TW200603284A - Method for forming oxide on ONO structure - Google Patents
Method for forming oxide on ONO structureInfo
- Publication number
- TW200603284A TW200603284A TW093120185A TW93120185A TW200603284A TW 200603284 A TW200603284 A TW 200603284A TW 093120185 A TW093120185 A TW 093120185A TW 93120185 A TW93120185 A TW 93120185A TW 200603284 A TW200603284 A TW 200603284A
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon nitride
- oxide layer
- silicon
- layer
- ono
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 5
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 3
- 238000004140 cleaning Methods 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 238000004151 rapid thermal annealing Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Landscapes
- Formation Of Insulating Films (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93120185A TWI236712B (en) | 2004-07-06 | 2004-07-06 | Method for forming oxide on ONO structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93120185A TWI236712B (en) | 2004-07-06 | 2004-07-06 | Method for forming oxide on ONO structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI236712B TWI236712B (en) | 2005-07-21 |
| TW200603284A true TW200603284A (en) | 2006-01-16 |
Family
ID=36675009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW93120185A TWI236712B (en) | 2004-07-06 | 2004-07-06 | Method for forming oxide on ONO structure |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI236712B (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI749775B (zh) * | 2019-09-24 | 2021-12-11 | 大陸商北京北方華創微電子裝備有限公司 | 氧化層去除方法及半導體加工設備 |
| TWI829426B (zh) * | 2022-11-14 | 2024-01-11 | 力晶積成電子製造股份有限公司 | 多層堆疊晶圓接合結構及其製作方法 |
-
2004
- 2004-07-06 TW TW93120185A patent/TWI236712B/zh not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI749775B (zh) * | 2019-09-24 | 2021-12-11 | 大陸商北京北方華創微電子裝備有限公司 | 氧化層去除方法及半導體加工設備 |
| TWI829426B (zh) * | 2022-11-14 | 2024-01-11 | 力晶積成電子製造股份有限公司 | 多層堆疊晶圓接合結構及其製作方法 |
| US12354870B2 (en) | 2022-11-14 | 2025-07-08 | Powerchip Semiconductor Manufacturing Corporation | Multilayer stacking wafer bonding structure and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI236712B (en) | 2005-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100440456C (zh) | 制造具有不同厚度氧化膜的半导体器件的方法 | |
| JP4217406B2 (ja) | スプリットゲート型フラッシュメモリ素子およびその製造方法 | |
| CN101312214B (zh) | 半导体装置及其制造方法 | |
| JP2003017555A (ja) | 半導体集積回路装置およびその製造方法 | |
| TWI223382B (en) | Semiconductor structure having recess-resistant insulating layer and method of fabricating the same | |
| US7259105B2 (en) | Methods of fabricating gate spacers for semiconductor devices | |
| TW200603284A (en) | Method for forming oxide on ONO structure | |
| US7391081B2 (en) | Method for simultaneous fabrication of a nanocrystal and non-nanocrystal device | |
| CN101145583A (zh) | 分离式栅极存储单元与半导体装置及其形成方法 | |
| SG149666A1 (en) | Method of fabrication of a raised source/drain transistor | |
| KR100670395B1 (ko) | 반도체 소자의 제조 방법 | |
| TW200418112A (en) | Semiconductor device and manufacturing method thereof | |
| KR20070082921A (ko) | 핀형 전계 효과 트랜지스터의 소자 분리막 제조 방법 및핀형 전계 효과 트랜지스터의 제조방법 | |
| JP4546054B2 (ja) | 半導体装置の製造方法 | |
| US6812077B1 (en) | Method for patterning narrow gate lines | |
| US6855993B2 (en) | Semiconductor devices and methods for fabricating the same | |
| JP2012109378A (ja) | 半導体装置およびその製造方法 | |
| KR100854905B1 (ko) | 플래시 메모리 소자의 제조 방법 | |
| TW200843087A (en) | Semiconductor device and method for manufacturing the same | |
| US20080042198A1 (en) | Demos structure | |
| KR100412147B1 (ko) | 반도체장치의 제조방법 | |
| CN118969615A (zh) | U型沟槽的制造方法 | |
| KR100552859B1 (ko) | 반도체 소자의 제조 방법 | |
| KR100613345B1 (ko) | 반도체 소자의 제조 방법 | |
| KR20060007159A (ko) | Ｓｏｎｏｓ의 듀얼 게이트유전체 제조 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |