TW200601540A - Electrostatic discharge (ESD) protection MOS device and ESD circuitry thereof - Google Patents
Electrostatic discharge (ESD) protection MOS device and ESD circuitry thereofInfo
- Publication number
- TW200601540A TW200601540A TW093117816A TW93117816A TW200601540A TW 200601540 A TW200601540 A TW 200601540A TW 093117816 A TW093117816 A TW 093117816A TW 93117816 A TW93117816 A TW 93117816A TW 200601540 A TW200601540 A TW 200601540A
- Authority
- TW
- Taiwan
- Prior art keywords
- well
- esd
- nmos device
- isolation structure
- epitaxial layer
- Prior art date
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
An NMOS device having protection against electrostatic discharge. The NMOS device includes a P-substrate, a P-epitaxial layer overlying the P-substrate, a P-well in the P-epitaxial layer, an N-well in the P-epitaxial layer and encompassing the P-well, an N-Buried Layer (NBL) underneath the P-well and bordering the N-well. The P-well is fully isolated by the N-well and the NBL. The NMOS device further includes a first isolation structure consisting of a gate-insulating layer connected with a field oxide layer, which is formed on the P-epitaxial layer. A gate overlies the first isolation structure. A second isolation structure laterally spaced apart from the first isolation structure is approximately situated on the N-well. An N+ source doping region, which functions as a source of the NMOS device, is disposed in the P-well. An N+ drain doping region, which functions as a drain of the NMOS device, is disposed in the N-well.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93117816A TWI244195B (en) | 2004-06-18 | 2004-06-18 | Electrostatic discharge (ESD) protection MOS device and ESD circuitry thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93117816A TWI244195B (en) | 2004-06-18 | 2004-06-18 | Electrostatic discharge (ESD) protection MOS device and ESD circuitry thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI244195B TWI244195B (en) | 2005-11-21 |
| TW200601540A true TW200601540A (en) | 2006-01-01 |
Family
ID=37154730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW93117816A TWI244195B (en) | 2004-06-18 | 2004-06-18 | Electrostatic discharge (ESD) protection MOS device and ESD circuitry thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI244195B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI395315B (en) * | 2010-04-26 | 2013-05-01 | 立錡科技股份有限公司 | Structure that provides ESD protection on the high voltage path of the ultra high voltage component |
| TWI467728B (en) * | 2011-08-24 | 2015-01-01 | Himax Tech Ltd | Electrostatic discharge (esd) protection element and esd circuit thereof |
| TWI775688B (en) * | 2021-11-29 | 2022-08-21 | 世界先進積體電路股份有限公司 | Electrostatic discharge protection structure |
-
2004
- 2004-06-18 TW TW93117816A patent/TWI244195B/en not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI395315B (en) * | 2010-04-26 | 2013-05-01 | 立錡科技股份有限公司 | Structure that provides ESD protection on the high voltage path of the ultra high voltage component |
| TWI467728B (en) * | 2011-08-24 | 2015-01-01 | Himax Tech Ltd | Electrostatic discharge (esd) protection element and esd circuit thereof |
| TWI775688B (en) * | 2021-11-29 | 2022-08-21 | 世界先進積體電路股份有限公司 | Electrostatic discharge protection structure |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI244195B (en) | 2005-11-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |