country Link
US (1) US20070037071A1 (zh)
EP (1) EP1842098A1 (zh)
JP (1) JP2007534993A (zh)
KR (1) KR100841036B1 (zh)
DE (1) DE102005004070B3 (zh)
TW (1) TW200627076A (zh)
WO (1) WO2006079529A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10384238B2 (en) 2007-09-17 2019-08-20 Rave Llc Debris removal in high aspect structures
US10330581B2 (en) 2007-09-17 2019-06-25 Rave Llc Debris removal from high aspect structures
WO2019016224A1 (en) 2017-07-21 2019-01-24 Carl Zeiss Smt Gmbh METHOD AND APPARATUS FOR REMOVING EXCESS MATERIALS FROM A PHOTOLITHOGRAPHIC MASK
DE102021201669B4 (de) 2021-02-22 2023-08-17 Carl Zeiss Smt Gmbh Verfahren und vorrichtung zum bearbeiten einer probe

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03139647A (ja) * 1989-10-26 1991-06-13 Fujitsu Ltd マスクの修正方法
JP3377119B2 (ja) * 1993-12-27 2003-02-17 Ｈｏｙａ株式会社 マスクパターンの欠陥修正方法
JP3015646B2 (ja) * 1993-12-27 2000-03-06 株式会社東芝 位相シフトマスクの欠陥修正方法及び欠陥修正装置
US5882823A (en) * 1997-05-21 1999-03-16 International Business Machines Corporation Fib repair method
US6016357A (en) * 1997-06-16 2000-01-18 International Business Machines Corporation Feedback method to repair phase shift masks
JP3761681B2 (ja) * 1997-08-19 2006-03-29 沖電気工業株式会社 フォトマスク欠損欠陥修正方法
EP0961168B1 (en) * 1998-05-18 2009-04-08 International Business Machines Corporation Method for repair of photomasks
US6322672B1 (en) * 2000-03-10 2001-11-27 Fei Company Method and apparatus for milling copper interconnects in a charged particle beam system
US6933081B2 (en) * 2002-05-15 2005-08-23 Micron Technology, Inc. Method for quartz bump defect repair with less substrate damage
DE10244399B4 (de) * 2002-09-24 2006-08-03 Infineon Technologies Ag Defekt-Reparatur-Verfahren zur Reparatur von Masken-Defekten
DE10310136B4 (de) * 2003-03-07 2007-05-03 Infineon Technologies Ag Maskensatz zur Projektion von jeweils auf den Masken des Satzes angeordneten und aufeinander abgestimmten Strukturmustern auf einen Halbleiterwafer
US7150946B2 (en) * 2004-01-08 2006-12-19 Infineon Technologies Ag Method for the repair of defects in photolithographic masks for patterning semiconductor wafers
US20060147814A1 (en) * 2005-01-03 2006-07-06 Ted Liang Methods for repairing an alternating phase-shift mask

Also Published As

Publication number Publication date
KR100841036B1 (ko) 2008-06-24
WO2006079529A1 (de) 2006-08-03
EP1842098A1 (de) 2007-10-10
US20070037071A1 (en) 2007-02-15
DE102005004070B3 (de) 2006-08-03
JP2007534993A (ja) 2007-11-29
KR20070042921A (ko) 2007-04-24

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