[go: up one dir, main page]

TW200603254A - Resist pattern forming method, semiconductor apparatus using said method, and exposure apparatus thereof - Google Patents

Resist pattern forming method, semiconductor apparatus using said method, and exposure apparatus thereof

Info

Publication number
TW200603254A
TW200603254A TW094108061A TW94108061A TW200603254A TW 200603254 A TW200603254 A TW 200603254A TW 094108061 A TW094108061 A TW 094108061A TW 94108061 A TW94108061 A TW 94108061A TW 200603254 A TW200603254 A TW 200603254A
Authority
TW
Taiwan
Prior art keywords
resist film
resist
film
pattern
resist pattern
Prior art date
Application number
TW094108061A
Other languages
English (en)
Other versions
TWI268544B (en
Inventor
Shinichi Ito
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200603254A publication Critical patent/TW200603254A/zh
Application granted granted Critical
Publication of TWI268544B publication Critical patent/TWI268544B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H10P95/00—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW094108061A 2004-03-24 2005-03-16 Resist pattern forming method, semiconductor apparatus using said method, and exposure apparatus thereof TWI268544B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004087420A JP4220423B2 (ja) 2004-03-24 2004-03-24 レジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW200603254A true TW200603254A (en) 2006-01-16
TWI268544B TWI268544B (en) 2006-12-11

Family

ID=35046647

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094108061A TWI268544B (en) 2004-03-24 2005-03-16 Resist pattern forming method, semiconductor apparatus using said method, and exposure apparatus thereof

Country Status (5)

Country Link
US (4) US7524618B2 (zh)
JP (1) JP4220423B2 (zh)
CN (1) CN100342491C (zh)
NL (1) NL1028595C2 (zh)
TW (1) TWI268544B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI624308B (zh) * 2015-01-15 2018-05-21 東京威力科創股份有限公司 液體處理方法、液體處理裝置及記錄媒體

