TW200601454A - Method for fabricating deep trench semiconductor component - Google Patents
Method for fabricating deep trench semiconductor componentInfo
- Publication number
- TW200601454A TW200601454A TW093117644A TW93117644A TW200601454A TW 200601454 A TW200601454 A TW 200601454A TW 093117644 A TW093117644 A TW 093117644A TW 93117644 A TW93117644 A TW 93117644A TW 200601454 A TW200601454 A TW 200601454A
- Authority
- TW
- Taiwan
- Prior art keywords
- dielectric layer
- deep trench
- layer
- substrate
- semiconductor component
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- 229920002120 photoresistant polymer Polymers 0.000 abstract 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
A method for fabricating a deep trench typed semiconductor component is disclosed. The method includes providing a substrate and a mask structure on the substrate. The mask structure has an oxide layer, a pad nitride layer, and a patterned dielectric layer. The substrate is etched by using the patterned dielectric layer as a mask to form a deep trench. A conformal dielectric layer containing arsenic is formed, and the conformal dielectric layer covers the mask structure and the deep trench. A photoresist layer is formed in a portion of the deep trench. A portion of the conformal dielectric layer and the patterned dielectric layer are striped by using the photoresist layer as an etching stop layer. The photoresist layer and a portion of the conformal dielectric layer are striped. A dielectric layer is formed to fill the deep trench. With the thermal process, the arsenic atoms diffuse into the substrate to form a buried plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93117644A TWI235431B (en) | 2004-06-18 | 2004-06-18 | Method for fabricating deep trench semiconductor component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93117644A TWI235431B (en) | 2004-06-18 | 2004-06-18 | Method for fabricating deep trench semiconductor component |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI235431B TWI235431B (en) | 2005-07-01 |
| TW200601454A true TW200601454A (en) | 2006-01-01 |
Family
ID=36637669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW93117644A TWI235431B (en) | 2004-06-18 | 2004-06-18 | Method for fabricating deep trench semiconductor component |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI235431B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7915672B2 (en) * | 2008-11-14 | 2011-03-29 | Semiconductor Components Industries, L.L.C. | Semiconductor device having trench shield electrode structure |
-
2004
- 2004-06-18 TW TW93117644A patent/TWI235431B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI235431B (en) | 2005-07-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |