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TW200600596A - Method for preventing reaction chamber from being polluted by carbon-silicon residue - Google Patents

Method for preventing reaction chamber from being polluted by carbon-silicon residue

Info

Publication number
TW200600596A
TW200600596A TW093119770A TW93119770A TW200600596A TW 200600596 A TW200600596 A TW 200600596A TW 093119770 A TW093119770 A TW 093119770A TW 93119770 A TW93119770 A TW 93119770A TW 200600596 A TW200600596 A TW 200600596A
Authority
TW
Taiwan
Prior art keywords
carbon
reaction chamber
polluted
silicon residue
preventing reaction
Prior art date
Application number
TW093119770A
Other languages
Chinese (zh)
Inventor
Ken Lai
Original Assignee
Walsin Lihwa Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Walsin Lihwa Corp filed Critical Walsin Lihwa Corp
Priority to TW093119770A priority Critical patent/TW200600596A/en
Publication of TW200600596A publication Critical patent/TW200600596A/en

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  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

This invention provides a method for preventing reaction chamber from being polluted by carbon-silicon residue including following procedures: growing oxide layers having better adhesive force on the chamber wall to envelope the carbon-silicon residue when carbon-silicon residue exists inside the reaction chamber, so that the residue will not peel off and pollute the chamber.
TW093119770A 2004-06-30 2004-06-30 Method for preventing reaction chamber from being polluted by carbon-silicon residue TW200600596A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW093119770A TW200600596A (en) 2004-06-30 2004-06-30 Method for preventing reaction chamber from being polluted by carbon-silicon residue

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093119770A TW200600596A (en) 2004-06-30 2004-06-30 Method for preventing reaction chamber from being polluted by carbon-silicon residue

Publications (1)

Publication Number Publication Date
TW200600596A true TW200600596A (en) 2006-01-01

Family

ID=57806821

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093119770A TW200600596A (en) 2004-06-30 2004-06-30 Method for preventing reaction chamber from being polluted by carbon-silicon residue

Country Status (1)

Country Link
TW (1) TW200600596A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI550706B (en) * 2013-06-28 2016-09-21 日立國際電氣股份有限公司 Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI550706B (en) * 2013-06-28 2016-09-21 日立國際電氣股份有限公司 Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

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