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4535489B2 (ja) * 2004-03-31 2010-09-01 東京エレクトロン株式会社 塗布・現像装置
JP4759311B2 (ja) * 2004-05-17 2011-08-31 富士フイルム株式会社 パターン形成方法
ATE450813T1 (de) 2004-05-17 2009-12-15 Fujifilm Corp Verfahren zur erzeugung eines musters
JP2005353763A (ja) * 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 露光装置及びパターン形成方法
TWI322334B (en) * 2004-07-02 2010-03-21 Rohm & Haas Elect Mat Method for processing a photoresist composition in an immersion photolithography process and system and organic barrier composition used therein
US20060008746A1 (en) * 2004-07-07 2006-01-12 Yasunobu Onishi Method for manufacturing semiconductor device
JP2006049757A (ja) * 2004-08-09 2006-02-16 Tokyo Electron Ltd 基板処理方法
JP4271109B2 (ja) * 2004-09-10 2009-06-03 東京エレクトロン株式会社 塗布、現像装置、レジストパターン形成方法、露光装置及び洗浄装置
US7133114B2 (en) * 2004-09-20 2006-11-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101236120B1 (ko) * 2004-10-26 2013-02-28 가부시키가이샤 니콘 기판 처리 방법, 노광 장치 및 디바이스 제조 방법
US20070242248A1 (en) * 2004-10-26 2007-10-18 Nikon Corporation Substrate processing method, exposure apparatus, and method for producing device
JP5154008B2 (ja) * 2004-11-10 2013-02-27 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP2006310724A (ja) * 2004-11-10 2006-11-09 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP5008280B2 (ja) * 2004-11-10 2012-08-22 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
KR20070085214A (ko) * 2004-11-11 2007-08-27 가부시키가이샤 니콘 노광 방법, 디바이스 제조 방법, 및 기판
JP5154007B2 (ja) * 2004-12-06 2013-02-27 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4926433B2 (ja) * 2004-12-06 2012-05-09 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP4794232B2 (ja) * 2004-12-06 2011-10-19 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4551758B2 (ja) * 2004-12-27 2010-09-29 株式会社東芝 液浸露光方法および半導体装置の製造方法
JP4591093B2 (ja) * 2005-01-18 2010-12-01 Ｊｓｒ株式会社 走査型露光方法
JP4634822B2 (ja) * 2005-02-24 2011-02-16 株式会社東芝 レジストパターン形成方法および半導体装置の製造方法
JP4718893B2 (ja) * 2005-05-13 2011-07-06 株式会社東芝 パターン形成方法
JP4522329B2 (ja) * 2005-06-24 2010-08-11 株式会社Sokudo 基板処理装置
US7468779B2 (en) * 2005-06-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7927779B2 (en) * 2005-06-30 2011-04-19 Taiwan Semiconductor Manufacturing Companym, Ltd. Water mark defect prevention for immersion lithography
US20070002296A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction
US8383322B2 (en) 2005-08-05 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography watermark reduction
JP4761907B2 (ja) * 2005-09-28 2011-08-31 株式会社Sokudo 基板処理装置
US7993808B2 (en) 2005-09-30 2011-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. TARC material for immersion watermark reduction
KR100802266B1 (ko) * 2005-11-21 2008-02-11 주식회사 하이닉스반도체 이머젼 리소그라피 공정을 이용한 반도체 소자 제조방법
JP4654119B2 (ja) * 2005-11-29 2011-03-16 東京エレクトロン株式会社 塗布・現像装置及び塗布・現像方法
US8125610B2 (en) * 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
JP5114021B2 (ja) 2006-01-23 2013-01-09 富士フイルム株式会社 パターン形成方法
JP5114022B2 (ja) * 2006-01-23 2013-01-09 富士フイルム株式会社 パターン形成方法
JP4771816B2 (ja) * 2006-01-27 2011-09-14 大日本スクリーン製造株式会社 基板処理装置
JP4807749B2 (ja) * 2006-09-15 2011-11-02 東京エレクトロン株式会社 露光・現像処理方法
US8518628B2 (en) 2006-09-22 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Surface switchable photoresist
US8177993B2 (en) * 2006-11-05 2012-05-15 Globalfoundries Singapore Pte Ltd Apparatus and methods for cleaning and drying of wafers
JP4926678B2 (ja) * 2006-12-04 2012-05-09 東京エレクトロン株式会社 液浸露光用洗浄装置および洗浄方法、ならびにコンピュータプログラムおよび記憶媒体
US9632425B2 (en) * 2006-12-07 2017-04-25 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
JP4922858B2 (ja) * 2007-07-30 2012-04-25 株式会社東芝 パターン形成方法及び洗浄装置
NL2002983A1 (nl) * 2008-06-26 2009-12-29 Asml Netherlands Bv A lithographic apparatus and a method of operating the lithographic apparatus.
CA3085086C (en) 2011-12-06 2023-08-08 Delta Faucet Company Ozone distribution in a faucet
KR20150080557A (ko) * 2012-12-07 2015-07-09 후지필름 가부시키가이샤 경화막의 제조 방법, 경화막, 액정 표시 장치 및 유기 el 표시 장치
JP2014211490A (ja) * 2013-04-17 2014-11-13 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法及び電子デバイス
JP6456238B2 (ja) 2015-05-14 2019-01-23 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CA3007437C (en) 2015-12-21 2021-09-28 Delta Faucet Company Fluid delivery system including a disinfectant device

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2727481B2 (ja) * 1992-02-07 1998-03-11 キヤノン株式会社 液晶素子用ガラス基板の洗浄方法
US6235141B1 (en) * 1996-09-27 2001-05-22 Digital Optics Corporation Method of mass producing and packaging integrated optical subsystems
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JPH1152541A (ja) * 1997-08-08 1999-02-26 Yokogawa Electric Corp 露光マスク装置
US6291800B1 (en) * 1998-02-20 2001-09-18 Tokyo Electron Limited Heat treatment apparatus and substrate processing system
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2002151462A (ja) * 2000-11-09 2002-05-24 Fujitsu Ltd ウエットエッチング終点検出方法及び装置並びにウエットエッチング方法
US6420098B1 (en) * 2000-07-12 2002-07-16 Motorola, Inc. Method and system for manufacturing semiconductor devices on a wafer
TW550635B (en) * 2001-03-09 2003-09-01 Toshiba Corp Manufacturing system of electronic devices
TW561516B (en) * 2001-11-01 2003-11-11 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method
US7288466B2 (en) * 2002-05-14 2007-10-30 Kabushiki Kaisha Toshiba Processing method, manufacturing method of semiconductor device, and processing apparatus
JP4525062B2 (ja) 2002-12-10 2010-08-18 株式会社ニコン 露光装置及びデバイス製造方法、露光システム
EP1571694A4 (en) * 2002-12-10 2008-10-15 Nikon Corp EXPOSURE EQUIPMENT AND MANUFACTURING METHOD DAF R
US6770424B2 (en) * 2002-12-16 2004-08-03 Asml Holding N.V. Wafer track apparatus and methods for dispensing fluids with rotatable dispense arms
US7029832B2 (en) * 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
JP4582089B2 (ja) 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
WO2004102646A1 (ja) * 2003-05-15 2004-11-25 Nikon Corporation 露光装置及びデバイス製造方法
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US7070915B2 (en) * 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
JP2005191511A (ja) * 2003-12-02 2005-07-14 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US20050153424A1 (en) * 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
JP3857692B2 (ja) 2004-01-15 2006-12-13 株式会社東芝 パターン形成方法
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
JP4365236B2 (ja) * 2004-02-20 2009-11-18 富士フイルム株式会社 液浸露光用レジスト組成物及びそれを用いたパターン形成方法
JP4535489B2 (ja) * 2004-03-31 2010-09-01 東京エレクトロン株式会社 塗布・現像装置
US20050250054A1 (en) * 2004-05-10 2005-11-10 Ching-Yu Chang Development of photolithographic masks for semiconductors
KR101236120B1 (ko) 2004-10-26 2013-02-28 가부시키가이샤 니콘 기판 처리 방법, 노광 장치 및 디바이스 제조 방법
JP2006222284A (ja) * 2005-02-10 2006-08-24 Toshiba Corp パターン形成方法、及び半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI624308B (zh) * 2015-01-15 2018-05-21 東京威力科創股份有限公司 液體處理方法、液體處理裝置及記錄媒體

