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TW200603507A - VCSEL having an air gap and protective coating - Google Patents

VCSEL having an air gap and protective coating

Info

Publication number
TW200603507A
TW200603507A TW094103206A TW94103206A TW200603507A TW 200603507 A TW200603507 A TW 200603507A TW 094103206 A TW094103206 A TW 094103206A TW 94103206 A TW94103206 A TW 94103206A TW 200603507 A TW200603507 A TW 200603507A
Authority
TW
Taiwan
Prior art keywords
vcsel
gap
protective layer
mirror stack
oxide
Prior art date
Application number
TW094103206A
Other languages
English (en)
Inventor
Scott A Mchugo
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of TW200603507A publication Critical patent/TW200603507A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/1835—Non-circular mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18316—Airgap confined
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18338—Non-circular shape of the structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
TW094103206A 2004-07-15 2005-02-02 VCSEL having an air gap and protective coating TW200603507A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/892,983 US20060013276A1 (en) 2004-07-15 2004-07-15 VCSEL having an air gap and protective coating

Publications (1)

Publication Number Publication Date
TW200603507A true TW200603507A (en) 2006-01-16

Family

ID=35599361

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094103206A TW200603507A (en) 2004-07-15 2005-02-02 VCSEL having an air gap and protective coating

Country Status (6)

Country Link
US (1) US20060013276A1 (zh)
JP (1) JP2006032964A (zh)
KR (1) KR101148287B1 (zh)
CN (1) CN1722552A (zh)
DE (1) DE102005011381A1 (zh)
TW (1) TW200603507A (zh)

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TWI797931B (zh) * 2020-12-31 2023-04-01 穩懋半導體股份有限公司 垂直腔面射型雷射及其形成方法

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JP5228363B2 (ja) 2007-04-18 2013-07-03 ソニー株式会社 発光素子
JP2009238832A (ja) * 2008-03-26 2009-10-15 Furukawa Electric Co Ltd:The 面発光半導体レーザの製造方法
JP2009277781A (ja) * 2008-05-13 2009-11-26 Ricoh Co Ltd 面発光型レーザーアレイ素子、光走査装置及び画像形成装置
WO2013110004A1 (en) * 2012-01-20 2013-07-25 The Regents Of The University Of California Short cavity surface emitting laser with double high contrast gratings with and without airgap
EP2963744B1 (en) * 2014-06-30 2019-04-03 Canon Kabushiki Kaisha Surface emitting laser and optical coherence tomography apparatus including the same
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US10825952B2 (en) 2017-01-16 2020-11-03 Apple Inc. Combining light-emitting elements of differing divergence on the same substrate
US11381060B2 (en) * 2017-04-04 2022-07-05 Apple Inc. VCSELs with improved optical and electrical confinement
CN119050806A (zh) 2019-02-21 2024-11-29 苹果公司 具有电介质dbr的磷化铟vcsel
US11764544B2 (en) 2019-02-28 2023-09-19 Seoul Viosys Co., Ltd. Vertical-cavity surface-emitting laser
US11441484B2 (en) 2019-03-20 2022-09-13 Seoul Viosys Co., Ltd. Vertical-cavity surface-emitting laser device
JP2020167214A (ja) 2019-03-28 2020-10-08 セイコーエプソン株式会社 半導体レーザーおよび原子発振器
JP2020167213A (ja) 2019-03-28 2020-10-08 セイコーエプソン株式会社 半導体レーザーおよび原子発振器
CN113711450B (zh) 2019-04-01 2025-02-18 苹果公司 具有紧密节距和高效率的vcsel阵列
US11374381B1 (en) 2019-06-10 2022-06-28 Apple Inc. Integrated laser module
CN110212407B (zh) * 2019-07-08 2024-02-09 苏州长瑞光电有限公司 垂直腔面发射激光器及其功率调节方法
CN111029901B (zh) * 2019-12-11 2021-06-29 深圳博升光电科技有限公司 垂直腔面发射激光器的结构及制造方法
CN110752509B (zh) * 2019-12-23 2020-04-21 常州纵慧芯光半导体科技有限公司 一种具有非对称氧化结构vcsel单元
TWI767598B (zh) * 2020-03-20 2022-06-11 德商通快光電器件有限公司 形成垂直腔面發射雷射的光學孔徑之方法和垂直腔面發射雷射
DE102020118824A1 (de) * 2020-07-16 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement, verfahren zur herstellung des optoelektronischen halbleiterbauelements und lidar-system
CN112310810A (zh) * 2020-11-02 2021-02-02 宁波飞芯电子科技有限公司 一种半导体激光发射器
CN113285352A (zh) * 2021-07-23 2021-08-20 华芯半导体研究院(北京)有限公司 具有分拣保护结构的垂直腔面发射激光器
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CN119209203A (zh) * 2024-09-18 2024-12-27 上海新微半导体有限公司 垂直腔面发射激光器的外延结构及其校验方法

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Also Published As

Publication number Publication date
KR20060050164A (ko) 2006-05-19
KR101148287B1 (ko) 2012-05-22
DE102005011381A1 (de) 2006-02-16
JP2006032964A (ja) 2006-02-02
US20060013276A1 (en) 2006-01-19
CN1722552A (zh) 2006-01-18

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