Also Published As

Publication number Publication date
US20110075119A1 (en) 2011-03-31
JP4220423B2 (ja) 2009-02-04
US10048593B2 (en) 2018-08-14
CN1674228A (zh) 2005-09-28
NL1028595A1 (nl) 2005-09-27
US20050221234A1 (en) 2005-10-06
US20090190114A1 (en) 2009-07-30
CN100342491C (zh) 2007-10-10
TWI268544B (en) 2006-12-11
JP2005277053A (ja) 2005-10-06
US20170336722A1 (en) 2017-11-23
NL1028595C2 (nl) 2008-02-28
US7524618B2 (en) 2009-04-28
US7821616B2 (en) 2010-10-26

Similar Documents

Publication Publication Date Title
TW200603254A (en) Resist pattern forming method, semiconductor apparatus using said method, and exposure apparatus thereof
TW200606597A (en) Immersion lithography exposure apparatus and method
SG142398A1 (en) Catadioptric optical system and exposure apparatus having said optical system
CN1954408B (zh) 曝光装置、曝光方法及元件制造方法
JP2005085789A5 (zh)
TW200509205A (en) Exposure method and device-manufacturing method
TW200507063A (en) Linking unit, exposure apparatus and method for manufacturing device
EP1571700A4 (en) OPTICAL DEVICE AND PROJECTION EXPOSURE DEVICE USING THE OPTICAL DEVICE
TW200520053A (en) Immersion lithographic process using a conforming immersion medium
SG145780A1 (en) Exposure apparatus and device fabricating method
TW200502720A (en) Immersion photolithography system and method using inverted wafer-projection optics interface
TWI372309B (en) Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
WO2004112108A1 (ja) 露光方法、基板ステージ、露光装置、及びデバイス製造方法
EP1672682A4 (en) SUBSTRATE TRANSPORT DEVICE AND METHOD, EXPOSURE DEVICE AND METHOD AND COMPONENT MANUFACTURING METHOD
JP2005197384A5 (zh)
SG147431A1 (en) Exposure apparatus, exposure method, and method for producing device
EP1571698A4 (en) EXPOSURE DEVICE, EXPOSURE METHOD AND METHOD FOR PRODUCING COMPONENTS
IL174566A0 (en) Liquid immersion type lens system, projection exposure apparatus, and device fabricating method
EP1571695A4 (en) EXPOSURE DEVICE AND METHOD FOR PRODUCING THE DEVICE
WO2005055296A1 (ja) 露光装置、露光方法及びデバイス製造方法、並びに光学部品
EP1672681B8 (en) Exposure apparatus, substrate carrying method, exposure method, and method for producing device
TWI266373B (en) Pattern forming method and method of manufacturing semiconductor device
EP1605310A3 (en) Exposure system and pattern formation method
TW200727335A (en) Method for forming resist pattern, and method for manufacturing semiconductor device
SG143284A1 (en) Lithographic apparatus and device manufacturing method

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent